頁 33 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 740FESD E6327	Infineon Technologies	TRANS RF NPN 47GHZ 4.7V TSFP4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 47GHz Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz Gain: 9dB ~ 31dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	封裝: 4-SMD, Flat Leads	庫存7,376	4.7V	47GHz	0.5dB ~ 1.45dB @ 150MHz ~ 10GHz	9dB ~ 31dB	160mW	160 @ 25mA, 3V	45mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFP 740F E6327	Infineon Technologies	TRANSISTOR RF NPN 30MA TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz Gain: 27.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	封裝: 4-SMD, Flat Leads	庫存3,488	4.7V	42GHz	0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz	27.5dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
MSC1400M	Microsemi Corporation	TRANS RF BIPO 1000W 28A M216 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 1000W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V Current - Collector (Ic) (Max): 28A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M216 Supplier Device Package: M216	封裝: M216	庫存5,584	65V	1.025GHz ~ 1.15GHz	-	6.5dB	1000W	15 @ 1A, 5V	28A	250°C (TJ)	Chassis Mount	M216	M216
MPSH17_D27Z	Fairchild/ON Semiconductor	TRANS NPN 15V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 6dB @ 200MHz Gain: 24dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存3,456	15V	800MHz	6dB @ 200MHz	24dB	350mW	25 @ 5mA, 10V	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
UPA801T-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存2,544	12V	4.5GHz	1.2dB @ 1GHz	-	200mW	70 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NE685M33-A	CEL	TRANSISTOR NPN 2GHZ M33 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz Gain: - Power - Max: 130mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Leads Supplier Device Package: 3-SuperMiniMold (M33)	封裝: 3-SMD, Flat Leads	庫存6,256	6V	12GHz	1.5dB ~ 2.5dB @ 2GHz	-	130mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	3-SMD, Flat Leads	3-SuperMiniMold (M33)
MPSH11	Fairchild/ON Semiconductor	TRANSISTOR RF NPN TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存3,456	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
SD1726	STMicroelectronics	TRANSISTOR NPN RF HF SSB M174 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 318W DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: M174 Supplier Device Package: M174	封裝: M174	庫存6,288	55V	-	-	14dB	318W	18 @ 1.4A, 6V	20A	200°C (TJ)	Surface Mount	M174	M174
ZTX325STZ	Diodes Incorporated	TRANSISTOR RF NPN E-LINE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 5dB @ 500MHz Gain: 53dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封裝: E-Line-3, Formed Leads	庫存7,520	15V	1.3GHz	5dB @ 500MHz	53dB	350mW	25 @ 2mA, 1V	50mA	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
FMMT5179TC	Diodes Incorporated	TRANSISTOR RF NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Gain: 15dB Power - Max: 330mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存6,240	12V	2GHz	4.5dB @ 200MHz	15dB	330mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SC22950BL	Panasonic Electronic Components	TRANS NPN 20VCEO 30MA MINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1	封裝: TO-236-3, SC-59, SOT-23-3	庫存4,640	20V	250MHz	2.8dB ~ 4dB @ 5MHz	-	200mW	70 @ 1mA, 10V	30mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	Mini3-G1
AT-32011-BLKG	Broadcom Limited	TRANS NPN BIPO 5.5V 32MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz Gain: 12.5dB ~ 14dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存7,936	5.5V	-	1dB ~ 1.3dB @ 900MHz	12.5dB ~ 14dB	200mW	70 @ 2mA, 2.7V	32mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
AT-30533-TR2G	Broadcom Limited	TRANS NPN BIPO 5.5V 8MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 11dB ~ 13dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 8mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封裝: TO-236-3, SC-59, SOT-23-3	庫存5,216	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	11dB ~ 13dB	100mW	70 @ 1mA, 2.7V	8mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE68139R-T1	CEL	TRANS NPN 1GHZ SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	封裝: SOT-143R	庫存3,648	10V	9GHz	1.2dB ~ 2dB @ 1GHz	13.5dB	200mW	50 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
BFU530XAR	NXP	TRANS RF NPN 12V 40MA SOT-143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 0.7dB @ 900MHz Gain: 22dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V Current - Collector (Ic) (Max): 40mA Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	封裝: TO-253-4, TO-253AA	庫存6,192	12V	11GHz	0.7dB @ 900MHz	22dB	450mW	60 @ 10mA, 8V	40mA	-40°C ~ 150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
SS9018FBU	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 30V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存94,626	15V	1.1GHz	-	-	400mW	54 @ 1mA, 5V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFS481H6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 20MA SOT363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 20dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: P-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存239,400	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	20dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	P-SOT363-6
BFG35,115	NXP	TRANS NPN 10V 150MA SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 4GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V Current - Collector (Ic) (Max): 150mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封裝: TO-261-4, TO-261AA	庫存27,630	18V	4GHz	-	-	1W	25 @ 100mA, 10V	150mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
MMBTH81	Fairchild/ON Semiconductor	TRANSISTOR RF PNP SOT-23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: TO-236-3, SC-59, SOT-23-3	庫存360,000	20V	600MHz	-	-	225mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
NTE2401	NTE Electronics, Inc	RF TRANS PNP 30V 450MHZ SOT23 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 450MHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 60Hz ~ 149Hz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封裝: -	Request a Quote	30V	450MHz	3dB ~ 3.5dB @ 60Hz ~ 149Hz	-	300mW	-	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
2SC5507-T2-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 17dB Power - Max: 39mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V Current - Collector (Ic) (Max): 12mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M04	封裝: -	Request a Quote	3.3V	25GHz	1.2dB @ 2GHz	17dB	39mW	50 @ 5mA, 2V	12mA	150°C (TJ)	Surface Mount	SOT-343F	M04
NSVMMBTH81LT3G	onsemi	SOT-23 PNP TRANSISTOR 20V Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: -	庫存27,531	20V	600MHz	-	-	225mW	60 @ 5mA, 10V	50mA	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SC5006-A	CEL	RF TRANS NPN 12V 4.5GHZ SOT523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: -	封裝: -	Request a Quote	12V	4.5GHz	1.2dB @ 1GHz	9dB	125mW	80 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SOT-523	-
MS2396	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5750-A	CEL	RF TRANS NPN 6V 15GHZ SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: -	封裝: -	Request a Quote	6V	15GHz	1.7dB @ 2GHz	15dB	200mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	-
2N3866A-TIN-LEAD	Central Semiconductor Corp	RF TRANS NPN 30V 400MHZ TO39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 5W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封裝: -	Request a Quote	30V	800MHz	-	10dB	5W	25 @ 50mA, 5V	400mA	-65°C ~ 200°C (TJ)	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
C4H10P800AY	Ampleon USA Inc.	C4H10P800A/OMP780-4F-1/TR13,100F Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5004-T1-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): - Gain: 5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Current - Collector (Ic) (Max): 60mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SC-75 (USM)	封裝: -	Request a Quote	12V	5GHz	-	5dB	100mW	60 @ 5mA, 5V	60mA	125°C (TJ)	Surface Mount	SC-75, SOT-416	SC-75 (USM)

BFP 740FESD E6327

Infineon Technologies

TRANS RF NPN 47GHZ 4.7V TSFP4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 47GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
Gain: 9dB ~ 31dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

封裝: 4-SMD, Flat Leads

庫存7,376

4.7V

47GHz

0.5dB ~ 1.45dB @ 150MHz ~ 10GHz

9dB ~ 31dB

160mW

160 @ 25mA, 3V

45mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFP 740F E6327

Infineon Technologies

TRANSISTOR RF NPN 30MA TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz
Gain: 27.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

封裝: 4-SMD, Flat Leads

庫存3,488

4.7V

42GHz

0.5dB ~ 0.75dB @ 1.8GHz ~ 6GHz

27.5dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

MSC1400M

Microsemi Corporation

TRANS RF BIPO 1000W 28A M216

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 1000W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 28A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M216
Supplier Device Package: M216

封裝: M216

庫存5,584

65V

1.025GHz ~ 1.15GHz

-

6.5dB

1000W

15 @ 1A, 5V

28A

250°C (TJ)

Chassis Mount

M216

MPSH17_D27Z

Fairchild/ON Semiconductor

TRANS NPN 15V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 6dB @ 200MHz
Gain: 24dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存3,456

15V

800MHz

6dB @ 200MHz

24dB

350mW

25 @ 5mA, 10V

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

UPA801T-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存2,544

12V

4.5GHz

1.2dB @ 1GHz

-

200mW

70 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NE685M33-A

CEL

TRANSISTOR NPN 2GHZ M33

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
Gain: -
Power - Max: 130mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-SuperMiniMold (M33)

封裝: 3-SMD, Flat Leads

庫存6,256

6V

12GHz

1.5dB ~ 2.5dB @ 2GHz

-

130mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

3-SMD, Flat Leads

3-SuperMiniMold (M33)

MPSH11

Fairchild/ON Semiconductor

TRANSISTOR RF NPN TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存3,456

25V

650MHz

-

350mW

60 @ 4mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

SD1726

STMicroelectronics

TRANSISTOR NPN RF HF SSB M174

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 318W
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: M174
Supplier Device Package: M174

封裝: M174

庫存6,288

55V

-

14dB

318W

18 @ 1.4A, 6V

20A

200°C (TJ)

Surface Mount

M174

ZTX325STZ

Diodes Incorporated

TRANSISTOR RF NPN E-LINE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 5dB @ 500MHz
Gain: 53dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封裝: E-Line-3, Formed Leads

庫存7,520

15V

1.3GHz

5dB @ 500MHz

53dB

350mW

25 @ 2mA, 1V

50mA

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

FMMT5179TC

Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
Gain: 15dB
Power - Max: 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存6,240

12V

2GHz

4.5dB @ 200MHz

15dB

330mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SC22950BL

Panasonic Electronic Components

TRANS NPN 20VCEO 30MA MINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): 2.8dB ~ 4dB @ 5MHz
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1

封裝: TO-236-3, SC-59, SOT-23-3

庫存4,640

20V

250MHz

2.8dB ~ 4dB @ 5MHz

-

200mW

70 @ 1mA, 10V

30mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

Mini3-G1

AT-32011-BLKG

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 900MHz
Gain: 12.5dB ~ 14dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存7,936

5.5V

-

1dB ~ 1.3dB @ 900MHz

12.5dB ~ 14dB

200mW

70 @ 2mA, 2.7V

32mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

AT-30533-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 11dB ~ 13dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 8mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封裝: TO-236-3, SC-59, SOT-23-3

庫存5,216

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

11dB ~ 13dB

100mW

70 @ 1mA, 2.7V

8mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE68139R-T1

CEL

TRANS NPN 1GHZ SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

封裝: SOT-143R

庫存3,648

10V

9GHz

1.2dB ~ 2dB @ 1GHz

13.5dB

200mW

50 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SOT-143R

BFU530XAR

NXP

TRANS RF NPN 12V 40MA SOT-143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Gain: 22dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

封裝: TO-253-4, TO-253AA

庫存6,192

12V

11GHz

0.7dB @ 900MHz

22dB

450mW

60 @ 10mA, 8V

40mA

-40°C ~ 150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

SS9018FBU

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 30V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存94,626

15V

1.1GHz

-

400mW

54 @ 1mA, 5V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFS481H6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 20MA SOT363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 20dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: P-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存239,400

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

20dB

175mW

70 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

P-SOT363-6

BFG35,115

NXP

TRANS NPN 10V 150MA SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 4GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 100mA, 10V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封裝: TO-261-4, TO-261AA

庫存27,630

18V

4GHz

-

1W

25 @ 100mA, 10V

150mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

MMBTH81

Fairchild/ON Semiconductor

TRANSISTOR RF PNP SOT-23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: TO-236-3, SC-59, SOT-23-3

庫存360,000

20V

600MHz

-

225mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

NTE2401

NTE Electronics, Inc

RF TRANS PNP 30V 450MHZ SOT23

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 450MHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 60Hz ~ 149Hz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封裝: -

Request a Quote

30V

450MHz

3dB ~ 3.5dB @ 60Hz ~ 149Hz

-

300mW

-

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

2SC5507-T2-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 17dB
Power - Max: 39mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2V
Current - Collector (Ic) (Max): 12mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M04

封裝: -

Request a Quote

3.3V

25GHz

1.2dB @ 2GHz

17dB

39mW

50 @ 5mA, 2V

12mA

150°C (TJ)

Surface Mount

SOT-343F

M04

NSVMMBTH81LT3G

onsemi

SOT-23 PNP TRANSISTOR 20V

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: -

庫存27,531

20V

600MHz

-

225mW

60 @ 5mA, 10V

50mA

-55°C ~ 150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SC5006-A

CEL

RF TRANS NPN 12V 4.5GHZ SOT523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: -

封裝: -

Request a Quote

12V

4.5GHz

1.2dB @ 1GHz

9dB

125mW

80 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SOT-523

-

MS2396

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

2SC5750-A

CEL

RF TRANS NPN 6V 15GHZ SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: -

封裝: -

Request a Quote

6V

15GHz

1.7dB @ 2GHz

15dB

200mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

-

2N3866A-TIN-LEAD

Central Semiconductor Corp

RF TRANS NPN 30V 400MHZ TO39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封裝: -

Request a Quote

30V

800MHz

-

10dB

5W

25 @ 50mA, 5V

400mA

-65°C ~ 200°C (TJ)

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

C4H10P800AY

Ampleon USA Inc.

C4H10P800A/OMP780-4F-1/TR13,100F

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

2SC5004-T1-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): -
Gain: 5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SC-75 (USM)

封裝: -

Request a Quote

12V

5GHz

-

5dB

100mW

60 @ 5mA, 5V

60mA

125°C (TJ)

Surface Mount

SC-75, SOT-416

SC-75 (USM)