頁 30 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MRF553	Microsemi Corporation	TRANS NPN 16V 500MA POWERMACRO Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 11.5dB Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,224	16V	175MHz	-	11.5dB	3W	30 @ 250mA, 5V	500mA	-	-	-	-
2SC3357-T1-RF-A	CEL	SAME AS NE85634 NPN SILICON MEDI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 10dB Power - Max: 1.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封裝: TO-243AA	庫存3,552	12V	6.5GHz	1.8dB @ 1GHz	10dB	1.2W	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
NE46234-T1-AZ	CEL	RF TRANSISTOR NPN SOT-89 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 2.3dB @ 1GHz Gain: 8.3dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封裝: TO-243AA	庫存5,424	12V	6GHz	2.3dB @ 1GHz	8.3dB	1.8W	50 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
NE85639-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存3,392	12V	9GHz	1.1dB @ 1GHz	13dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
NE85618-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 6.5GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封裝: SC-82A, SOT-343	庫存4,288	12V	6.5GHz	1.1dB @ 1GHz	13dB	150mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
NE681M13-A	CEL	TRANSISTOR NPN 1GHZ M13 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz Gain: - Power - Max: 140mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-3 Supplier Device Package: M13	封裝: SOT-3	庫存6,512	10V	7GHz	1.4dB ~ 2.7dB @ 1GHz	-	140mW	80 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SOT-3	M13
HFA3127R	Intersil	IC TRANS ARRAY 5X NPN 16QFN Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	封裝: 16-VFQFN Exposed Pad	庫存5,536	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-VFQFN Exposed Pad	16-QFN (3x3)
ZTX325STOA	Diodes Incorporated	TRANSISTOR RF NPN E-LINE Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.3GHz Noise Figure (dB Typ @ f): 5dB @ 500MHz Gain: 53dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: E-Line-3, Formed Leads Supplier Device Package: E-Line (TO-92 compatible)	封裝: E-Line-3, Formed Leads	庫存3,296	15V	1.3GHz	5dB @ 500MHz	53dB	350mW	25 @ 2mA, 1V	50mA	-55°C ~ 200°C (TJ)	Through Hole	E-Line-3, Formed Leads	E-Line (TO-92 compatible)
MPS5179	ON Semiconductor	TRANS NPN RF SS 12V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存62,244	12V	2GHz	-	-	200mW	25 @ 3mA, 1V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFG520W/X,115	NXP	TRANS NPN 70MA 15V 9GHZ SOT343N Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343 Reverse Pinning Supplier Device Package: 4-SO	封裝: SOT-343 Reverse Pinning	庫存6,352	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	500mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	SOT-343 Reverse Pinning	4-SO
MDS140L	Microsemi Corporation	TRANS RF BIPO 500W 12A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9.5dB Power - Max: 500W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 12A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封裝: 55AW	庫存4,064	70V	1.03GHz ~ 1.09GHz	-	9.5dB	500W	20 @ 1A, 5V	12A	200°C (TJ)	Chassis Mount	55AW	55AW
UMIL10	Microsemi Corporation	TRANS RF BIPO 28W 1.5A 55FT2 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 100MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 28W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	封裝: 55FT	庫存4,432	30V	100MHz ~ 400MHz	-	10dB	28W	10 @ 200mA, 5V	1.5A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
1000MP	Microsemi Corporation	TRANS RF BIPO 5.3W 300MA 55FW Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: 1.15GHz Noise Figure (dB Typ @ f): - Gain: 10.8dB Power - Max: 5.3W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V Current - Collector (Ic) (Max): 300mA Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 55FW Supplier Device Package: 55FW	封裝: 55FW	庫存5,392	-	1.15GHz	-	10.8dB	5.3W	15 @ 100mA, 5V	300mA	-	Chassis Mount	55FW	55FW
BFS25A,115	NXP	TRANS NPN 5V 6.5MA SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz Gain: - Power - Max: 32mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Current - Collector (Ic) (Max): 6.5mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封裝: SC-70, SOT-323	庫存2,352	5V	5GHz	1.8dB ~ 2dB @ 1GHz	-	32mW	50 @ 500µA, 1V	6.5mA	175°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
AT-30511-TR1G	Broadcom Limited	TRANS NPN BIPO 5.5V 8MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 14dB ~ 16dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 8mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存843,360	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	14dB ~ 16dB	100mW	70 @ 1mA, 2.7V	8mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
AT-30533-TR1G	Broadcom Limited	TRANS NPN BIPO 5.5V 8MA SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 11dB ~ 13dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 8mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封裝: TO-236-3, SC-59, SOT-23-3	庫存1,180,200	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	11dB ~ 13dB	100mW	70 @ 1mA, 2.7V	8mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
55GN01MA-TL-E	ON Semiconductor	TRANS NPN BIPO 70MA 10V MCP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 4.5GHz ~ 5.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Gain: 10dB @ 1GHz Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCP	封裝: SC-70, SOT-323	庫存3,696	10V	4.5GHz ~ 5.5GHz	1.9dB @ 1GHz	10dB @ 1GHz	400mW	100 @ 10mA, 5V	70mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-MCP
BFP720ESDH6327XTSA1	Infineon Technologies	TRANS RF NPN 43GHZ 4.7V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 43GHz Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz Gain: 11dB ~ 30.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封裝: SC-82A, SOT-343	庫存4,464	4.7V	43GHz	0.55dB ~ 1.55dB @ 150MHz ~ 10GHz	11dB ~ 30.5dB	100mW	160 @ 15mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
BFP640FH6327XTSA1	Infineon Technologies	TRANS RF NPN 4.5V 50MA 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Gain: 23dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	封裝: 4-SMD, Flat Leads	庫存3,072	4.5V	40GHz	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz	23dB	200mW	110 @ 30mA, 3V	50mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
HFA3127RZ	Intersil	IC TRANS ARRAY 5X NPN 16-QFN Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	封裝: 16-VFQFN Exposed Pad	庫存12,264	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-VFQFN Exposed Pad	16-QFN (3x3)
SS9018HBU	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 30V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 400mW DC Current Gain (hFE) (Min) @ Ic, Vce: 97 @ 1mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存16,800	15V	1.1GHz	-	-	400mW	97 @ 1mA, 5V	50mA	150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
PH1214-6M	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,6W,1.20-1.40_ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 30W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 1.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: 2L-FLG	封裝: -	Request a Quote	65V	1.4GHz	-	7dB	30W	-	1.5A	200°C (TJ)	Chassis Mount	2L-FLG	2L-FLG
2SC5454-A	CEL	RF TRANS NPN 6V 14.5GHZ SOT143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 14.5GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: -	封裝: -	Request a Quote	6V	14.5GHz	1.5dB @ 2GHz	12dB	200mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	-
BLS3135-65I	Ampleon USA Inc.	MICROWAVE POWER TRANSISTOR (AMPL Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 75V Frequency - Transition: 3.5GHz Noise Figure (dB Typ @ f): - Gain: 7dB Power - Max: 200W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-422A Supplier Device Package: SOT422A	封裝: -	Request a Quote	75V	3.5GHz	-	7dB	200W	40 @ 2A, 5V	8A	200°C (TJ)	Chassis Mount	SOT-422A	SOT422A
2SC3775-4-TB-E	Sanyo	NPN EPITAXIAL PLANAR SILICON Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.5dB @ 900MHz Gain: 14dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	封裝: -	Request a Quote	12V	5GHz	1.5dB @ 900MHz	14dB	250mW	100 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
2SA1778-3-TB-E	onsemi	PNP TRANSISTOR Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 2.5dB @ 400MHz Gain: 13dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	封裝: -	Request a Quote	15V	1.2GHz	2.5dB @ 400MHz	13dB	250mW	60 @ 5mA, 10V	50mA	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
UPA901TU-T3-A	Renesas Electronics Corporation	RF SMALL SIGNAL TRANSISTOR Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 4.5V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 410mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 6mA, 3V / 80 @ 20mA, 3V Current - Collector (Ic) (Max): 75mA, 250mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: 8-MINIMOLD	封裝: -	Request a Quote	4.5V	-	-	-	410mW	80 @ 6mA, 3V / 80 @ 20mA, 3V	75mA, 250mA	-	Surface Mount	8-SMD, Flat Lead Exposed Pad	8-MINIMOLD
BFS-17P-E8211	Infineon Technologies	RF TRANS NPN SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	封裝: -	Request a Quote	15V	1.4GHz	3.5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23

MRF553

Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 11.5dB
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,224

16V

175MHz

-

11.5dB

3W

30 @ 250mA, 5V

500mA

-

2SC3357-T1-RF-A

CEL

SAME AS NE85634 NPN SILICON MEDI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 10dB
Power - Max: 1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封裝: TO-243AA

庫存3,552

12V

6.5GHz

1.8dB @ 1GHz

10dB

1.2W

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

NE46234-T1-AZ

CEL

RF TRANSISTOR NPN SOT-89

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 2.3dB @ 1GHz
Gain: 8.3dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封裝: TO-243AA

庫存5,424

12V

6GHz

2.3dB @ 1GHz

8.3dB

1.8W

50 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

NE85639-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存3,392

12V

9GHz

1.1dB @ 1GHz

13dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

NE85618-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 6.5GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封裝: SC-82A, SOT-343

庫存4,288

12V

6.5GHz

1.1dB @ 1GHz

13dB

150mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

NE681M13-A

CEL

TRANSISTOR NPN 1GHZ M13

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2.7dB @ 1GHz
Gain: -
Power - Max: 140mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-3
Supplier Device Package: M13

封裝: SOT-3

庫存6,512

10V

7GHz

1.4dB ~ 2.7dB @ 1GHz

-

140mW

80 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SOT-3

M13

HFA3127R

Intersil

IC TRANS ARRAY 5X NPN 16QFN

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

封裝: 16-VFQFN Exposed Pad

庫存5,536

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-VFQFN Exposed Pad

16-QFN (3x3)

ZTX325STOA

Diodes Incorporated

TRANSISTOR RF NPN E-LINE

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.3GHz
Noise Figure (dB Typ @ f): 5dB @ 500MHz
Gain: 53dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)

封裝: E-Line-3, Formed Leads

庫存3,296

15V

1.3GHz

5dB @ 500MHz

53dB

350mW

25 @ 2mA, 1V

50mA

-55°C ~ 200°C (TJ)

Through Hole

E-Line-3, Formed Leads

E-Line (TO-92 compatible)

MPS5179

ON Semiconductor

TRANS NPN RF SS 12V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存62,244

12V

2GHz

-

200mW

25 @ 3mA, 1V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFG520W/X,115

NXP

TRANS NPN 70MA 15V 9GHZ SOT343N

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Supplier Device Package: 4-SO

封裝: SOT-343 Reverse Pinning

庫存6,352

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

500mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

SOT-343 Reverse Pinning

4-SO

MDS140L

Microsemi Corporation

TRANS RF BIPO 500W 12A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9.5dB
Power - Max: 500W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 12A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封裝: 55AW

庫存4,064

70V

1.03GHz ~ 1.09GHz

-

9.5dB

500W

20 @ 1A, 5V

12A

200°C (TJ)

Chassis Mount

55AW

UMIL10

Microsemi Corporation

TRANS RF BIPO 28W 1.5A 55FT2

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 100MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 28W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

封裝: 55FT

庫存4,432

30V

100MHz ~ 400MHz

-

10dB

28W

10 @ 200mA, 5V

1.5A

200°C (TJ)

Chassis, Stud Mount

55FT

1000MP

Microsemi Corporation

TRANS RF BIPO 5.3W 300MA 55FW

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 10.8dB
Power - Max: 5.3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 55FW
Supplier Device Package: 55FW

封裝: 55FW

庫存5,392

-

1.15GHz

-

10.8dB

5.3W

15 @ 100mA, 5V

300mA

-

Chassis Mount

55FW

BFS25A,115

NXP

TRANS NPN 5V 6.5MA SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz
Gain: -
Power - Max: 32mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Current - Collector (Ic) (Max): 6.5mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

庫存2,352

5V

5GHz

1.8dB ~ 2dB @ 1GHz

-

32mW

50 @ 500µA, 1V

6.5mA

175°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

AT-30511-TR1G

Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 14dB ~ 16dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 8mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存843,360

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

14dB ~ 16dB

100mW

70 @ 1mA, 2.7V

8mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

AT-30533-TR1G

Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 11dB ~ 13dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 8mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封裝: TO-236-3, SC-59, SOT-23-3

庫存1,180,200

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

11dB ~ 13dB

100mW

70 @ 1mA, 2.7V

8mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

55GN01MA-TL-E

ON Semiconductor

TRANS NPN BIPO 70MA 10V MCP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 4.5GHz ~ 5.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Gain: 10dB @ 1GHz
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCP

封裝: SC-70, SOT-323

庫存3,696

10V

4.5GHz ~ 5.5GHz

1.9dB @ 1GHz

10dB @ 1GHz

400mW

100 @ 10mA, 5V

70mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-MCP

BFP720ESDH6327XTSA1

Infineon Technologies

TRANS RF NPN 43GHZ 4.7V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 43GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
Gain: 11dB ~ 30.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封裝: SC-82A, SOT-343

庫存4,464

4.7V

43GHz

0.55dB ~ 1.55dB @ 150MHz ~ 10GHz

11dB ~ 30.5dB

100mW

160 @ 15mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

BFP640FH6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 50MA 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: 40GHz
Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain: 23dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

封裝: 4-SMD, Flat Leads

庫存3,072

4.5V

40GHz

0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz

23dB

200mW

110 @ 30mA, 3V

50mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

HFA3127RZ

Intersil

IC TRANS ARRAY 5X NPN 16-QFN

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

封裝: 16-VFQFN Exposed Pad

庫存12,264

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-VFQFN Exposed Pad

16-QFN (3x3)

SS9018HBU

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 30V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 97 @ 1mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存16,800

15V

1.1GHz

-

400mW

97 @ 1mA, 5V

50mA

150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

PH1214-6M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,6W,1.20-1.40_

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 30W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 1.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: 2L-FLG

封裝: -

Request a Quote

65V

1.4GHz

-

7dB

30W

-

1.5A

200°C (TJ)

Chassis Mount

2L-FLG

2SC5454-A

CEL

RF TRANS NPN 6V 14.5GHZ SOT143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 14.5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: -

封裝: -

Request a Quote

6V

14.5GHz

1.5dB @ 2GHz

12dB

200mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

-

BLS3135-65I

Ampleon USA Inc.

MICROWAVE POWER TRANSISTOR (AMPL

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 75V
Frequency - Transition: 3.5GHz
Noise Figure (dB Typ @ f): -
Gain: 7dB
Power - Max: 200W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
Current - Collector (Ic) (Max): 8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-422A
Supplier Device Package: SOT422A

封裝: -

Request a Quote

75V

3.5GHz

-

7dB

200W

40 @ 2A, 5V

8A

200°C (TJ)

Chassis Mount

SOT-422A

SOT422A

2SC3775-4-TB-E

Sanyo

NPN EPITAXIAL PLANAR SILICON

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.5dB @ 900MHz
Gain: 14dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

封裝: -

Request a Quote

12V

5GHz

1.5dB @ 900MHz

14dB

250mW

100 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

2SA1778-3-TB-E

onsemi

PNP TRANSISTOR

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 2.5dB @ 400MHz
Gain: 13dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

封裝: -

Request a Quote

15V

1.2GHz

2.5dB @ 400MHz

13dB

250mW

60 @ 5mA, 10V

50mA

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

UPA901TU-T3-A

Renesas Electronics Corporation

RF SMALL SIGNAL TRANSISTOR

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 410mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 6mA, 3V / 80 @ 20mA, 3V
Current - Collector (Ic) (Max): 75mA, 250mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: 8-MINIMOLD

封裝: -

Request a Quote

4.5V

-

410mW

80 @ 6mA, 3V / 80 @ 20mA, 3V

75mA, 250mA

-

Surface Mount

8-SMD, Flat Lead Exposed Pad

8-MINIMOLD

BFS-17P-E8211

Infineon Technologies

RF TRANS NPN SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

封裝: -

Request a Quote

15V

1.4GHz

3.5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23