頁 31 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFR 360F E6327	Infineon Technologies	TRANSISTOR RF NPN 6V TSFP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 9V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Gain: 15.5dB Power - Max: 210mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: PG-TSFP-3	封裝: SOT-723	庫存5,680	9V	14GHz	1dB @ 1.8GHz	15.5dB	210mW	90 @ 15mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-723	PG-TSFP-3
BFP405E6740HTSA1	Infineon Technologies	TRANSISTOR NPN RF 4.5V SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz Gain: 23dB Power - Max: 75mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封裝: SC-82A, SOT-343	庫存7,008	5V	25GHz	1.25dB @ 1.8GHz	23dB	75mW	60 @ 5mA, 4V	25mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFS 469L6 E6327	Infineon Technologies	TRANSISTOR RF TWIN NPN TSLP-6 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5V, 10V Frequency - Transition: 22GHz, 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz Gain: 14.5dB Power - Max: 200mW, 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V Current - Collector (Ic) (Max): 50mA, 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Supplier Device Package: PG-TSLP-6	封裝: 6-XFDFN	庫存5,632	5V, 10V	22GHz, 9GHz	1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz	14.5dB	200mW, 250mW	130 @ 20mA, 3V / 100 @ 5mA, 3V	50mA, 70mA	150°C (TJ)	Surface Mount	6-XFDFN	PG-TSLP-6
2SC4094-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存250,800	10V	9GHz	1.2dB @ 1GHz	13.5dB	200mW	50 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
2SC3356-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,177,348	12V	7GHz	1.1dB @ 1GHz	13dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
NE202930-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.15dB @ 1GHz Gain: 13.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-SuperMiniMold (30 PKG)	封裝: SC-70, SOT-323	庫存2,000	6V	11GHz	1.15dB @ 1GHz	13.5dB	150mW	85 @ 5mA, 5V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	3-SuperMiniMold (30 PKG)
MS2212	Microsemi Corporation	TRANS RF BIPO 50W 1.8A M222 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.1dB ~ 8.9dB Power - Max: 50W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V Current - Collector (Ic) (Max): 1.8A Operating Temperature: 250°C (TJ) Mounting Type: Chassis Mount Package / Case: M222 Supplier Device Package: M222	封裝: M222	庫存4,640	55V	960MHz ~ 1.215GHz	-	8.1dB ~ 8.9dB	50W	15 @ 500mA, 5V	1.8A	250°C (TJ)	Chassis Mount	M222	M222
FH105A-TR-E	ON Semiconductor	TRANS NPN 30MA 10V MCP6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz Gain: 10dB @ 1.5GHz Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-MCP	封裝: 6-TSSOP, SC-88, SOT-363	庫存4,576	10V	8GHz	1.4dB @ 1.5GHz	10dB @ 1.5GHz	150mW	0.95 @ 10mA, 5V	30mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-MCP
BF959G	ON Semiconductor	TRANS RF NPN 20V 100MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: - Power - Max: 625mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存4,608	20V	700MHz	3dB @ 200MHz	-	625mW	40 @ 20mA, 10V	100mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
MX0912B251Y,114	Ampleon USA Inc.	TRANSISTOR POWER NPN SOT439A Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.215GHz Noise Figure (dB Typ @ f): - Gain: 7.4dB Power - Max: 690W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 15A Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-439A Supplier Device Package: CDFM2	封裝: SOT-439A	庫存5,488	20V	1.215GHz	-	7.4dB	690W	-	15A	200°C (TJ)	Surface Mount	SOT-439A	CDFM2
NE68139-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存3,904	10V	9GHz	1.2dB @ 1GHz	13.5dB	200mW	50 @ 20mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
BFG520/X,235	NXP	TRANS RF NPN 9GHZ 15V SOT143B Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Current - Collector (Ic) (Max): 70mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143B	封裝: TO-253-4, TO-253AA	庫存5,328	15V	9GHz	1.1dB ~ 2.1dB @ 900MHz	-	300mW	60 @ 20mA, 6V	70mA	175°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143B
MDS800	Microsemi Corporation	TRANS RF BIPO 1458W 60A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.09GHz Noise Figure (dB Typ @ f): - Gain: 8.6dB Power - Max: 1458W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 60A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST-1 Supplier Device Package: 55ST-1	封裝: 55ST-1	庫存4,240	65V	1.09GHz	-	8.6dB	1458W	20 @ 1A, 5V	60A	200°C (TJ)	Chassis Mount	55ST-1	55ST-1
UMIL3	Microsemi Corporation	TRANS RF BIPO 11W 700MA 55FT3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 225MHz ~ 400MHz Noise Figure (dB Typ @ f): - Gain: 11.8db ~ 13dB Power - Max: 11W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V Current - Collector (Ic) (Max): 700mA Operating Temperature: 150°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	封裝: 55FT	庫存4,976	30V	225MHz ~ 400MHz	-	11.8db ~ 13dB	11W	10 @ 100A, 5V	700mA	150°C (TJ)	Chassis, Stud Mount	55FT	55FT
BFU630F,115	NXP	TRANSISTOR NPN SOT343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 21GHz Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz Gain: 13dB ~ 22.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: 4-DFP	封裝: SOT-343F	庫存3,856	5.5V	21GHz	0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz	13dB ~ 22.5dB	200mW	90 @ 5mA, 2V	30mA	150°C (TJ)	Surface Mount	SOT-343F	4-DFP
PH2731-75L	M/A-Com Technology Solutions	TRANSISTOR BIPOLAR 2.7-3.1GHZ Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.16dB ~ 8.86dB Power - Max: 75W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 7A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	封裝: -	庫存4,928	65V	-	-	8.16dB ~ 8.86dB	75W	-	7A	200°C (TJ)	Chassis Mount	-	-
2SC4562GRL	Panasonic Electronic Components	TRANS NPN 50VCEO 50MA SMINI-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 50V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F2	封裝: SC-85	庫存216,000	50V	250MHz	-	-	150mW	250 @ 2mA, 10V	50mA	150°C (TJ)	Surface Mount	SC-85	SMini3-F2
BFP420FH6327XTSA1	Infineon Technologies	TRANS RF NPN 5.5V 35MA 4TSFP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 19.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	封裝: 4-SMD, Flat Leads	庫存27,150	5.5V	25GHz	1.1dB @ 1.8GHz	19.5dB	160mW	60 @ 5mA, 4V	35mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
MRF455MP	MACOM Technology Solutions	TRANSISTOR,<30MHZ,12.5V,60W,MATC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 13dB Power - Max: 175W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 15A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-07, Style 1 Supplier Device Package: 211-07, Style 1	封裝: -	Request a Quote	18V	30MHz	-	13dB	175W	10 @ 5A, 5V	15A	-	Chassis Mount	211-07, Style 1	211-07, Style 1
PH2226-50M	MACOM Technology Solutions	TRANSISTOR,BIPOLAR,50W,36V,2.20- Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 63V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8dB Power - Max: 159W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): 6A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 2L-FLG Supplier Device Package: -	封裝: -	Request a Quote	63V	-	-	8dB	159W	-	6A	200°C (TJ)	Chassis Mount	2L-FLG	-
2SC5617-T3-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 8.5dB Power - Max: 140mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, Flat Lead Supplier Device Package: 3-MINIMOLD	封裝: -	Request a Quote	6V	12GHz	1.5dB @ 2GHz	8.5dB	140mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	3-SMD, Flat Lead	3-MINIMOLD
MS2266	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
44022H	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
2SC5773JR-TL-E	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 10.8GHz Noise Figure (dB Typ @ f): 1.1dB @ 900MHz Gain: 11.9dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-MPAK	封裝: -	Request a Quote	6V	10.8GHz	1.1dB @ 900MHz	11.9dB	700mW	80 @ 50mA, 5V	80mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-MPAK
SD1019	Microsemi Corporation	RF TRANS NPN 35V 136MHZ M130 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 136MHz Noise Figure (dB Typ @ f): - Gain: 4.5dB Power - Max: 117W DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 500mA, 5V Current - Collector (Ic) (Max): 9A Operating Temperature: 200°C Mounting Type: Stud Mount Package / Case: M130 Supplier Device Package: M130	封裝: -	Request a Quote	35V	136MHz	-	4.5dB	117W	5 @ 500mA, 5V	9A	200°C	Stud Mount	M130	M130
CPH6074-TL-E	onsemi	TRANSISTOR Transistor Type: 2 PNP (Dual) Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	封裝: -	Request a Quote	15V	1.2GHz	-	-	500mW	60 @ 5mA, 10V	50mA	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH
5962-9474901MEA	Harris Corporation	NPN TRANSISTOR ARRAY Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
42106HS	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFR 360F E6327

Infineon Technologies

TRANSISTOR RF NPN 6V TSFP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 9V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Gain: 15.5dB
Power - Max: 210mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: PG-TSFP-3

封裝: SOT-723

庫存5,680

9V

14GHz

1dB @ 1.8GHz

15.5dB

210mW

90 @ 15mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-723

PG-TSFP-3

BFP405E6740HTSA1

Infineon Technologies

TRANSISTOR NPN RF 4.5V SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Gain: 23dB
Power - Max: 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

庫存7,008

5V

25GHz

1.25dB @ 1.8GHz

23dB

75mW

60 @ 5mA, 4V

25mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFS 469L6 E6327

Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5V, 10V
Frequency - Transition: 22GHz, 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
Gain: 14.5dB
Power - Max: 200mW, 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 20mA, 3V / 100 @ 5mA, 3V
Current - Collector (Ic) (Max): 50mA, 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Supplier Device Package: PG-TSLP-6

封裝: 6-XFDFN

庫存5,632

5V, 10V

22GHz, 9GHz

1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz

14.5dB

200mW, 250mW

130 @ 20mA, 3V / 100 @ 5mA, 3V

50mA, 70mA

150°C (TJ)

Surface Mount

6-XFDFN

PG-TSLP-6

2SC4094-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存250,800

10V

9GHz

1.2dB @ 1GHz

13.5dB

200mW

50 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

2SC3356-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,177,348

12V

7GHz

1.1dB @ 1GHz

13dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

NE202930-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1GHz
Gain: 13.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 5mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-SuperMiniMold (30 PKG)

封裝: SC-70, SOT-323

庫存2,000

6V

11GHz

1.15dB @ 1GHz

13.5dB

150mW

85 @ 5mA, 5V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

3-SuperMiniMold (30 PKG)

MS2212

Microsemi Corporation

TRANS RF BIPO 50W 1.8A M222

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.1dB ~ 8.9dB
Power - Max: 50W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
Current - Collector (Ic) (Max): 1.8A
Operating Temperature: 250°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M222
Supplier Device Package: M222

封裝: M222

庫存4,640

55V

960MHz ~ 1.215GHz

-

8.1dB ~ 8.9dB

50W

15 @ 500mA, 5V

1.8A

250°C (TJ)

Chassis Mount

M222

FH105A-TR-E

ON Semiconductor

TRANS NPN 30MA 10V MCP6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.5GHz
Gain: 10dB @ 1.5GHz
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 0.95 @ 10mA, 5V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-MCP

封裝: 6-TSSOP, SC-88, SOT-363

庫存4,576

10V

8GHz

1.4dB @ 1.5GHz

10dB @ 1.5GHz

150mW

0.95 @ 10mA, 5V

30mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-MCP

BF959G

ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: -
Power - Max: 625mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存4,608

20V

700MHz

3dB @ 200MHz

-

625mW

40 @ 20mA, 10V

100mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

MX0912B251Y,114

Ampleon USA Inc.

TRANSISTOR POWER NPN SOT439A

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 7.4dB
Power - Max: 690W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 15A
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-439A
Supplier Device Package: CDFM2

封裝: SOT-439A

庫存5,488

20V

1.215GHz

-

7.4dB

690W

-

15A

200°C (TJ)

Surface Mount

SOT-439A

CDFM2

NE68139-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存3,904

10V

9GHz

1.2dB @ 1GHz

13.5dB

200mW

50 @ 20mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

BFG520/X,235

NXP

TRANS RF NPN 9GHZ 15V SOT143B

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143B

封裝: TO-253-4, TO-253AA

庫存5,328

15V

9GHz

1.1dB ~ 2.1dB @ 900MHz

-

300mW

60 @ 20mA, 6V

70mA

175°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143B

MDS800

Microsemi Corporation

TRANS RF BIPO 1458W 60A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 8.6dB
Power - Max: 1458W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 60A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST-1
Supplier Device Package: 55ST-1

封裝: 55ST-1

庫存4,240

65V

1.09GHz

-

8.6dB

1458W

20 @ 1A, 5V

60A

200°C (TJ)

Chassis Mount

55ST-1

UMIL3

Microsemi Corporation

TRANS RF BIPO 11W 700MA 55FT3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 225MHz ~ 400MHz
Noise Figure (dB Typ @ f): -
Gain: 11.8db ~ 13dB
Power - Max: 11W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
Current - Collector (Ic) (Max): 700mA
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

封裝: 55FT

庫存4,976

30V

225MHz ~ 400MHz

-

11.8db ~ 13dB

11W

10 @ 100A, 5V

700mA

150°C (TJ)

Chassis, Stud Mount

55FT

BFU630F,115

NXP

TRANSISTOR NPN SOT343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 21GHz
Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
Gain: 13dB ~ 22.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: 4-DFP

封裝: SOT-343F

庫存3,856

5.5V

21GHz

0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz

13dB ~ 22.5dB

200mW

90 @ 5mA, 2V

30mA

150°C (TJ)

Surface Mount

SOT-343F

4-DFP

PH2731-75L

M/A-Com Technology Solutions

TRANSISTOR BIPOLAR 2.7-3.1GHZ

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.16dB ~ 8.86dB
Power - Max: 75W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 7A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,928

65V

-

8.16dB ~ 8.86dB

75W

-

7A

200°C (TJ)

Chassis Mount

-

2SC4562GRL

Panasonic Electronic Components

TRANS NPN 50VCEO 50MA SMINI-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2

封裝: SC-85

庫存216,000

50V

250MHz

-

150mW

250 @ 2mA, 10V

50mA

150°C (TJ)

Surface Mount

SC-85

SMini3-F2

BFP420FH6327XTSA1

Infineon Technologies

TRANS RF NPN 5.5V 35MA 4TSFP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 19.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

封裝: 4-SMD, Flat Leads

庫存27,150

5.5V

25GHz

1.1dB @ 1.8GHz

19.5dB

160mW

60 @ 5mA, 4V

35mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

MRF455MP

MACOM Technology Solutions

TRANSISTOR,<30MHZ,12.5V,60W,MATC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 13dB
Power - Max: 175W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 15A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-07, Style 1
Supplier Device Package: 211-07, Style 1

封裝: -

Request a Quote

18V

30MHz

-

13dB

175W

10 @ 5A, 5V

15A

-

Chassis Mount

211-07, Style 1

PH2226-50M

MACOM Technology Solutions

TRANSISTOR,BIPOLAR,50W,36V,2.20-

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 63V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8dB
Power - Max: 159W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): 6A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 2L-FLG
Supplier Device Package: -

封裝: -

Request a Quote

63V

-

8dB

159W

-

6A

200°C (TJ)

Chassis Mount

2L-FLG

-

2SC5617-T3-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 8.5dB
Power - Max: 140mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Lead
Supplier Device Package: 3-MINIMOLD

封裝: -

Request a Quote

6V

12GHz

1.5dB @ 2GHz

8.5dB

140mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

3-SMD, Flat Lead

3-MINIMOLD

MS2266

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

44022H

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

2SC5773JR-TL-E

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 10.8GHz
Noise Figure (dB Typ @ f): 1.1dB @ 900MHz
Gain: 11.9dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 50mA, 5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-MPAK

封裝: -

Request a Quote

6V

10.8GHz

1.1dB @ 900MHz

11.9dB

700mW

80 @ 50mA, 5V

80mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-MPAK

SD1019

Microsemi Corporation

RF TRANS NPN 35V 136MHZ M130

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 136MHz
Noise Figure (dB Typ @ f): -
Gain: 4.5dB
Power - Max: 117W
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 500mA, 5V
Current - Collector (Ic) (Max): 9A
Operating Temperature: 200°C
Mounting Type: Stud Mount
Package / Case: M130
Supplier Device Package: M130

封裝: -

Request a Quote

35V

136MHz

-

4.5dB

117W

5 @ 500mA, 5V

9A

200°C

Stud Mount

M130

CPH6074-TL-E

onsemi

TRANSISTOR

Transistor Type: 2 PNP (Dual)
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

封裝: -

Request a Quote

15V

1.2GHz

-

500mW

60 @ 5mA, 10V

50mA

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH

5962-9474901MEA

Harris Corporation

NPN TRANSISTOR ARRAY

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

42106HS

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-