頁 36 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - RF

記錄 1,633
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圖片
零件編號
製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR183WH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V 65MA SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
  • Gain: 18.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存4,336
12V
8GHz
0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
18.5dB
450mW
70 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
FH102A-TR-E
ON Semiconductor

TRANS NPN DUAL 10V 70MA MCP6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-MCP
封裝: 6-TSSOP, SC-88, SOT-363
庫存6,224
10V
7GHz
1dB @ 1GHz
12dB
500mW
90 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-MCP
hot MSC2295-CT1
ON Semiconductor

TRANS NPN RF BIPO 20V SC-59

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 150MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
封裝: TO-236-3, SC-59, SOT-23-3
庫存394,800
20V
150MHz
-
-
200mW
110 @ 1mA, 10V
30mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
UPA812T-T1-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存5,552
10V
7GHz
1.4dB @ 1GHz
12dB
200mW
70 @ 7mA, 3V
65mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot KSC3123RMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 50MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz
  • Gain: 20dB ~ 23dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封裝: TO-236-3, SC-59, SOT-23-3
庫存36,000
20V
1.4GHz
3.8dB ~ 5.5dB @ 200MHz
20dB ~ 23dB
150mW
60 @ 5mA, 10V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
AT-41486-BLK
Broadcom Limited

TRANS SIL LOW NOISE BIPOLAR 86PL

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
  • Gain: 9dB ~ 18dB
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-86
  • Supplier Device Package: 86 Plastic
封裝: SOT-86
庫存6,112
12V
8GHz
1.4dB ~ 3dB @ 1GHz ~ 4GHz
9dB ~ 18dB
500mW
30 @ 10mA, 8V
60mA
150°C (TJ)
Surface Mount
SOT-86
86 Plastic
UPA810T-T1-A
CEL

RF DUAL TRANSISTORS NPN SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封裝: 6-TSSOP, SC-88, SOT-363
庫存3,952
12V
4.5GHz
1.2dB @ 1GHz
9dB
200mW
70 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
hot NE94433-T1B
CEL

TRANS NPN OSC FT=2GHZ SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封裝: TO-236-3, SC-59, SOT-23-3
庫存36,000
15V
2GHz
-
-
150mW
50 @ 5mA, 10V
50mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE85619-T1
CEL

TRANS NPN 1GHZ SMD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
  • Gain: 6.5dB ~ 12.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-523
  • Supplier Device Package: SOT-523
封裝: SOT-523
庫存2,736
12V
4.5GHz
1.4dB ~ 2.2dB @ 1GHz ~ 2GHz
6.5dB ~ 12.5dB
100mW
80 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
SOT-523
SOT-523
BFR93A,215
NXP

TRANS NPN 35MA 12V 6GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存5,104
12V
6GHz
1.9dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
40 @ 30mA, 5V
35mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFR520T,115
NXP

TRANS NPN 15V 9GHZ SOT-416

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75
封裝: SC-75, SOT-416
庫存4,320
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
150mW
60 @ 20mA, 6V
70mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75
BFG505/X,235
NXP

TRANS RF NPN 9GHZ SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 18mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存7,936
15V
9GHz
1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
-
150mW
60 @ 5mA, 6V
18mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BGR420H6327XTSA1
Infineon Technologies

TRANS RF NPN 13V 25MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 13V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
  • Gain: -
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封裝: SC-82A, SOT-343
庫存5,840
13V
-
1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
-
120mW
-
25mA
-65°C ~ 150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP182WH6327XTSA1
Infineon Technologies

TRANS RF NPN 12V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封裝: SC-82A, SOT-343
庫存6,160
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
22dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFR380L3E6327XTMA1
Infineon Technologies

TRANSISTOR RF NPN 6V TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 2.1dB @ 1.8GHz
  • Gain: 7.5dB ~ 16.5dB
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: SC-101, SOT-883
庫存4,080
9V
14GHz
0.5dB ~ 2.1dB @ 1.8GHz
7.5dB ~ 16.5dB
380mW
90 @ 40mA, 3V
80mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
TAN350
Microsemi Corporation

TRANS RF BIPO 1450W 40A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 7.5dB
  • Power - Max: 1450W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 230°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
封裝: 55ST
庫存7,328
65V
960MHz ~ 1.215GHz
-
7dB ~ 7.5dB
1450W
10 @ 1A, 5V
40A
230°C (TJ)
Chassis Mount
55ST
55ST
TAN250A
Microsemi Corporation

TRANS RF BIPO 60V 30A 55AW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.2db ~ 7dB
  • Power - Max: 575W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 30A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
封裝: 55AW
庫存4,208
60V
960MHz ~ 1.215GHz
-
6.2db ~ 7dB
575W
10 @ 1A, 5V
30A
200°C (TJ)
Chassis Mount
55AW
55AW
MPA201
Microsemi Corporation

TRANS RF BIPO 6W 300MA 55AU2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 22V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB
  • Power - Max: 6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AU
  • Supplier Device Package: 55AU
封裝: 55AU
庫存6,480
22V
2GHz
-
13dB
6W
20 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
55AU
55AU
MCH4014-TL-H
ON Semiconductor

TRANS NPN 12V 30MA MCPH4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 18dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
封裝: 4-SMD, Flat Leads
庫存3,248
12V
10GHz
1.2dB @ 1GHz
18dB
350mW
60 @ 5mA, 5V
30mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-MCPH
2SC5086-O,LF
Toshiba Semiconductor and Storage

TRANS RF NPN 12V 1MHZ SSM

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 500MHz
  • Gain: -
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封裝: SC-75, SOT-416
庫存2,736
12V
7GHz
1dB @ 500MHz
-
100mW
80 @ 20mA, 10V
80mA
125°C (TJ)
Surface Mount
SC-75, SOT-416
SSM
BFS17PE6327HTSA1
Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存211,728
15V
1.4GHz
3.5dB ~ 5dB @ 800MHz
-
280mW
40 @ 2mA, 1V
25mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
hot MMBT5179
Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封裝: TO-236-3, SC-59, SOT-23-3
庫存8,652
12V
2GHz
5dB @ 200MHz
15dB
225mW
25 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BFR740L3RHE6327XTSA1
Infineon Technologies

RF TRANS NPN 4.7V 42GHZ TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 42GHz
  • Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
  • Gain: 24.5dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: PG-TSLP-3
封裝: -
庫存4,377
4.7V
42GHz
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
24.5dB
160mW
160 @ 25mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
PG-TSLP-3
2SC4226-A
CEL

RF TRANS NPN 12V 4.5GHZ SC70-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SC-70-3
封裝: -
Request a Quote
12V
4.5GHz
1.2dB @ 1GHz
9dB
150mW
40 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SC-70-3
CM5160-PBFREE
Central Semiconductor Corp

RF TRANS PNP 40V 500MHZ TO39

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封裝: -
Request a Quote
40V
500MHz
-
-
1W
10 @ 50mA, 5V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
HFA3127MJ-883
Harris Corporation

DUAL MARKED (5962-9474901MEA)

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 16-CERDIP
封裝: -
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12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
-55°C ~ 125°C (TJ)
Through Hole
16-CDIP (0.300", 7.62mm)
16-CERDIP
MS2210A
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
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-
-
-
-
-
-
-
-
-
-
-
2SC1009A-T1B-AT
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 250MHz
  • Noise Figure (dB Typ @ f): 2dB @ 1MHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
封裝: -
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30V
250MHz
2dB @ 1MHz
-
150mW
60 @ 1mA, 6V
50mA
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59