頁 37 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP460H6433XTMA1	Infineon Technologies	TRANS RF NPN 4.5V 70MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.8V Frequency - Transition: 22GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz Gain: 12.5dB ~ 26.5dB Power - Max: 230mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封裝: SC-82A, SOT-343	庫存7,904	5.8V	22GHz	0.7dB ~ 1.2dB @ 100MHz ~ 3GHz	12.5dB ~ 26.5dB	230mW	90 @ 20mA, 3V	70mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFP740E6327HTSA1	Infineon Technologies	TRANSISTOR RF NPN 30MA SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Gain: 27dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封裝: SC-82A, SOT-343	庫存4,096	4.7V	42GHz	0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz	27dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
BFG 235 E6327	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.7dB @ 900MHz Gain: 12.5dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 200mA, 8V Current - Collector (Ic) (Max): 300mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: PG-SOT223-4	封裝: TO-261-4, TO-261AA	庫存4,352	15V	5.5GHz	1.7dB @ 900MHz	12.5dB	2W	75 @ 200mA, 8V	300mA	150°C (TJ)	Surface Mount	TO-261-4, TO-261AA	PG-SOT223-4
MRF8372G	Microsemi Corporation	TRANS NPN 16V 200MA SO8 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 870MHz Noise Figure (dB Typ @ f): - Gain: 8dB ~ 9.5dB Power - Max: 2.2W DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,312	16V	870MHz	-	8dB ~ 9.5dB	2.2W	30 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
JAN2N4957	Microsemi Corporation	TRANS PNP 30V 30MA TO72 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: - Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	封裝: TO-72-3 Metal Can	庫存2,592	30V	-	3.5dB @ 450MHz	25dB	200mW	30 @ 5mA, 10V	30mA	-65°C ~ 200°C (TJ)	Through Hole	TO-72-3 Metal Can	TO-72
2SC5509-T2-A	CEL	RF TRANSISTOR NPN SOT-343F Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.3V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Gain: 14dB Power - Max: 190mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: SOT-343	封裝: SOT-343F	庫存286,320	3.3V	15GHz	1.2dB @ 2GHz	14dB	190mW	50 @ 10mA, 2V	100mA	150°C (TJ)	Surface Mount	SOT-343F	SOT-343
MAPR-002731-115M00	M/A-Com Technology Solutions	115W 2.7 - 3.1 GHZ 10% 36V Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: 8.06dB ~ 8.45dB Power - Max: 115W DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: - Supplier Device Package: -	封裝: -	庫存3,360	65V	-	-	8.06dB ~ 8.45dB	115W	-	-	200°C (TJ)	Chassis Mount	-	-
0912-25	Microsemi Corporation	TRANS RF BIPO 125W 2.5A 55CT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 8.5dB ~ 10dB Power - Max: 125W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55CT Supplier Device Package: 55CT	封裝: 55CT	庫存3,328	55V	960MHz ~ 1.215GHz	-	8.5dB ~ 10dB	125W	10 @ 300mA, 5V	2.5A	200°C (TJ)	Chassis Mount	55CT	55CT
NE85639-T1-A	CEL	RF TRANSISTOR NPN SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Gain: 13dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存4,160	12V	9GHz	1.1dB @ 1GHz	13dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
MPS5179_D75Z	Fairchild/ON Semiconductor	TRANS RF NPN 12V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存4,800	12V	2GHz	5dB @ 200MHz	15dB	350mW	25 @ 3mA, 1V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
AT-42035G	Broadcom Limited	TRANS NPN BIPO 12V 80MA 35-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10dB ~ 13.5dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (35 micro-X) Supplier Device Package: 35 micro-X	封裝: 4-SMD (35 micro-X)	庫存9,492	12V	8GHz	2dB ~ 3dB @ 2GHz ~ 4GHz	10dB ~ 13.5dB	600mW	30 @ 35mA, 8V	80mA	150°C (TJ)	Surface Mount	4-SMD (35 micro-X)	35 micro-X
NE85630-T1-A	CEL	RF TRANSISTOR NPN SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.2dB @ 1GHz Gain: 9dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存109,800	12V	4.5GHz	1.2dB @ 1GHz	9dB	150mW	40 @ 7mA, 3V	100mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
HFA3128B	Intersil	IC TRANSISTOR ARRAY PNP 16-SOIC Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存7,152	15V	5.5GHz	3.5dB @ 1GHz	-	150mW	20 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
NE68130-T1	CEL	TRANS NPN 1GHZ SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.5dB ~ 1.6dB @ 1GHz ~ 2GHz Gain: 9dB ~ 13.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323	封裝: SC-70, SOT-323	庫存7,056	10V	7GHz	1.5dB ~ 1.6dB @ 1GHz ~ 2GHz	9dB ~ 13.5dB	150mW	40 @ 7mA, 3V	65mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323
BFR92AW,115	NXP	TRANS NPN 15V 5GHZ SOT323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz Gain: - Power - Max: 300mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SOT-323-3	封裝: SC-70, SOT-323	庫存2,560	15V	5GHz	2dB ~ 3dB @ 1GHz ~ 2GHz	-	300mW	65 @ 15mA, 10V	25mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SOT-323-3
BFP420H6740XTSA1	Infineon Technologies	TRANS RF NPN 25GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封裝: SC-82A, SOT-343	庫存4,880	5V	25GHz	1.1dB @ 1.8GHz	21dB	160mW	60 @ 20mA, 4V	35mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
BFR35APE6327HTSA1	Infineon Technologies	TRANSISTOR RF NPN 15V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Gain: 10.5dB ~ 16dB Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 45mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,728	15V	5GHz	1.4dB ~ 2dB @ 900MHz ~ 1.8GHz	10.5dB ~ 16dB	280mW	70 @ 15mA, 8V	45mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
TAN300	Microsemi Corporation	TRANS RF BIPO 65V 20A 55KT1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 960MHz ~ 1.215GHz Noise Figure (dB Typ @ f): - Gain: 6.6dB Power - Max: 1166W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55KT Supplier Device Package: 55KT	封裝: 55KT	庫存3,744	65V	960MHz ~ 1.215GHz	-	6.6dB	1166W	10 @ 1mA, 5V	20A	200°C (TJ)	Chassis Mount	55KT	55KT
2SC5227A-5-TB-E	ON Semiconductor	TRANS NPN BIPO VHF-UHF CP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 1GHz Gain: 12dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	封裝: TO-236-3, SC-59, SOT-23-3	庫存2,000	10V	7GHz	1dB @ 1GHz	12dB	200mW	135 @ 20mA, 5V	70mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
MRF422MP	MACOM Technology Solutions	TRANSISTOR, 150W, 30MHZ,28V,MATC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 30MHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 13dB Power - Max: 290W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V Current - Collector (Ic) (Max): 20A Operating Temperature: - Mounting Type: Chassis Mount Package / Case: 211-11, Style 1 Supplier Device Package: 211-11, Style 1	封裝: -	Request a Quote	40V	30MHz	-	10dB ~ 13dB	290W	15 @ 5A, 5V	20A	-	Chassis Mount	211-11, Style 1	211-11, Style 1
MAPH-008780-000000	MACOM Technology Solutions	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
HFA3127B96-HC	Harris Corporation	RF 0.037A, 5-ELEMENT, ULTRA HIGH Transistor Type: 5 NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: -	Request a Quote	12V	8GHz	3.5dB @ 1GHz	-	150mW	40 @ 10mA, 2V	65mA	150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
2731-200P	Microsemi Corporation	RF TRANS 3.1GHZ MODULE Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: 2.7GHz ~ 3.1GHz Noise Figure (dB Typ @ f): - Gain: 8.7dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	Request a Quote	-	2.7GHz ~ 3.1GHz	-	8.7dB	-	-	-	-	Chassis Mount	Module	Module
BFP196WE6327	Infineon Technologies	RF TRANSISTOR, L BAND, NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封裝: -	Request a Quote	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	12.5dB ~ 19dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
2SC4228-A	CEL	RF TRANS NPN 10V 8GHZ SC70-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3	封裝: -	Request a Quote	10V	8GHz	1.9dB @ 2GHz	7.5dB	150mW	50 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70-3
NE851M13-T3-A	CEL	TRANS NPN LOW PRO M13 SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz Gain: 4dB ~ 5.5dB @ 2GHZ Power - Max: 140mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Current - Collector (Ic) (Max): 100mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-3 Supplier Device Package: M13	封裝: -	Request a Quote	5.5V	4.5GHz	1.9dB ~ 2.5dB @ 2GHz	4dB ~ 5.5dB @ 2GHZ	140mW	100 @ 5mA, 1V	100mA	-	Surface Mount	SOT-3	M13
2SD2228-T1-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSTR NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 16V Frequency - Transition: 50MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 100mA, 1V Current - Collector (Ic) (Max): 500mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封裝: -	Request a Quote	16V	50MHz	-	-	150mW	110 @ 100mA, 1V	500mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
BFP450	Infineon Technologies	RF SMALL SIGNAL BIPOLAR TRANSIST Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

BFP460H6433XTMA1

Infineon Technologies

TRANS RF NPN 4.5V 70MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.8V
Frequency - Transition: 22GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Gain: 12.5dB ~ 26.5dB
Power - Max: 230mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

庫存7,904

5.8V

22GHz

0.7dB ~ 1.2dB @ 100MHz ~ 3GHz

12.5dB ~ 26.5dB

230mW

90 @ 20mA, 3V

70mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFP740E6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 30MA SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain: 27dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

庫存4,096

4.7V

42GHz

0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz

27dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

BFG 235 E6327

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.7dB @ 900MHz
Gain: 12.5dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 200mA, 8V
Current - Collector (Ic) (Max): 300mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4

封裝: TO-261-4, TO-261AA

庫存4,352

15V

5.5GHz

1.7dB @ 900MHz

12.5dB

2W

75 @ 200mA, 8V

300mA

150°C (TJ)

Surface Mount

TO-261-4, TO-261AA

PG-SOT223-4

MRF8372G

Microsemi Corporation

TRANS NPN 16V 200MA SO8

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 870MHz
Noise Figure (dB Typ @ f): -
Gain: 8dB ~ 9.5dB
Power - Max: 2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,312

16V

870MHz

-

8dB ~ 9.5dB

2.2W

30 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

JAN2N4957

Microsemi Corporation

TRANS PNP 30V 30MA TO72

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
Gain: 25dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-72-3 Metal Can
Supplier Device Package: TO-72

封裝: TO-72-3 Metal Can

庫存2,592

30V

-

3.5dB @ 450MHz

25dB

200mW

30 @ 5mA, 10V

30mA

-65°C ~ 200°C (TJ)

Through Hole

TO-72-3 Metal Can

TO-72

2SC5509-T2-A

CEL

RF TRANSISTOR NPN SOT-343F

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.3V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Gain: 14dB
Power - Max: 190mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: SOT-343

封裝: SOT-343F

庫存286,320

3.3V

15GHz

1.2dB @ 2GHz

14dB

190mW

50 @ 10mA, 2V

100mA

150°C (TJ)

Surface Mount

SOT-343F

SOT-343

MAPR-002731-115M00

M/A-Com Technology Solutions

115W 2.7 - 3.1 GHZ 10% 36V

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: 8.06dB ~ 8.45dB
Power - Max: 115W
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,360

65V

-

8.06dB ~ 8.45dB

115W

-

200°C (TJ)

Chassis Mount

-

0912-25

Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55CT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 8.5dB ~ 10dB
Power - Max: 125W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55CT
Supplier Device Package: 55CT

封裝: 55CT

庫存3,328

55V

960MHz ~ 1.215GHz

-

8.5dB ~ 10dB

125W

10 @ 300mA, 5V

2.5A

200°C (TJ)

Chassis Mount

55CT

NE85639-T1-A

CEL

RF TRANSISTOR NPN SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Gain: 13dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存4,160

12V

9GHz

1.1dB @ 1GHz

13dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

MPS5179_D75Z

Fairchild/ON Semiconductor

TRANS RF NPN 12V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 2GHz
Noise Figure (dB Typ @ f): 5dB @ 200MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存4,800

12V

2GHz

5dB @ 200MHz

15dB

350mW

25 @ 3mA, 1V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

AT-42035G

Broadcom Limited

TRANS NPN BIPO 12V 80MA 35-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
Gain: 10dB ~ 13.5dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (35 micro-X)
Supplier Device Package: 35 micro-X

封裝: 4-SMD (35 micro-X)

庫存9,492

12V

8GHz

2dB ~ 3dB @ 2GHz ~ 4GHz

10dB ~ 13.5dB

600mW

30 @ 35mA, 8V

80mA

150°C (TJ)

Surface Mount

4-SMD (35 micro-X)

35 micro-X

NE85630-T1-A

CEL

RF TRANSISTOR NPN SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
Gain: 9dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存109,800

12V

4.5GHz

1.2dB @ 1GHz

9dB

150mW

40 @ 7mA, 3V

100mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

HFA3128B

Intersil

IC TRANSISTOR ARRAY PNP 16-SOIC

Transistor Type: 5 PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存7,152

15V

5.5GHz

3.5dB @ 1GHz

-

150mW

20 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

NE68130-T1

CEL

TRANS NPN 1GHZ SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 1.6dB @ 1GHz ~ 2GHz
Gain: 9dB ~ 13.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 7mA, 3V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323

封裝: SC-70, SOT-323

庫存7,056

10V

7GHz

1.5dB ~ 1.6dB @ 1GHz ~ 2GHz

9dB ~ 13.5dB

150mW

40 @ 7mA, 3V

65mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323

BFR92AW,115

NXP

TRANS NPN 15V 5GHZ SOT323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 1GHz ~ 2GHz
Gain: -
Power - Max: 300mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3

封裝: SC-70, SOT-323

庫存2,560

15V

5GHz

2dB ~ 3dB @ 1GHz ~ 2GHz

-

300mW

65 @ 15mA, 10V

25mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SOT-323-3

BFP420H6740XTSA1

Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 21dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封裝: SC-82A, SOT-343

庫存4,880

5V

25GHz

1.1dB @ 1.8GHz

21dB

160mW

60 @ 20mA, 4V

35mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

BFR35APE6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 15V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain: 10.5dB ~ 16dB
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 45mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存3,728

15V

5GHz

1.4dB ~ 2dB @ 900MHz ~ 1.8GHz

10.5dB ~ 16dB

280mW

70 @ 15mA, 8V

45mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

TAN300

Microsemi Corporation

TRANS RF BIPO 65V 20A 55KT1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f): -
Gain: 6.6dB
Power - Max: 1166W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1mA, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55KT
Supplier Device Package: 55KT

封裝: 55KT

庫存3,744

65V

960MHz ~ 1.215GHz

-

6.6dB

1166W

10 @ 1mA, 5V

20A

200°C (TJ)

Chassis Mount

55KT

2SC5227A-5-TB-E

ON Semiconductor

TRANS NPN BIPO VHF-UHF CP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Gain: 12dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 20mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

封裝: TO-236-3, SC-59, SOT-23-3

庫存2,000

10V

7GHz

1dB @ 1GHz

12dB

200mW

135 @ 20mA, 5V

70mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

MRF422MP

MACOM Technology Solutions

TRANSISTOR, 150W, 30MHZ,28V,MATC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 30MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 13dB
Power - Max: 290W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
Current - Collector (Ic) (Max): 20A
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: 211-11, Style 1
Supplier Device Package: 211-11, Style 1

封裝: -

Request a Quote

40V

30MHz

-

10dB ~ 13dB

290W

15 @ 5A, 5V

20A

-

Chassis Mount

211-11, Style 1

MAPH-008780-000000

MACOM Technology Solutions

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

HFA3127B96-HC

Harris Corporation

RF 0.037A, 5-ELEMENT, ULTRA HIGH

Transistor Type: 5 NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: -

Request a Quote

12V

8GHz

3.5dB @ 1GHz

-

150mW

40 @ 10mA, 2V

65mA

150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

2731-200P

Microsemi Corporation

RF TRANS 3.1GHZ MODULE

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: 2.7GHz ~ 3.1GHz
Noise Figure (dB Typ @ f): -
Gain: 8.7dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

Request a Quote

-

2.7GHz ~ 3.1GHz

-

8.7dB

-

Chassis Mount

Module

BFP196WE6327

Infineon Technologies

RF TRANSISTOR, L BAND, NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封裝: -

Request a Quote

12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

12.5dB ~ 19dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

2SC4228-A

CEL

RF TRANS NPN 10V 8GHZ SC70-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3

封裝: -

Request a Quote

10V

8GHz

1.9dB @ 2GHz

7.5dB

150mW

50 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70-3

NE851M13-T3-A

CEL

TRANS NPN LOW PRO M13 SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2.5dB @ 2GHz
Gain: 4dB ~ 5.5dB @ 2GHZ
Power - Max: 140mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-3
Supplier Device Package: M13

封裝: -

Request a Quote

5.5V

4.5GHz

1.9dB ~ 2.5dB @ 2GHz

4dB ~ 5.5dB @ 2GHZ

140mW

100 @ 5mA, 1V

100mA

-

Surface Mount

SOT-3

M13

2SD2228-T1-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 16V
Frequency - Transition: 50MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 100mA, 1V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封裝: -

Request a Quote

16V

50MHz

-

150mW

110 @ 100mA, 1V

500mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

BFP450

Infineon Technologies

RF SMALL SIGNAL BIPOLAR TRANSIST

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-