Infineon Technologies 產品

BSC059N03S G

Infineon Technologies

MOSFET N-CH 30V 73A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 73A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 35µA
• Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2670pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 17.5W (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

IPI80N06S3-05

Infineon Technologies

MOSFET N-CH 55V 80A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 110µA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10760pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 165W (Tc)
• Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 63A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

IRL2203NLPBF

Infineon Technologies

MOSFET N-CH 30V 116A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3290pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 180W (Tc)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

IRF1405S

Infineon Technologies

MOSFET N-CH 55V 131A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5480pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 5.3 mOhm @ 101A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP60R060C7XKSA1

Infineon Technologies

MOSFET N-CH 600V 35A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 800µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 162W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

封裝: TO-220-3

IPP50R520CPXKSA1

Infineon Technologies

MOSFET N-CH 500V 7.1A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 7.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 66W (Tc)
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封裝: TO-220-3

IRFS7787PBF

Infineon Technologies

MOSFET N-CH 75V 76A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.7V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 46A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263AB)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF6794MTR1PBF

Infineon Technologies

MOSFET N-CH 25V 32A DIRECTFET-MX

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4420pF @ 13V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 32A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MX
• Package / Case: DirectFET? Isometric MX

封裝: DirectFET? Isometric MX

BFR 92W E6327

Infineon Technologies

TRANSISTOR NPN RF 15V SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 11.5dB ~ 17dB
• Power - Max: 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
• Current - Collector (Ic) (Max): 45mA
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

BAT6207WE6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 20MA SOT-343

• Diode Type: Schottky - 2 Independent
• Voltage - Peak Reverse (Max): 40V
• Current - Max: 20mA
• Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): 100mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

IDK06G65C5XTMA2

Infineon Technologies

DIODE SCHOTTKY 650V 6A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 1.1mA @ 650V
• Capacitance @ Vr, F: 190pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-2
• Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TLE4254GSXUMA1

Infineon Technologies

IC REG LINEAR POS ADJ 70MA 8DSO

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): Tracking
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.4V @ 70mA
• Current - Output: 70mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 80µA ~ 15mA
• PSRR: 60dB (100Hz)
• Control Features: Enable
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

1EBN1001AEXUMA1

Infineon Technologies

IC IGBT DVR 1200V DSO14

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 13 V ~ 18 V
• Logic Voltage - VIL, VIH: 1.5V, 3.5V
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 50ns, 90ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

封裝: 14-SOIC (0.154", 3.90mm Width)

IRSM515-035DA

Infineon Technologies

IC MOTOR DRIVER 600V 23DIP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: UMOS
• Rds On (Typ): 1.8 Ohm
• Current - Output / Channel: 2.1A
• Current - Peak Output: 15A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 400V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Through Hole
• Package / Case: 23-DIP Module
• Supplier Device Package: 23-DIP

封裝: 23-DIP Module

SAF-XC878M-16FFI 3V3 AA

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 27MHz
• Connectivity: SPI, SSI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number of I/O: 40
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 3.25K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封裝: 64-LQFP

ESD1P0RFWH6327XTSA1

Infineon Technologies

TVS DIODE 70VWM 15VC SOT323

• Type: Steering (Rail to Rail)
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70V (Max)
• Voltage - Breakdown (Min): -
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 10A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: Ethernet, HDMI, RF Antenna
• Capacitance @ Frequency: 1pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

PVY116-TPBF

Infineon Technologies

IC RELAY PHOTOVO 40V 4-SOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 4.4 Ohm
• Load Current: 250mA
• Voltage - Input: 1.2VDC
• Voltage - Load: 0 ~ 40 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP
• Relay Type: Relay

封裝: 4-SOP (0.173", 4.40mm)

40060455

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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10282417

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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2ED21064S06JXUMA1

Infineon Technologies

IC GATE DRIVER DSO-14

• Driven Configuration: High-Side and Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10V ~ 20V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): 290mA, 700mA
• Input Type: -
• High Side Voltage - Max (Bootstrap): 20 V
• Rise / Fall Time (Typ): 100ns, 35ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-14

封裝: -

CY8C4147AZSS565XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 54
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-TQFP (10x10)

封裝: -

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S26HL01GTFPBHV023

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

封裝: -

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CYT2B63BADQ0AZSGS

Infineon Technologies

IC MCU 32BIT 576KB FLASH 64LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 80MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 49
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 64K x 8
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 22x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

封裝: -

IDFW60C65D1XKSA1

Infineon Technologies

DIODE ARRAY GP 650V 56A TO247-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 56A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 112 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 650 V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-AI

封裝: -

TD820N16KOFHPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 820 A
• Current - On State (It (RMS)) (Max): 1050 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 24800A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 135°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

封裝: -

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TC365DP64F300WAAKXUMA1

Infineon Technologies

IC MCU 32BIT 4MB FLASH 176LQFP

• Core Processor: TriCore™
• Core Size: 32-Bit Dual-Core
• Speed: 300MHz
• Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
• Peripherals: DMA, I2S, PWM, WDT
• Number of I/O: -
• Program Memory Size: 4MB (4M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 672K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: -
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-176-22

封裝: -

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CY8C6244LQI-S4D92

Infineon Technologies

IC MCU 32BIT 256KB FLASH 68QFN

• Core Processor: ARM® Cortex®-M0+/M4F
• Core Size: 32-Bit Dual-Core
• Speed: 50MHz, 150MHz
• Connectivity: CANbus, I2C, LINbus, QSPI, SPI, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 52
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 12b SAR, Sigma-Delta; D/A 1x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 68-VFQFN Exposed Pad
• Supplier Device Package: 68-QFN (8x8)

封裝: -

ISC073N12LM6ATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR,120V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120 V
• Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 86A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 60 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 7.3mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封裝: -