Infineon Technologies 產品

IRG7PH28UD1MPBF

Infineon Technologies

IGBT 1200V 30A 115W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
• Power - Max: 115W
• Switching Energy: 543µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: -/229ns
• Test Condition: 600V, 15A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封裝: TO-247-3

IRGI4059DPBF

Infineon Technologies

IGBT TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IRGP4065DPBF

Infineon Technologies

IGBT 300V 70A 160W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 300V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 70A
• Power - Max: 160W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: 30ns/170ns
• Test Condition: 180V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IPU80R1K4CEBKMA1

Infineon Technologies

MOSFET N-CH 800V 3.9A TO251-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 63W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封裝: TO-251-3 Short Leads, IPak, TO-251AA

IRF8113GPBF

Infineon Technologies

MOSFET N-CH 30V 17.2A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2910pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 17.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

IRF7534D1PBF

Infineon Technologies

MOSFET P-CH 20V 4.3A MICRO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1066pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.25W (Ta)
• Rds On (Max) @ Id, Vgs: 55 mOhm @ 4.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Micro8?
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

BSC035N10NS5ATMA1

Infineon Technologies

MOSFET N-CH 100V 100A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 115µA
• Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

BSP129H6327XTSA1

Infineon Technologies

MOSFET N-CH 240V 350MA SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
• Vgs(th) (Max) @ Id: 1V @ 108µA
• Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 108pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封裝: TO-261-4, TO-261AA

IRFS3307TRLPBF

Infineon Technologies

MOSFET N-CH 75V 120A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BGB 540 E6327

Infineon Technologies

TRANSISTOR RF ACT BIAS SOT-343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.5V
• Frequency - Transition: -
• Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
• Gain: 16dB ~ 17.5dB
• Power - Max: 120mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Current - Collector (Ic) (Max): 30mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

BB 689-02V E7902

Infineon Technologies

DIODE VAR CAP 30V 20MA SC-79

• Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
• Capacitance Ratio: 23.2
• Capacitance Ratio Condition: C1/C28
• Voltage - Peak Reverse (Max): 30V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: PG-SC79-2

封裝: SC-79, SOD-523

IRSF3021

Infineon Technologies

IC DRIVER LO SIDE 50V 3A TO220AB

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 155 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Slew Rate Controlled
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -55°C ~ 150°C (TJ)
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

BTS3134DATMA1

Infineon Technologies

IC SWITCH N-CH LOW SIDE DPAK

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 42V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 35 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IR1176S

Infineon Technologies

IC DRIVER SYNC 5V 4A 20-SSOP

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 4 V ~ 5.25 V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 20ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SSOP (0.209", 5.30mm Width)
• Supplier Device Package: 20-SSOP

封裝: 20-SSOP (0.209", 5.30mm Width)

BTN8960TAAUMA1

Infineon Technologies

IC MOTOR DRIVER PAR TO263-7

• Output Configuration: Half Bridge
• Applications: DC Motors, General Purpose
• Interface: Logic
• Load Type: Inductive
• Technology: DMOS
• Rds On (Typ): 7.5 mOhm LS, 6.7 mOhm HS
• Current - Output / Channel: 30A
• Current - Peak Output: 70A
• Voltage - Supply: 6 V ~ 40 V
• Voltage - Load: 6 V ~ 40 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Latch Function, Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting, Over Temperature, Short Circuit, UVLO
• Mounting Type: Surface Mount
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: PG-TO263-7

封裝: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

ICE3A2065ELJFKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS OVD 8DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 26 V
• Duty Cycle: 75%
• Frequency - Switching: 100kHz
• Power (Watts): 57W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8
• Mounting Type: Through Hole

封裝: 8-DIP (0.300", 7.62mm)

ESD5V3U2U-03F E6327

Infineon Technologies

TVS DIODE 5.3VWM 15VC TSFP3

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.3V (Max)
• Voltage - Breakdown (Min): 6V
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 3A (8/20µs)
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 0.4pF @ 1MHz
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

封裝: SOT-723

FS50R12KT4B11BOSA1

Infineon Technologies

IGBT MOD 1200V 50A 280W

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Power - Max: 280 W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

Request a Quote

51-14890Z01-A

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

Request a Quote

CY7C4142KV13-933FCXC

Infineon Technologies

CY7C4142KV13-933FCXC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, QDR IV
• Memory Size: 144Mbit
• Memory Interface: Parallel
• Clock Frequency: 933 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.26V ~ 1.34V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 361-BBGA, FCBGA
• Supplier Device Package: 361-FCBGA (21x21)

封裝: -

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TLF35585QVS01XUMA1

Infineon Technologies

OPTIREG PMIC

• Applications: Engine Management
• Current - Supply: -
• Voltage - Supply: 3V ~ 40V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-79

封裝: -

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BSM150GB170DLCE3256HDLA1

Infineon Technologies

IGBT MODULE 1700V 300A 1250W

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 300 A
• Power - Max: 1250 W
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 150A
• Current - Collector Cutoff (Max): 300 µA
• Input Capacitance (Cies) @ Vce: 10 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

封裝: -

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ILD8150EXUMA1

Infineon Technologies

IC LED DRVR RGLTR PWM 1.5A 8DSO

• Type: DC DC Regulator
• Topology: Step-Down (Buck)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 8V
• Voltage - Supply (Max): 80V
• Voltage - Output: -
• Current - Output / Channel: 1.5A
• Frequency: 2MHz
• Dimming: PWM
• Applications: LED Lighting
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-8-27

封裝: -

FP200R12N3T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-3

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 200 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
• Current - Collector Cutoff (Max): 20 µA
• Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO3B

封裝: -

CYAC1126-40LQXIT

Infineon Technologies

ACG1F

• Applications: USB Type C
• Core Processor: ARM® Cortex®-M0
• Program Memory Type: FLASH (16kB), ROM (32kB)
• Controller Series: -
• RAM Size: 4K x 8
• Interface: I2C, USB
• Number of I/O: 8
• Voltage - Supply: 2.7V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封裝: -

FS150R12N2T7B54BPSA1

Infineon Technologies

LOW POWER ECONO

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 150 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
• Current - Collector Cutoff (Max): 12 µA
• Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

封裝: -

CY25404ZXI243T

Infineon Technologies

IC SS CLOCK GENERATOR 20TSSOP

• Type: Spread Spectrum Clock Generator
• PLL: Yes
• Input: Clock, Crystal
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 1:9
• Differential - Input:Output: No/No
• Frequency - Max: 166MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 2.25V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

封裝: -

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FS150R17PE4BOSA1

Infineon Technologies

IGBT MOD 1700V 150A 835W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 150 A
• Power - Max: 835 W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 150A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -