Infineon Technologies 產品

IRG7T300HF12B

Infineon Technologies

MOD IGBT 1200V 300A POWIR 62

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 570A
• Power - Max: 1600W
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
• Current - Collector Cutoff (Max): 4mA
• Input Capacitance (Cies) @ Vce: 42.4nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 62 Module
• Supplier Device Package: POWIR? 62

封裝: POWIR? 62 Module

IRF6201PBF

Infineon Technologies

MOSFET N-CH 20V 27A 8-SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 27A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.1V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 195nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 8555pF @ 16V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 2.45 mOhm @ 27A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

BSP315PL6327HTSA1

Infineon Technologies

MOSFET P-CH 60V 1.17A SOT-223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 160µA
• Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

封裝: TO-261-4, TO-261AA

IRF7807Z

Infineon Technologies

MOSFET N-CH 30V 11A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

IPI90R500C3XKSA1

Infineon Technologies

MOSFET N-CH 900V 11A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 740µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 156W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封裝: TO-262-3 Long Leads, I2Pak, TO-262AA

AUIRF2907Z

Infineon Technologies

MOSFET N-CH 75V 75A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封裝: TO-220-3

PTFC270051MV2R1KXUMA1

Infineon Technologies

IC AMP RF LDMOS

• Transistor Type: -
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: -
• Noise Figure: -
• Current - Test: -
• Power - Output: -
• Voltage - Rated: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IRFI4019H-117P

Infineon Technologies

MOSFET 2N-CH 150V 8.7A TO-220FP

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 8.7A
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 5.2A, 10V
• Vgs(th) (Max) @ Id: 4.9V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
• Power - Max: 18W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-5 Full Pack
• Supplier Device Package: TO-220-5 Full-Pak

封裝: TO-220-5 Full Pack

BCR183E6359HTMA1

Infineon Technologies

TRANS PREBIAS PNP SOT23

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

BFS17WE6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 15V SOT-323

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 1.4GHz
• Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
• Gain: -
• Power - Max: 280mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
• Current - Collector (Ic) (Max): 25mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

BCR148SE6433HTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 100MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

BB 814 E6327 GR1

Infineon Technologies

DIODE VAR CAP 18V 50MA SOT-23

• Capacitance @ Vr, F: 22.7pF @ 8V, 1MHz
• Capacitance Ratio: 2.25
• Capacitance Ratio Condition: C2/C8
• Voltage - Peak Reverse (Max): 18V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: 200 @ 2V, 100 MHz
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

SLS10EREUSON3XTMA1

Infineon Technologies

AUTHENTICATION

• Type: -
• Applications: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

TLE42694GXUMA2

Infineon Technologies

IC REG LINEAR 100MA 8DSO

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

IP2021CTRPBF

Infineon Technologies

IC REG BUCK ADJ 30A DL 12LLGA

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 2
• Voltage - Input (Min): 8V
• Voltage - Input (Max): 14V
• Voltage - Output (Min/Fixed): 0.8V
• Voltage - Output (Max): 5V
• Current - Output: 30A
• Frequency - Switching: 300kHz ~ 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -10°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 12-LLGA
• Supplier Device Package: 12-LLGA (11x7.65)

封裝: 12-LLGA

IR38063MTRPBF

Infineon Technologies

IC REG BUCK ADJ 25A SYNC PQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 1.2V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.5V
• Voltage - Output (Max): 18.38V
• Current - Output: 25A
• Frequency - Switching: 400kHz ~ 1.5MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 34-PowerVFQFN
• Supplier Device Package: 34-QFN (5x7)

封裝: 34-PowerVFQFN

IR3447MTRPBF

Infineon Technologies

IC REG BUCK ADJ 25A SYNC PQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 5V
• Voltage - Input (Max): 21V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 18.06V
• Current - Output: 25A
• Frequency - Switching: 300kHz ~ 1.5MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 33-PowerVQFN
• Supplier Device Package: PQFN (5x6)

封裝: 33-PowerVQFN

TLE94110ELXUMA1

Infineon Technologies

IC DRIVER HALF-BRIDGE 24SSOP

• Output Configuration: Half Bridge (10)
• Applications: AC Motors, DC Motors, General Purpose
• Interface: SPI
• Load Type: Inductive
• Technology: Power MOSFET
• Rds On (Typ): 850 mOhm LS, 850 mOhm HS
• Current - Output / Channel: 500mA
• Current - Peak Output: 2A
• Voltage - Supply: 3 V ~ 5.5 V
• Voltage - Load: 5.5 V ~ 20 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: -
• Fault Protection: Over Temperature, Short Circuit, UVLO
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

TC297TP128F300SBBKXUMA1

Infineon Technologies

IC MCU 32BIT 8MB FLASH 292LFBGA

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 300MHz
• Connectivity: ASC, CAN, Ethernet, FlexRay, HSSL, I2C, LIN, MSC, PSI5, QSPI, SENT
• Peripherals: DMA, WDT
• Number of I/O: 169
• Program Memory Size: 8MB (8M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 384K x 8
• RAM Size: 728K x 8
• Voltage - Supply (Vcc/Vdd): 3.3V, 5V
• Data Converters: A/D 60x12b, 10 x Sigma-Delta
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

BGA 748L16 E6327

Infineon Technologies

IC AMP MMIC QUAD-BAND LN TSLP16

• Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
• P1dB: -7dBm (0.2mW)
• Gain: 16dB
• Noise Figure: 1.1dB
• RF Type: UMTS
• Voltage - Supply: 3.6V
• Current - Supply: 10mA
• Test Frequency: 880MHz
• Package / Case: 16-XFQFN Exposed Pad
• Supplier Device Package: TSLP-16-1

封裝: 16-XFQFN Exposed Pad

S6BP401AJ0SN1B20A

Infineon Technologies

IC ANALOG MCD AUTO 40QFN

• Topology: -
• Function: -
• Number of Outputs: -
• Frequency - Switching: -
• Voltage/Current - Output 1: -
• Voltage/Current - Output 2: -
• Voltage/Current - Output 3: -
• w/LED Driver: -
• w/Supervisor: -
• w/Sequencer: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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PEB4365-1T-SV1-2

Infineon Technologies

TSLIC-E TWIN SUBSCRIBER LINE INT

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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TD570N18KOFXPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 566 A
• Current - On State (It (RMS)) (Max): 1050 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 250 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 20000A @ 50Hz
• Current - Hold (Ih) (Max): 300 mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

封裝: -

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IMBF170R650M1XTMA1

Infineon Technologies

SICFET N-CH 1700V 7.4A TO263-7

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1700 V
• Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
• Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
• Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
• Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
• Vgs (Max): +20V, -10V
• FET Feature: -
• Power Dissipation (Max): 88W (Tc)
• Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7-13
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封裝: -

IGLD60R070D1AUMA1

Infineon Technologies

GANFET N-CH 600V 15A LSON-8

• FET Type: N-Channel
• Technology: GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
• Vgs (Max): -10V
• FET Feature: -
• Power Dissipation (Max): 114W (Tc)
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-LSON-8-1
• Package / Case: 8-LDFN Exposed Pad

封裝: -

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IAUC100N08S5N034ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 78µA
• Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-34
• Package / Case: 8-PowerTDFN

封裝: -

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CYT4BBBCEBQ0BZSGST

Infineon Technologies

IC MCU 32BT 4.0625MB FLSH 272BGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
• Core Size: 32-Bit Quad-Core
• Speed: 100MHz, 250MHz
• Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 220
• Program Memory Size: 4.0625MB (4.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256K x 8
• RAM Size: 768K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 90x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 272-LFBGA
• Supplier Device Package: 272-BGA (16x16)

封裝: -

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CY7C1059H30-10ZSXI

Infineon Technologies

ASYNC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 8Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封裝: -

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