Infineon Technologies 產品 - 電晶體 - IGBT - 單

IRGB8B60KPBF

Infineon Technologies

IGBT 600V 28A 167W TO220AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 28A
• Current - Collector Pulsed (Icm): 26A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
• Power - Max: 167W
• Switching Energy: 160µJ (on), 160µJ (off)
• Input Type: Standard
• Gate Charge: 18.2nC
• Td (on/off) @ 25°C: 23ns/140ns
• Test Condition: 400V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IKB15N60TATMA1

Infineon Technologies

IGBT 600V 30A 130W TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
• Power - Max: 130W
• Switching Energy: 570µJ
• Input Type: Standard
• Gate Charge: 87nC
• Td (on/off) @ 25°C: 17ns/188ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 34ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO-263

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IKB03N120H2ATMA1

Infineon Technologies

IGBT 1200V 9.6A 62.5W TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 9.6A
• Current - Collector Pulsed (Icm): 9.9A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
• Power - Max: 62.5W
• Switching Energy: 290µJ
• Input Type: Standard
• Gate Charge: 22nC
• Td (on/off) @ 25°C: 9.2ns/281ns
• Test Condition: 800V, 3A, 82 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGP20N65F5XKSA1

Infineon Technologies

IGBT 650V 40A 170W TO220-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 42A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
• Power - Max: 125W
• Switching Energy: 160µJ (on), 60µJ (off)
• Input Type: Standard
• Gate Charge: 48nC
• Td (on/off) @ 25°C: 20ns/165ns
• Test Condition: 400V, 10A, 32 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO-220-3

封裝: TO-220-3

AIHD15N60RATMA1

Infineon Technologies

IC DISCRETE 600V TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
• Power - Max: 250W
• Switching Energy: 370µJ (on), 530µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: 16ns/183ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IKD15N60RFAATMA1

Infineon Technologies

IGBT 600V 30A 250W PG-TO252-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: 240W
• Switching Energy: 270µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: 13ns/160ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4BC10KDPBF

Infineon Technologies

IGBT 600V 9A 38W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
• Power - Max: 38W
• Switching Energy: 250µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 49ns/97ns
• Test Condition: 480V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IKA20N65ET6XKSA1

Infineon Technologies

IGBT 650V 20A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IRGB6B60KPBF

Infineon Technologies

IGBT 600V 13A 90W TO220AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 26A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
• Power - Max: 90W
• Switching Energy: 110µJ (on), 135µJ (off)
• Input Type: Standard
• Gate Charge: 18.2nC
• Td (on/off) @ 25°C: 25ns/215ns
• Test Condition: 400V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IRGC4064B

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: Die

IRGB4B60KD1PBF

Infineon Technologies

IGBT 600V 11A 63W TO220AB

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 63W
• Switching Energy: 73µJ (on), 47µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 93ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IRGR4045DTRPBF

Infineon Technologies

IGBT 600V 12A 77W DPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 19.5nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRGS6B60KTRLPBF

Infineon Technologies

IGBT 600V 13A 90W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 26A
• Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
• Power - Max: 90W
• Switching Energy: 110µJ (on), 135µJ (off)
• Input Type: Standard
• Gate Charge: 18.2nC
• Td (on/off) @ 25°C: 25ns/215ns
• Test Condition: 400V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AIHD15N60RFATMA1

Infineon Technologies

IC DISCRETE 600V TO252-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
• Power - Max: 240W
• Switching Energy: 270µJ (on), 250µJ (off)
• Input Type: Standard
• Gate Charge: 90nC
• Td (on/off) @ 25°C: 13ns/160ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRG4BH20K-STRLP

Infineon Technologies

IGBT 1200V 11A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
• Power - Max: 60W
• Switching Energy: 450µJ (on), 440µJ (off)
• Input Type: Standard
• Gate Charge: 28nC
• Td (on/off) @ 25°C: 23ns/93ns
• Test Condition: 960V, 5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGB20N60H3

Infineon Technologies

IGBT 600V 40A 170W TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 170W
• Switching Energy: 690µJ
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 16ns/194ns
• Test Condition: 400V, 20A, 14.6 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4RC10SDTRRP

Infineon Technologies

IGBT 600V 14A 38W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 14A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
• Power - Max: 38W
• Switching Energy: 310µJ (on), 3.28mJ (off)
• Input Type: Standard
• Gate Charge: 15nC
• Td (on/off) @ 25°C: 76ns/815ns
• Test Condition: 480V, 8A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IGP15N60TXKSA1

Infineon Technologies

IGBT 600V 30A 130W TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
• Power - Max: 130W
• Switching Energy: 570µJ
• Input Type: Standard
• Gate Charge: 87nC
• Td (on/off) @ 25°C: 17ns/188ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

封裝: TO-220-3

IRGB4B60KPBF

Infineon Technologies

IGBT 600V 12A 63W TO220A

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 63W
• Switching Energy: 130µJ (on), 83µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

IRGR4045DTRLPBF

Infineon Technologies

IGBT 600V 12A 77W DPAK

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
• Power - Max: 77W
• Switching Energy: 56µJ (on), 122µJ (off)
• Input Type: Standard
• Gate Charge: 19.5nC
• Td (on/off) @ 25°C: 27ns/75ns
• Test Condition: 400V, 6A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 74ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRGC4630B

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封裝: Die

IKA15N65ET6XKSA1

Infineon Technologies

IGBT 650V 15A TO220-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IRGS4B60KD1TRRP

Infineon Technologies

IGBT 600V 11A 63W D2PAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 11A
• Current - Collector Pulsed (Icm): 22A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
• Power - Max: 63W
• Switching Energy: 73µJ (on), 47µJ (off)
• Input Type: Standard
• Gate Charge: 12nC
• Td (on/off) @ 25°C: 22ns/100ns
• Test Condition: 400V, 4A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 93ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGR3B60KD2PBF

Infineon Technologies

IGBT 600V 7.8A 52W DPAK

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 7.8A
• Current - Collector Pulsed (Icm): 15.6A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
• Power - Max: 52W
• Switching Energy: 62µJ (on), 39µJ (off)
• Input Type: Standard
• Gate Charge: 13nC
• Td (on/off) @ 25°C: 18ns/110ns
• Test Condition: 400V, 3A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 77ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IGB15N60TATMA1

Infineon Technologies

IGBT 600V 30A 130W TO263-3-2

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 45A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
• Power - Max: 130W
• Switching Energy: 570µJ
• Input Type: Standard
• Gate Charge: 87nC
• Td (on/off) @ 25°C: 17ns/188ns
• Test Condition: 400V, 15A, 15 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IGP10N60TXKSA1

Infineon Technologies

IGBT 600V 20A 110W TO220-3

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
• Power - Max: 110W
• Switching Energy: 430µJ
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: 12ns/215ns
• Test Condition: 400V, 10A, 23 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO220-3

封裝: TO-220-3

IGB20N65S5ATMA1

Infineon Technologies

IGBT PRODUCTS

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

IKB10N60TATMA1

Infineon Technologies

IGBT 600V 20A 110W TO263-3

• IGBT Type: NPT, Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
• Power - Max: 110W
• Switching Energy: 430µJ
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: 12ns/215ns
• Test Condition: 400V, 10A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 115ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO-263

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB