頁 25 - Infineon Technologies 產品 - 電晶體 - IGBT - 單 | 黑森爾電子
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Infineon Technologies 產品 - 電晶體 - IGBT - 單

記錄 1,429
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描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IKD04N60RAATMA1
Infineon Technologies

IGBT 600V 8A 75W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 90µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/146ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 43ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,100
600V
8A
12A
2.1V @ 15V, 4A
75W
90µJ (on), 150µJ (off)
Standard
27nC
14ns/146ns
400V, 4A, 43 Ohm, 15V
43ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
AIHD04N60RFATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 60µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 12ns/116ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,192
600V
8A
12A
2.5V @ 15V, 4A
75W
60µJ (on), 50µJ (off)
Standard
27nC
12ns/116ns
400V, 4A, 43 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRGC4059B
Infineon Technologies

IGBT CHIP WAFER

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 4A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: Die
庫存3,424
600V
4A
-
-
-
-
Standard
-
-
-
-
175°C (TJ)
Surface Mount
Die
Die
AIHD04N60RATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 90µJ (on), 150µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/146ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,808
600V
8A
12A
2.1V @ 15V, 4A
75W
90µJ (on), 150µJ (off)
Standard
27nC
14ns/146ns
400V, 4A, 43 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IGU04N60TAKMA1
Infineon Technologies

IGBT 600V TO251-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 42W
  • Switching Energy: 61µJ (on), 84µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/164ns
  • Test Condition: 400V, 4A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: PG-TO251-3
封裝: TO-251-3 Short Leads, IPak, TO-251AA
庫存7,168
600V
8A
12A
2.05V @ 15V, 4A
42W
61µJ (on), 84µJ (off)
Standard
27nC
14ns/164ns
400V, 4A, 47 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
PG-TO251-3
IKD03N60RFAATMA1
Infineon Technologies

IGBT 600V 5A 53.6W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 7.5A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
  • Power - Max: 53.6W
  • Switching Energy: 50µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.1nC
  • Td (on/off) @ 25°C: 10ns/128ns
  • Test Condition: 400V, 2.5A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,808
600V
5A
7.5A
2.5V @ 15V, 2.5A
53.6W
50µJ (on), 40µJ (off)
Standard
17.1nC
10ns/128ns
400V, 2.5A, 68 Ohm, 15V
31ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IGD01N120H2BUMA1
Infineon Technologies

IGBT 1200V 3.2A 28W TO252-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 3.2A
  • Current - Collector Pulsed (Icm): 3.5A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
  • Power - Max: 28W
  • Switching Energy: 140µJ
  • Input Type: Standard
  • Gate Charge: 8.6nC
  • Td (on/off) @ 25°C: 13ns/370ns
  • Test Condition: 800V, 1A, 241 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,488
1200V
3.2A
3.5A
2.8V @ 15V, 1A
28W
140µJ
Standard
8.6nC
13ns/370ns
800V, 1A, 241 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
AIHD03N60RFATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 5A
  • Current - Collector Pulsed (Icm): 7.5A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
  • Power - Max: 53.6W
  • Switching Energy: 50µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.1nC
  • Td (on/off) @ 25°C: 10ns/128ns
  • Test Condition: 400V, 2.5A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,672
600V
5A
7.5A
2.5V @ 15V, 2.5A
53.6W
50µJ (on), 40µJ (off)
Standard
17.1nC
10ns/128ns
400V, 2.5A, 68 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRGR2B60KDTRRPBF
Infineon Technologies

IGBT 600V 6.3A 35W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.3A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
  • Power - Max: 35W
  • Switching Energy: 74µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 11ns/150ns
  • Test Condition: 400V, 2A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,784
600V
6.3A
8A
2.25V @ 15V, 2A
35W
74µJ (on), 39µJ (off)
Standard
12nC
11ns/150ns
400V, 2A, 100 Ohm, 15V
68ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRGR2B60KDTRPBF
Infineon Technologies

IGBT 600V 6.3A 35W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.3A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
  • Power - Max: 35W
  • Switching Energy: 74µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 11ns/150ns
  • Test Condition: 400V, 2A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,192
600V
6.3A
8A
2.25V @ 15V, 2A
35W
74µJ (on), 39µJ (off)
Standard
12nC
11ns/150ns
400V, 2A, 100 Ohm, 15V
68ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
SGD02N60BUMA1
Infineon Technologies

IGBT 600V 6A 30W TO252-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
  • Power - Max: 30W
  • Switching Energy: 64µJ
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 20ns/259ns
  • Test Condition: 400V, 2A, 118 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,608
600V
6A
12A
2.4V @ 15V, 2A
30W
64µJ
Standard
14nC
20ns/259ns
400V, 2A, 118 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
hot AUIRG4PH50S
Infineon Technologies

IGBT 1200V 57A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 57A
  • Current - Collector Pulsed (Icm): 114A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A
  • Power - Max: 200W
  • Switching Energy: 1.8mJ (on), 19.6mJ (off)
  • Input Type: Standard
  • Gate Charge: 167nC
  • Td (on/off) @ 25°C: 32ns/845ns
  • Test Condition: 960V, 33A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存121,200
1200V
57A
114A
1.7V @ 15V, 33A
200W
1.8mJ (on), 19.6mJ (off)
Standard
167nC
32ns/845ns
960V, 33A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4PSH71KDPBF
Infineon Technologies

IGBT 1200V 78A 350W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 78A
  • Current - Collector Pulsed (Icm): 156A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 42A
  • Power - Max: 350W
  • Switching Energy: 5.68mJ (on), 3.23mJ (off)
  • Input Type: Standard
  • Gate Charge: 410nC
  • Td (on/off) @ 25°C: 67ns/230ns
  • Test Condition: 800V, 42A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 107ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
封裝: TO-274AA
庫存4,352
1200V
78A
156A
3.9V @ 15V, 42A
350W
5.68mJ (on), 3.23mJ (off)
Standard
410nC
67ns/230ns
800V, 42A, 5 Ohm, 15V
107ns
-55°C ~ 150°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)
hot IKW75N60TA
Infineon Technologies

IGBT 600V 80A 428W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 428W
  • Switching Energy: 4.5mJ
  • Input Type: Standard
  • Gate Charge: 470nC
  • Td (on/off) @ 25°C: 33ns/330ns
  • Test Condition: 400V, 75A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 121ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封裝: TO-247-3
庫存103,464
600V
80A
225A
2V @ 15V, 75A
428W
4.5mJ
Standard
470nC
33ns/330ns
400V, 75A, 5 Ohm, 15V
121ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247-3
hot IRG4PH40UD2-EP
Infineon Technologies

IGBT 1200V 41A 160W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 82A
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 21A
  • Power - Max: 160W
  • Switching Energy: 1.95mJ (on), 1.71mJ (off)
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 22ns/100ns
  • Test Condition: 800V, 21A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存4,992
1200V
41A
82A
3.1V @ 15V, 21A
160W
1.95mJ (on), 1.71mJ (off)
Standard
100nC
22ns/100ns
800V, 21A, 10 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRGP4062DPBF
Infineon Technologies

IGBT 600V 48A 250W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存245,724
600V
48A
72A
1.95V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
50nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
IGW25T120
Infineon Technologies

IGBT 1200V 50A 190W TO247-3

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
  • Power - Max: 190W
  • Switching Energy: 4.2mJ
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 50ns/560ns
  • Test Condition: 600V, 25A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
封裝: TO-247-3
庫存5,440
1200V
50A
75A
2.2V @ 15V, 25A
190W
4.2mJ
Standard
155nC
50ns/560ns
600V, 25A, 22 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRG4BC40W-LPBF
Infineon Technologies

IGBT 600V 40A 160W TO262

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 110µJ (on), 230µJ (off)
  • Input Type: Standard
  • Gate Charge: 98nC
  • Td (on/off) @ 25°C: 27ns/100ns
  • Test Condition: 480V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
封裝: TO-262-3 Long Leads, I2Pak, TO-262AA
庫存3,888
600V
40A
160A
2.5V @ 15V, 20A
160W
110µJ (on), 230µJ (off)
Standard
98nC
27ns/100ns
480V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IRG4BC30FDPBF
Infineon Technologies

IGBT 600V 31A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 124A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存2,112
600V
31A
124A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRG7PH46UD-EP
Infineon Technologies

IGBT 1200V 108A COPAK247

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 390W
  • Switching Energy: 2.61mJ (on), 1.85mJ (off)
  • Input Type: Standard
  • Gate Charge: 220nC
  • Td (on/off) @ 25°C: 45ns/410ns
  • Test Condition: 600V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封裝: TO-247-3
庫存7,216
1200V
40A
160A
2V @ 15V, 40A
390W
2.61mJ (on), 1.85mJ (off)
Standard
220nC
45ns/410ns
600V, 40A, 10 Ohm, 15V
140ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRGP4066DPBF
Infineon Technologies

IGBT 600V 140A 454W TO247AC

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 225A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 454W
  • Switching Energy: 2.47mJ (on), 2.16mJ (off)
  • Input Type: Standard
  • Gate Charge: 150nC
  • Td (on/off) @ 25°C: 50ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 155ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存30,600
600V
140A
225A
2.1V @ 15V, 75A
454W
2.47mJ (on), 2.16mJ (off)
Standard
150nC
50ns/200ns
400V, 75A, 10 Ohm, 15V
155ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4PC50UD-EPBF
Infineon Technologies

IGBT 600V 55A 200W TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 27A
  • Power - Max: 200W
  • Switching Energy: 990µJ (on), 590µJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 46ns/140ns
  • Test Condition: 480V, 27A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存6,448
600V
55A
220A
2V @ 15V, 27A
200W
990µJ (on), 590µJ (off)
Standard
180nC
46ns/140ns
480V, 27A, 5 Ohm, 15V
50ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot IRG4PC50FPBF
Infineon Technologies

IGBT 600V 70A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 280A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 39A
  • Power - Max: 200W
  • Switching Energy: 370µJ (on), 2.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 31ns/240ns
  • Test Condition: 480V, 39A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封裝: TO-247-3
庫存10,692
600V
70A
280A
1.6V @ 15V, 39A
200W
370µJ (on), 2.1mJ (off)
Standard
190nC
31ns/240ns
480V, 39A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
IKZ50N65EH5XKSA1
Infineon Technologies

IGBT 650V 50A CO-PACK TO-247-4

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
  • Power - Max: 273W
  • Switching Energy: 410µJ (on), 190µJ (off)
  • Input Type: Standard
  • Gate Charge: 109nC
  • Td (on/off) @ 25°C: 20ns/250ns
  • Test Condition: 400V, 25A, 12 Ohm, 15V
  • Reverse Recovery Time (trr): 53ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: PG-TO247-4
封裝: TO-247-4
庫存7,872
650V
85A
200A
2.1V @ 15V, 50A
273W
410µJ (on), 190µJ (off)
Standard
109nC
20ns/250ns
400V, 25A, 12 Ohm, 15V
53ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-4
PG-TO247-4
IKP40N65F5XKSA1
Infineon Technologies

IGBT 650V 74A 255W TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 74A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
  • Power - Max: 255W
  • Switching Energy: 360µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 95nC
  • Td (on/off) @ 25°C: 19ns/160ns
  • Test Condition: 400V, 20A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
封裝: TO-220-3
庫存2,560
650V
74A
120A
2.1V @ 15V, 40A
255W
360µJ (on), 100µJ (off)
Standard
95nC
19ns/160ns
400V, 20A, 15 Ohm, 15V
60ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
hot IRG4BC30KDPBF
Infineon Technologies

IGBT 600V 28A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存72,768
600V
28A
56A
2.7V @ 15V, 16A
100W
600µJ (on), 580µJ (off)
Standard
67nC
60ns/160ns
480V, 16A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IKP15N60TXKSA1
Infineon Technologies

IGBT 600V 30A 130W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
  • Power - Max: 130W
  • Switching Energy: 570µJ
  • Input Type: Standard
  • Gate Charge: 87nC
  • Td (on/off) @ 25°C: 17ns/188ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存4,848
600V
30A
45A
2.05V @ 15V, 15A
130W
570µJ
Standard
87nC
17ns/188ns
400V, 15A, 15 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
hot IRG4PSC71KDPBF
Infineon Technologies

IGBT 600V 85A 350W SUPER247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 85A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 350W
  • Switching Energy: 3.95mJ (on), 2.33mJ (off)
  • Input Type: Standard
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 82ns/282ns
  • Test Condition: 480V, 60A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 82ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-274AA
  • Supplier Device Package: SUPER-247 (TO-274AA)
封裝: TO-274AA
庫存11,100
600V
85A
200A
2.3V @ 15V, 60A
350W
3.95mJ (on), 2.33mJ (off)
Standard
340nC
82ns/282ns
480V, 60A, 5 Ohm, 15V
82ns
-55°C ~ 150°C (TJ)
Through Hole
TO-274AA
SUPER-247 (TO-274AA)