頁 26 - Infineon Technologies 產品 - 電晶體 - IGBT - 單 | 黑森爾電子
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Infineon Technologies 產品 - 電晶體 - IGBT - 單

記錄 1,429
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製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRG4BC20W-SPBF
Infineon Technologies

IGBT 600V 13A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存103,116
600V
13A
52A
2.6V @ 15V, 6.5A
60W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IKD10N60RFAATMA1
Infineon Technologies

IGBT 600V 20A 150W PG-TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 190µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/168ns
  • Test Condition: 400V, 10A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): 72ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,864
600V
20A
30A
2.5V @ 15V, 10A
150W
190µJ (on), 160µJ (off)
Standard
64nC
12ns/168ns
400V, 10A, 26 Ohm, 15V
72ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IGB03N120H2ATMA1
Infineon Technologies

IGBT 1200V 9.6A 62.5W TO263-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 9.6A
  • Current - Collector Pulsed (Icm): 9.9A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 62.5W
  • Switching Energy: 290µJ
  • Input Type: Standard
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 9.2ns/281ns
  • Test Condition: 800V, 3A, 82 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存5,504
1200V
9.6A
9.9A
2.8V @ 15V, 3A
62.5W
290µJ
Standard
22nC
9.2ns/281ns
800V, 3A, 82 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
IKD10N60RAATMA2
Infineon Technologies

IGBT 600V 20A 150W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 62ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,912
600V
20A
30A
2.1V @ 15V, 10A
150W
-
Standard
64nC
14ns/192ns
400V, 10A, 23 Ohm, 15V
62ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
AIHD10N60RFATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 190µJ (on), 160µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 12ns/168ns
  • Test Condition: 400V, 10A, 26 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,192
600V
20A
30A
2.5V @ 15V, 10A
150W
190µJ (on), 160µJ (off)
Standard
64nC
12ns/168ns
400V, 10A, 26 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
SGB02N120ATMA1
Infineon Technologies

IGBT 1200V 6.2A 62W TO263-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6.2A
  • Current - Collector Pulsed (Icm): 9.6A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
  • Power - Max: 62W
  • Switching Energy: 220µJ
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 23ns/260ns
  • Test Condition: 800V, 2A, 91 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存2,272
1200V
6.2A
9.6A
3.6V @ 15V, 2A
62W
220µJ
Standard
11nC
23ns/260ns
800V, 2A, 91 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
hot IRG4BC20WPBF
Infineon Technologies

IGBT 600V 13A 60W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 13A
  • Current - Collector Pulsed (Icm): 52A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
  • Power - Max: 60W
  • Switching Energy: 60µJ (on), 80µJ (off)
  • Input Type: Standard
  • Gate Charge: 26nC
  • Td (on/off) @ 25°C: 22ns/110ns
  • Test Condition: 480V, 6.5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封裝: TO-220-3
庫存6,160
600V
13A
52A
2.6V @ 15V, 6.5A
60W
60µJ (on), 80µJ (off)
Standard
26nC
22ns/110ns
480V, 6.5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
AIHD10N60RATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 30A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
  • Power - Max: 150W
  • Switching Energy: 210µJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 64nC
  • Td (on/off) @ 25°C: 14ns/192ns
  • Test Condition: 400V, 10A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,792
600V
20A
30A
2.1V @ 15V, 10A
150W
210µJ (on), 380µJ (off)
Standard
64nC
14ns/192ns
400V, 10A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IRG4RC10UDTRP
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,464
600V
8.5A
34A
2.6V @ 15V, 5A
38W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IGB15N65S5ATMA1
Infineon Technologies

IGBT PRODUCTS

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,408
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRG4RC10KDTRPBF
Infineon Technologies

IGBT 600V 9A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 9A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 250µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: 19nC
  • Td (on/off) @ 25°C: 49ns/97ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,296
600V
9A
18A
2.62V @ 15V, 5A
38W
250µJ (on), 140µJ (off)
Standard
19nC
49ns/97ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IKA06N60TXKSA1
Infineon Technologies

IGBT 600V 10A 28W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
  • Power - Max: 28W
  • Switching Energy: 200µJ
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 9.4ns/130ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 123ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3 Full Pack
庫存3,760
600V
10A
18A
2.05V @ 15V, 6A
28W
200µJ
Standard
42nC
9.4ns/130ns
400V, 6A, 23 Ohm, 15V
123ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
PG-TO220-3
IRG4RC10SDTRPBF
Infineon Technologies

IGBT 600V 14A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
  • Power - Max: 38W
  • Switching Energy: 310µJ (on), 3.28mJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 76ns/815ns
  • Test Condition: 480V, 8A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,048
600V
14A
18A
1.8V @ 15V, 8A
38W
310µJ (on), 3.28mJ (off)
Standard
15nC
76ns/815ns
480V, 8A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRG4RC10UDTRRP
Infineon Technologies

IGBT 600V 8.5A 38W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8.5A
  • Current - Collector Pulsed (Icm): 34A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 140µJ (on), 120µJ (off)
  • Input Type: Standard
  • Gate Charge: 15nC
  • Td (on/off) @ 25°C: 40ns/87ns
  • Test Condition: 480V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,888
600V
8.5A
34A
2.6V @ 15V, 5A
38W
140µJ (on), 120µJ (off)
Standard
15nC
40ns/87ns
480V, 5A, 100 Ohm, 15V
28ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IRGR2B60KDTRLPBF
Infineon Technologies

IGBT 600V 6.3A 35W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.3A
  • Current - Collector Pulsed (Icm): 8A
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
  • Power - Max: 35W
  • Switching Energy: 74µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 12nC
  • Td (on/off) @ 25°C: 11ns/150ns
  • Test Condition: 400V, 2A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存5,264
600V
6.3A
8A
2.25V @ 15V, 2A
35W
74µJ (on), 39µJ (off)
Standard
12nC
11ns/150ns
400V, 2A, 100 Ohm, 15V
68ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IKA10N65ET6XKSA1
Infineon Technologies

IGBT 650V 10A TO220-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,608
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGB01N120H2ATMA1
Infineon Technologies

IGBT 1200V 3.2A 28W TO263-3-2

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 3.2A
  • Current - Collector Pulsed (Icm): 3.5A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
  • Power - Max: 28W
  • Switching Energy: 140µJ
  • Input Type: Standard
  • Gate Charge: 8.6nC
  • Td (on/off) @ 25°C: 13ns/370ns
  • Test Condition: 800V, 1A, 241 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3-2
封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
庫存3,200
1200V
3.2A
3.5A
2.8V @ 15V, 1A
28W
140µJ
Standard
8.6nC
13ns/370ns
800V, 1A, 241 Ohm, 15V
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
IRGR3B60KD2TRRP
Infineon Technologies

IGBT 600V 7.8A 52W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7.8A
  • Current - Collector Pulsed (Icm): 15.6A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 52W
  • Switching Energy: 62µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 3A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,736
600V
7.8A
15.6A
2.4V @ 15V, 3A
52W
62µJ (on), 39µJ (off)
Standard
13nC
18ns/110ns
400V, 3A, 100 Ohm, 15V
77ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IKP04N60TXKSA1
Infineon Technologies

IGBT 600V 8A 42W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 4A
  • Power - Max: 42W
  • Switching Energy: 143µJ
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 14ns/164ns
  • Test Condition: 400V, 4A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 28ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存2,352
600V
8A
12A
2.05V @ 15V, 4A
42W
143µJ
Standard
27nC
14ns/164ns
400V, 4A, 47 Ohm, 15V
28ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
IRGR3B60KD2TRP
Infineon Technologies

IGBT 600V 7.8A 52W DPAK

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7.8A
  • Current - Collector Pulsed (Icm): 15.6A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 3A
  • Power - Max: 52W
  • Switching Energy: 62µJ (on), 39µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 18ns/110ns
  • Test Condition: 400V, 3A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 77ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,208
600V
7.8A
15.6A
2.4V @ 15V, 3A
52W
62µJ (on), 39µJ (off)
Standard
13nC
18ns/110ns
400V, 3A, 100 Ohm, 15V
77ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
IKD06N60RFAATMA1
Infineon Technologies

IGBT 600V 12A 100W PG-TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 90µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 8ns/105ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 48ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,096
600V
12A
18A
2.5V @ 15V, 6A
100W
90µJ (on), 90µJ (off)
Standard
48nC
8ns/105ns
400V, 6A, 23 Ohm, 15V
48ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD06N60RAATMA2
Infineon Technologies

IGBT 600V 12A 100W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,456
600V
12A
18A
2.1V @ 15V, 6A
100W
-
Standard
48nC
12ns/127ns
400V, 6A, 23 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKP06N60TXKSA1
Infineon Technologies

IGBT 600V 12A 88W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
  • Power - Max: 88W
  • Switching Energy: 200µJ
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 9ns/130ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 123ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存7,200
600V
12A
18A
2.05V @ 15V, 6A
88W
200µJ
Standard
42nC
9ns/130ns
400V, 6A, 23 Ohm, 15V
123ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3
AIHD06N60RFATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 90µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 8ns/105ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,232
600V
12A
18A
2.5V @ 15V, 6A
100W
90µJ (on), 90µJ (off)
Standard
48nC
8ns/105ns
400V, 6A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
AIHD06N60RATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
  • Power - Max: 100W
  • Switching Energy: 110µJ (on), 220µJ (off)
  • Input Type: Standard
  • Gate Charge: 48nC
  • Td (on/off) @ 25°C: 12ns/127ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存6,304
600V
12A
18A
2.1V @ 15V, 6A
100W
110µJ (on), 220µJ (off)
Standard
48nC
12ns/127ns
400V, 6A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IKD04N60RFAATMA1
Infineon Technologies

IGBT 600V 8A 75W TO252-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 12A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
  • Power - Max: 75W
  • Switching Energy: 60µJ (on), 50µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 12ns/116ns
  • Test Condition: 400V, 4A, 43 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存3,808
600V
8A
12A
2.5V @ 15V, 4A
75W
60µJ (on), 50µJ (off)
Standard
27nC
12ns/116ns
400V, 4A, 43 Ohm, 15V
34ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
SGD02N120BUMA1
Infineon Technologies

IGBT 1200V 6.2A 62W TO252-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 6.2A
  • Current - Collector Pulsed (Icm): 9.6A
  • Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 2A
  • Power - Max: 62W
  • Switching Energy: 220µJ
  • Input Type: Standard
  • Gate Charge: 11nC
  • Td (on/off) @ 25°C: 23ns/260ns
  • Test Condition: 800V, 2A, 91 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存4,496
1200V
6.2A
9.6A
3.6V @ 15V, 2A
62W
220µJ
Standard
11nC
23ns/260ns
800V, 2A, 91 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IGP06N60TXKSA1
Infineon Technologies

IGBT 600V 12A 88W TO220-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 12A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
  • Power - Max: 88W
  • Switching Energy: 200µJ
  • Input Type: Standard
  • Gate Charge: 42nC
  • Td (on/off) @ 25°C: 9ns/130ns
  • Test Condition: 400V, 6A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO220-3
封裝: TO-220-3
庫存2,832
600V
12A
18A
2.05V @ 15V, 6A
88W
200µJ
Standard
42nC
9ns/130ns
400V, 6A, 23 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO220-3