GeneSiC Semiconductor 產品 - 二極體 - 整流器 - 單 | 黑森爾電子
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GeneSiC Semiconductor 產品 - 二極體 - 整流器 - 單

記錄 792
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GD50MPS12H
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 92A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 92A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
  • Capacitance @ Vr, F: 1835pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存1,071
1200 V
92A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
15 µA @ 1200 V
1835pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD60MPS17H
GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 122A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 122A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
  • Capacitance @ Vr, F: 4577pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存540
1700 V
122A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 1700 V
4577pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD60MPS06H
GeneSiC Semiconductor

DIODE SIL CARB 650V 82A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 82A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 650 V
  • Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存4,068
650 V
82A
1.8 V @ 60 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 650 V
1463pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GB05MPS17-247
GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 25A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 6 µA @ 1700 V
  • Capacitance @ Vr, F: 334pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1700 V
25A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
6 µA @ 1700 V
334pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GB05MPS17-263
GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 18A TO263-7

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 18A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 470pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: TO-263-7
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1700 V
18A
-
No Recovery Time > 500mA (Io)
-
-
470pF @ 1V, 1MHz
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
GC10MPS12-252
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 50A TO252-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: 660pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
50A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
660pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
GC10MPS12-220
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 54A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 54A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
  • Capacitance @ Vr, F: 660pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
54A
1.8 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1200 V
660pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GD02MPS12E
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 8A TO252-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: 73pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存4,914
1200 V
8A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 1200 V
73pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
GC20MPS12-220
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 94A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 94A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
  • Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
94A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
18 µA @ 1200 V
1298pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GC20MPS12-247
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 90A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
  • Capacitance @ Vr, F: 1298pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
90A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
18 µA @ 1200 V
1298pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GC08MPS12-220
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 43A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 43A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
  • Capacitance @ Vr, F: 545pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
43A
1.8 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
7 µA @ 1200 V
545pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GC08MPS12-252
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 40A TO252-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 7 µA @ 1200 V
  • Capacitance @ Vr, F: 545pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
40A
1.8 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
7 µA @ 1200 V
545pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
GB50MPS17-247
GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 216A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 216A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 1700 V
  • Capacitance @ Vr, F: 3193pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1700 V
216A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1700 V
3193pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GD30MPS12J-TR
GeneSiC Semiconductor

1200V 30A TO-263-7 SIC SCHOTTKY

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 59A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 1.2 kV
  • Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: TO-263-7
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存7,095
1200 V
59A
1.8 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1.2 kV
1101pF @ 1V, 1MHz
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
GB25MPS17-247
GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 52A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 52A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
  • Capacitance @ Vr, F: 2350pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1700 V
52A
1.8 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 1700 V
2350pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GC05MPS12-252
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 27A TO252-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 27A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
  • Capacitance @ Vr, F: 359pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
27A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
4 µA @ 1200 V
359pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252-2
-55°C ~ 175°C
GC05MPS12-220
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 29A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 29A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
  • Capacitance @ Vr, F: 359pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
29A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
4 µA @ 1200 V
359pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GD30MPS06J-TR
GeneSiC Semiconductor

650V 30A TO-263-7 SIC SCHOTTKY M

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 51A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 650 V
  • Capacitance @ Vr, F: 735pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: TO-263-7
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存2,400
650 V
51A
1.8 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
5 µA @ 650 V
735pF @ 1V, 1MHz
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
GC02MPS12-220
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 12A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
  • Capacitance @ Vr, F: 127pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
12A
1.8 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
2 µA @ 1200 V
127pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GKN7112
GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 95A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 95A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1200 V
95A
1.5 V @ 60 A
Standard Recovery >500ns, > 200mA (Io)
-
10 mA @ 1200 V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 180°C
GC15MPS12-247
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 75A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
  • Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
75A
1.8 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
14 µA @ 1200 V
1089pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
GC15MPS12-220
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 82A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 82A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 14 µA @ 1200 V
  • Capacitance @ Vr, F: 1089pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
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1200 V
82A
1.8 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
14 µA @ 1200 V
1089pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
GC05MPS33J-TR
GeneSiC Semiconductor

3300V 5A TO-263-7 SIC SCHOTTKY M

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io): 11A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 3.3 kV
  • Capacitance @ Vr, F: 337pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: TO-263-7
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存2,253
3300 V
11A
3 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 3.3 kV
337pF @ 1V, 1MHz
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
GD05MPS17J-TR
GeneSiC Semiconductor

1700V 5A TO-247-2 SIC SCHOTTKY M

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1700 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 1.7 kV
  • Capacitance @ Vr, F: 361pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: TO-263-7
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
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1700 V
15A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1.7 kV
361pF @ 1V, 1MHz
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
GB05MPS33-263
GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 14A TO263-7

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io): 14A
  • Voltage - Forward (Vf) (Max) @ If: 3 V @ 5 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 3000 V
  • Capacitance @ Vr, F: 288pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: TO-263-7
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
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3300 V
14A
3 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
10 µA @ 3000 V
288pF @ 1V, 1MHz
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
-55°C ~ 175°C
GC05MPS33J
GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 5A TO263-7

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 3300 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package: TO-263-7
  • Operating Temperature - Junction: 175°C
封裝: -
庫存5,040
3300 V
5A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
Surface Mount
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
TO-263-7
175°C
GKR13012
GeneSiC Semiconductor

DIODE GP 1.2KV 165A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 60 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 22 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
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1200 V
165A
1.5 V @ 60 A
Standard Recovery >500ns, > 200mA (Io)
-
22 mA @ 1200 V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 180°C
GC50MPS12-247
GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 212A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 212A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
  • Capacitance @ Vr, F: 3263pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
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1200 V
212A
1.8 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
40 µA @ 1200 V
3263pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C