頁 2 - GeneSiC Semiconductor 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N6098	GeneSiC Semiconductor	DIODE SCHOTTKY 40V 50A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 700mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封裝: DO-203AB, DO-5, Stud	庫存8,964	40V	50A	700mV @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 30V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
S85Q	GeneSiC Semiconductor	DIODE GEN PURP 1.2KV 85A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 180°C	封裝: DO-203AB, DO-5, Stud	庫存7,008	1200V	85A	1.1V @ 85A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 180°C
1N1190AR	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 40A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	封裝: DO-203AB, DO-5, Stud	庫存6,660	600V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
1N1200A	GeneSiC Semiconductor	DIODE GEN PURP 100V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 200°C	封裝: DO-203AA, DO-4, Stud	庫存7,312	100V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 200°C
GB01SLT12-220	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 1A TO220AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 2µA @ 1200V Capacitance @ Vr, F: 69pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2	庫存17,592	1200V	1A	1.8V @ 1A	No Recovery Time > 500mA (Io)	0ns	2µA @ 1200V	69pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
GB20SLT12-247	GeneSiC Semiconductor	DIODE SCHOTTKY 1.2KV 20A TO247AC Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 2V @ 20A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 1200V Capacitance @ Vr, F: 968pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-247-2	庫存6,960	1200V	20A	2V @ 20A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	968pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247AC	-55°C ~ 175°C
GAP3SLT33-220FP	GeneSiC Semiconductor	DIODE SCHOTTKY 3.3KV 300MA TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 3300V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300mA Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 5µA @ 3300V Capacitance @ Vr, F: 42pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220FP Operating Temperature - Junction: -55°C ~ 175°C	封裝: TO-220-2 Full Pack	庫存34,752	3300V	300mA	1.7V @ 300mA	No Recovery Time > 500mA (Io)	0ns	5µA @ 3300V	42pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220FP	-55°C ~ 175°C
FR40G02	GeneSiC Semiconductor	DIODE GEN PURP 400V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封裝: DO-203AB, DO-5, Stud	庫存7,936	400V	40A	1V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
1N1190A	GeneSiC Semiconductor	DIODE GEN PURP 600V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C	封裝: DO-203AB, DO-5, Stud	庫存5,008	600V	40A	1.1V @ 40A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 190°C
GAP3SLT33-214	GeneSiC Semiconductor	DIODE SCHOTTKY 3.3KV 300MA DO214 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 3300V Current - Average Rectified (Io): 300mA (DC) Voltage - Forward (Vf) (Max) @ If: 2.2V @ 300mA Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 10µA @ 3300V Capacitance @ Vr, F: 42pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA Operating Temperature - Junction: -55°C ~ 175°C	封裝: DO-214AA, SMB	庫存12,864	3300V	300mA (DC)	2.2V @ 300mA	No Recovery Time > 500mA (Io)	0ns	10µA @ 3300V	42pF @ 1V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 175°C
GD05MPS17H	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 15A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Capacitance @ Vr, F: 361pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	1700 V	15A	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	361pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD05MPS17J	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 18A TO263-7 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
GB10MPS17-247	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 50A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 12 µA @ 1700 V Capacitance @ Vr, F: 669pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	1700 V	50A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	12 µA @ 1700 V	669pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD15MPS17H	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 36A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 36A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Capacitance @ Vr, F: 1082pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存4,050	1700 V	36A	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	1082pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GC50MPS06-247	GeneSiC Semiconductor	DIODE SIL CARB 650V 50A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max)	封裝: -	庫存1,887	650 V	50A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-247-2	TO-247-2	175°C (Max)
GD25MPS17H	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 56A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 56A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Capacitance @ Vr, F: 1083pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存7,053	1700 V	56A	1.8 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	1083pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GC50MPS33H	GeneSiC Semiconductor	DIODE SIL CARB 3.3KV 50A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 3300 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C	封裝: -	庫存477	3300 V	50A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-247-2	TO-247-2	175°C
GD10MPS12A	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 25A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 367pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	Request a Quote	1200 V	25A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	5 µA @ 1200 V	367pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
GD10MPS12H	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 10A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C	封裝: -	庫存8,418	1200 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-247-2	TO-247-2	175°C
GD10MPS12E	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 29A TO252-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 29A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 367pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存7,641	1200 V	29A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	5 µA @ 1200 V	367pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252-2	-55°C ~ 175°C
GD10MPS17H	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 26A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 26A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Capacitance @ Vr, F: 721pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存3,078	1700 V	26A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	721pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD20MPS12A	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 42A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 42A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 737pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存27	1200 V	42A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	737pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
GD20MPS12H	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 39A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 39A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: 737pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存9,507	1200 V	39A	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	737pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD30MPS06A	GeneSiC Semiconductor	DIODE SIL CARB 650V 30A TO220-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: 175°C	封裝: -	庫存558	650 V	30A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-220-2	TO-220-2	175°C
GD30MPS06H	GeneSiC Semiconductor	DIODE SIL CARB 650V 49A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 49A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 735pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存663	650 V	49A	-	No Recovery Time > 500mA (Io)	-	-	735pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD30MPS06J	GeneSiC Semiconductor	DIODE SIL CARB 650V 51A TO263-7 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 51A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 735pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存1,989	650 V	51A	-	No Recovery Time > 500mA (Io)	-	-	735pF @ 1V, 1MHz	Surface Mount	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	TO-263-7	-55°C ~ 175°C
GD30MPS12H	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 55A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 55A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Capacitance @ Vr, F: 1101pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封裝: -	庫存3,387	1200 V	55A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 1200 V	1101pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD30MPS12J	GeneSiC Semiconductor	DIODE SIL CARB 1.2KV 30A TO263-7 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: - Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Supplier Device Package: TO-263-7 Operating Temperature - Junction: 175°C	封裝: -	Request a Quote	1200 V	30A	-	No Recovery Time > 500mA (Io)	0 ns	-	-	Surface Mount	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	TO-263-7	175°C

1N6098

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 50A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封裝: DO-203AB, DO-5, Stud

庫存8,964

40V

50A

700mV @ 50A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 30V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

S85Q

GeneSiC Semiconductor

DIODE GEN PURP 1.2KV 85A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 180°C

封裝: DO-203AB, DO-5, Stud

庫存7,008

1200V

85A

1.1V @ 85A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 180°C

1N1190AR

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C

封裝: DO-203AB, DO-5, Stud

庫存6,660

600V

40A

1.1V @ 40A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 190°C

1N1200A

GeneSiC Semiconductor

DIODE GEN PURP 100V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C

封裝: DO-203AA, DO-4, Stud

庫存7,312

100V

12A

1.1V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 200°C

GB01SLT12-220

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 1A TO220AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 2µA @ 1200V
Capacitance @ Vr, F: 69pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2

庫存17,592

1200V

1A

1.8V @ 1A

No Recovery Time > 500mA (Io)

0ns

2µA @ 1200V

69pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

GB20SLT12-247

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 20A TO247AC

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 2V @ 20A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Capacitance @ Vr, F: 968pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-247-2

庫存6,960

1200V

20A

2V @ 20A

No Recovery Time > 500mA (Io)

0ns

200µA @ 1200V

968pF @ 1V, 1MHz

Through Hole

TO-247-2

TO-247AC

-55°C ~ 175°C

GAP3SLT33-220FP

GeneSiC Semiconductor

DIODE SCHOTTKY 3.3KV 300MA TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 3300V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 300mA
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 5µA @ 3300V
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -55°C ~ 175°C

封裝: TO-220-2 Full Pack

庫存34,752

3300V

300mA

1.7V @ 300mA

No Recovery Time > 500mA (Io)

0ns

5µA @ 3300V

42pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack

TO-220FP

-55°C ~ 175°C

FR40G02

GeneSiC Semiconductor

DIODE GEN PURP 400V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封裝: DO-203AB, DO-5, Stud

庫存7,936

400V

40A

1V @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

1N1190A

GeneSiC Semiconductor

DIODE GEN PURP 600V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 40A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C

封裝: DO-203AB, DO-5, Stud

庫存5,008

600V

40A

1.1V @ 40A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 190°C

GAP3SLT33-214

GeneSiC Semiconductor

DIODE SCHOTTKY 3.3KV 300MA DO214

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 3300V
Current - Average Rectified (Io): 300mA (DC)
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 300mA
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 10µA @ 3300V
Capacitance @ Vr, F: 42pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA
Operating Temperature - Junction: -55°C ~ 175°C

封裝: DO-214AA, SMB

庫存12,864

3300V

300mA (DC)

2.2V @ 300mA

No Recovery Time > 500mA (Io)

0ns

10µA @ 3300V

42pF @ 1V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA

-55°C ~ 175°C

GD05MPS17H

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 15A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Capacitance @ Vr, F: 361pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

1700 V

15A

1.8 V @ 5 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 1700 V

361pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

GD05MPS17J

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 18A TO263-7

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封裝: -

Request a Quote

-

GB10MPS17-247

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 50A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 12 µA @ 1700 V
Capacitance @ Vr, F: 669pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

1700 V

50A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

12 µA @ 1700 V

669pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

GD15MPS17H

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 36A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 36A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Capacitance @ Vr, F: 1082pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存4,050

1700 V

36A

1.8 V @ 15 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 1700 V

1082pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

GC50MPS06-247

GeneSiC Semiconductor

DIODE SIL CARB 650V 50A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)

封裝: -

庫存1,887

650 V

50A

-

No Recovery Time > 500mA (Io)

0 ns

-

Through Hole

TO-247-2

175°C (Max)

GD25MPS17H

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 56A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 56A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Capacitance @ Vr, F: 1083pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存7,053

1700 V

56A

1.8 V @ 25 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 1700 V

1083pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

GC50MPS33H

GeneSiC Semiconductor

DIODE SIL CARB 3.3KV 50A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 3300 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C

封裝: -

庫存477

3300 V

50A

-

No Recovery Time > 500mA (Io)

0 ns

-

Through Hole

TO-247-2

175°C

GD10MPS12A

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 25A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

Request a Quote

1200 V

25A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

5 µA @ 1200 V

367pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

GD10MPS12H

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 10A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C

封裝: -

庫存8,418

1200 V

10A

-

No Recovery Time > 500mA (Io)

0 ns

-

Through Hole

TO-247-2

175°C

GD10MPS12E

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 29A TO252-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 29A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存7,641

1200 V

29A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

5 µA @ 1200 V

367pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252-2

-55°C ~ 175°C

GD10MPS17H

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 26A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 26A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
Capacitance @ Vr, F: 721pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存3,078

1700 V

26A

1.8 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

20 µA @ 1700 V

721pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

GD20MPS12A

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 42A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 42A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存27

1200 V

42A

1.8 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

10 µA @ 1200 V

737pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

GD20MPS12H

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 39A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 39A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存9,507

1200 V

39A

1.8 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

10 µA @ 1200 V

737pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

GD30MPS06A

GeneSiC Semiconductor

DIODE SIL CARB 650V 30A TO220-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: 175°C

封裝: -

庫存558

650 V

30A

-

No Recovery Time > 500mA (Io)

0 ns

-

Through Hole

TO-220-2

175°C

GD30MPS06H

GeneSiC Semiconductor

DIODE SIL CARB 650V 49A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 49A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存663

650 V

49A

-

No Recovery Time > 500mA (Io)

-

735pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

GD30MPS06J

GeneSiC Semiconductor

DIODE SIL CARB 650V 51A TO263-7

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 51A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 735pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存1,989

650 V

51A

-

No Recovery Time > 500mA (Io)

-

735pF @ 1V, 1MHz

Surface Mount

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

TO-263-7

-55°C ~ 175°C

GD30MPS12H

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 55A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 55A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封裝: -

庫存3,387

1200 V

55A

1.8 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

20 µA @ 1200 V

1101pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

GD30MPS12J

GeneSiC Semiconductor

DIODE SIL CARB 1.2KV 30A TO263-7

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: -
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Supplier Device Package: TO-263-7
Operating Temperature - Junction: 175°C

封裝: -

Request a Quote

1200 V

30A

-

No Recovery Time > 500mA (Io)

0 ns

-

Surface Mount

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

TO-263-7

175°C