頁 82 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SI5944DU-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 40V 6A 8PWRPAK FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V Power - Max: 10W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? ChipFET? Dual Supplier Device Package: PowerPAK? ChipFet Dual	封裝: PowerPAK? ChipFET? Dual	庫存7,680	Logic Level Gate	40V	6A	112 mOhm @ 3.3A, 10V	3V @ 250µA	6.6nC @ 10V	210pF @ 20V	10W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? ChipFET? Dual	PowerPAK? ChipFet Dual
SI3981DV-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 1.6A 6-TSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.6A Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封裝: SOT-23-6 Thin, TSOT-23-6	庫存396,012	Logic Level Gate	20V	1.6A	185 mOhm @ 1.9A, 4.5V	1.1V @ 250µA	5nC @ 4.5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
SIA914DJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封裝: PowerPAK? SC-70-6 Dual	庫存367,092	Logic Level Gate	20V	4.5A	53 mOhm @ 3.7A, 4.5V	1V @ 250µA	11.5nC @ 8V	400pF @ 10V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
AON3806	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 6A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	封裝: 8-SMD, Flat Lead	庫存50,400	Logic Level Gate	20V	6A	26 mOhm @ 6.8A, 4.5V	1.1V @ 250µA	9nC @ 4.5V	500pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
DMN5L06DW-7	Diodes Incorporated	MOSFET 2N-CH 50V 0.28A SOT-363 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 200mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存6,784	Logic Level Gate	50V	280mA	3 Ohm @ 200mA, 2.7V	1.2V @ 250µA	-	50pF @ 25V	200mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PMWD16UN,518	NXP	MOSFET 2N-CH 20V 9.9A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9.9A Rds On (Max) @ Id, Vgs: 19 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存3,680	Logic Level Gate	20V	9.9A	19 mOhm @ 3.5A, 4.5V	700mV @ 1mA	23.6nC @ 4.5V	1366pF @ 16V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IPG20N06S415ATMA2	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封裝: 8-PowerVDFN	庫存3,808	Standard	60V	20A	15.5 mOhm @ 17A, 10V	4V @ 20µA	29nC @ 10V	2260pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
SQJ952EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 8A PPAK SO-8 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,112	-	-	-	-	-	-	-	-	-	-	-	-
BUK9K35-60E,115	Nexperia USA Inc.	MOSFET 2N-CH 60V 22A LFPAK56D FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V Power - Max: 38W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封裝: SOT-1205, 8-LFPAK56	庫存3,568	Logic Level Gate	60V	22A	32 mOhm @ 5A, 10V	2.1V @ 1mA	14.2nC @ 10V	1081pF @ 25V	38W	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
STL20DN10F7	STMicroelectronics	MOSFET 2N-CH 100V 20A PWRFLAT56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V Power - Max: 62.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	封裝: 8-PowerVDFN	庫存6,592	Standard	100V	20A	67 mOhm @ 2.5A, 10V	4.5V @ 250µA	7.8nC @ 10V	408pF @ 50V	62.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
TPS1120D	Texas Instruments	MOSFET 2P-CH 15V 1.17A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 15V Current - Continuous Drain (Id) @ 25°C: 1.17A Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 840mW Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,888	Logic Level Gate	15V	1.17A	180 mOhm @ 1.5A, 10V	1.5V @ 250µA	5.45nC @ 10V	-	840mW	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ALD110800APCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封裝: 16-DIP (0.300", 7.62mm)	庫存7,440	Standard	10.6V	-	500 Ohm @ 4V	10mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SI7994DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 60A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	封裝: PowerPAK? SO-8 Dual	庫存7,712	Standard	30V	60A	5.6 mOhm @ 20A, 10V	3V @ 250µA	80nC @ 10V	3500pF @ 15V	46W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
QS8K2TR	Rohm Semiconductor	MOSFET 2N-CH 30V 3.5A TSMT8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V Power - Max: 1.25W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: TSMT8	封裝: 8-SMD, Flat Lead	庫存4,832	Logic Level Gate	30V	3.5A	54 mOhm @ 3.5A, 4.5V	1.5V @ 1mA	4.6nC @ 4.5V	285pF @ 10V	1.25W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	TSMT8
DMN2011UFX-7	Diodes Incorporated	MOSFET 2N-CH 20V 12.2A DFN2050-4 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V Power - Max: 2.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-VFDFN Exposed Pad Supplier Device Package: V-DFN2050-4	封裝: 4-VFDFN Exposed Pad	庫存28,104	Standard	20V	12.2A (Ta)	9.5 mOhm @ 10A, 4.5V	1V @ 250µA	56nC @ 10V	2248pF @ 10V	2.1W	-55°C ~ 150°C (TJ)	Surface Mount	4-VFDFN Exposed Pad	V-DFN2050-4
IRF7105TRPBF	Infineon Technologies	MOSFET N/P-CH 25V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存77,076	Standard	25V	3.5A, 2.3A	100 mOhm @ 1A, 10V	3V @ 250µA	27nC @ 10V	330pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SSM6N35FE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.18A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 180mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封裝: SOT-563, SOT-666	庫存103,914	Logic Level Gate	20V	180mA	3 Ohm @ 50mA, 4V	1V @ 1mA	-	9.5pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
SH8JB5TB1	Rohm Semiconductor	MOSFET 2P-CH 40V 8.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存38,187	-	40V	8.5A (Ta)	15.3mOhm @ 8.5A, 10V	2.5V @ 1mA	51nC @ 10V	2870pF @ 20V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FF4MR12KM1HP	Infineon Technologies	MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SMC6280P	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
NP29N06QUK-E1-AY	Renesas Electronics Corporation	MOSFET 2N-CH 60V 30A 8HSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 1W (Ta), 44W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-HSON (5x5.4)	封裝: -	庫存7,500	-	60V	30A (Tc)	21mOhm @ 15A, 10V	4V @ 250µA	30nC @ 10V	1500pF @ 25V	1W (Ta), 44W (Tc)	175°C	Surface Mount	8-PowerLDFN	8-HSON (5x5.4)
DMT3006LDV-7	Diodes Incorporated	MOSFET 2N-CH 30V 25A POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封裝: -	Request a Quote	-	30V	25A (Tc)	10mOhm @ 9A, 10V	3V @ 250µA	16.7nC @ 10V	1155pF @ 15V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
FW340-TL-E-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MCB20P1200LB-TUB	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	封裝: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
IRF7503TR	Infineon Technologies	MOSFET 2N-CH 30V 2.4A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	封裝: -	Request a Quote	Logic Level Gate	30V	2.4A	135mOhm @ 1.7A, 10V	1V @ 250µA	12nC @ 10V	210pF @ 25V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
DMN15M3UCA6-7	Diodes Incorporated	MOSFET 2N-CH 14V X3-DSN2718-6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 14V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN2718-6	封裝: -	Request a Quote	-	14V	16.5A (Ta)	5.8mOhm @ 3A, 4.5V	1.3V @ 1mA	35.2nC @ 4.5V	2360pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN2718-6
DMN16M8UCA6-7	Diodes Incorporated	MOSFET 2N-CH 12V X3-DSN2718-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 6V Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 6V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN2718-6	封裝: -	Request a Quote	-	12V	15.5A (Ta)	5.6mOhm @ 3A, 4.5V	1.3V @ 1mA	45.4nC @ 6V	2333pF @ 6V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN2718-6
MSCSM170AM058CT6AG	Microchip Technology	SIC 2N-CH 1700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Power - Max: 1.642kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存3	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-

SI5944DU-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 40V 6A 8PWRPAK

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 112 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 20V
Power - Max: 10W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? ChipFET? Dual
Supplier Device Package: PowerPAK? ChipFet Dual

封裝: PowerPAK? ChipFET? Dual

庫存7,680

Logic Level Gate

40V

6A

112 mOhm @ 3.3A, 10V

3V @ 250µA

6.6nC @ 10V

210pF @ 20V

10W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? ChipFET? Dual

PowerPAK? ChipFet Dual

SI3981DV-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 1.6A 6-TSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封裝: SOT-23-6 Thin, TSOT-23-6

庫存396,012

Logic Level Gate

20V

1.6A

185 mOhm @ 1.9A, 4.5V

1.1V @ 250µA

5nC @ 4.5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

SIA914DJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封裝: PowerPAK? SC-70-6 Dual

庫存367,092

Logic Level Gate

20V

4.5A

53 mOhm @ 3.7A, 4.5V

1V @ 250µA

11.5nC @ 8V

400pF @ 10V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

AON3806

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 6A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

封裝: 8-SMD, Flat Lead

庫存50,400

Logic Level Gate

20V

6A

26 mOhm @ 6.8A, 4.5V

1.1V @ 250µA

9nC @ 4.5V

500pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

DMN5L06DW-7

Diodes Incorporated

MOSFET 2N-CH 50V 0.28A SOT-363

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 280mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存6,784

Logic Level Gate

50V

280mA

3 Ohm @ 200mA, 2.7V

1.2V @ 250µA

-

50pF @ 25V

200mW

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PMWD16UN,518

NXP

MOSFET 2N-CH 20V 9.9A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9.9A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 23.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1366pF @ 16V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存3,680

Logic Level Gate

20V

9.9A

19 mOhm @ 3.5A, 4.5V

700mV @ 1mA

23.6nC @ 4.5V

1366pF @ 16V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IPG20N06S415ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封裝: 8-PowerVDFN

庫存3,808

Standard

60V

20A

15.5 mOhm @ 17A, 10V

4V @ 20µA

29nC @ 10V

2260pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

SQJ952EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 8A PPAK SO-8

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,112

-

BUK9K35-60E,115

Nexperia USA Inc.

MOSFET 2N-CH 60V 22A LFPAK56D

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V
Power - Max: 38W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封裝: SOT-1205, 8-LFPAK56

庫存3,568

Logic Level Gate

60V

22A

32 mOhm @ 5A, 10V

2.1V @ 1mA

14.2nC @ 10V

1081pF @ 25V

38W

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

STL20DN10F7

STMicroelectronics

MOSFET 2N-CH 100V 20A PWRFLAT56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V
Power - Max: 62.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

封裝: 8-PowerVDFN

庫存6,592

Standard

100V

20A

67 mOhm @ 2.5A, 10V

4.5V @ 250µA

7.8nC @ 10V

408pF @ 50V

62.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

TPS1120D

Texas Instruments

MOSFET 2P-CH 15V 1.17A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 15V
Current - Continuous Drain (Id) @ 25°C: 1.17A
Rds On (Max) @ Id, Vgs: 180 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 840mW
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,888

Logic Level Gate

15V

1.17A

180 mOhm @ 1.5A, 10V

1.5V @ 250µA

5.45nC @ 10V

-

840mW

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ALD110800APCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封裝: 16-DIP (0.300", 7.62mm)

庫存7,440

Standard

10.6V

-

500 Ohm @ 4V

10mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SI7994DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 60A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

封裝: PowerPAK? SO-8 Dual

庫存7,712

Standard

30V

60A

5.6 mOhm @ 20A, 10V

3V @ 250µA

80nC @ 10V

3500pF @ 15V

46W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

QS8K2TR

Rohm Semiconductor

MOSFET 2N-CH 30V 3.5A TSMT8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 10V
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: TSMT8

封裝: 8-SMD, Flat Lead

庫存4,832

Logic Level Gate

30V

3.5A

54 mOhm @ 3.5A, 4.5V

1.5V @ 1mA

4.6nC @ 4.5V

285pF @ 10V

1.25W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

TSMT8

DMN2011UFX-7

Diodes Incorporated

MOSFET 2N-CH 20V 12.2A DFN2050-4

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V
Power - Max: 2.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VFDFN Exposed Pad
Supplier Device Package: V-DFN2050-4

封裝: 4-VFDFN Exposed Pad

庫存28,104

Standard

20V

12.2A (Ta)

9.5 mOhm @ 10A, 4.5V

1V @ 250µA

56nC @ 10V

2248pF @ 10V

2.1W

-55°C ~ 150°C (TJ)

Surface Mount

4-VFDFN Exposed Pad

V-DFN2050-4

IRF7105TRPBF

Infineon Technologies

MOSFET N/P-CH 25V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存77,076

Standard

25V

3.5A, 2.3A

100 mOhm @ 1A, 10V

3V @ 250µA

27nC @ 10V

330pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SSM6N35FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.18A ES6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

封裝: SOT-563, SOT-666

庫存103,914

Logic Level Gate

20V

180mA

3 Ohm @ 50mA, 4V

1V @ 1mA

-

9.5pF @ 3V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

SH8JB5TB1

Rohm Semiconductor

MOSFET 2P-CH 40V 8.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存38,187

-

40V

8.5A (Ta)

15.3mOhm @ 8.5A, 10V

2.5V @ 1mA

51nC @ 10V

2870pF @ 20V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FF4MR12KM1HP

Infineon Technologies

MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

SMC6280P

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

NP29N06QUK-E1-AY

Renesas Electronics Corporation

MOSFET 2N-CH 60V 30A 8HSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Power - Max: 1W (Ta), 44W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-HSON (5x5.4)

封裝: -

庫存7,500

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60V

30A (Tc)

21mOhm @ 15A, 10V

4V @ 250µA

30nC @ 10V

1500pF @ 25V

1W (Ta), 44W (Tc)

175°C

Surface Mount

8-PowerLDFN

8-HSON (5x5.4)

DMT3006LDV-7

Diodes Incorporated

MOSFET 2N-CH 30V 25A POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1155pF @ 15V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封裝: -

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30V

25A (Tc)

10mOhm @ 9A, 10V

3V @ 250µA

16.7nC @ 10V

1155pF @ 15V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

FW340-TL-E-ON

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

MCB20P1200LB-TUB

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

封裝: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

IRF7503TR

Infineon Technologies

MOSFET 2N-CH 30V 2.4A MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

封裝: -

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Logic Level Gate

30V

2.4A

135mOhm @ 1.7A, 10V

1V @ 250µA

12nC @ 10V

210pF @ 25V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

DMN15M3UCA6-7

Diodes Incorporated

MOSFET 2N-CH 14V X3-DSN2718-6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 14V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN2718-6

封裝: -

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-

14V

16.5A (Ta)

5.8mOhm @ 3A, 4.5V

1.3V @ 1mA

35.2nC @ 4.5V

2360pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN2718-6

DMN16M8UCA6-7

Diodes Incorporated

MOSFET 2N-CH 12V X3-DSN2718-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45.4nC @ 6V
Input Capacitance (Ciss) (Max) @ Vds: 2333pF @ 6V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN2718-6

封裝: -

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-

12V

15.5A (Ta)

5.6mOhm @ 3A, 4.5V

1.3V @ 1mA

45.4nC @ 6V

2333pF @ 6V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN2718-6

MSCSM170AM058CT6AG

Microchip Technology

SIC 2N-CH 1700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
Power - Max: 1.642kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存3

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1700V (1.7kV)

353A (Tc)

7.5mOhm @ 180A, 20V

3.3V @ 15mA

1068nC @ 20V

19800pF @ 1000V

1.642kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

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