頁 79 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRFHE4250DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 86A/303A PQFN FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 86A, 303A Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 27A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V Power - Max: 156W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 32-PowerWFQFN Supplier Device Package: 32-PQFN (6x6)	封裝: 32-PowerWFQFN	庫存4,400	Logic Level Gate	25V	86A, 303A	2.75 mOhm @ 27A, 10V	2.1V @ 35µA	20nC @ 4.5V	1735pF @ 13V	156W	-55°C ~ 150°C (TJ)	Surface Mount	32-PowerWFQFN	32-PQFN (6x6)
APTC60DDAM45CT1G	Microsemi Corporation	MOSFET 2N-CH 600V 49A SP1 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 49A Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1	封裝: SP1	庫存2,096	Standard	600V	49A	45 mOhm @ 24.5A, 10V	3.9V @ 3mA	150nC @ 10V	7200pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP1	SP1
APTM10DHM09T3G	Microsemi Corporation	MOSFET 2N-CH 100V 139A SP3 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 139A Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封裝: SP3	庫存7,984	Standard	100V	139A	10 mOhm @ 69.5A, 10V	4V @ 2.5mA	350nC @ 10V	9875pF @ 25V	390W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
NVMD6N03R2G	ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Power - Max: 1.29W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,472	Logic Level Gate	30V	6A	32 mOhm @ 6A, 10V	2.5V @ 250µA	30nC @ 10V	950pF @ 24V	1.29W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI4973DY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 30V 5.8A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存6,352	Logic Level Gate	30V	5.8A	23 mOhm @ 7.6A, 10V	3V @ 250µA	56nC @ 10V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
AO4619	Alpha & Omega Semiconductor Inc.	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.4A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存302,916	Logic Level Gate	30V	-	24 mOhm @ 7.4A, 10V	2.6V @ 250µA	7.2nC @ 10V	448pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI5509DC-T1-E3	Vishay Siliconix	MOSFET N/P-CH 20V 6.1A 1206-8 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V Power - Max: 4.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	封裝: 8-SMD, Flat Lead	庫存13,512	Logic Level Gate	20V	6.1A, 4.8A	52 mOhm @ 5A, 4.5V	2V @ 250µA	6.6nC @ 5V	455pF @ 10V	4.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI4974DY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 6A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存466,512	Logic Level Gate	30V	6A, 4.4A	19 mOhm @ 8A, 10V	3V @ 250µA	11nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTHD4401PT1	ON Semiconductor	MOSFET 2P-CH 20V 2.1A CHIPFET FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: ChipFET?	封裝: 8-SMD, Flat Lead	庫存2,000	Logic Level Gate	20V	2.1A	155 mOhm @ 2.1A, 4.5V	1.2V @ 250µA	6nC @ 4.5V	300pF @ 10V	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	ChipFET?
PMWD20XN,118	NXP	MOSFET 2N-CH 20V 10.4A 8TSSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.4A Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.2A, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 16V Power - Max: 4.2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存3,552	Logic Level Gate	20V	10.4A	22 mOhm @ 4.2A, 10V	1.5V @ 1mA	11.6nC @ 4.5V	740pF @ 16V	4.2W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
APTC60HM70BT3G	Microsemi Corporation	MOSFET 4N-CH 600V 39A SP3 FET Type: 4 N-Channel (H-Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3	封裝: SP3	庫存4,304	Logic Level Gate	600V	39A	70 mOhm @ 39A, 10V	3.9V @ 2.7mA	259nC @ 10V	700pF @ 25V	250W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
SP8J1FU6TB	Rohm Semiconductor	MOSFET 2P-CH 30V 5A 8SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,280	Logic Level Gate	30V	5A	42 mOhm @ 5A, 10V	2.5V @ 1mA	16nC @ 5V	1400pF @ 10V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PMDPB95XNE2X	Nexperia USA Inc.	MOSFET ARRAY 2NCH 30V DFN2020-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 99 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V Power - Max: 510mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	封裝: 6-UDFN Exposed Pad	庫存4,880	Standard	30V	2.7A (Ta)	99 mOhm @ 2.8A, 4.5V	1.25V @ 250µA	4.5nC @ 4.5V	258pF @ 15V	510mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	6-HUSON (2x2)
DMP2066LSD-13	Diodes Incorporated	MOSFET 2P-CH 20V 5.8A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.8A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存42,012	Logic Level Gate	20V	5.8A	40 mOhm @ 4.6A, 4.5V	1.2V @ 250µA	10.1nC @ 4.5V	820pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FC6946010R	Panasonic Electronic Components	MOSFET 2N-CH 60V 0.1A SSMINI6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power - Max: 125mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F3-B	封裝: SOT-563, SOT-666	庫存302,994	Logic Level Gate	60V	100mA	12 Ohm @ 10mA, 4V	1.5V @ 1µA	-	12pF @ 3V	125mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	SSMini6-F3-B
PJX8601_R1_00001	Panjit International Inc.	MOSFET N/P-CH 20V 0.5A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	庫存10,878	-	20V	500mA (Ta)	400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V	900mV @ 250µA, 1V @ 250µA	1.4nC @ 4.5V	67pF @ 10V, 38pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
MCQD08P06YA-TP	Micro Commercial Co	MOSFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V Power - Max: 1.6W (Tj) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	-	60V	8A (Ta)	75mOhm @ 4.3A, 10V	2.5V @ 250µA	10nC @ 10V	500pF @ 30V	1.6W (Tj)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SI4511DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 7.2A 8-SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: -	Request a Quote	Logic Level Gate	20V	7.2A, 4.6A	14.5mOhm @ 9.6A, 10V	1.8V @ 250µA	18nC @ 4.5V	-	1.1W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DMN2710UV-7	Diodes Incorporated	MOSFET 2N-CH 20V 0.92A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 920mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V Power - Max: 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	庫存4,629	-	20V	920mA (Ta)	450mOhm @ 600mA, 4.5V	1V @ 250µA	0.6nC @ 4.5V	42pF @ 16V	500mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
SIS932EDN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6A PPAK 1212 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power - Max: 2.6W (Ta), 23W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Dual Supplier Device Package: PowerPAK® 1212-8 Dual	封裝: -	庫存8,529	-	30V	6A (Tc)	22mOhm @ 10A, 4.5V	1.4V @ 250µA	14nC @ 4.5V	1000pF @ 15V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
FW256-TL-E-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
DMN6066SSDQ-13	Diodes Incorporated	MOSFET 2N-CH 60V 3.3A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Power - Max: 1.25W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	Request a Quote	-	60V	3.3A (Ta)	66mOhm @ 4.5A, 10V	3V @ 250µA	10.3nC @ 10V	502pF @ 30V	1.25W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
PJQ5846_R2_00001	Panjit International Inc.	MOSFET 2N-CH 40V 9.5A/40A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V Power - Max: 1.7W (Ta), 32W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: DFN5060B-8	封裝: -	Request a Quote	-	40V	9.5A (Ta), 40A (Tc)	10.5mOhm @ 8A, 10V	2.5V @ 250µA	22nC @ 10V	1258pF @ 25V	1.7W (Ta), 32W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	DFN5060B-8
SSM6N16FE-L3F	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.1A ES6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V Power - Max: 150mW (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存23,130	-	20V	100mA (Ta)	3Ohm @ 10mA, 4V	1.1V @ 100µA	-	9.3pF @ 3V	150mW (Ta)	150°C	Surface Mount	SOT-563, SOT-666	ES6
DMC3732UVT-7	Diodes Incorporated	MOSFET BVDSS: 25V~30V TSOT26 T&R FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V Power - Max: 540mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封裝: -	Request a Quote	-	30V	1.1A (Ta), 700mA (Ta)	460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V	0.95V @ 250µA, 1.1V @ 250µA	0.9nC @ 4.5V, 1.6nC @ 8V	40.8pF @ 25V, 54pF @ 15V	540mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
CAB008A12GM3	Wolfspeed, Inc.	SIC 2N-CH 1200V 182A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 182A (Tj) Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V Vgs(th) (Max) @ Id: 3.6V @ 46mA Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存132	-	1200V (1.2kV)	182A (Tj)	10.4mOhm @ 150A, 15V	3.6V @ 46mA	472nC @ 15V	13600pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
MSCSM170DUM039AG	Microchip Technology	SIC 2N-CH 1700V 523A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 523A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V Vgs(th) (Max) @ Id: 3.3V @ 22.5mA Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V Power - Max: 2400W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	庫存9	-	1700V (1.7kV)	523A (Tc)	5mOhm @ 270A, 20V	3.3V @ 22.5mA	1602nC @ 20V	29700pF @ 1000V	2400W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
MMFTP6312D	Diotec Semiconductor	MOSFET SOT26 P -20V 0.115OHM FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: SOT-26	封裝: -	Request a Quote	-	-	2.3A	-	-	-	-	-	-	Surface Mount	-	SOT-26

IRFHE4250DTRPBF

Infineon Technologies

MOSFET 2N-CH 25V 86A/303A PQFN

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 86A, 303A
Rds On (Max) @ Id, Vgs: 2.75 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1735pF @ 13V
Power - Max: 156W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 32-PowerWFQFN
Supplier Device Package: 32-PQFN (6x6)

封裝: 32-PowerWFQFN

庫存4,400

Logic Level Gate

25V

86A, 303A

2.75 mOhm @ 27A, 10V

2.1V @ 35µA

20nC @ 4.5V

1735pF @ 13V

156W

-55°C ~ 150°C (TJ)

Surface Mount

32-PowerWFQFN

32-PQFN (6x6)

APTC60DDAM45CT1G

Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1

封裝: SP1

庫存2,096

Standard

600V

49A

45 mOhm @ 24.5A, 10V

3.9V @ 3mA

150nC @ 10V

7200pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP1

APTM10DHM09T3G

Microsemi Corporation

MOSFET 2N-CH 100V 139A SP3

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封裝: SP3

庫存7,984

Standard

100V

139A

10 mOhm @ 69.5A, 10V

4V @ 2.5mA

350nC @ 10V

9875pF @ 25V

390W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

NVMD6N03R2G

ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Power - Max: 1.29W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,472

Logic Level Gate

30V

6A

32 mOhm @ 6A, 10V

2.5V @ 250µA

30nC @ 10V

950pF @ 24V

1.29W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI4973DY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 5.8A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存6,352

Logic Level Gate

30V

5.8A

23 mOhm @ 7.6A, 10V

3V @ 250µA

56nC @ 10V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

AO4619

Alpha & Omega Semiconductor Inc.

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 448pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存302,916

Logic Level Gate

30V

-

24 mOhm @ 7.4A, 10V

2.6V @ 250µA

7.2nC @ 10V

448pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SI5509DC-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 6.1A 1206-8

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 4.8A
Rds On (Max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 10V
Power - Max: 4.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

封裝: 8-SMD, Flat Lead

庫存13,512

Logic Level Gate

20V

6.1A, 4.8A

52 mOhm @ 5A, 4.5V

2V @ 250µA

6.6nC @ 5V

455pF @ 10V

4.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI4974DY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 6A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存466,512

Logic Level Gate

30V

6A, 4.4A

19 mOhm @ 8A, 10V

3V @ 250µA

11nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTHD4401PT1

ON Semiconductor

MOSFET 2P-CH 20V 2.1A CHIPFET

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Rds On (Max) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: ChipFET?

封裝: 8-SMD, Flat Lead

庫存2,000

Logic Level Gate

20V

2.1A

155 mOhm @ 2.1A, 4.5V

1.2V @ 250µA

6nC @ 4.5V

300pF @ 10V

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

ChipFET?

PMWD20XN,118

NXP

MOSFET 2N-CH 20V 10.4A 8TSSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10.4A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 16V
Power - Max: 4.2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存3,552

Logic Level Gate

20V

10.4A

22 mOhm @ 4.2A, 10V

1.5V @ 1mA

11.6nC @ 4.5V

740pF @ 16V

4.2W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

APTC60HM70BT3G

Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3

FET Type: 4 N-Channel (H-Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3

封裝: SP3

庫存4,304

Logic Level Gate

600V

39A

70 mOhm @ 39A, 10V

3.9V @ 2.7mA

259nC @ 10V

700pF @ 25V

250W

-40°C ~ 150°C (TJ)

Chassis Mount

SP3

SP8J1FU6TB

Rohm Semiconductor

MOSFET 2P-CH 30V 5A 8SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,280

Logic Level Gate

30V

5A

42 mOhm @ 5A, 10V

2.5V @ 1mA

16nC @ 5V

1400pF @ 10V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PMDPB95XNE2X

Nexperia USA Inc.

MOSFET ARRAY 2NCH 30V DFN2020-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 99 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V
Power - Max: 510mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: 6-HUSON (2x2)

封裝: 6-UDFN Exposed Pad

庫存4,880

Standard

30V

2.7A (Ta)

99 mOhm @ 2.8A, 4.5V

1.25V @ 250µA

4.5nC @ 4.5V

258pF @ 15V

510mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

6-HUSON (2x2)

DMP2066LSD-13

Diodes Incorporated

MOSFET 2P-CH 20V 5.8A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.8A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存42,012

Logic Level Gate

20V

5.8A

40 mOhm @ 4.6A, 4.5V

1.2V @ 250µA

10.1nC @ 4.5V

820pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FC6946010R

Panasonic Electronic Components

MOSFET 2N-CH 60V 0.1A SSMINI6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V
Power - Max: 125mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F3-B

封裝: SOT-563, SOT-666

庫存302,994

Logic Level Gate

60V

100mA

12 Ohm @ 10mA, 4V

1.5V @ 1µA

-

12pF @ 3V

125mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

SSMini6-F3-B

PJX8601_R1_00001

Panjit International Inc.

MOSFET N/P-CH 20V 0.5A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

庫存10,878

-

20V

500mA (Ta)

400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V

900mV @ 250µA, 1V @ 250µA

1.4nC @ 4.5V

67pF @ 10V, 38pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

MCQD08P06YA-TP

Micro Commercial Co

MOSFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Power - Max: 1.6W (Tj)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

Request a Quote

-

60V

8A (Ta)

75mOhm @ 4.3A, 10V

2.5V @ 250µA

10nC @ 10V

500pF @ 30V

1.6W (Tj)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SI4511DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 7.2A 8-SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: -

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Logic Level Gate

20V

7.2A, 4.6A

14.5mOhm @ 9.6A, 10V

1.8V @ 250µA

18nC @ 4.5V

-

1.1W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DMN2710UV-7

Diodes Incorporated

MOSFET 2N-CH 20V 0.92A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Power - Max: 500mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

庫存4,629

-

20V

920mA (Ta)

450mOhm @ 600mA, 4.5V

1V @ 250µA

0.6nC @ 4.5V

42pF @ 16V

500mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

SIS932EDN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK 1212

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Power - Max: 2.6W (Ta), 23W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual

封裝: -

庫存8,529

-

30V

6A (Tc)

22mOhm @ 10A, 4.5V

1.4V @ 250µA

14nC @ 4.5V

1000pF @ 15V

2.6W (Ta), 23W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK® 1212-8 Dual

FW256-TL-E-ON

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

DMN6066SSDQ-13

Diodes Incorporated

MOSFET 2N-CH 60V 3.3A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Power - Max: 1.25W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

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-

60V

3.3A (Ta)

66mOhm @ 4.5A, 10V

3V @ 250µA

10.3nC @ 10V

502pF @ 30V

1.25W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

PJQ5846_R2_00001

Panjit International Inc.

MOSFET 2N-CH 40V 9.5A/40A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1258pF @ 25V
Power - Max: 1.7W (Ta), 32W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: DFN5060B-8

封裝: -

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-

40V

9.5A (Ta), 40A (Tc)

10.5mOhm @ 8A, 10V

2.5V @ 250µA

22nC @ 10V

1258pF @ 25V

1.7W (Ta), 32W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

DFN5060B-8

SSM6N16FE-L3F

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.1A ES6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 9.3pF @ 3V
Power - Max: 150mW (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存23,130

-

20V

100mA (Ta)

3Ohm @ 10mA, 4V

1.1V @ 100µA

-

9.3pF @ 3V

150mW (Ta)

150°C

Surface Mount

SOT-563, SOT-666

ES6

DMC3732UVT-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V TSOT26 T&R

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 700mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V
Vgs(th) (Max) @ Id: 0.95V @ 250µA, 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, 1.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 40.8pF @ 25V, 54pF @ 15V
Power - Max: 540mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封裝: -

Request a Quote

-

30V

1.1A (Ta), 700mA (Ta)

460mOhm @ 200mA, 4.5V, 1Ohm @ 400mA, 4.5V

0.95V @ 250µA, 1.1V @ 250µA

0.9nC @ 4.5V, 1.6nC @ 8V

40.8pF @ 25V, 54pF @ 15V

540mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

CAB008A12GM3

Wolfspeed, Inc.

SIC 2N-CH 1200V 182A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 182A (Tj)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 150A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 46mA
Gate Charge (Qg) (Max) @ Vgs: 472nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存132

-

1200V (1.2kV)

182A (Tj)

10.4mOhm @ 150A, 15V

3.6V @ 46mA

472nC @ 15V

13600pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

MSCSM170DUM039AG

Microchip Technology

SIC 2N-CH 1700V 523A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 523A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 22.5mA
Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V
Power - Max: 2400W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

庫存9

-

1700V (1.7kV)

523A (Tc)

5mOhm @ 270A, 20V

3.3V @ 22.5mA

1602nC @ 20V

29700pF @ 1000V

2400W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

MMFTP6312D

Diotec Semiconductor

MOSFET SOT26 P -20V 0.115OHM

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: SOT-26

封裝: -

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-

2.3A

-

Surface Mount

-

SOT-26