頁 83 - 電晶體 - FET、MOSFET - 陣列 | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BSL214NL6327HTSA1	Infineon Technologies	MOSFET 2N-CH 20V 1.5A 6TSOP FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: PG-TSOP6-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存2,480	Logic Level Gate	20V	1.5A	140 mOhm @ 1.5A, 4.5V	1.2V @ 3.7µA	0.8nC @ 5V	143pF @ 10V	500mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	PG-TSOP6-6
AO4822_101	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 30V 8A FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,352	Standard	30V	8A	19 mOhm @ 8A, 10V	2.4V @ 250µA	18nC @ 10V	888pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI3586DV-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 20V 2.9A 6-TSOP FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-TSOP	封裝: SOT-23-6 Thin, TSOT-23-6	庫存1,327,392	Logic Level Gate	20V	2.9A, 2.1A	60 mOhm @ 3.4A, 4.5V	1.1V @ 250µA	6nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-TSOP
NTLJD3115PTAG	ON Semiconductor	MOSFET 2P-CH 20V 2.3A 6-WDFN FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Power - Max: 710mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFN (2x2)	封裝: 6-WDFN Exposed Pad	庫存2,144	Logic Level Gate	20V	2.3A	100 mOhm @ 2A, 4.5V	1V @ 250µA	6.2nC @ 4.5V	531pF @ 10V	710mW	-55°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	6-WDFN (2x2)
NTMD6N03R2	ON Semiconductor	MOSFET 2N-CH 30V 6A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V Power - Max: 1.29W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存582,492	Logic Level Gate	30V	6A	32 mOhm @ 6A, 10V	2.5V @ 250µA	30nC @ 10V	950pF @ 24V	1.29W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SP8K22FU6TB	Rohm Semiconductor	MOSFET 2N-CH 45V 4.5A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存226,836	Logic Level Gate	45V	4.5A	46 mOhm @ 4.5A, 10V	2.5V @ 1mA	9.6nC @ 5V	550pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
FDMS3686S	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V 13A/23A 8-PQFN FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 23A Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56	封裝: 8-PowerTDFN	庫存6,656	Logic Level Gate	30V	13A, 23A	8 mOhm @ 13A, 10V	2.7V @ 250µA	29nC @ 10V	1785pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	Power56
CSD87350Q5D	Texas Instruments	MOSFET 2N-CH 30V 40A 8LSON FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 15V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-LSON (5x6)	封裝: 8-PowerLDFN	庫存620,472	Logic Level Gate	30V	40A	5.9 mOhm @ 20A, 8V	2.1V @ 250µA	10.9nC @ 4.5V	1770pF @ 15V	12W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	8-LSON (5x6)
ALD310708PCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 780mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封裝: 16-DIP (0.300", 7.62mm)	庫存6,336	Standard	8V	-	-	780mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SH8K4TB1	Rohm Semiconductor	MOSFET 2N-CH 30V 9A SOP8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存66,132	Logic Level Gate	30V	9A	17 mOhm @ 9A, 10V	2.5V @ 1mA	21nC @ 5V	1190pF @ 10V	2W	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
SSM6P35FE(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2P-CH 20V 0.1A ES6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封裝: SOT-563, SOT-666	庫存32,976	Logic Level Gate	20V	100mA	8 Ohm @ 50mA, 4V	1V @ 1mA	-	12.2pF @ 3V	150mW	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6 (1.6x1.6)
DMC2004VK-7	Diodes Incorporated	MOSFET N/P-CH 20V SOT-563 FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Power - Max: 450mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: SOT-563, SOT-666	庫存447,756	Logic Level Gate	20V	670mA, 530mA	550 mOhm @ 540mA, 4.5V	1V @ 250µA	-	150pF @ 16V	450mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDC6306P	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 1.9A SSOT6 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.9A Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V Power - Max: 700mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: SuperSOT?-6	封裝: SOT-23-6 Thin, TSOT-23-6	庫存515,952	Logic Level Gate	20V	1.9A	170 mOhm @ 1.9A, 4.5V	1.5V @ 250µA	4.2nC @ 4.5V	441pF @ 10V	700mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	SuperSOT?-6
FDS9945	Fairchild/ON Semiconductor	MOSFET 2N-CH 60V 3.5A 8-SO FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V Power - Max: 1W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存807,192	Logic Level Gate	60V	3.5A	100 mOhm @ 3.5A, 10V	3V @ 250µA	13nC @ 5V	420pF @ 30V	1W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN3013LFG-13	Diodes Incorporated	MOSFET 2N-CH 30V 9.5A PWRDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V Power - Max: 2.16W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: PowerDI3333-8 (Type D)	封裝: -	Request a Quote	-	30V	9.5A (Ta), 15A (Tc)	14.3mOhm @ 4A, 8V	1.2V @ 250µA	5.7nC @ 4.5V	600pF @ 15V	2.16W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerLDFN	PowerDI3333-8 (Type D)
2N7002DWQ-13-F	Diodes Incorporated	MOSFET 2N-CH 60V 0.23A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Power - Max: 310mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	庫存30,000	-	60V	230mA (Ta)	7.5Ohm @ 50mA, 5V	2V @ 250µA	-	50pF @ 25V	310mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
FDMC0205	Fairchild Semiconductor	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GSFK06002	Good-Ark Semiconductor	MOSFET 2N-CH 50V 0.3A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 580nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V Power - Max: 900mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: -	庫存17,334	-	50V	300mA (Ta)	2Ohm @ 300mA, 10V	1.4V @ 250µA	580nC @ 4.5V	12pF @ 30V	900mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
MCS8804-TP	Micro Commercial Co	MOSFET 2N-CH 20V 8A 8TSSOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: -	Request a Quote	-	20V	8A	13mOhm @ 8A, 10V	1V @ 250µA	17.9nC @ 4.5V	1800pF @ 10V	-	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
TSM8588CS-RLG	Taiwan Semiconductor Corporation	MOSFET N/P-CH 60V 2.5A/5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 30V, 436pF @ 30V Power - Max: 1.4W (Ta), 5.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封裝: -	庫存13,932	-	60V	2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)	103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V	2.5V @ 250µA	9.4nC @ 10V, 9nC @ 10V	527pF @ 30V, 436pF @ 30V	1.4W (Ta), 5.7W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NTMFD5C672NLT1G	onsemi	T6 60V LL S08FL DS FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V Power - Max: 3.1W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)	封裝: -	庫存4,500	-	60V	12A (Ta), 49A (Tc)	11.9mOhm @ 10A, 10V	2.2V @ 30µA	12.3nC @ 10V	793pF @ 25V	3.1W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerTDFN	8-DFN (5x6) Dual Flag (SO8FL-Dual)
CMLDM8005-TR-PBFREE	Central Semiconductor Corp	MOSFET 2P-CH 20V 0.65A SOT563 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 650mA Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V Power - Max: 350mW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封裝: -	庫存19,068	Logic Level Gate	20V	650mA	360mOhm @ 350mA, 4.5V	1V @ 250µA	1.2nC @ 4.5V	100pF @ 16V	350mW	-65°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SOT-563
FDMA1023PZ-F106	onsemi	MOSFET 2P-CH 20V 3.7A 6MICROFET FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-MicroFET (2x2)	封裝: -	Request a Quote	-	20V	3.7A (Ta)	72mOhm @ 3.7A, 4.5V	1V @ 250µA	12nC @ 4.5V	655pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-MicroFET (2x2)
CAB006M12GM3T	Wolfspeed, Inc.	SIC 2N-CH 1200V 200A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Vgs(th) (Max) @ Id: 3.6V @ 69mA Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	Request a Quote	-	1200V (1.2kV)	200A (Tj)	6.9mOhm @ 200A, 15V	3.6V @ 69mA	708nC @ 15V	20400pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	Module
MSCSM70HM038CAG	Microchip Technology	SIC MOSFET FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SSM6L820R-LF	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V/20V 4A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V Power - Max: 1.4W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	封裝: -	庫存17,625	-	30V, 20V	4A (Ta)	39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V	1V @ 1mA, 1.2V @ 1mA	3.2nC @ 4.5V, 6.7nC @ 4.5V	310pF @ 15V, 480pF @ 10V	1.4W (Ta)	150°C	Surface Mount	6-SMD, Flat Leads	6-TSOP-F
NXH010P120MNF1PTG	onsemi	SIC 2N-CH 1200V 114A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 114A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4.3V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V Power - Max: 250W (Tj) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封裝: -	Request a Quote	-	1200V (1.2kV)	114A (Tc)	14mOhm @ 100A, 20V	4.3V @ 40mA	454nC @ 20V	4707pF @ 800V	250W (Tj)	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
STD1056T4-ON	onsemi	MOSFET N-CH FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

BSL214NL6327HTSA1

Infineon Technologies

MOSFET 2N-CH 20V 1.5A 6TSOP

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: PG-TSOP6-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存2,480

Logic Level Gate

20V

1.5A

140 mOhm @ 1.5A, 4.5V

1.2V @ 3.7µA

0.8nC @ 5V

143pF @ 10V

500mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

PG-TSOP6-6

AO4822_101

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,352

Standard

30V

8A

19 mOhm @ 8A, 10V

2.4V @ 250µA

18nC @ 10V

888pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI3586DV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 20V 2.9A 6-TSOP

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.1A
Rds On (Max) @ Id, Vgs: 60 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-TSOP

封裝: SOT-23-6 Thin, TSOT-23-6

庫存1,327,392

Logic Level Gate

20V

2.9A, 2.1A

60 mOhm @ 3.4A, 4.5V

1.1V @ 250µA

6nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-TSOP

NTLJD3115PTAG

ON Semiconductor

MOSFET 2P-CH 20V 2.3A 6-WDFN

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Power - Max: 710mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFN (2x2)

封裝: 6-WDFN Exposed Pad

庫存2,144

Logic Level Gate

20V

2.3A

100 mOhm @ 2A, 4.5V

1V @ 250µA

6.2nC @ 4.5V

531pF @ 10V

710mW

-55°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

6-WDFN (2x2)

NTMD6N03R2

ON Semiconductor

MOSFET 2N-CH 30V 6A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 24V
Power - Max: 1.29W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存582,492

Logic Level Gate

30V

6A

32 mOhm @ 6A, 10V

2.5V @ 250µA

30nC @ 10V

950pF @ 24V

1.29W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SP8K22FU6TB

Rohm Semiconductor

MOSFET 2N-CH 45V 4.5A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存226,836

Logic Level Gate

45V

4.5A

46 mOhm @ 4.5A, 10V

2.5V @ 1mA

9.6nC @ 5V

550pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

FDMS3686S

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 13A/23A 8-PQFN

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Rds On (Max) @ Id, Vgs: 8 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56

封裝: 8-PowerTDFN

庫存6,656

Logic Level Gate

30V

13A, 23A

8 mOhm @ 13A, 10V

2.7V @ 250µA

29nC @ 10V

1785pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

Power56

CSD87350Q5D

Texas Instruments

MOSFET 2N-CH 30V 40A 8LSON

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 20A, 8V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 15V
Power - Max: 12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-LSON (5x6)

封裝: 8-PowerLDFN

庫存620,472

Logic Level Gate

30V

40A

5.9 mOhm @ 20A, 8V

2.1V @ 250µA

10.9nC @ 4.5V

1770pF @ 15V

12W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

8-LSON (5x6)

ALD310708PCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 780mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封裝: 16-DIP (0.300", 7.62mm)

庫存6,336

Standard

8V

-

780mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SH8K4TB1

Rohm Semiconductor

MOSFET 2N-CH 30V 9A SOP8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存66,132

Logic Level Gate

30V

9A

17 mOhm @ 9A, 10V

2.5V @ 1mA

21nC @ 5V

1190pF @ 10V

2W

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

SSM6P35FE(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2P-CH 20V 0.1A ES6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 12.2pF @ 3V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

封裝: SOT-563, SOT-666

庫存32,976

Logic Level Gate

20V

100mA

8 Ohm @ 50mA, 4V

1V @ 1mA

-

12.2pF @ 3V

150mW

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6 (1.6x1.6)

DMC2004VK-7

Diodes Incorporated

MOSFET N/P-CH 20V SOT-563

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 670mA, 530mA
Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Power - Max: 450mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: SOT-563, SOT-666

庫存447,756

Logic Level Gate

20V

670mA, 530mA

550 mOhm @ 540mA, 4.5V

1V @ 250µA

-

150pF @ 16V

450mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDC6306P

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 1.9A SSOT6

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.9A
Rds On (Max) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 441pF @ 10V
Power - Max: 700mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT?-6

封裝: SOT-23-6 Thin, TSOT-23-6

庫存515,952

Logic Level Gate

20V

1.9A

170 mOhm @ 1.9A, 4.5V

1.5V @ 250µA

4.2nC @ 4.5V

441pF @ 10V

700mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

SuperSOT?-6

FDS9945

Fairchild/ON Semiconductor

MOSFET 2N-CH 60V 3.5A 8-SO

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 30V
Power - Max: 1W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存807,192

Logic Level Gate

60V

3.5A

100 mOhm @ 3.5A, 10V

3V @ 250µA

13nC @ 5V

420pF @ 30V

1W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN3013LFG-13

Diodes Incorporated

MOSFET 2N-CH 30V 9.5A PWRDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V
Power - Max: 2.16W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: PowerDI3333-8 (Type D)

封裝: -

Request a Quote

-

30V

9.5A (Ta), 15A (Tc)

14.3mOhm @ 4A, 8V

1.2V @ 250µA

5.7nC @ 4.5V

600pF @ 15V

2.16W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerLDFN

PowerDI3333-8 (Type D)

2N7002DWQ-13-F

Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power - Max: 310mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

庫存30,000

-

60V

230mA (Ta)

7.5Ohm @ 50mA, 5V

2V @ 250µA

-

50pF @ 25V

310mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

FDMC0205

Fairchild Semiconductor

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

GSFK06002

Good-Ark Semiconductor

MOSFET 2N-CH 50V 0.3A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 580nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 30V
Power - Max: 900mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: -

庫存17,334

-

50V

300mA (Ta)

2Ohm @ 300mA, 10V

1.4V @ 250µA

580nC @ 4.5V

12pF @ 30V

900mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

MCS8804-TP

Micro Commercial Co

MOSFET 2N-CH 20V 8A 8TSSOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 13mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: -

Request a Quote

-

20V

8A

13mOhm @ 8A, 10V

1V @ 250µA

17.9nC @ 4.5V

1800pF @ 10V

-

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

TSM8588CS-RLG

Taiwan Semiconductor Corporation

MOSFET N/P-CH 60V 2.5A/5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 30V, 436pF @ 30V
Power - Max: 1.4W (Ta), 5.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封裝: -

庫存13,932

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60V

2.5A (Ta), 5A (Tc), 2A (Ta), 4A (Tc)

103mOhm @ 2.5A, 10V, 180mOhm @ 2A, 10V

2.5V @ 250µA

9.4nC @ 10V, 9nC @ 10V

527pF @ 30V, 436pF @ 30V

1.4W (Ta), 5.7W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NTMFD5C672NLT1G

onsemi

T6 60V LL S08FL DS

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
Power - Max: 3.1W (Ta), 45W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)

封裝: -

庫存4,500

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60V

12A (Ta), 49A (Tc)

11.9mOhm @ 10A, 10V

2.2V @ 30µA

12.3nC @ 10V

793pF @ 25V

3.1W (Ta), 45W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerTDFN

8-DFN (5x6) Dual Flag (SO8FL-Dual)

CMLDM8005-TR-PBFREE

Central Semiconductor Corp

MOSFET 2P-CH 20V 0.65A SOT563

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V
Power - Max: 350mW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封裝: -

庫存19,068

Logic Level Gate

20V

650mA

360mOhm @ 350mA, 4.5V

1V @ 250µA

1.2nC @ 4.5V

100pF @ 16V

350mW

-65°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SOT-563

FDMA1023PZ-F106

onsemi

MOSFET 2P-CH 20V 3.7A 6MICROFET

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 655pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-MicroFET (2x2)

封裝: -

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-

20V

3.7A (Ta)

72mOhm @ 3.7A, 4.5V

1V @ 250µA

12nC @ 4.5V

655pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-MicroFET (2x2)

CAB006M12GM3T

Wolfspeed, Inc.

SIC 2N-CH 1200V 200A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 69mA
Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

Request a Quote

-

1200V (1.2kV)

200A (Tj)

6.9mOhm @ 200A, 15V

3.6V @ 69mA

708nC @ 15V

20400pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

MSCSM70HM038CAG

Microchip Technology

SIC MOSFET

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

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-

SSM6L820R-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

封裝: -

庫存17,625

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30V, 20V

4A (Ta)

39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V

1V @ 1mA, 1.2V @ 1mA

3.2nC @ 4.5V, 6.7nC @ 4.5V

310pF @ 15V, 480pF @ 10V

1.4W (Ta)

150°C

Surface Mount

6-SMD, Flat Leads

6-TSOP-F

NXH010P120MNF1PTG

onsemi

SIC 2N-CH 1200V 114A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4.3V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
Power - Max: 250W (Tj)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封裝: -

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-

1200V (1.2kV)

114A (Tc)

14mOhm @ 100A, 20V

4.3V @ 40mA

454nC @ 20V

4707pF @ 800V

250W (Tj)

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

STD1056T4-ON

onsemi

MOSFET N-CH

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-