頁 24 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFP 520F E6327	Infineon Technologies	TRANSISTOR RF NPN 2.5V TSFP-4 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 3.5V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Gain: 22.5dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Current - Collector (Ic) (Max): 40mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-TSFP	封裝: 4-SMD, Flat Leads	庫存2,480	3.5V	45GHz	0.95dB @ 1.8GHz	22.5dB	100mW	70 @ 20mA, 2V	40mA	150°C (TJ)	Surface Mount	4-SMD, Flat Leads	4-TSFP
BFS17WE6327HTSA1	Infineon Technologies	TRANSISTOR NPN RF 15V SOT-323 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Gain: - Power - Max: 280mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Current - Collector (Ic) (Max): 25mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存7,856	15V	1.4GHz	3.5dB ~ 5dB @ 800MHz	-	280mW	40 @ 2mA, 1V	25mA	150°C (TJ)	Surface Mount	SC-70, SOT-323	PG-SOT323-3
2N2857	Microsemi Corporation	TRANS RF BIPO NPN 15V 40MA TO72 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AF, TO-72-4 Metal Can Supplier Device Package: TO-72	封裝: TO-206AF, TO-72-4 Metal Can	庫存20,976	15V	500MHz	4.5dB @ 450MHz	12.5dB ~ 21dB @ 450MHz	200mW	30 @ 3mA, 1V	40mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AF, TO-72-4 Metal Can	TO-72
AT-41486-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 60MA 86-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz Gain: 9dB ~ 18dB Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V Current - Collector (Ic) (Max): 60mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-86 Supplier Device Package: 86 Plastic	封裝: SOT-86	庫存188,040	12V	8GHz	1.4dB ~ 3dB @ 1GHz ~ 4GHz	9dB ~ 18dB	500mW	30 @ 10mA, 8V	60mA	150°C (TJ)	Surface Mount	SOT-86	86 Plastic
BF240	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 40V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 1.1GHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存44,400	40V	1.1GHz	-	-	350mW	65 @ 1mA, 10V	50mA	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
UPA806T-T1-A	CEL	RF DUAL TRANSISTORS NPN SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 12GHz Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Gain: 8.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存534,720	6V	12GHz	1.5dB @ 2GHz	8.5dB	200mW	75 @ 10mA, 3V	30mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
NE85639R-T1-A	CEL	TRANSISTOR NPN 1GHZ SOT-143R Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz Gain: 13.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-143R Supplier Device Package: SOT-143R	封裝: SOT-143R	庫存3,584	12V	9GHz	1.5dB ~ 2.1dB @ 1GHz	13.5dB	200mW	50 @ 20mA, 10V	100mA	150°C (TJ)	Surface Mount	SOT-143R	SOT-143R
2N5770	Fairchild/ON Semiconductor	IC TRANS NPN SS RF 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存6,128,100	15V	-	6dB @ 60MHz	15dB	350mW	50 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BFM505,115	NXP	TRANS NPN DUAL 8V 9GHZ 6TSSOP Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz Gain: - Power - Max: 500mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Current - Collector (Ic) (Max): 18mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封裝: 6-TSSOP, SC-88, SOT-363	庫存7,536	8V	9GHz	1.1dB ~ 1.9dB @ 900MHz ~ 2GHz	-	500mW	60 @ 5mA, 6V	18mA	175°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
DME375A	Microsemi Corporation	TRANS RF BIPO 875W 30A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 1.025GHz ~ 1.15GHz Noise Figure (dB Typ @ f): - Gain: 6.5dB Power - Max: 875W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Current - Collector (Ic) (Max): 30A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封裝: 55AW	庫存3,776	55V	1.025GHz ~ 1.15GHz	-	6.5dB	875W	10 @ 300mA, 5V	30A	200°C (TJ)	Chassis Mount	55AW	55AW
UTV040	Microsemi Corporation	TRANS RF BIPO 25W 2.5A 55FT-7 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 470MHz ~ 860MHz Noise Figure (dB Typ @ f): - Gain: 9dB Power - Max: 25W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Current - Collector (Ic) (Max): 2.5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: 55FT Supplier Device Package: 55FT	封裝: 55FT	庫存6,112	25V	470MHz ~ 860MHz	-	9dB	25W	10 @ 500mA, 5V	2.5A	200°C (TJ)	Chassis, Stud Mount	55FT	55FT
AT-32063-TR2G	Broadcom Limited	TRANS NPN BIPO 5.5V 32MA SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz Gain: 12.5dB ~ 14.5dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V Current - Collector (Ic) (Max): 32mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封裝: 6-TSSOP, SC-88, SOT-363	庫存3,776	5.5V	-	1.1dB ~ 1.4dB @ 900MHz	12.5dB ~ 14.5dB	150mW	50 @ 5mA, 2.7V	32mA	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
AT-31011-TR1G	Broadcom Limited	TRANS NPN BIPO 5.5V 16MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: - Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz Gain: 11dB ~ 13dB Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V Current - Collector (Ic) (Max): 16mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存573,360	5.5V	-	0.9dB ~ 1.2dB @ 900MHz	11dB ~ 13dB	150mW	70 @ 1mA, 2.7V	16mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
BLT50,115	NXP	TRANS NPN 7.5V SOT223 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 470MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V Current - Collector (Ic) (Max): 500mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	封裝: TO-261-4, TO-261AA	庫存20,304	10V	470MHz	-	-	2W	25 @ 300mA, 5V	500mA	175°C (TJ)	Surface Mount	TO-261-4, TO-261AA	SOT-223
BFR 740L3RH E6327	Infineon Technologies	TRANS RF BIPO NPN 30MA TSLP-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 4.7V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz Gain: 24.5dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Current - Collector (Ic) (Max): 30mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3	封裝: SC-101, SOT-883	庫存7,312	4.7V	42GHz	0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz	24.5dB	160mW	160 @ 25mA, 3V	30mA	150°C (TJ)	Surface Mount	SC-101, SOT-883	PG-TSLP-3
CPH6003A-TL-E	ON Semiconductor	TRANS NPN BIPO 12V 150MA CPH6 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.8dB @ 1GHz Gain: 9dB Power - Max: 800mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: 6-CPH	封裝: SOT-23-6 Thin, TSOT-23-6	庫存2,752	12V	7GHz	1.8dB @ 1GHz	9dB	800mW	100 @ 50mA, 5V	150mA	150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	6-CPH
BFR 183 E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 17.5dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存24,168	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	17.5dB	450mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
BFP196WH6327XTSA1	Infineon Technologies	TRANS RF NPN 12V 150MA SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz Gain: 12.5dB ~ 19dB Power - Max: 700mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V Current - Collector (Ic) (Max): 150mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: PG-SOT343-4	封裝: SC-82A, SOT-343	庫存26,844	12V	7.5GHz	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz	12.5dB ~ 19dB	700mW	70 @ 50mA, 8V	150mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	PG-SOT343-4
NESG2030M04-T2-A	CEL	TRANS NPN 2GHZ SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 2.3V Frequency - Transition: 60GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz Gain: 16dB Power - Max: 80mW DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOT-343F Supplier Device Package: M04	封裝: -	Request a Quote	2.3V	60GHz	0.9dB ~ 1.1dB @ 2GHz	16dB	80mW	200 @ 5mA, 2V	35mA	-	Surface Mount	SOT-343F	M04
BFR181E6327HTSA1	Infineon Technologies	RF TRANS NPN 12V 8GHZ SOT23-3 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Gain: 18.5dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23	封裝: -	庫存15,813	12V	8GHz	0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz	18.5dB	175mW	70 @ 5mA, 8V	20mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23
90025HS	Microsemi Corporation	RF POWER TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NESG220034-T1-A	Renesas Electronics Corporation	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5.5V Frequency - Transition: 11.5GHz Noise Figure (dB Typ @ f): 0.9dB @ 1GHz Gain: 12dB Power - Max: 886mW DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI (SOT-89)	封裝: -	Request a Quote	5.5V	11.5GHz	0.9dB @ 1GHz	12dB	886mW	140 @ 10mA, 5V	200mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI (SOT-89)
NESG2021M16-T3-A	Renesas Electronics Corporation	RF SMALL SIGNAL TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz Gain: 10dB ~ 18dB Power - Max: 175mW DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V Current - Collector (Ic) (Max): 35mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: M16, 1208	封裝: -	Request a Quote	5V	25GHz	0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz	10dB ~ 18dB	175mW	130 @ 5mA, 2V	35mA	-	Surface Mount	6-SMD, Flat Leads	M16, 1208
MAPL-000817-012CPC	MACOM Technology Solutions	TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SMMBTH10LT1	onsemi	SMALL SIGNAL BIPOLAR TRANSISTOR Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 (TO-236)	封裝: -	Request a Quote	25V	-	-	-	225mW	60 @ 4mA, 10V	-	-55°C ~ 150°C	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
CP616-2N5160-CM	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 40V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	40V	500MHz	-	-	-	10 @ 50mA, 5V	400mA	-65°C ~ 150°C (TJ)	Surface Mount	Die	Die
BFR92PE6530HTSA1	Infineon Technologies	RF LOW-NOISE SI TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CP229-2N5109-CT	Central Semiconductor Corp	RF TRANSISTOR TO-39 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 1.2GHz Noise Figure (dB Typ @ f): 3dB @ 200MHz Gain: 11dB Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V Current - Collector (Ic) (Max): 400mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封裝: -	Request a Quote	20V	1.2GHz	3dB @ 200MHz	11dB	-	40 @ 50mA, 15V	400mA	-65°C ~ 200°C (TJ)	Surface Mount	Die	Die

BFP 520F E6327

Infineon Technologies

TRANSISTOR RF NPN 2.5V TSFP-4

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 3.5V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Gain: 22.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP

封裝: 4-SMD, Flat Leads

庫存2,480

3.5V

45GHz

0.95dB @ 1.8GHz

22.5dB

100mW

70 @ 20mA, 2V

40mA

150°C (TJ)

Surface Mount

4-SMD, Flat Leads

4-TSFP

BFS17WE6327HTSA1

Infineon Technologies

TRANSISTOR NPN RF 15V SOT-323

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Gain: -
Power - Max: 280mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存7,856

15V

1.4GHz

3.5dB ~ 5dB @ 800MHz

-

280mW

40 @ 2mA, 1V

25mA

150°C (TJ)

Surface Mount

SC-70, SOT-323

PG-SOT323-3

2N2857

Microsemi Corporation

TRANS RF BIPO NPN 15V 40MA TO72

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
Gain: 12.5dB ~ 21dB @ 450MHz
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
Current - Collector (Ic) (Max): 40mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Supplier Device Package: TO-72

封裝: TO-206AF, TO-72-4 Metal Can

庫存20,976

15V

500MHz

4.5dB @ 450MHz

12.5dB ~ 21dB @ 450MHz

200mW

30 @ 3mA, 1V

40mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AF, TO-72-4 Metal Can

TO-72

AT-41486-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 60MA 86-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 3dB @ 1GHz ~ 4GHz
Gain: 9dB ~ 18dB
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 8V
Current - Collector (Ic) (Max): 60mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-86
Supplier Device Package: 86 Plastic

封裝: SOT-86

庫存188,040

12V

8GHz

1.4dB ~ 3dB @ 1GHz ~ 4GHz

9dB ~ 18dB

500mW

30 @ 10mA, 8V

60mA

150°C (TJ)

Surface Mount

SOT-86

86 Plastic

BF240

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 40V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 1.1GHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存44,400

40V

1.1GHz

-

350mW

65 @ 1mA, 10V

50mA

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

UPA806T-T1-A

CEL

RF DUAL TRANSISTORS NPN SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 12GHz
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Gain: 8.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存534,720

6V

12GHz

1.5dB @ 2GHz

8.5dB

200mW

75 @ 10mA, 3V

30mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

NE85639R-T1-A

CEL

TRANSISTOR NPN 1GHZ SOT-143R

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.1dB @ 1GHz
Gain: 13.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-143R
Supplier Device Package: SOT-143R

封裝: SOT-143R

庫存3,584

12V

9GHz

1.5dB ~ 2.1dB @ 1GHz

13.5dB

200mW

50 @ 20mA, 10V

100mA

150°C (TJ)

Surface Mount

SOT-143R

2N5770

Fairchild/ON Semiconductor

IC TRANS NPN SS RF 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存6,128,100

15V

-

6dB @ 60MHz

15dB

350mW

50 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BFM505,115

NXP

TRANS NPN DUAL 8V 9GHZ 6TSSOP

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 8V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz
Gain: -
Power - Max: 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Current - Collector (Ic) (Max): 18mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封裝: 6-TSSOP, SC-88, SOT-363

庫存7,536

8V

9GHz

1.1dB ~ 1.9dB @ 900MHz ~ 2GHz

-

500mW

60 @ 5mA, 6V

18mA

175°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

DME375A

Microsemi Corporation

TRANS RF BIPO 875W 30A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 55V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): -
Gain: 6.5dB
Power - Max: 875W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Current - Collector (Ic) (Max): 30A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封裝: 55AW

庫存3,776

55V

1.025GHz ~ 1.15GHz

-

6.5dB

875W

10 @ 300mA, 5V

30A

200°C (TJ)

Chassis Mount

55AW

UTV040

Microsemi Corporation

TRANS RF BIPO 25W 2.5A 55FT-7

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 470MHz ~ 860MHz
Noise Figure (dB Typ @ f): -
Gain: 9dB
Power - Max: 25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector (Ic) (Max): 2.5A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: 55FT
Supplier Device Package: 55FT

封裝: 55FT

庫存6,112

25V

470MHz ~ 860MHz

-

9dB

25W

10 @ 500mA, 5V

2.5A

200°C (TJ)

Chassis, Stud Mount

55FT

AT-32063-TR2G

Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
Gain: 12.5dB ~ 14.5dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
Current - Collector (Ic) (Max): 32mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封裝: 6-TSSOP, SC-88, SOT-363

庫存3,776

5.5V

-

1.1dB ~ 1.4dB @ 900MHz

12.5dB ~ 14.5dB

150mW

50 @ 5mA, 2.7V

32mA

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

AT-31011-TR1G

Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
Gain: 11dB ~ 13dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
Current - Collector (Ic) (Max): 16mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存573,360

5.5V

-

0.9dB ~ 1.2dB @ 900MHz

11dB ~ 13dB

150mW

70 @ 1mA, 2.7V

16mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

BLT50,115

NXP

TRANS NPN 7.5V SOT223

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 470MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 300mA, 5V
Current - Collector (Ic) (Max): 500mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223

封裝: TO-261-4, TO-261AA

庫存20,304

10V

470MHz

-

2W

25 @ 300mA, 5V

500mA

175°C (TJ)

Surface Mount

TO-261-4, TO-261AA

SOT-223

BFR 740L3RH E6327

Infineon Technologies

TRANS RF BIPO NPN 30MA TSLP-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain: 24.5dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: PG-TSLP-3

封裝: SC-101, SOT-883

庫存7,312

4.7V

42GHz

0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz

24.5dB

160mW

160 @ 25mA, 3V

30mA

150°C (TJ)

Surface Mount

SC-101, SOT-883

PG-TSLP-3

CPH6003A-TL-E

ON Semiconductor

TRANS NPN BIPO 12V 150MA CPH6

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.8dB @ 1GHz
Gain: 9dB
Power - Max: 800mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: 6-CPH

封裝: SOT-23-6 Thin, TSOT-23-6

庫存2,752

12V

7GHz

1.8dB @ 1GHz

9dB

800mW

100 @ 50mA, 5V

150mA

150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6-CPH

BFR 183 E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 17.5dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存24,168

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

17.5dB

450mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

BFP196WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 150MA SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain: 12.5dB ~ 19dB
Power - Max: 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Current - Collector (Ic) (Max): 150mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4

封裝: SC-82A, SOT-343

庫存26,844

12V

7.5GHz

1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz

12.5dB ~ 19dB

700mW

70 @ 50mA, 8V

150mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

PG-SOT343-4

NESG2030M04-T2-A

CEL

TRANS NPN 2GHZ SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 2.3V
Frequency - Transition: 60GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.1dB @ 2GHz
Gain: 16dB
Power - Max: 80mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOT-343F
Supplier Device Package: M04

封裝: -

Request a Quote

2.3V

60GHz

0.9dB ~ 1.1dB @ 2GHz

16dB

80mW

200 @ 5mA, 2V

35mA

-

Surface Mount

SOT-343F

M04

BFR181E6327HTSA1

Infineon Technologies

RF TRANS NPN 12V 8GHZ SOT23-3

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Gain: 18.5dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23

封裝: -

庫存15,813

12V

8GHz

0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

18.5dB

175mW

70 @ 5mA, 8V

20mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23

90025HS

Microsemi Corporation

RF POWER TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

NESG220034-T1-A

Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5.5V
Frequency - Transition: 11.5GHz
Noise Figure (dB Typ @ f): 0.9dB @ 1GHz
Gain: 12dB
Power - Max: 886mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 10mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI (SOT-89)

封裝: -

Request a Quote

5.5V

11.5GHz

0.9dB @ 1GHz

12dB

886mW

140 @ 10mA, 5V

200mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI (SOT-89)

NESG2021M16-T3-A

Renesas Electronics Corporation

RF SMALL SIGNAL TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz
Gain: 10dB ~ 18dB
Power - Max: 175mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 5mA, 2V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: M16, 1208

封裝: -

Request a Quote

5V

25GHz

0.9dB ~ 1.3dB @ 2GHz ~ 5.2GHz

10dB ~ 18dB

175mW

130 @ 5mA, 2V

35mA

-

Surface Mount

6-SMD, Flat Leads

M16, 1208

MAPL-000817-012CPC

MACOM Technology Solutions

TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

SMMBTH10LT1

onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)

封裝: -

Request a Quote

25V

-

225mW

60 @ 4mA, 10V

-

-55°C ~ 150°C

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3 (TO-236)

CP616-2N5160-CM

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 40V
Frequency - Transition: 500MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

40V

500MHz

-

10 @ 50mA, 5V

400mA

-65°C ~ 150°C (TJ)

Surface Mount

Die

BFR92PE6530HTSA1

Infineon Technologies

RF LOW-NOISE SI TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

CP229-2N5109-CT

Central Semiconductor Corp

RF TRANSISTOR TO-39

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.2GHz
Noise Figure (dB Typ @ f): 3dB @ 200MHz
Gain: 11dB
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封裝: -

Request a Quote

20V

1.2GHz

3dB @ 200MHz

11dB

-

40 @ 50mA, 15V

400mA

-65°C ~ 200°C (TJ)

Surface Mount

Die