頁 25 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Noise Figure (dB Typ @ f)	Gain	Power - Max	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector (Ic) (Max)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
BFS 483 E6327	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-363 Transistor Type: 2 NPN (Dual) Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Gain: 19dB Power - Max: 450mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Current - Collector (Ic) (Max): 65mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封裝: 6-VSSOP, SC-88, SOT-363	庫存3,728	12V	8GHz	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz	19dB	450mW	70 @ 15mA, 8V	65mA	150°C (TJ)	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
NE46134-T1-QR-AZ	CEL	SAME AS 2SC4536 NPN SILICON MEDI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz Gain: 7dB Power - Max: 2W DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V Current - Collector (Ic) (Max): 250mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	封裝: TO-243AA	庫存3,984	15V	5.5GHz	1.5dB ~ 2dB @ 500MHz ~ 1GHz	7dB	2W	40 @ 50mA, 10V	250mA	150°C (TJ)	Surface Mount	TO-243AA	SOT-89
2SC5750-T1-A	CEL	RF TRANSISTOR NPN SOT-343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 15GHz Noise Figure (dB Typ @ f): 1.7dB @ 2GHz Gain: 15dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封裝: SC-82A, SOT-343	庫存2,032	6V	15GHz	1.7dB @ 2GHz	15dB	200mW	75 @ 20mA, 3V	50mA	150°C (TJ)	Surface Mount	SC-82A, SOT-343	SOT-343
2SC3585-T1B-A	CEL	RF TRANSISTOR NPN SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 9dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	封裝: TO-236-3, SC-59, SOT-23-3	庫存41,316	10V	10GHz	1.8dB @ 2GHz	9dB	200mW	50 @ 10mA, 6V	35mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
SD1013	Microsemi Corporation	TRANS RF BIPO 13W 1A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 150MHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 13W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 1A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: M135 Supplier Device Package: M135	封裝: M135	庫存5,328	35V	150MHz	-	10dB	13W	10 @ 200mA, 5V	1A	200°C (TJ)	Chassis Mount	M135	M135
MS1406	Microsemi Corporation	TRANS RF BIPO 30W 3A M135 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 35V Frequency - Transition: 175MHz Noise Figure (dB Typ @ f): - Gain: 8.2dB Power - Max: 30W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V Current - Collector (Ic) (Max): 3A Operating Temperature: 200°C (TJ) Mounting Type: Chassis, Stud Mount Package / Case: M135 Supplier Device Package: M135	封裝: M135	庫存7,120	35V	175MHz	-	8.2dB	30W	10 @ 200mA, 5V	3A	200°C (TJ)	Chassis, Stud Mount	M135	M135
MRF545	Microsemi Corporation	TRANS RF BIPO 3.5W 400MA TO39 Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1GHz ~ 1.4GHz Noise Figure (dB Typ @ f): - Gain: 14dB Power - Max: 3.5W DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V Current - Collector (Ic) (Max): 400mA Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Supplier Device Package: TO-39	封裝: TO-205AD, TO-39-3 Metal Can	庫存3,168	70V	1GHz ~ 1.4GHz	-	14dB	3.5W	15 @ 50mA, 6V	400mA	-	Through Hole	TO-205AD, TO-39-3 Metal Can	TO-39
MRF5812GR1	Microsemi Corporation	TRANS NPN 15V 200MA 8-SOIC Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存12,312	15V	5GHz	2dB ~ 3dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MRF581	Microsemi Corporation	TRANS NPN 18V 200MA MACRO X Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 18V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz Gain: 13dB ~ 15.5dB Power - Max: 1.25W DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V Current - Collector (Ic) (Max): 200mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: Micro-X ceramic (84C) Supplier Device Package: Micro-X ceramic (84C)	封裝: Micro-X ceramic (84C)	庫存5,808	18V	5GHz	3dB ~ 3.5dB @ 500MHz	13dB ~ 15.5dB	1.25W	50 @ 50mA, 5V	200mA	150°C (TJ)	Surface Mount	Micro-X ceramic (84C)	Micro-X ceramic (84C)
MPSH10RLRPG	ON Semiconductor	TRANS NPN VHF/UHF SS 25V TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	庫存45,720	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	TO-92-3
AT-42036-TR1G	Broadcom Limited	TRANS NPN BIPO 12V 80MA 36-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz Gain: 10dB ~ 13.5dB Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (36 micro-X) Supplier Device Package: 36 micro-X	封裝: 4-SMD (36 micro-X)	庫存5,968	12V	8GHz	2dB ~ 3dB @ 2GHz ~ 4GHz	10dB ~ 13.5dB	600mW	30 @ 35mA, 8V	80mA	150°C (TJ)	Surface Mount	4-SMD (36 micro-X)	36 micro-X
AT-41511-BLKG	Broadcom Limited	TRANS NPN BIPO 12V 50MA SOT-143 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz Gain: 11dB ~ 15.5dB Power - Max: 225mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector (Ic) (Max): 50mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143	封裝: TO-253-4, TO-253AA	庫存5,200	12V	-	1dB ~ 1.7dB @ 900MHz ~ 2.4GHz	11dB ~ 15.5dB	225mW	30 @ 5mA, 5V	50mA	150°C (TJ)	Surface Mount	TO-253-4, TO-253AA	SOT-143
AT-64020	Broadcom Limited	TRANS NPN BIPO 20V 200MA 200-SMD Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: 3W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V Current - Collector (Ic) (Max): 200mA Operating Temperature: 200°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD (200 mil BeO) Supplier Device Package: -	封裝: 4-SMD (200 mil BeO)	庫存6,864	20V	-	-	-	3W	20 @ 110mA, 8V	200mA	200°C (TJ)	Surface Mount	4-SMD (200 mil BeO)	-
HFA3128R96	Intersil	IC TRANS ARRAY 5X PND 16QFN Transistor Type: 5 PNP Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 5.5GHz Noise Figure (dB Typ @ f): 3.5dB @ 1GHz Gain: - Power - Max: 150mW DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V Current - Collector (Ic) (Max): 65mA Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	封裝: 16-VFQFN Exposed Pad	庫存5,376	15V	5.5GHz	3.5dB @ 1GHz	-	150mW	20 @ 10mA, 2V	65mA	175°C (TJ)	Surface Mount	16-VFQFN Exposed Pad	16-QFN (3x3)
2N5770_D75Z	Fairchild/ON Semiconductor	TRANSISTOR RF NPN 15V 50MA TO-92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: - Noise Figure (dB Typ @ f): 6dB @ 60MHz Gain: 15dB Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V Current - Collector (Ic) (Max): 50mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: TO-226-3, TO-92-3 (TO-226AA)	庫存2,240	15V	-	6dB @ 60MHz	15dB	350mW	50 @ 8mA, 10V	50mA	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
BF771E6327HTSA1	Infineon Technologies	TRANSISTOR RF NPN 12V SOT-23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Gain: 10dB ~ 15dB Power - Max: 580mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存5,152	12V	8GHz	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz	10dB ~ 15dB	580mW	70 @ 30mA, 8V	80mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3
ITC1100	Microsemi Corporation	TRANS RF BIPO 65V 80A 55SW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz Noise Figure (dB Typ @ f): - Gain: 10dB ~ 10.5dB Power - Max: 3400W DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V Current - Collector (Ic) (Max): 80A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55SW Supplier Device Package: 55SW	封裝: 55SW	庫存5,648	65V	1.03GHz	-	10dB ~ 10.5dB	3400W	10 @ 5A, 5V	80A	200°C (TJ)	Chassis Mount	55SW	55SW
MDS500L	Microsemi Corporation	TRANS RF BIPO 833W 24A 55ST1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 70V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 9.2dB Power - Max: 833W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 24A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55ST Supplier Device Package: 55ST	封裝: 55ST	庫存7,872	70V	1.03GHz ~ 1.09GHz	-	9.2dB	833W	20 @ 1A, 5V	24A	200°C (TJ)	Chassis Mount	55ST	55ST
DME400A	Microsemi Corporation	TRANSISTOR BIPO 55AW-1 Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,344	-	-	-	-	-	-	-	-	-	-	-
MDS60L	Microsemi Corporation	TRANS RF BIPO 120W 4A 55AW1 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 65V Frequency - Transition: 1.03GHz ~ 1.09GHz Noise Figure (dB Typ @ f): - Gain: 10dB Power - Max: 120W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 4A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	封裝: 55AW	庫存3,808	65V	1.03GHz ~ 1.09GHz	-	10dB	120W	20 @ 500mA, 5V	4A	200°C (TJ)	Chassis Mount	55AW	55AW
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封裝: SC-70, SOT-323	庫存54,900	10V	10GHz	1.8dB @ 2GHz	13dB ~ 7dB	100mW	80 @ 7mA, 6V	15mA	125°C (TJ)	Surface Mount	SC-70, SOT-323	SC-70
55GN01CA-TB-E	ON Semiconductor	TRANS NPN BIPOLAR 10V 70MA CP Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 4.5GHz Noise Figure (dB Typ @ f): 1.9dB @ 1GHz Gain: 9.5dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Current - Collector (Ic) (Max): 70mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-CP	封裝: TO-236-3, SC-59, SOT-23-3	庫存432,000	10V	4.5GHz	1.9dB @ 1GHz	9.5dB	200mW	100 @ 10mA, 5V	70mA	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CP
KST10MTF	Fairchild/ON Semiconductor	TRANS NPN 25V 350MW SOT23 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 25V Frequency - Transition: 650MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 350mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存533,760	25V	650MHz	-	-	350mW	60 @ 4mA, 10V	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
2SC5508-T2B-A	Renesas Electronics Corporation	NPN RF TRANSISTOR Transistor Type: - Voltage - Collector Emitter Breakdown (Max): - Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
MT3S111P-TE12L-F	Toshiba Semiconductor and Storage	RF TRANS NPN 6V 8GHZ PW-MINI Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.25dB @ 1GHz Gain: 10.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	封裝: -	Request a Quote	6V	8GHz	1.25dB @ 1GHz	10.5dB	1W	200 @ 30mA, 5V	100mA	150°C (TJ)	Surface Mount	TO-243AA	PW-MINI
2SC5008-A	CEL	RF TRANS NPN 10V 8GHZ SOT523 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Gain: 7.5dB Power - Max: 125mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Supplier Device Package: -	封裝: -	Request a Quote	10V	8GHz	1.9dB @ 2GHz	7.5dB	125mW	80 @ 5mA, 3V	35mA	150°C (TJ)	Surface Mount	SOT-523	-
PN3563-PBFREE	Central Semiconductor Corp	RF TRANS NPN 12V TO92 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: - Noise Figure (dB Typ @ f): - Gain: - Power - Max: - DC Current Gain (hFE) (Min) @ Ic, Vce: - Current - Collector (Ic) (Max): - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封裝: -	庫存34,065	12V	-	-	-	-	-	-	-	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N3496	Microchip Technology	SMALL-SIGNAL BJT Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 80V Frequency - Transition: 250MHz Noise Figure (dB Typ @ f): - Gain: - Power - Max: 600mW DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V Current - Collector (Ic) (Max): 100mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 (TO-206AA)	封裝: -	Request a Quote	80V	250MHz	-	-	600mW	35 @ 100mA, 10V	100mA	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18 (TO-206AA)

BFS 483 E6327

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-363

Transistor Type: 2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain: 19dB
Power - Max: 450mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封裝: 6-VSSOP, SC-88, SOT-363

庫存3,728

12V

8GHz

0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz

19dB

450mW

70 @ 15mA, 8V

65mA

150°C (TJ)

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

NE46134-T1-QR-AZ

CEL

SAME AS 2SC4536 NPN SILICON MEDI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
Gain: 7dB
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
Current - Collector (Ic) (Max): 250mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

封裝: TO-243AA

庫存3,984

15V

5.5GHz

1.5dB ~ 2dB @ 500MHz ~ 1GHz

7dB

2W

40 @ 50mA, 10V

250mA

150°C (TJ)

Surface Mount

TO-243AA

SOT-89

2SC5750-T1-A

CEL

RF TRANSISTOR NPN SOT-343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 15GHz
Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
Gain: 15dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 20mA, 3V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封裝: SC-82A, SOT-343

庫存2,032

6V

15GHz

1.7dB @ 2GHz

15dB

200mW

75 @ 20mA, 3V

50mA

150°C (TJ)

Surface Mount

SC-82A, SOT-343

SOT-343

2SC3585-T1B-A

CEL

RF TRANSISTOR NPN SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 9dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23

封裝: TO-236-3, SC-59, SOT-23-3

庫存41,316

10V

10GHz

1.8dB @ 2GHz

9dB

200mW

50 @ 10mA, 6V

35mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

SD1013

Microsemi Corporation

TRANS RF BIPO 13W 1A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 150MHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 13W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M135
Supplier Device Package: M135

封裝: M135

庫存5,328

35V

150MHz

-

10dB

13W

10 @ 200mA, 5V

1A

200°C (TJ)

Chassis Mount

M135

MS1406

Microsemi Corporation

TRANS RF BIPO 30W 3A M135

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 35V
Frequency - Transition: 175MHz
Noise Figure (dB Typ @ f): -
Gain: 8.2dB
Power - Max: 30W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
Current - Collector (Ic) (Max): 3A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis, Stud Mount
Package / Case: M135
Supplier Device Package: M135

封裝: M135

庫存7,120

35V

175MHz

-

8.2dB

30W

10 @ 200mA, 5V

3A

200°C (TJ)

Chassis, Stud Mount

M135

MRF545

Microsemi Corporation

TRANS RF BIPO 3.5W 400MA TO39

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1GHz ~ 1.4GHz
Noise Figure (dB Typ @ f): -
Gain: 14dB
Power - Max: 3.5W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50mA, 6V
Current - Collector (Ic) (Max): 400mA
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Supplier Device Package: TO-39

封裝: TO-205AD, TO-39-3 Metal Can

庫存3,168

70V

1GHz ~ 1.4GHz

-

14dB

3.5W

15 @ 50mA, 6V

400mA

-

Through Hole

TO-205AD, TO-39-3 Metal Can

TO-39

MRF5812GR1

Microsemi Corporation

TRANS NPN 15V 200MA 8-SOIC

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存12,312

15V

5GHz

2dB ~ 3dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MRF581

Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 18V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Micro-X ceramic (84C)
Supplier Device Package: Micro-X ceramic (84C)

封裝: Micro-X ceramic (84C)

庫存5,808

18V

5GHz

3dB ~ 3.5dB @ 500MHz

13dB ~ 15.5dB

1.25W

50 @ 50mA, 5V

200mA

150°C (TJ)

Surface Mount

Micro-X ceramic (84C)

MPSH10RLRPG

ON Semiconductor

TRANS NPN VHF/UHF SS 25V TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

庫存45,720

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

TO-92-3

AT-42036-TR1G

Broadcom Limited

TRANS NPN BIPO 12V 80MA 36-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 2GHz ~ 4GHz
Gain: 10dB ~ 13.5dB
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 35mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (36 micro-X)
Supplier Device Package: 36 micro-X

封裝: 4-SMD (36 micro-X)

庫存5,968

12V

8GHz

2dB ~ 3dB @ 2GHz ~ 4GHz

10dB ~ 13.5dB

600mW

30 @ 35mA, 8V

80mA

150°C (TJ)

Surface Mount

4-SMD (36 micro-X)

36 micro-X

AT-41511-BLKG

Broadcom Limited

TRANS NPN BIPO 12V 50MA SOT-143

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 1dB ~ 1.7dB @ 900MHz ~ 2.4GHz
Gain: 11dB ~ 15.5dB
Power - Max: 225mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143

封裝: TO-253-4, TO-253AA

庫存5,200

12V

-

1dB ~ 1.7dB @ 900MHz ~ 2.4GHz

11dB ~ 15.5dB

225mW

30 @ 5mA, 5V

50mA

150°C (TJ)

Surface Mount

TO-253-4, TO-253AA

SOT-143

AT-64020

Broadcom Limited

TRANS NPN BIPO 20V 200MA 200-SMD

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 3W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 110mA, 8V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: 200°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD (200 mil BeO)
Supplier Device Package: -

封裝: 4-SMD (200 mil BeO)

庫存6,864

20V

-

3W

20 @ 110mA, 8V

200mA

200°C (TJ)

Surface Mount

4-SMD (200 mil BeO)

-

HFA3128R96

Intersil

IC TRANS ARRAY 5X PND 16QFN

Transistor Type: 5 PNP
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
Gain: -
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
Current - Collector (Ic) (Max): 65mA
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

封裝: 16-VFQFN Exposed Pad

庫存5,376

15V

5.5GHz

3.5dB @ 1GHz

-

150mW

20 @ 10mA, 2V

65mA

175°C (TJ)

Surface Mount

16-VFQFN Exposed Pad

16-QFN (3x3)

2N5770_D75Z

Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V 50MA TO-92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: -
Noise Figure (dB Typ @ f): 6dB @ 60MHz
Gain: 15dB
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 8mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: TO-226-3, TO-92-3 (TO-226AA)

庫存2,240

15V

-

6dB @ 60MHz

15dB

350mW

50 @ 8mA, 10V

50mA

-55°C ~ 150°C (TJ)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

BF771E6327HTSA1

Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain: 10dB ~ 15dB
Power - Max: 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存5,152

12V

8GHz

1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

10dB ~ 15dB

580mW

70 @ 30mA, 8V

80mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

ITC1100

Microsemi Corporation

TRANS RF BIPO 65V 80A 55SW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB ~ 10.5dB
Power - Max: 3400W
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
Current - Collector (Ic) (Max): 80A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55SW
Supplier Device Package: 55SW

封裝: 55SW

庫存5,648

65V

1.03GHz

-

10dB ~ 10.5dB

3400W

10 @ 5A, 5V

80A

200°C (TJ)

Chassis Mount

55SW

MDS500L

Microsemi Corporation

TRANS RF BIPO 833W 24A 55ST1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 70V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 9.2dB
Power - Max: 833W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Current - Collector (Ic) (Max): 24A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55ST
Supplier Device Package: 55ST

封裝: 55ST

庫存7,872

70V

1.03GHz ~ 1.09GHz

-

9.2dB

833W

20 @ 1A, 5V

24A

200°C (TJ)

Chassis Mount

55ST

DME400A

Microsemi Corporation

TRANSISTOR BIPO 55AW-1

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,344

-

MDS60L

Microsemi Corporation

TRANS RF BIPO 120W 4A 55AW1

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f): -
Gain: 10dB
Power - Max: 120W
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Current - Collector (Ic) (Max): 4A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 55AW
Supplier Device Package: 55AW

封裝: 55AW

庫存3,808

65V

1.03GHz ~ 1.09GHz

-

10dB

120W

20 @ 500mA, 5V

4A

200°C (TJ)

Chassis Mount

55AW

2SC5095-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 13dB ~ 7dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封裝: SC-70, SOT-323

庫存54,900

10V

10GHz

1.8dB @ 2GHz

13dB ~ 7dB

100mW

80 @ 7mA, 6V

15mA

125°C (TJ)

Surface Mount

SC-70, SOT-323

SC-70

55GN01CA-TB-E

ON Semiconductor

TRANS NPN BIPOLAR 10V 70MA CP

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 4.5GHz
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Gain: 9.5dB
Power - Max: 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Current - Collector (Ic) (Max): 70mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-CP

封裝: TO-236-3, SC-59, SOT-23-3

庫存432,000

10V

4.5GHz

1.9dB @ 1GHz

9.5dB

200mW

100 @ 10mA, 5V

70mA

150°C (TJ)

Surface Mount

TO-236-3, SC-59, SOT-23-3

3-CP

KST10MTF

Fairchild/ON Semiconductor

TRANS NPN 25V 350MW SOT23

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 25V
Frequency - Transition: 650MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存533,760

25V

650MHz

-

350mW

60 @ 4mA, 10V

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

2SC5508-T2B-A

Renesas Electronics Corporation

NPN RF TRANSISTOR

Transistor Type: -
Voltage - Collector Emitter Breakdown (Max): -
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

MT3S111P-TE12L-F

Toshiba Semiconductor and Storage

RF TRANS NPN 6V 8GHZ PW-MINI

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 6V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1GHz
Gain: 10.5dB
Power - Max: 1W
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

封裝: -

Request a Quote

6V

8GHz

1.25dB @ 1GHz

10.5dB

1W

200 @ 30mA, 5V

100mA

150°C (TJ)

Surface Mount

TO-243AA

PW-MINI

2SC5008-A

CEL

RF TRANS NPN 10V 8GHZ SOT523

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Gain: 7.5dB
Power - Max: 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Supplier Device Package: -

封裝: -

Request a Quote

10V

8GHz

1.9dB @ 2GHz

7.5dB

125mW

80 @ 5mA, 3V

35mA

150°C (TJ)

Surface Mount

SOT-523

-

PN3563-PBFREE

Central Semiconductor Corp

RF TRANS NPN 12V TO92

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: -
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Current - Collector (Ic) (Max): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封裝: -

庫存34,065

12V

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

2N3496

Microchip Technology

SMALL-SIGNAL BJT

Transistor Type: PNP
Voltage - Collector Emitter Breakdown (Max): 80V
Frequency - Transition: 250MHz
Noise Figure (dB Typ @ f): -
Gain: -
Power - Max: 600mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 100mA, 10V
Current - Collector (Ic) (Max): 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)

封裝: -

Request a Quote

80V

250MHz

-

600mW

35 @ 100mA, 10V

100mA

-65°C ~ 200°C (TJ)

Through Hole

TO-206AA, TO-18-3 Metal Can

TO-18 (TO-206AA)