頁 21 - 電晶體 - 雙極 (BJT) - RF | 離散半導體產品 | 黑森爾電子
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電晶體 - 雙極 (BJT) - RF

記錄 1,633
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零件編號
製造商
描述
封裝
庫存
數量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP 640FESD E6327
Infineon Technologies

TRANS RF NPN 46GHZ 4.7V TSFP-4-1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 46GHz
  • Noise Figure (dB Typ @ f): 0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
  • Gain: 8B ~ 30.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封裝: 4-SMD, Flat Leads
庫存3,312
4.7V
46GHz
0.55dB ~ 1.7dB @ 150MHz ~ 10GHz
8B ~ 30.5dB
200mW
110 @ 30mA, 3V
50mA
-
Surface Mount
4-SMD, Flat Leads
4-TSFP
BF799WE6327BTSA1
Infineon Technologies

TRANSISTOR NPN RF 20V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 3dB @ 100MHz
  • Gain: -
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封裝: SC-70, SOT-323
庫存2,176
20V
800MHz
3dB @ 100MHz
-
280mW
40 @ 20mA, 10V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
hot 2SC5338-T1-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存126,444
12V
6GHz
3.5dB @ 1GHz
10dB
1.8W
50 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
START499D
STMicroelectronics

TRANS RF NPN 4.5V 1A SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13dB ~ 14dB
  • Power - Max: 1.7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 160mA, 3V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存7,792
4.5V
-
-
13dB ~ 14dB
1.7W
150 @ 160mA, 3V
1A
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
HFA3128RZ
Intersil

IC TRANSISTOR ARRAY PNP 16-QFN

  • Transistor Type: 5 PNP
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-QFN (3x3)
封裝: 16-VFQFN Exposed Pad
庫存5,584
15V
5.5GHz
3.5dB @ 1GHz
-
150mW
20 @ 10mA, 2V
65mA
175°C (TJ)
Surface Mount
16-VFQFN Exposed Pad
16-QFN (3x3)
FPNH10
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 25V 50MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存5,152
25V
650MHz
-
-
350mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
PN918
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 15V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封裝: TO-226-3, TO-92-3 (TO-226AA)
庫存7,552
15V
600MHz
6dB @ 60MHz
15dB
350mW
20 @ 3mA, 1V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BFR92A,215
NXP

TRANS NPN 25MA 15V 5GHZ SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.1dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 15mA, 10V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存2,384
15V
5GHz
2.1dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
65 @ 15mA, 10V
25mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
hot NE85634-T1
CEL

TRANS NPN 1GHZ SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6.5GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
  • Gain: -
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封裝: TO-243AA
庫存46,680
12V
6.5GHz
1.4dB @ 1GHz
-
2W
50 @ 20mA, 10V
100mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
BFR106,215
NXP

TRANS NPN 15V 5GHZ SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 800MHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 9V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存6,256
15V
5GHz
3.5dB @ 800MHz
-
500mW
25 @ 50mA, 9V
100mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFQ67W,135
NXP

TRANS NPN 10V 20MA 8GHZ SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
封裝: SC-70, SOT-323
庫存3,728
10V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 2GHz
-
300mW
60 @ 15mA, 5V
50mA
175°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
BFG67,215
NXP

TRANS RF NPN 8GHZ 10V SOT143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 3dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 380mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存5,728
10V
8GHz
1.3dB ~ 3dB @ 1GHz ~ 2GHz
-
380mW
60 @ 15mA, 5V
50mA
175°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFG520W,115
NXP

TRANS NPN 6V 70MA SOT343N

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
封裝: SOT-343 Reverse Pinning
庫存3,376
15V
9GHz
1.1dB ~ 2.1dB @ 900MHz
-
500mW
60 @ 20mA, 6V
70mA
175°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
TAN75A
Microsemi Corporation

TRANS RF BIPO 290W 9A 55AZ1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB ~ 8.5dB
  • Power - Max: 290W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15mA, 5V
  • Current - Collector (Ic) (Max): 9A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AZ
  • Supplier Device Package: 55AZ
封裝: 55AZ
庫存7,120
50V
960MHz ~ 1.215GHz
-
8dB ~ 8.5dB
290W
10 @ 15mA, 5V
9A
200°C (TJ)
Chassis Mount
55AZ
55AZ
HFA3127RZ96
Intersil

IC TRANS ARRAY 5X NPN 16-QFN

  • Transistor Type: 5 NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-QFN (3x3)
封裝: 16-VFQFN Exposed Pad
庫存4,128
12V
8GHz
3.5dB @ 1GHz
-
150mW
40 @ 10mA, 2V
65mA
175°C (TJ)
Surface Mount
16-VFQFN Exposed Pad
16-QFN (3x3)
hot UPA800T-T1
CEL

TRANS NPN HF FT=8GHZ SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.9dB ~ 3.2dB @ 2GHz
  • Gain: -
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-SO
封裝: 6-TSSOP, SC-88, SOT-363
庫存1,760,460
10V
8GHz
1.9dB ~ 3.2dB @ 2GHz
-
200mW
80 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
6-SO
hot MRF5812R2
Microsemi Corporation

RF TRANS NPN 18V 200MA 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 500MHz
  • Gain: 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存266,268
18V
5GHz
2dB @ 500MHz
15.5dB
1.25W
50 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
BFU530VL
NXP

TRANS RF NPN 12V 40MA SOT-143B

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封裝: TO-253-4, TO-253AA
庫存6,512
12V
11GHz
1.1dB @ 1.8GHz
15.5dB
450mW
60 @ 10mA, 8V
40mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143B
BFU520XRVL
NXP

TRANS RF NPN 12V 30MA SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
封裝: SOT-143R
庫存3,008
12V
10.5GHz
1dB @ 1.8GHz
17.5dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
MRF1000MB
M/A-Com Technology Solutions

TRANS NPN 0.7W 960MHZ-1215MHZ

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.7dB ~ 12dB
  • Power - Max: 0.7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 332A-02
  • Supplier Device Package: 332A-03, Style 2
封裝: 332A-02
庫存10,980
20V
-
-
10.7dB ~ 12dB
0.7W
10 @ 100mA, 5V
200mA
-
Chassis Mount
332A-02
332A-03, Style 2
2SC393400L
Panasonic Electronic Components

TRANS NPN 12VCEO 30MA SMINI-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.5dB @ 800MHz
  • Gain: 9dB ~ 12dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SMini3-G1
封裝: SC-70, SOT-323
庫存7,344
12V
4.5GHz
1.3dB ~ 2.5dB @ 800MHz
9dB ~ 12dB
150mW
40 @ 10mA, 10V
30mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SMini3-G1
BFT93,215
NXP

TRANS PNP 12V 5GHZ SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2.4dB @ 500MHz
  • Gain: -
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 30mA, 5V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封裝: TO-236-3, SC-59, SOT-23-3
庫存58,962
12V
5GHz
2.4dB @ 500MHz
-
300mW
20 @ 30mA, 5V
35mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFU520XRR
NXP

TRANS RF NPN 12V 30MA SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 900MHz
  • Gain: 20dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
封裝: SOT-143R
庫存24,630
12V
10.5GHz
0.65dB @ 900MHz
20dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
2N5109-PBFREE
Central Semiconductor Corp

RF TRANS NPN 20V 1.2GHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封裝: -
Request a Quote
20V
1.2GHz
3dB @ 200MHz
-
1W
40 @ 50mA, 15V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
PH9105
MACOM Technology Solutions

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
CP616-2N5160-CT
Central Semiconductor Corp

RF TRANSISTOR TO-39

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封裝: -
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40V
500MHz
-
-
-
10 @ 50mA, 5V
400mA
-65°C ~ 150°C (TJ)
Surface Mount
Die
Die
MRF5812MR1
Microsemi Corporation

TRANS NPN 15V 200MA

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
JANS2N2857UB-LC
Microsemi Corporation

RF TRANS NPN 15V UB

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封裝: -
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15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB