頁 93 - Toshiba Semiconductor and Storage 產品

零件編號	製造商	描述	封裝	庫存
2SJ668(TE16L1,NQ)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 5A PW-MOLD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存6,096
SSM3K17SU,LF	Toshiba Semiconductor and Storage	MOSFET N-CH 50V 100MA USM FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V Vgs (Max): - FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: USM Package / Case: SC-70, SOT-323	封裝: SC-70, SOT-323	庫存5,264
TK4P55DA(T6RSS-Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 550V 3.5A DPAK-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 550V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1.8A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存3,920
2SJ360(TE12L,F)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 1A SC-62 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MINI Package / Case: TO-243AA	封裝: TO-243AA	庫存21,480
TPC8129,LQ(S	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 9A 8SOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,568
2SC4604,T6F(J	Toshiba Semiconductor and Storage	TRANS NPN 3A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封裝: TO-226-3, TO-92-3 Long Body	庫存5,040
2SD1407A-Y(F)	Toshiba Semiconductor and Storage	TRANS NPN 100V 5A TO220NIS Transistor Type: NPN Current - Collector (Ic) (Max): 5A Voltage - Collector Emitter Breakdown (Max): 100V Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V Power - Max: 30W Frequency - Transition: 12MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	封裝: TO-220-3 Full Pack	庫存3,472
RN2110,LF(CB	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1W SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: SC-75, SOT-416	庫存4,960
2SC5095-O(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR NPN MM-USM Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 10V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 1.8dB @ 2GHz Gain: 13dB ~ 7dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V Current - Collector (Ic) (Max): 15mA Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	封裝: SC-70, SOT-323	庫存54,900
RN1908(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.2W US6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存2,352
RN4904,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存52,494
RN4907FE,LF(CB	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.1W ES6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存75,426
TA48M03F(T6L1,SNQ)	Toshiba Semiconductor and Storage	IC REG LINEAR 3V 500MA PW-MOLD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 29V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.65V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 1.4mA ~ 25mA PSRR: 70dB (120Hz) Control Features: - Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PW-MOLD	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存5,184
TB6617FNG(O,EL)	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 16SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 1A Voltage - Supply: 2.7 V ~ 5.5 V Voltage - Load: 4.5 V ~ 45 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-SSOP	封裝: 16-LSSOP (0.173", 4.40mm Width)	庫存47,280
74VHC574FT(BE)	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG SNGL 20TSSOP Function: Standard Type: D-Type Output Type: Tri-State, Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 115MHz Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Current - Quiescent (Iq): 4µA Input Capacitance: 4pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width)	封裝: 20-TSSOP (0.173", 4.40mm Width)	庫存6,656
TC74ACT245FTEL	Toshiba Semiconductor and Storage	IC TRANSCVR 8BIT N-INV 20TSSOP Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 24mA, 24mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封裝: 20-TSSOP (0.173", 4.40mm Width)	庫存3,680
74HC245D(BJ)	Toshiba Semiconductor and Storage	74HC CMOS LOGIC IC SERIES 20SOIC Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: Push-Pull Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	封裝: 20-SOIC (0.295", 7.50mm Width)	庫存17,220
TCS10DPU(TE85L,F)	Toshiba Semiconductor and Storage	MAGNETIC SWITCH OMNIPOLAR 5-UFV Function: Omnipolar Switch Technology: Hall Effect Polarization: Either Sensing Range: ±2.5mT Trip, ±0.3mT Release Test Condition: 25°C Voltage - Supply: 2.3 V ~ 3.6 V Current - Supply (Max): 1.3mA Current - Output (Max): 5mA Output Type: Push-Pull Features: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: 5-UFV	封裝: 6-SMD (5 Leads), Flat Lead	庫存7,074
TLP3125(F)	Toshiba Semiconductor and Storage	PHOTORELAY MOSFET 200MA 8-SOP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 4 Ohm Load Current: 200mA Voltage - Input: 1.15VDC Voltage - Load: 0 ~ 400 V Mounting Type: Surface Mount Termination Style: Gull Wing Package / Case: 8-SOP (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (2.54mm) Relay Type: Relay	封裝: 8-SOP (0.173", 4.40mm Width)	庫存5,058
TLP3545(F)	Toshiba Semiconductor and Storage	PHOTOCOUPLER PHOTORELAY 6-DIP Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 70 mOhm Load Current: 3A Voltage - Input: 1.33VDC Voltage - Load: 0 ~ 60 V Mounting Type: Through Hole Termination Style: PC Pin Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP Relay Type: Relay	封裝: 6-DIP (0.300", 7.62mm)	庫存12,228
6N138F	Toshiba Semiconductor and Storage	OPTOISO 2.5KV DARL W/BASE 8DIP Number of Channels: 1 Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 300% @ 1.6mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 1µs, 4µs Rise / Fall Time (Typ): - Input Type: DC Output Type: Darlington with Base Voltage - Output (Max): 18V Current - Output / Channel: 60mA Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Vce Saturation (Max): - Operating Temperature: 0°C ~ 70°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封裝: 8-DIP (0.300", 7.62mm)	庫存17,364
TLP5751(D4-TP,E	Toshiba Semiconductor and Storage	OPTOISO 5KV GATE DRVR SO6L Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 1A, 1A Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, CSA, cUL, UL, VDE	封裝: 6-SOIC (0.295", 7.50mm Width)	庫存16,974
CMS10I40A-TE12L-QM	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A M-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 62pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: 150°C (Max)	封裝: -	庫存9,000
RN1110-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: -	庫存18,000
TPCP8F01-TE85L-F-M	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR Transistor Type: PNP, N-Channel Applications: Load Switch Voltage - Rated: 20V Current Rating: 3A Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8	封裝: -	Request a Quote
RN4982-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) NP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存8,880
RN1112-LXHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A SSM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 22 kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: -	庫存18,000
SSM6N357R-LF	Toshiba Semiconductor and Storage	MOSFET 2N-CH 60V 0.65A 6TSOPF FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V Power - Max: 1.5W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: 6-TSOP-F	封裝: -	庫存20,688

2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 170 mOhm @ 2.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: PW-MOLD
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存6,096

SSM3K17SU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 50V 100MA USM

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: USM
Package / Case: SC-70, SOT-323

封裝: SC-70, SOT-323

庫存5,264

TK4P55DA(T6RSS-Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 3.5A DPAK-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 2.45 Ohm @ 1.8A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存3,920

2SJ360(TE12L,F)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 1A SC-62

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 730 mOhm @ 500mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PW-MINI
Package / Case: TO-243AA

封裝: TO-243AA

庫存21,480

TPC8129,LQ(S

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 9A 8SOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 10V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 22 mOhm @ 4.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,568

2SC4604,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

庫存5,040

2SD1407A-Y(F)

Toshiba Semiconductor and Storage

TRANS NPN 100V 5A TO220NIS

Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2V @ 400mA, 4A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Power - Max: 30W
Frequency - Transition: 12MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220NIS

封裝: TO-220-3 Full Pack

庫存3,472

RN2110,LF(CB

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1W SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: SC-75, SOT-416

庫存4,960

2SC5095-O(TE85L,F)

Toshiba Semiconductor and Storage

TRANSISTOR NPN MM-USM

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 10V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
Gain: 13dB ~ 7dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 7mA, 6V
Current - Collector (Ic) (Max): 15mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70

封裝: SC-70, SOT-323

庫存54,900

RN1908(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存2,352

RN4904,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存52,494

RN4907FE,LF(CB

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.1W ES6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存75,426

TA48M03F(T6L1,SNQ)

Toshiba Semiconductor and Storage

IC REG LINEAR 3V 500MA PW-MOLD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 29V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.65V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): 1.4mA ~ 25mA
PSRR: 70dB (120Hz)
Control Features: -
Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PW-MOLD

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存5,184

TB6617FNG(O,EL)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 1A
Voltage - Supply: 2.7 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 45 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-SSOP

封裝: 16-LSSOP (0.173", 4.40mm Width)

庫存47,280

74VHC574FT(BE)

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG SNGL 20TSSOP

Function: Standard
Type: D-Type
Output Type: Tri-State, Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 115MHz
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 4pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)

封裝: 20-TSSOP (0.173", 4.40mm Width)

庫存6,656

TC74ACT245FTEL

Toshiba Semiconductor and Storage

IC TRANSCVR 8BIT N-INV 20TSSOP

Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 24mA, 24mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封裝: 20-TSSOP (0.173", 4.40mm Width)

庫存3,680

74HC245D(BJ)

Toshiba Semiconductor and Storage

74HC CMOS LOGIC IC SERIES 20SOIC

Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

封裝: 20-SOIC (0.295", 7.50mm Width)

庫存17,220

TCS10DPU(TE85L,F)

Toshiba Semiconductor and Storage

MAGNETIC SWITCH OMNIPOLAR 5-UFV

Function: Omnipolar Switch
Technology: Hall Effect
Polarization: Either
Sensing Range: ±2.5mT Trip, ±0.3mT Release
Test Condition: 25°C
Voltage - Supply: 2.3 V ~ 3.6 V
Current - Supply (Max): 1.3mA
Current - Output (Max): 5mA
Output Type: Push-Pull
Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: 5-UFV

封裝: 6-SMD (5 Leads), Flat Lead

庫存7,074

TLP3125(F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET 200MA 8-SOP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 4 Ohm
Load Current: 200mA
Voltage - Input: 1.15VDC
Voltage - Load: 0 ~ 400 V
Mounting Type: Surface Mount
Termination Style: Gull Wing
Package / Case: 8-SOP (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (2.54mm)
Relay Type: Relay

封裝: 8-SOP (0.173", 4.40mm Width)

庫存5,058

TLP3545(F)

Toshiba Semiconductor and Storage

PHOTOCOUPLER PHOTORELAY 6-DIP

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 70 mOhm
Load Current: 3A
Voltage - Input: 1.33VDC
Voltage - Load: 0 ~ 60 V
Mounting Type: Through Hole
Termination Style: PC Pin
Package / Case: 6-DIP (0.300", 7.62mm)
Supplier Device Package: 6-DIP
Relay Type: Relay

封裝: 6-DIP (0.300", 7.62mm)

庫存12,228

6N138F

Toshiba Semiconductor and Storage

OPTOISO 2.5KV DARL W/BASE 8DIP

Number of Channels: 1
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 300% @ 1.6mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 1µs, 4µs
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Darlington with Base
Voltage - Output (Max): 18V
Current - Output / Channel: 60mA
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 20mA
Vce Saturation (Max): -
Operating Temperature: 0°C ~ 70°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

庫存17,364

TLP5751(D4-TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Rise / Fall Time (Typ): 15ns, 8ns
Current - Output High, Low: 1A, 1A
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 15 V ~ 30 V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 6-SO
Approvals: CQC, CSA, cUL, UL, VDE

封裝: 6-SOIC (0.295", 7.50mm Width)

庫存16,974

CMS10I40A-TE12L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1A M-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 62pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: 150°C (Max)

封裝: -

庫存9,000

RN1110-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: -

庫存18,000

TPCP8F01-TE85L-F-M

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

Transistor Type: PNP, N-Channel
Applications: Load Switch
Voltage - Rated: 20V
Current Rating: 3A
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8

封裝: -

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RN4982-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) NP

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存8,880

RN1112-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 22 kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: -

庫存18,000

SSM6N357R-LF

Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.65A 6TSOPF

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V
Power - Max: 1.5W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: 6-TSOP-F

封裝: -

庫存20,688