頁 92 - Toshiba Semiconductor and Storage 產品

零件編號	製造商	描述	封裝	庫存
2SJ377(TE16R1,NQ)	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 5A PW-MOLD FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PW-MOLD Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存4,928
TPCA8064-H,LQ(CM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 20A 8SOP-ADV FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 32W (Tc) Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封裝: 8-PowerVDFN	庫存6,288
TK12E80W,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 11.5A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 300V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.8A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封裝: TO-220-3	庫存8,064
2SC2229-Y(SAN2,F,M	Toshiba Semiconductor and Storage	TRANS NPN 50MA 150V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封裝: TO-226-3, TO-92-3 Long Body	庫存2,192
2SA1163-GR,LF	Toshiba Semiconductor and Storage	TRANS PNP 120V 0.1A SMINI Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 150mW Frequency - Transition: 100MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	封裝: TO-236-3, SC-59, SOT-23-3	庫存67,398
RN2968FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存3,440
RN2905FE,LF(CB	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存7,392
RN2605(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.3W SM6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封裝: SC-74, SOT-457	庫存2,016
CLH01(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 0.98V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	封裝: L-FLAT?	庫存6,736
TCR2EF27,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 2.7V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.7V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封裝: SC-74A, SOT-753	庫存6,224
TCR2EF10,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 1V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封裝: SC-74A, SOT-753	庫存3,568
TA7291SG(O,J)	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 9SIP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Bipolar Step Resolution: - Applications: General Purpose Current - Output: 400mA Voltage - Supply: 4.5 V ~ 20 V Voltage - Load: 0 V ~ 20 V Operating Temperature: -30°C ~ 75°C (TA) Mounting Type: Through Hole Package / Case: 9-SIP Supplier Device Package: 9-SIP	封裝: 9-SIP	庫存5,776
TA7291P(O)	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 10HSIP Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Bipolar Step Resolution: - Applications: General Purpose Current - Output: 1A Voltage - Supply: 4.5 V ~ 20 V Voltage - Load: 0 V ~ 20 V Operating Temperature: -30°C ~ 75°C (TA) Mounting Type: Through Hole Package / Case: 10-SIP, Exposed Tab Supplier Device Package: 10-HSIP	封裝: 10-SIP, Exposed Tab	庫存4,000
TB6569FTG,8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 32VQFN Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel, PWM Technology: Bi-CMOS Step Resolution: - Applications: General Purpose Current - Output: 1.5A Voltage - Supply: 10 V ~ 45 V Voltage - Load: 10 V ~ 45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Supplier Device Package: 32-VQFN (5x5)	封裝: 32-VFQFN Exposed Pad	庫存21,996
TC74HC123AF(ELNE,F	Toshiba Semiconductor and Storage	IC MULTIVIBRATR 22NS 16SOP Logic Type: Monostable Independent Circuits: 2 Schmitt Trigger Input: Yes Propagation Delay: 22ns Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Supplier Device Package: 16-SOP	封裝: 16-SOIC (0.209", 5.30mm Width)	庫存6,048
TJM35420XLQ,EL	Toshiba Semiconductor and Storage	TRANSFERJET WIRELESS TRANSCEIVER Type: - RF Family/Standard: - Protocol: - Modulation: - Frequency: - Data Rate (Max): - Power - Output: - Sensitivity: - Memory Size: - Serial Interfaces: - GPIO: - Voltage - Supply: - Current - Receiving: - Current - Transmitting: - Operating Temperature: - Package / Case: Module	封裝: Module	庫存4,194
TLP292-4(LGBTR,E	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS SO16 Number of Channels: 4 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 500µA Current Transfer Ratio (Max): 600% @ 500µA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.179", 4.55mm Width) Supplier Device Package: 16-SO	封裝: 16-SOIC (0.179", 4.55mm Width)	庫存6,876
74HC4052D	Toshiba Semiconductor and Storage	IC MUX 2 X 4:1 4 OHM 16SOIC Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 2 On-State Resistance (Max): 130 Ohm Channel-to-Channel Matching (ΔRon): 4 Ohm Voltage - Supply, Single (V+): 2 V ~ 6 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 34ns, 32ns -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 1µA Crosstalk: -50dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存5,056
74HC4051D	Toshiba Semiconductor and Storage	IC MUX 8:1 4 OHM 16SOIC Switch Circuit: - Multiplexer/Demultiplexer Circuit: 8:1 Number of Circuits: 1 On-State Resistance (Max): 130 Ohm Channel-to-Channel Matching (ΔRon): 4 Ohm Voltage - Supply, Single (V+): 2 V ~ 6 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 34ns, 32ns -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 1µA Crosstalk: -50dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封裝: 16-SOIC (0.154", 3.90mm Width)	庫存5,664
TB6613FTG,8,EL	Toshiba Semiconductor and Storage	8 H-BRIDGE DRIVER, CAN BE CONFIG Motor Type - Stepper: - Motor Type - AC, DC: - Function: - Output Configuration: - Interface: - Technology: - Step Resolution: - Applications: - Current - Output: - Voltage - Supply: - Voltage - Load: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,528
TCR2EF32,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT3.2V DROPOUT180MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,192
XPN6R706NC-L1XHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 40A 8TSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Package / Case: 8-PowerVDFN	封裝: -	庫存87,855
7UL1T86FU-LF	Toshiba Semiconductor and Storage	IC GATE XOR 1CH 2-INP USV Logic Type: XOR (Exclusive OR) Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 2.3V ~ 3.6V Current - Quiescent (Max): 1 µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1V ~ 0.4V Logic Level - High: 2V ~ 2.48V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Supplier Device Package: USV Package / Case: 5-TSSOP, SC-70-5, SOT-353	封裝: -	庫存17,625
RN2105-LF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: -	庫存35,895
TK22V65X5-LQ	Toshiba Semiconductor and Storage	PB-F POWER MOSFET TRANSISTOR DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-VSFN Exposed Pad	封裝: -	庫存7,500
7UL1G07FU-LF	Toshiba Semiconductor and Storage	IC BUFFER NON-INVERT 3.6V USV Logic Type: Buffer, Non-Inverting Number of Elements: 1 Number of Bits per Element: 1 Input Type: - Output Type: Open Drain Current - Output High, Low: -, 8mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封裝: -	庫存34,125
TK90S06N1L-LXHQ	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 90A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 90A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	庫存28,932
CMH05-TE12L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A M-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40°C ~ 150°C	封裝: -	Request a Quote

2SJ377(TE16R1,NQ)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 5A PW-MOLD

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 190 mOhm @ 2.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PW-MOLD
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存4,928

TPCA8064-H,LQ(CM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 20A 8SOP-ADV

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

庫存6,288

TK12E80W,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V 11.5A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 300V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 450 mOhm @ 5.8A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封裝: TO-220-3

庫存8,064

2SC2229-Y(SAN2,F,M

Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

庫存2,192

2SA1163-GR,LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 150mW
Frequency - Transition: 100MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini

封裝: TO-236-3, SC-59, SOT-23-3

庫存67,398

RN2968FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存3,440

RN2905FE,LF(CB

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存7,392

RN2605(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.3W SM6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

封裝: SC-74, SOT-457

庫存2,016

CLH01(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 200V 3A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.98V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: L-FLAT?

庫存6,736

TCR2EF27,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 2.7V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.7V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封裝: SC-74A, SOT-753

庫存6,224

TCR2EF10,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封裝: SC-74A, SOT-753

庫存3,568

TA7291SG(O,J)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 9SIP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Bipolar
Step Resolution: -
Applications: General Purpose
Current - Output: 400mA
Voltage - Supply: 4.5 V ~ 20 V
Voltage - Load: 0 V ~ 20 V
Operating Temperature: -30°C ~ 75°C (TA)
Mounting Type: Through Hole
Package / Case: 9-SIP
Supplier Device Package: 9-SIP

封裝: 9-SIP

庫存5,776

TA7291P(O)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 10HSIP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel
Technology: Bipolar
Step Resolution: -
Applications: General Purpose
Current - Output: 1A
Voltage - Supply: 4.5 V ~ 20 V
Voltage - Load: 0 V ~ 20 V
Operating Temperature: -30°C ~ 75°C (TA)
Mounting Type: Through Hole
Package / Case: 10-SIP, Exposed Tab
Supplier Device Package: 10-HSIP

封裝: 10-SIP, Exposed Tab

庫存4,000

TB6569FTG,8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 32VQFN

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (2)
Interface: Parallel, PWM
Technology: Bi-CMOS
Step Resolution: -
Applications: General Purpose
Current - Output: 1.5A
Voltage - Supply: 10 V ~ 45 V
Voltage - Load: 10 V ~ 45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Supplier Device Package: 32-VQFN (5x5)

封裝: 32-VFQFN Exposed Pad

庫存21,996

TC74HC123AF(ELNE,F

Toshiba Semiconductor and Storage

IC MULTIVIBRATR 22NS 16SOP

Logic Type: Monostable
Independent Circuits: 2
Schmitt Trigger Input: Yes
Propagation Delay: 22ns
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 16-SOP

封裝: 16-SOIC (0.209", 5.30mm Width)

庫存6,048

TJM35420XLQ,EL

Toshiba Semiconductor and Storage

TRANSFERJET WIRELESS TRANSCEIVER

Type: -
RF Family/Standard: -
Protocol: -
Modulation: -
Frequency: -
Data Rate (Max): -
Power - Output: -
Sensitivity: -
Memory Size: -
Serial Interfaces: -
GPIO: -
Voltage - Supply: -
Current - Receiving: -
Current - Transmitting: -
Operating Temperature: -
Package / Case: Module

封裝: Module

庫存4,194

TLP292-4(LGBTR,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

Number of Channels: 4
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 500µA
Current Transfer Ratio (Max): 600% @ 500µA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.179", 4.55mm Width)
Supplier Device Package: 16-SO

封裝: 16-SOIC (0.179", 4.55mm Width)

庫存6,876

74HC4052D

Toshiba Semiconductor and Storage

IC MUX 2 X 4:1 4 OHM 16SOIC

Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Number of Circuits: 2
On-State Resistance (Max): 130 Ohm
Channel-to-Channel Matching (ΔRon): 4 Ohm
Voltage - Supply, Single (V+): 2 V ~ 6 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 34ns, 32ns
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Crosstalk: -50dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存5,056

74HC4051D

Toshiba Semiconductor and Storage

IC MUX 8:1 4 OHM 16SOIC

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: 8:1
Number of Circuits: 1
On-State Resistance (Max): 130 Ohm
Channel-to-Channel Matching (ΔRon): 4 Ohm
Voltage - Supply, Single (V+): 2 V ~ 6 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 34ns, 32ns
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Crosstalk: -50dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

庫存5,664

TB6613FTG,8,EL

Toshiba Semiconductor and Storage

8 H-BRIDGE DRIVER, CAN BE CONFIG

Motor Type - Stepper: -
Motor Type - AC, DC: -
Function: -
Output Configuration: -
Interface: -
Technology: -
Step Resolution: -
Applications: -
Current - Output: -
Voltage - Supply: -
Voltage - Load: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,528

TCR2EF32,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT3.2V DROPOUT180MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,192

XPN6R706NC-L1XHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A 8TSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 20A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Package / Case: 8-PowerVDFN

封裝: -

庫存87,855

7UL1T86FU-LF

Toshiba Semiconductor and Storage

IC GATE XOR 1CH 2-INP USV

Logic Type: XOR (Exclusive OR)
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 2.3V ~ 3.6V
Current - Quiescent (Max): 1 µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1V ~ 0.4V
Logic Level - High: 2V ~ 2.48V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 15pF
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Supplier Device Package: USV
Package / Case: 5-TSSOP, SC-70-5, SOT-353

封裝: -

庫存17,625

RN2105-LF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: -

庫存35,895

TK22V65X5-LQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 11A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 4-DFN-EP (8x8)
Package / Case: 4-VSFN Exposed Pad

封裝: -

庫存7,500

7UL1G07FU-LF

Toshiba Semiconductor and Storage

IC BUFFER NON-INVERT 3.6V USV

Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Number of Bits per Element: 1
Input Type: -
Output Type: Open Drain
Current - Output High, Low: -, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封裝: -

庫存34,125

TK90S06N1L-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 90A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: DPAK+
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

庫存28,932

CMH05-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: M-FLAT (2.4x3.8)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

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