頁 3 - Toshiba Semiconductor and Storage 產品 - 電晶體 - 雙極 (BJT) - 陣列

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
HN1B04F(TE85L,F)	Toshiba Semiconductor and Storage	TRANS NPN/PNP 30V 0.5A SM6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封裝: SC-74, SOT-457	庫存5,232	500mA	30V	250mV @ 10mA, 100mA	100nA (ICBO)	70 @ 100mA, 1V	300mW	200MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	SM6
HN2A01FE-Y(TE85L,F	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A ES6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存5,168	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN2A01FE-GR(TE85LF	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A ES6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 800MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存2,176	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	800MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN2C01FE-GR(T5L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A ES6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存6,896	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	60MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN3C51F-GR(TE85L,F	Toshiba Semiconductor and Storage	TRANS 2NPN 120V 0.1A SM6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封裝: SC-74, SOT-457	庫存3,408	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	200 @ 2mA, 6V	300mW	100MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	SM6
HN3C51F-BL(TE85L,F	Toshiba Semiconductor and Storage	TRANS 2NPN 120V 0.1A SM6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封裝: SC-74, SOT-457	庫存6,544	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	350 @ 2mA, 6V	300mW	100MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	SM6
HN3A51F(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP 120V 0.1A SM6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封裝: SC-74, SOT-457	庫存7,088	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	200 @ 2mA, 6V	300mW	100MHz	150°C (TJ)	Surface Mount	SC-74, SOT-457	SM6
ULN2803APG,CN	Toshiba Semiconductor and Storage	TRANS 8NPN DARL 50V 0.5A 18DIP Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.47W Frequency - Transition: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	封裝: 18-DIP (0.300", 7.62mm)	庫存5,952	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	1.47W	-	-40°C ~ 85°C (TA)	Through Hole	18-DIP (0.300", 7.62mm)	18-DIP
ULN2803AFWG,C,EL	Toshiba Semiconductor and Storage	TRANS 8NPN DARL 50V 0.5A 18SOL Transistor Type: 8 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.31W Frequency - Transition: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOL	封裝: 18-SOIC (0.295", 7.50mm Width)	庫存4,608	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	1.31W	-	-40°C ~ 85°C (TA)	Surface Mount	18-SOIC (0.295", 7.50mm Width)	18-SOL