Toshiba Semiconductor and Storage 產品 - 電晶體 - 雙極 (BJT) - 陣列

零件編號	製造商	描述	封裝	庫存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
HN2C01FU-GR(T5L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A US6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存28,278	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	200mW	80MHz	125°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN2A01FU-Y(TE85L,F	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A US6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存28,752	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200mW	80MHz	125°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN4C06J-BL(TE85L,F	Toshiba Semiconductor and Storage	TRANS 2 NPN 120V 100MA SC74A Transistor Type: 2 NPN (Dual) Common Emitter Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封裝: SC-74A, SOT-753	庫存23,004	100mA	120V	300mV @ 1mA, 10mA	100nA (ICBO)	200 @ 2mA, 6V	300mW	100MHz	150°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV
HN4A56JU(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2 PNP 50V 150MA 5TSSOP Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封裝: 5-TSSOP, SC-70-5, SOT-353	庫存43,644	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200mW	60MHz	150°C (TJ)	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
HN1C01FE-GR,LF	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A ES6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存28,986	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN1C01FE-Y,LF	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A ES6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存35,664	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN1A01FE-Y,LF	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A ES6 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存70,218	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN1B04FE-Y,LF	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 0.15A ES6 Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: SOT-563, SOT-666	庫存34,614	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN1A01FE-GR-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + PNP TR VCEO:-50 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存23,076	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
TPCP8701-TE85L-F-M	Toshiba Semiconductor and Storage	TRANS 2NPN 80V 3A PS8 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V Power - Max: 1.77W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8	封裝: -	Request a Quote	3A	80V	140mV @ 20mA, 1A	100nA (ICBO)	400 @ 300mA, 2V	1.77W	-	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	PS-8
HN1C03FU-B-LF	Toshiba Semiconductor and Storage	NPN + NPN IND. TRANSISTOR VCEO20 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Power - Max: 200mW Frequency - Transition: 30MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存16,884	300mA	20V	100mV @ 3mA, 30A	100nA (ICBO)	350 @ 4mA, 2V	200mW	30MHz	150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN1C01F-GR-TE85L-F	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A SM6 Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 800MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封裝: -	Request a Quote	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	300mW	800MHz	125°C (TJ)	Surface Mount	SC-74, SOT-457	SM6
HN1B04FE-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + NPN TR VCEO:-50 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存23,994	150mA	50V	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN1C01FE-GR-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN + NPN TR VCEO:50V Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存23,886	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
TPCP8901-TE85L-F-M	Toshiba Semiconductor and Storage	TRANS NPN/PNP 50V 1A PS8 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 1A, 800mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V Power - Max: 1.48W Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: PS-8	封裝: -	Request a Quote	1A, 800mA	50V	170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA	100nA (ICBO)	400 @ 100mA, 2V / 200 @ 100mA, 2V	1.48W	-	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	PS-8
HN1A01FU-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + PNP TR VCEO:-50 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存17,934	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200mW	80MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN1B01FU-GR-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + NPN TR VCEO:-50 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 120MHz, 150MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存17,844	150mA	50V	300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	200mW	120MHz, 150MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN1C01FU-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN + NPN TR VCEO:50V Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存17,910	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200mW	80MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN1C01FU-GR-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN + NPN TR VCEO:50V Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存18,000	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	200mW	80MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
ULN2004AFWG-N-E	Toshiba Semiconductor and Storage	IC PWR RELAY 7NPN 1:1 16SOL Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA Current - Collector Cutoff (Max): - DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.25W Frequency - Transition: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOL	封裝: -	Request a Quote	500mA	50V	1.6V @ 500µA, 350mA	-	1000 @ 350mA, 2V	1.25W	-	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOL
HN1B04FE-GR-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + NPN TR VCEO:-50 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存7,059	150mA	50V	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN1A01FE-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + PNP TR VCEO:-50 Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存23,994	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN1B04FU-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + NPN TR VCEO:-50 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz, 120MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存17,850	150mA	50V	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200mW	150MHz, 120MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN1A01FU-GR-LF	Toshiba Semiconductor and Storage	TRANS 2PNP 50V 0.15A US6-PLN Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 80MHz Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	Request a Quote	150mA	50V	300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	200mW	80MHz	125°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN1B04FU-GR-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + NPN TR VCEO:-50 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 150MHz, 120MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存17,994	150mA	50V	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA	100nA (ICBO)	200 @ 2mA, 6V	200mW	150MHz, 120MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN1C01FE-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN + NPN TR VCEO:50V Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	庫存23,994	150mA	50V	250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	100mW	80MHz	150°C (TJ)	Surface Mount	SOT-563, SOT-666	ES6
HN1B01FU-Y-LXHF	Toshiba Semiconductor and Storage	AUTO AEC-Q PNP + NPN TR VCEO:-50 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 200mW Frequency - Transition: 120MHz, 150MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存17,634	150mA	50V	300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA	100nA (ICBO)	120 @ 2mA, 6V	200mW	120MHz, 150MHz	-	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
HN4B102J-TE85L-F	Toshiba Semiconductor and Storage	PB-F POWER TRANSISTOR SMV MOQ=30 Transistor Type: 1 NPN, 1 PNP Current - Collector (Ic) (Max): 1.8A, 2A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V Power - Max: 750mW Frequency - Transition: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封裝: -	庫存8,646	1.8A, 2A	30V	140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA	100nA (ICBO)	200 @ 200mA, 2V	750mW	-	150°C (TJ)	Surface Mount	SC-74A, SOT-753	SMV

HN2C01FU-GR(T5L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A US6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存28,278

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

200mW

80MHz

125°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN2A01FU-Y(TE85L,F

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A US6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存28,752

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

200mW

80MHz

125°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN4C06J-BL(TE85L,F

Toshiba Semiconductor and Storage

TRANS 2 NPN 120V 100MA SC74A

Transistor Type: 2 NPN (Dual) Common Emitter
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封裝: SC-74A, SOT-753

庫存23,004

100mA

120V

300mV @ 1mA, 10mA

100nA (ICBO)

200 @ 2mA, 6V

300mW

100MHz

150°C (TJ)

Surface Mount

SC-74A, SOT-753

SMV

HN4A56JU(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2 PNP 50V 150MA 5TSSOP

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封裝: 5-TSSOP, SC-70-5, SOT-353

庫存43,644

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

200mW

60MHz

150°C (TJ)

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

HN1C01FE-GR,LF

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存28,986

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

HN1C01FE-Y,LF

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A ES6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存35,664

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

HN1A01FE-Y,LF

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A ES6

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存70,218

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

HN1B04FE-Y,LF

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 0.15A ES6

Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: SOT-563, SOT-666

庫存34,614

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

HN1A01FE-GR-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存23,076

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

TPCP8701-TE85L-F-M

Toshiba Semiconductor and Storage

TRANS 2NPN 80V 3A PS8

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 300mA, 2V
Power - Max: 1.77W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8

封裝: -

Request a Quote

3A

80V

140mV @ 20mA, 1A

100nA (ICBO)

400 @ 300mA, 2V

1.77W

-

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

PS-8

HN1C03FU-B-LF

Toshiba Semiconductor and Storage

NPN + NPN IND. TRANSISTOR VCEO20

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V
Power - Max: 200mW
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存16,884

300mA

20V

100mV @ 3mA, 30A

100nA (ICBO)

350 @ 4mA, 2V

200mW

30MHz

150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN1C01F-GR-TE85L-F

Toshiba Semiconductor and Storage

TRANS 2NPN 50V 0.15A SM6

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 300mW
Frequency - Transition: 800MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

封裝: -

Request a Quote

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

300mW

800MHz

125°C (TJ)

Surface Mount

SC-74, SOT-457

SM6

HN1B04FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存23,994

150mA

50V

250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

HN1C01FE-GR-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + NPN TR VCEO:50V

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存23,886

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

TPCP8901-TE85L-F-M

Toshiba Semiconductor and Storage

TRANS NPN/PNP 50V 1A PS8

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 1A, 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100mA, 2V / 200 @ 100mA, 2V
Power - Max: 1.48W
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: PS-8

封裝: -

Request a Quote

1A, 800mA

50V

170mV @ 6mA, 300mA / 200mV @ 10mA, 300mA

100nA (ICBO)

400 @ 100mA, 2V / 200 @ 100mA, 2V

1.48W

-

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

PS-8

HN1A01FU-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存17,934

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

200mW

80MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN1B01FU-GR-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 120MHz, 150MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存17,844

150mA

50V

300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

200mW

120MHz, 150MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN1C01FU-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + NPN TR VCEO:50V

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存17,910

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

200mW

80MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN1C01FU-GR-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + NPN TR VCEO:50V

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存18,000

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

200mW

80MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

ULN2004AFWG-N-E

Toshiba Semiconductor and Storage

IC PWR RELAY 7NPN 1:1 16SOL

Transistor Type: 7 NPN Darlington
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
Power - Max: 1.25W
Frequency - Transition: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOL

封裝: -

Request a Quote

500mA

50V

1.6V @ 500µA, 350mA

-

1000 @ 350mA, 2V

1.25W

-

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOL

HN1B04FE-GR-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存7,059

150mA

50V

250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

HN1A01FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存23,994

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

HN1B04FU-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 150MHz, 120MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存17,850

150mA

50V

250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

200mW

150MHz, 120MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN1A01FU-GR-LF

Toshiba Semiconductor and Storage

TRANS 2PNP 50V 0.15A US6-PLN

Transistor Type: 2 PNP (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

Request a Quote

150mA

50V

300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

200mW

80MHz

125°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN1B04FU-GR-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 150MHz, 120MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存17,994

150mA

50V

250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA

100nA (ICBO)

200 @ 2mA, 6V

200mW

150MHz, 120MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN1C01FE-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN + NPN TR VCEO:50V

Transistor Type: 2 NPN (Dual)
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 100mW
Frequency - Transition: 80MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

庫存23,994

150mA

50V

250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

100mW

80MHz

150°C (TJ)

Surface Mount

SOT-563, SOT-666

ES6

HN1B01FU-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + NPN TR VCEO:-50

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 200mW
Frequency - Transition: 120MHz, 150MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存17,634

150mA

50V

300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA

100nA (ICBO)

120 @ 2mA, 6V

200mW

120MHz, 150MHz

-

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

HN4B102J-TE85L-F

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR SMV MOQ=30

Transistor Type: 1 NPN, 1 PNP
Current - Collector (Ic) (Max): 1.8A, 2A
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 200mA, 2V
Power - Max: 750mW
Frequency - Transition: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封裝: -

庫存8,646

1.8A, 2A

30V

140mV @ 20mA, 600mA / 200mV @ 20mA, 600mA

100nA (ICBO)

200 @ 200mA, 2V

750mW

-

150°C (TJ)

Surface Mount

SC-74A, SOT-753

SMV