頁 10 - Toshiba Semiconductor and Storage 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1SS388(TL3,F,D)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 45V 100MA ESC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 10V Capacitance @ Vr, F: 18pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: ESC Operating Temperature - Junction: -40°C ~ 100°C	封裝: SC-79, SOD-523	庫存92,400	45V	100mA	600mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 10V	18pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	-40°C ~ 100°C
CLS03,LNITTOQ(O	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存2,176	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS03(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存3,616	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS03(TE16L,SQC,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存7,472	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS03(TE16L,PSD,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存2,416	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS03(TE16L,PCD,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存2,112	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS03(TE16L,DNSO,Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存5,856	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS03(T6L,SHINA,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存4,448	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS03(T6L,CANO-O,Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: 345pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存3,952	60V	10A (DC)	0.58V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	345pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS02(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存7,600	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS02(TE16L,SQC,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存6,976	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS02(TE16L,HIT,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存7,296	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS02(T6L,CLAR,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存2,208	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS02(T6L,CANO-O,Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 420pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存7,632	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C
CLS01,LFJFQ(O	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 125°C	封裝: L-FLAT?	庫存5,376	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT?	L-FLAT? (4x5.5)	-40°C ~ 125°C

1SS388(TL3,F,D)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 45V 100MA ESC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 600mV @ 50mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 10V
Capacitance @ Vr, F: 18pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: ESC
Operating Temperature - Junction: -40°C ~ 100°C

封裝: SC-79, SOD-523

庫存92,400

45V

100mA

600mV @ 50mA

Small Signal =< 200mA (Io), Any Speed

-

5µA @ 10V

18pF @ 0V, 1MHz

Surface Mount

SC-79, SOD-523

ESC

-40°C ~ 100°C

CLS03,LNITTOQ(O

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存2,176

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS03(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存3,616

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS03(TE16L,SQC,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存7,472

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS03(TE16L,PSD,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存2,416

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS03(TE16L,PCD,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存2,112

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS03(TE16L,DNSO,Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存5,856

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS03(T6L,SHINA,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存4,448

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS03(T6L,CANO-O,Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 60V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.58V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: 345pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存3,952

60V

10A (DC)

0.58V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

345pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS02(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 420pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存7,600

40V

10A (DC)

0.55V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

420pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS02(TE16L,SQC,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 420pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存6,976

40V

10A (DC)

0.55V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

420pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS02(TE16L,HIT,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 420pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存7,296

40V

10A (DC)

0.55V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

420pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS02(T6L,CLAR,Q)

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 420pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存2,208

40V

10A (DC)

0.55V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

420pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS02(T6L,CANO-O,Q

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.55V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 420pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存7,632

40V

10A (DC)

0.55V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

420pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C

CLS01,LFJFQ(O

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 10A L-FLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 30V
Capacitance @ Vr, F: 530pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 125°C

封裝: L-FLAT?

庫存5,376

30V

10A (DC)

0.47V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 30V

530pF @ 10V, 1MHz

Surface Mount

L-FLAT?

L-FLAT? (4x5.5)

-40°C ~ 125°C