頁 6 - ON Semiconductor 產品 - 電晶體 - IGBT - 單

零件編號	製造商	描述	封裝	庫存	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
NGTB15N120IHTG	ON Semiconductor	IGBT 1200V 15A BIPOLAR TO247 IGBT Type: - Voltage - Collector Emitter Breakdown (Max): - Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): - Vce(on) (Max) @ Vge, Ic: - Power - Max: - Switching Energy: - Input Type: - Gate Charge: - Td (on/off) @ 25°C: - Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,096	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGTB30N60SWG	ON Semiconductor	IGBT 600V 60A 189W TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 120A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 189W Switching Energy: 750µJ (on), 540µJ (off) Input Type: Standard Gate Charge: 90nC Td (on/off) @ 25°C: 57ns/109ns Test Condition: 400V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存3,072	600V	60A	120A	2.2V @ 15V, 30A	189W	750µJ (on), 540µJ (off)	Standard	90nC	57ns/109ns	400V, 30A, 10 Ohm, 15V	200ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB50N60FLWG	ON Semiconductor	IGBT 600V 50A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 223W Switching Energy: 1.1mJ (on), 600µJ (off) Input Type: Standard Gate Charge: 310nC Td (on/off) @ 25°C: 116ns/292ns Test Condition: 400V, 50A, 10 Ohm, 15V Reverse Recovery Time (trr): 85ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存4,560	600V	100A	200A	1.9V @ 15V, 50A	223W	1.1mJ (on), 600µJ (off)	Standard	310nC	116ns/292ns	400V, 50A, 10 Ohm, 15V	85ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB40N60IHLWG	ON Semiconductor	IGBT 600V 40A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Power - Max: 250W Switching Energy: 400µJ (off) Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25°C: 70ns/140ns Test Condition: 400V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 400ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存4,848	600V	80A	200A	2.4V @ 15V, 40A	250W	400µJ (off)	Standard	130nC	70ns/140ns	400V, 40A, 10 Ohm, 15V	400ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB40N120LWG	ON Semiconductor	IGBT 1200V 40A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 320A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Power - Max: 260W Switching Energy: 5.5mJ (on), 1.4mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 140ns/360ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存5,456	1200V	80A	320A	2.35V @ 15V, 40A	260W	5.5mJ (on), 1.4mJ (off)	Standard	420nC	140ns/360ns	600V, 40A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB40N120IHLWG	ON Semiconductor	IGBT 1200V 40A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 320A Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Power - Max: 260W Switching Energy: 1.4mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: -/360ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存3,616	1200V	80A	320A	2.35V @ 15V, 40A	260W	1.4mJ (off)	Standard	420nC	-/360ns	600V, 40A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB40N120FLWG	ON Semiconductor	IGBT 1200V 40A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 80A Current - Collector Pulsed (Icm): 160A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A Power - Max: 260W Switching Energy: 2.6mJ (on), 1.6mJ (off) Input Type: Standard Gate Charge: 415nC Td (on/off) @ 25°C: 130ns/385ns Test Condition: 600V, 40A, 10 Ohm, 15V Reverse Recovery Time (trr): 200ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存6,080	1200V	80A	160A	2.2V @ 15V, 40A	260W	2.6mJ (on), 1.6mJ (off)	Standard	415nC	130ns/385ns	600V, 40A, 10 Ohm, 15V	200ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
NGTB30N120LWG	ON Semiconductor	IGBT 1200V 30A TO247 IGBT Type: Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 60A Current - Collector Pulsed (Icm): 240A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A Power - Max: 560W Switching Energy: 4.4mJ (on), 1mJ (off) Input Type: Standard Gate Charge: 420nC Td (on/off) @ 25°C: 136ns/360ns Test Condition: 600V, 30A, 10 Ohm, 15V Reverse Recovery Time (trr): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: TO-247-3	庫存6,496	1200V	60A	240A	2.2V @ 15V, 30A	560W	4.4mJ (on), 1mJ (off)	Standard	420nC	136ns/360ns	600V, 30A, 10 Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247