Microchip Technology 產品 - 電晶體 - FET、MOSFET - 單

MCP87022T-U/MF

Microchip Technology

MOSFET N-CH 25V 8PDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 12.5V
• Vgs (Max): +10V, -8V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta)
• Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5x6)
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

TN2510N8-G

Microchip Technology

MOSFET N-CH 100V 730MA SOT89-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-243AA (SOT-89)
• Package / Case: TO-243AA

封裝: TO-243AA

TP5335K1-G

Microchip Technology

MOSFET P-CH 350V 0.085A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 350V
• Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 30 Ohm @ 200mA, 10V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

TP0610T-G

Microchip Technology

MOSFET P-CH 60V 0.12A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 200mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

DN2450N8-G

Microchip Technology

MOSFET N-CH 500V 0.23A SOT89-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 300mA, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-243AA (SOT-89)
• Package / Case: TO-243AA

封裝: TO-243AA

TN2124K1-G

Microchip Technology

MOSFET N-CH 240V 0.134A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 134mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Tc)
• Rds On (Max) @ Id, Vgs: 15 Ohm @ 120mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

VN0109N3-G

Microchip Technology

MOSFET N-CH 90V 0.35A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 90V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

DN2450K4-G

Microchip Technology

MOSFET N-CH 500V 350MA 3DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 10 Ohm @ 300mA, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

TP2104K1-G

Microchip Technology

MOSFET P-CH 40V 0.16A SOT23-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB (SOT23)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

DN1509K1-G

Microchip Technology

MOSFET N-CH 90V 0.2A SOT23-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 90V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 0V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Depletion Mode
• Power Dissipation (Max): 490mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 200mA, 0V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-5
• Package / Case: SC-74A, SOT-753

封裝: SC-74A, SOT-753

MCP87055T-U/LC

Microchip Technology

MOSFET N-CH 25V 8PDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 12.5V
• Vgs (Max): +10V, -8V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (3x3)
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

MCP87090T-U/MF

Microchip Technology

MOSFET N-CH 25V 8PDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 12.5V
• Vgs (Max): +10V, -8V
• FET Feature: -
• Power Dissipation (Max): 2.2W (Ta)
• Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5x6)
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

MCP87090T-U/LC

Microchip Technology

MOSFET N-CH 25V 8PDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 12.5V
• Vgs (Max): +10V, -8V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (3x3)
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

MIC94050YM4-TR

Microchip Technology

MOSFET P-CH 6V 1.8A SOT-143

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 6V
• Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 5.5V
• Vgs (Max): 6V
• FET Feature: -
• Power Dissipation (Max): 568mW (Ta)
• Rds On (Max) @ Id, Vgs: 160 mOhm @ 100mA, 4.5V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-143
• Package / Case: TO-253-4, TO-253AA

封裝: TO-253-4, TO-253AA

MCP87130T-U/MF

Microchip Technology

MOSFET N-CH 25V 8PDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
• Vgs(th) (Max) @ Id: 1.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 12.5V
• Vgs (Max): +10V, -8V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta)
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5x6)
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

MCP87130T-U/LC

Microchip Technology

MOSFET N-CH 25V 8PDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
• Vgs(th) (Max) @ Id: 1.7V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 12.5V
• Vgs (Max): +10V, -8V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta)
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (3x3)
• Package / Case: 8-PowerTDFN

封裝: 8-PowerTDFN

VP2450N8-G

Microchip Technology

MOSFET P-CH 500V 0.16A SOT89-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-243AA (SOT-89)
• Package / Case: TO-243AA

封裝: TO-243AA

2N7002-G

Microchip Technology

MOSFET N-CH 60V 0.115A SOT23-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 115mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23 (TO-236AB)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

TP2535N3-G

Microchip Technology

MOSFET P-CH 350V 0.086A TO92-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 350V
• Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 740mW (Ta)
• Rds On (Max) @ Id, Vgs: 25 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

VN2224N3-G

Microchip Technology

MOSFET N-CH 240V 540MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 240V
• Current - Continuous Drain (Id) @ 25°C: 540mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

TP2640N3-G

Microchip Technology

MOSFET P-CH 400V 0.18A TO92-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 15 Ohm @ 300mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

VN1206L-G

Microchip Technology

MOSFET N-CH 120V 0.23A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 120V
• Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

VN4012L-G

Microchip Technology

MOSFET N-CH 400V 0.16A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 12 Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

VN0550N3-G

Microchip Technology

MOSFET N-CH 500V 50MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 60 Ohm @ 50mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

VN0606L-G

Microchip Technology

MOSFET N-CH 60V 330MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

VN2460N3-G

Microchip Technology

MOSFET N-CH 600V 0.16A TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 20 Ohm @ 100mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

TN0110N3-G

Microchip Technology

MOSFET N-CH 100V 350MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)

VP0109N3-G

Microchip Technology

MOSFET P-CH 90V 0.25A TO92-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 90V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1W (Tc)
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-92-3
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)

封裝: TO-226-3, TO-92-3 (TO-226AA)