Microchip Technology 產品 - 電晶體 - FET、MOSFET - 單

CC1202

Microchip Technology

MOSFET N-CH 800V 13A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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MOSFET (Metal Oxide)

800 V

-

APT20M22JVR

Microchip Technology

MOSFET N-CH 200V 97A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封裝: -

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MOSFET (Metal Oxide)

200 V

97A (Tc)

-

4V @ 2.5mA

435 nC @ 10 V

10200 pF @ 25 V

-

22mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT8015JVR

Microchip Technology

MOSFET N-CH 800V 44A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封裝: -

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MOSFET (Metal Oxide)

800 V

44A (Tc)

-

4V @ 5mA

285 nC @ 10 V

17650 pF @ 25 V

-

150mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT6011B2VRG

Microchip Technology

MOSFET N-CH 600V 49A T-MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 110mOhm @ 24.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant

封裝: -

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MOSFET (Metal Oxide)

600 V

49A (Tc)

-

4V @ 2.5mA

450 nC @ 10 V

8900 pF @ 25 V

-

110mOhm @ 24.5A, 10V

-

Through Hole

T-MAX™ [B2]

TO-247-3 Variant

APT5018SLLG

Microchip Technology

MOSFET N-CH 500V 27A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

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MOSFET (Metal Oxide)

500 V

27A (Tc)

-

5V @ 1mA

58 nC @ 10 V

2596 pF @ 25 V

-

180mOhm @ 13.5A, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT8052BFLLG

Microchip Technology

MOSFET N-CH 800V 15A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封裝: -

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MOSFET (Metal Oxide)

800 V

15A (Tc)

-

5V @ 1mA

75 nC @ 10 V

2035 pF @ 25 V

-

520mOhm @ 7.5A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

MSC130SM120JCU2

Microchip Technology

SICFET N-CH 1.2KV 173A SOT227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 745W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

封裝: -

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SiCFET (Silicon Carbide)

1200 V

173A (Tc)

20V

2.8V @ 2mA

464 nC @ 20 V

6040 pF @ 1000 V

+25V, -10V

-

745W (Tc)

16mOhm @ 80A, 20V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

MSC130SM120JCU3

Microchip Technology

SICFET N-CH 1.2KV 173A SOT227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 745W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

封裝: -

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SiCFET (Silicon Carbide)

1200 V

173A (Tc)

20V

2.8V @ 2mA

464 nC @ 20 V

6040 pF @ 1000 V

+25V, -10V

-

745W (Tc)

16mOhm @ 80A, 20V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

MSC750SMA170S

Microchip Technology

TRANS SJT 1700V D3PAK

FET Type: -
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

庫存1,548

SiCFET (Silicon Carbide)

1700 V

6A (Tc)

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

MSC750SMA170B

Microchip Technology

SICFET N-CH 1700V 7A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V
Vgs (Max): +23V, -10V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封裝: -

庫存750

SiCFET (Silicon Carbide)

1700 V

7A (Tc)

20V

3.25V @ 100µA (Typ)

11 nC @ 20 V

184 pF @ 1360 V

+23V, -10V

-

68W (Tc)

940mOhm @ 2.5A, 20V

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

APT8065SVRG

Microchip Technology

MOSFET N-CH 800V 13A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

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MOSFET (Metal Oxide)

800 V

13A (Tc)

-

4V @ 1mA

225 nC @ 10 V

3700 pF @ 25 V

-

650mOhm @ 500mA, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT6010LFLLG

Microchip Technology

MOSFET N-CH 600V 54A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

封裝: -

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MOSFET (Metal Oxide)

600 V

54A (Tc)

-

5V @ 2.5mA

150 nC @ 10 V

6710 pF @ 25 V

-

100mOhm @ 27A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

MRH15N19U3SR

Microchip Technology

RH MOSFET 150V U3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U3 (SMD-0.5)
Package / Case: 3-SMD, No Lead

封裝: -

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MOSFET (Metal Oxide)

150 V

19A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

2140 pF @ 25 V

±20V

-

75W (Tc)

88mOhm @ 12A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

U3 (SMD-0.5)

3-SMD, No Lead

APT10035JFLL

Microchip Technology

MOSFET N-CH 1000V 25A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 520W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封裝: -

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MOSFET (Metal Oxide)

1000 V

25A (Tc)

-

5V @ 2.5mA

186 nC @ 10 V

5185 pF @ 25 V

-

520W (Tc)

370mOhm @ 14A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT10M19BVRG

Microchip Technology

MOSFET N-CH 100V 75A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封裝: -

庫存111

MOSFET (Metal Oxide)

100 V

75A (Tc)

-

4V @ 1mA

300 nC @ 10 V

6120 pF @ 25 V

-

19mOhm @ 500mA, 10V

-

Through Hole

TO-247 [B]

TO-247-3

MSC40SM120JCU3

Microchip Technology

SICFET N-CH 1.2KV 55A SOT227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

封裝: -

庫存129

SiCFET (Silicon Carbide)

1200 V

55A (Tc)

20V

2.7V @ 1mA

137 nC @ 20 V

1990 pF @ 1000 V

+25V, -10V

-

245W (Tc)

50mOhm @ 40A, 20V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

MSC40SM120JCU2

Microchip Technology

SICFET N-CH 1.2KV 55A SOT227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 245W (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

封裝: -

庫存51

SiCFET (Silicon Carbide)

1200 V

55A (Tc)

20V

2.7V @ 1mA

137 nC @ 20 V

1990 pF @ 1000 V

+25V, -10V

-

245W (Tc)

50mOhm @ 40A, 20V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

MSC060SMA070S

Microchip Technology

SICFET N-CH 700V 37A D3PAK

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.4V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
Vgs (Max): +23V, -10V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

庫存141

SiCFET (Silicon Carbide)

700 V

37A (Tc)

20V

2.4V @ 1mA (Typ)

56 nC @ 20 V

1175 pF @ 700 V

+23V, -10V

-

130W (Tc)

75mOhm @ 20A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

MSC060SMA070B

Microchip Technology

SICFET N-CH 700V 39A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V
Vgs (Max): +23V, -10V
FET Feature: -
Power Dissipation (Max): 143W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

封裝: -

庫存33

SiCFET (Silicon Carbide)

700 V

39A (Tc)

20V

2.4V @ 1mA

56 nC @ 20 V

1175 pF @ 700 V

+23V, -10V

-

143W (Tc)

75mOhm @ 20A, 20V

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

APT10050B2VFRG

Microchip Technology

MOSFET N-CH 1000V 21A T-MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant

封裝: -

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MOSFET (Metal Oxide)

1000 V

21A (Tc)

-

4V @ 2.5mA

500 nC @ 10 V

7900 pF @ 25 V

-

500mOhm @ 500mA, 10V

-

Through Hole

T-MAX™ [B2]

TO-247-3 Variant

MSCSM120DAM31CTBL1NG

Microchip Technology

PM-MOSFET-SIC-SBD-BL1

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 79A
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 310W
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: -
Package / Case: Module

封裝: -

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SiCFET (Silicon Carbide)

1200 V

79A

20V

2.8V @ 1mA

232 nC @ 20 V

3020 pF @ 1000 V

+25V, -10V

-

310W

31mOhm @ 40A, 20V

-55°C ~ 175°C (TJ)

Chassis Mount

-

Module

APT18M100S

Microchip Technology

MOSFET N-CH 1000V 18A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 625W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封裝: -

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MOSFET (Metal Oxide)

1000 V

18A (Tc)

10V

5V @ 1mA

150 nC @ 10 V

4845 pF @ 25 V

±30V

-

625W (Tc)

700mOhm @ 9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT6025BFLLG

Microchip Technology

MOSFET N-CH 600V 24A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封裝: -

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MOSFET (Metal Oxide)

600 V

24A (Tc)

-

5V @ 1mA

65 nC @ 10 V

2910 pF @ 25 V

-

250mOhm @ 12A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

APT8020JFLL

Microchip Technology

MOSFET N-CH 800V 33A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 220mOhm @ 16.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

封裝: -

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MOSFET (Metal Oxide)

800 V

33A (Tc)

-

5V @ 2.5mA

195 nC @ 10 V

5200 pF @ 25 V

-

220mOhm @ 16.5A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

APT8020B2FLLG

Microchip Technology

MOSFET N-CH 800V 38A T-MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant

封裝: -

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MOSFET (Metal Oxide)

800 V

38A (Tc)

-

5V @ 2.5mA

195 nC @ 10 V

5200 pF @ 25 V

-

220mOhm @ 19A, 10V

-

Through Hole

T-MAX™ [B2]

TO-247-3 Variant

APT6038BLLG

Microchip Technology

MOSFET N-CH 600V 17A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封裝: -

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MOSFET (Metal Oxide)

600 V

17A (Tc)

-

5V @ 1mA

43 nC @ 10 V

1850 pF @ 25 V

-

380mOhm @ 8.5A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

MRH25N12U3SR

Microchip Technology

RH MOSFET 250V U3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: U3 (SMD-0.5)
Package / Case: 3-SMD, No Lead

封裝: -

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MOSFET (Metal Oxide)

250 V

12.4A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

1980 pF @ 25 V

±20V

-

75W (Tc)

210mOhm @ 7.8A, 12V

-55°C ~ 150°C (TJ)

Surface Mount

U3 (SMD-0.5)

3-SMD, No Lead

APT5014BFLLG

Microchip Technology

MOSFET N-CH 500V 35A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

封裝: -

Request a Quote

MOSFET (Metal Oxide)

500 V

35A (Tc)

-

5V @ 1mA

72 nC @ 10 V

3261 pF @ 25 V

-

140mOhm @ 17.5A, 10V

-

Through Hole

TO-247 [B]

TO-247-3

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
CC1202	Microchip Technology	MOSFET N-CH 800V 13A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	MOSFET (Metal Oxide)	800 V	-	-	-	-	-	-	-	-	-	-	-	-	-
APT20M22JVR	Microchip Technology	MOSFET N-CH 200V 97A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 435 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10200 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封裝: -	Request a Quote	MOSFET (Metal Oxide)	200 V	97A (Tc)	-	4V @ 2.5mA	435 nC @ 10 V	10200 pF @ 25 V	-	-	-	22mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT8015JVR	Microchip Technology	MOSFET N-CH 800V 44A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17650 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封裝: -	Request a Quote	MOSFET (Metal Oxide)	800 V	44A (Tc)	-	4V @ 5mA	285 nC @ 10 V	17650 pF @ 25 V	-	-	-	150mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT6011B2VRG	Microchip Technology	MOSFET N-CH 600V 49A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 110mOhm @ 24.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	49A (Tc)	-	4V @ 2.5mA	450 nC @ 10 V	8900 pF @ 25 V	-	-	-	110mOhm @ 24.5A, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT5018SLLG	Microchip Technology	MOSFET N-CH 500V 27A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2596 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 180mOhm @ 13.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	500 V	27A (Tc)	-	5V @ 1mA	58 nC @ 10 V	2596 pF @ 25 V	-	-	-	180mOhm @ 13.5A, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT8052BFLLG	Microchip Technology	MOSFET N-CH 800V 15A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 520mOhm @ 7.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	800 V	15A (Tc)	-	5V @ 1mA	75 nC @ 10 V	2035 pF @ 25 V	-	-	-	520mOhm @ 7.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
MSC130SM120JCU2	Microchip Technology	SICFET N-CH 1.2KV 173A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 745W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	封裝: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	173A (Tc)	20V	2.8V @ 2mA	464 nC @ 20 V	6040 pF @ 1000 V	+25V, -10V	-	745W (Tc)	16mOhm @ 80A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
MSC130SM120JCU3	Microchip Technology	SICFET N-CH 1.2KV 173A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 745W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	封裝: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	173A (Tc)	20V	2.8V @ 2mA	464 nC @ 20 V	6040 pF @ 1000 V	+25V, -10V	-	745W (Tc)	16mOhm @ 80A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
MSC750SMA170S	Microchip Technology	TRANS SJT 1700V D3PAK FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	庫存1,548	SiCFET (Silicon Carbide)	1700 V	6A (Tc)	-	-	-	-	-	-	-	-	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC750SMA170B	Microchip Technology	SICFET N-CH 1700V 7A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.25V @ 100µA (Typ) Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 1360 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 2.5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封裝: -	庫存750	SiCFET (Silicon Carbide)	1700 V	7A (Tc)	20V	3.25V @ 100µA (Typ)	11 nC @ 20 V	184 pF @ 1360 V	+23V, -10V	-	68W (Tc)	940mOhm @ 2.5A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
APT8065SVRG	Microchip Technology	MOSFET N-CH 800V 13A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 650mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	800 V	13A (Tc)	-	4V @ 1mA	225 nC @ 10 V	3700 pF @ 25 V	-	-	-	650mOhm @ 500mA, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6010LFLLG	Microchip Technology	MOSFET N-CH 600V 54A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6710 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 100mOhm @ 27A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	54A (Tc)	-	5V @ 2.5mA	150 nC @ 10 V	6710 pF @ 25 V	-	-	-	100mOhm @ 27A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
MRH15N19U3SR	Microchip Technology	RH MOSFET 150V U3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 12A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U3 (SMD-0.5) Package / Case: 3-SMD, No Lead	封裝: -	Request a Quote	MOSFET (Metal Oxide)	150 V	19A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	2140 pF @ 25 V	±20V	-	75W (Tc)	88mOhm @ 12A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	U3 (SMD-0.5)	3-SMD, No Lead
APT10035JFLL	Microchip Technology	MOSFET N-CH 1000V 25A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5185 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 520W (Tc) Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封裝: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	25A (Tc)	-	5V @ 2.5mA	186 nC @ 10 V	5185 pF @ 25 V	-	-	520W (Tc)	370mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT10M19BVRG	Microchip Technology	MOSFET N-CH 100V 75A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 19mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封裝: -	庫存111	MOSFET (Metal Oxide)	100 V	75A (Tc)	-	4V @ 1mA	300 nC @ 10 V	6120 pF @ 25 V	-	-	-	19mOhm @ 500mA, 10V	-	Through Hole	TO-247 [B]	TO-247-3
MSC40SM120JCU3	Microchip Technology	SICFET N-CH 1.2KV 55A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	封裝: -	庫存129	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	20V	2.7V @ 1mA	137 nC @ 20 V	1990 pF @ 1000 V	+25V, -10V	-	245W (Tc)	50mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
MSC40SM120JCU2	Microchip Technology	SICFET N-CH 1.2KV 55A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	封裝: -	庫存51	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	20V	2.7V @ 1mA	137 nC @ 20 V	1990 pF @ 1000 V	+25V, -10V	-	245W (Tc)	50mOhm @ 40A, 20V	-55°C ~ 150°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
MSC060SMA070S	Microchip Technology	SICFET N-CH 700V 37A D3PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	庫存141	SiCFET (Silicon Carbide)	700 V	37A (Tc)	20V	2.4V @ 1mA (Typ)	56 nC @ 20 V	1175 pF @ 700 V	+23V, -10V	-	130W (Tc)	75mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
MSC060SMA070B	Microchip Technology	SICFET N-CH 700V 39A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 700 V Vgs (Max): +23V, -10V FET Feature: - Power Dissipation (Max): 143W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	封裝: -	庫存33	SiCFET (Silicon Carbide)	700 V	39A (Tc)	20V	2.4V @ 1mA	56 nC @ 20 V	1175 pF @ 700 V	+23V, -10V	-	143W (Tc)	75mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
APT10050B2VFRG	Microchip Technology	MOSFET N-CH 1000V 21A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	封裝: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	21A (Tc)	-	4V @ 2.5mA	500 nC @ 10 V	7900 pF @ 25 V	-	-	-	500mOhm @ 500mA, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
MSCSM120DAM31CTBL1NG	Microchip Technology	PM-MOSFET-SIC-SBD-BL1 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 79A Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 310W Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: - Package / Case: Module	封裝: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	79A	20V	2.8V @ 1mA	232 nC @ 20 V	3020 pF @ 1000 V	+25V, -10V	-	310W	31mOhm @ 40A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	-	Module
APT18M100S	Microchip Technology	MOSFET N-CH 1000V 18A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 625W (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	18A (Tc)	10V	5V @ 1mA	150 nC @ 10 V	4845 pF @ 25 V	±30V	-	625W (Tc)	700mOhm @ 9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT6025BFLLG	Microchip Technology	MOSFET N-CH 600V 24A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 250mOhm @ 12A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	24A (Tc)	-	5V @ 1mA	65 nC @ 10 V	2910 pF @ 25 V	-	-	-	250mOhm @ 12A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
APT8020JFLL	Microchip Technology	MOSFET N-CH 800V 33A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 220mOhm @ 16.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	封裝: -	Request a Quote	MOSFET (Metal Oxide)	800 V	33A (Tc)	-	5V @ 2.5mA	195 nC @ 10 V	5200 pF @ 25 V	-	-	-	220mOhm @ 16.5A, 10V	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
APT8020B2FLLG	Microchip Technology	MOSFET N-CH 800V 38A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 220mOhm @ 19A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	封裝: -	Request a Quote	MOSFET (Metal Oxide)	800 V	38A (Tc)	-	5V @ 2.5mA	195 nC @ 10 V	5200 pF @ 25 V	-	-	-	220mOhm @ 19A, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT6038BLLG	Microchip Technology	MOSFET N-CH 600V 17A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 380mOhm @ 8.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	17A (Tc)	-	5V @ 1mA	43 nC @ 10 V	1850 pF @ 25 V	-	-	-	380mOhm @ 8.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3
MRH25N12U3SR	Microchip Technology	RH MOSFET 250V U3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250 V Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: U3 (SMD-0.5) Package / Case: 3-SMD, No Lead	封裝: -	Request a Quote	MOSFET (Metal Oxide)	250 V	12.4A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	1980 pF @ 25 V	±20V	-	75W (Tc)	210mOhm @ 7.8A, 12V	-55°C ~ 150°C (TJ)	Surface Mount	U3 (SMD-0.5)	3-SMD, No Lead
APT5014BFLLG	Microchip Technology	MOSFET N-CH 500V 35A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	500 V	35A (Tc)	-	5V @ 1mA	72 nC @ 10 V	3261 pF @ 25 V	-	-	-	140mOhm @ 17.5A, 10V	-	Through Hole	TO-247 [B]	TO-247-3