Infineon Technologies 產品

SGB06N60ATMA1

Infineon Technologies

IGBT 600V 12A 68W TO263-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 24A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A
• Power - Max: 68W
• Switching Energy: 215µJ
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 25ns/220ns
• Test Condition: 400V, 6A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4RC10KDPBF

Infineon Technologies

IGBT 600V 9A 38W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
• Power - Max: 38W
• Switching Energy: 250µJ (on), 140µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 49ns/97ns
• Test Condition: 480V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): 28ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRF4905S

Infineon Technologies

MOSFET P-CH 55V 42A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRLR014NTR

Infineon Technologies

MOSFET N-CH 55V 10A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 140 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

BSC020N03LSGATMA2

Infineon Technologies

LV POWER MOS

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封裝: -

IPN50R950CEATMA1

Infineon Technologies

CONSUMER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封裝: -

IRFB4321PBF

Infineon Technologies

MOSFET N-CH 150V 83A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4460pF @ 50V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 350W (Tc)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 33A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封裝: TO-220-3

IRAM256-1567A2

Infineon Technologies

IC MOD PWR HYBRID 600V 15A

• Type: IGBT
• Configuration: 3 Phase
• Current: 15A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads

封裝: 29-PowerSSIP Module, 21 Leads, Formed Leads

IRU1117CD

Infineon Technologies

IC REG LINEAR POS ADJ 800MA DPAK

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 3.6V
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 800mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IRU1010-33CSTR

Infineon Technologies

IC REG LINEAR 3.3V 1A 8SOIC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

TLE4279GXUMA2

Infineon Technologies

IC REG LINEAR 5V 100MA 8DSO

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 100mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

封裝: 8-SOIC (0.154", 3.90mm Width)

IR4426STRPBF

Infineon Technologies

IC DRIVER DUAL LOW SIDE 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 6 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 2.3A, 3.3A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 15ns, 10ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

ICE5QR4770AGXUMA1

Infineon Technologies

IC CTLR QUASI-RES 12SOIC

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 700V
• Topology: Flyback
• Voltage - Start Up: 16V
• Voltage - Supply (Vcc/Vdd): 10 V ~ 27 V
• Duty Cycle: -
• Frequency - Switching: -
• Power (Watts): 27W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: 16-SOIC (0.154", 3.90mm Width) 12 leads
• Supplier Device Package: PG-DSO-12
• Mounting Type: Surface Mount

封裝: 16-SOIC (0.154", 3.90mm Width) 12 leads

IRS20954STRPBF

Infineon Technologies

IC DVR DGTL AUDIO PROT 16-SOIC

• Function: -
• Applications: -
• Number of Channels: -
• Interface: -
• Voltage - Supply: -
• Operating Temperature: -
• Specifications: -
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

封裝: 16-SOIC (0.154", 3.90mm Width)

TLE493DA1B6HTSA1

Infineon Technologies

IC 3D MAGN SENSOR TSOP6-6

• Type: -
• Technology: -
• Axis: -
• Output Type: -
• Sensing Range: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Resolution: -
• Bandwidth: -
• Operating Temperature: -
• Features: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

XC2268M56F66LAAFXUMA1

Infineon Technologies

IC MCU 16BIT 100LQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

2ED2108S06FXUMA1

Infineon Technologies

IC HALF BRIDGE GATE DRIVER 650V

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10V ~ 20V
• Logic Voltage - VIL, VIH: 1.1V, 1.7V
• Current - Peak Output (Source, Sink): 290mA, 700mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 650 V
• Rise / Fall Time (Typ): 100ns, 35ns
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-53

封裝: -

S29GL256S90FHA023

Infineon Technologies

IC FLASH 256MBIT PARALLEL 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 90 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (13x11)

封裝: -

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FZ1000R33HE3BOSA1

Infineon Technologies

IGBT MODULE 3300V 1000A 1600W

• IGBT Type: Trench Field Stop
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (Max): 3300 V
• Current - Collector (Ic) (Max): 1000 A
• Power - Max: 1600 W
• Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
• Current - Collector Cutoff (Max): 5 mA
• Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -

封裝: -

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CY8C4548AZQ-S483

Infineon Technologies

IC MCU 32BIT 256KB FLASH 48TQFP

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 20x12b SAR; D/A 2x7/8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-TQFP (7x7)

封裝: -

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PEB2075NV1-3G

Infineon Technologies

ISDN D-CHANNEL EXCH. CONTROLLER

• Function: -
• Interface: -
• Number of Circuits: -
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

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IKB40N65ES5ATMA1

Infineon Technologies

IGBT TRENCH FS 650V 79A TO263-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 79 A
• Current - Collector Pulsed (Icm): 160 A
• Vce(on) (Max) @ Vge, Ic: 1.74V @ 15V, 40A
• Power - Max: 230 W
• Switching Energy: 860µJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 95 nC
• Td (on/off) @ 25°C: 19ns/130ns
• Test Condition: 400V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): 73 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

封裝: -

S25FL128SAGBHIC13

Infineon Technologies

STD SPI

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 128Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: 750µs
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

封裝: -

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FF600R17ME4PB11BOSA1

Infineon Technologies

IGBT MODULE VCES 1200V 600A

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 600 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 600A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 48 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封裝: -

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S26HL512TFPBHM010

Infineon Technologies

IC FLASH 512MBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封裝: -

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S26HS01GTFPBHI030

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: HyperBus
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 5.45 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

封裝: -

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IRLML5103TR

Infineon Technologies

MOSFET P-CH 30V 760MA SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 760mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: Micro3™/SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: -

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CY22050ZXC-126

Infineon Technologies

IC CLOCK GEN PROG 16-TSSOP

• Type: Clock Generator
• PLL: Yes with Bypass
• Input: Clock, Crystal
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 1:6
• Differential - Input:Output: No/No
• Frequency - Max: 200MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 2.375V ~ 2.625V, 3.135V ~ 3.465V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

封裝: -

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