頁 570 - Infineon Technologies 產品

零件編號	製造商	描述	封裝	庫存
IKW15T120FKSA1	Infineon Technologies	IGBT 1200V 30A 110W TO247-3 IGBT Type: NPT, Trench Field Stop Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 45A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Power - Max: 110W Switching Energy: 2.7mJ Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25°C: 50ns/520ns Test Condition: 600V, 15A, 56 Ohm, 15V Reverse Recovery Time (trr): 140ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	封裝: TO-247-3	庫存2,100
IRG7T300CL12B	Infineon Technologies	MOD IGBT 1200V 300A POWIR 62 IGBT Type: - Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 570A Power - Max: 1600W Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A Current - Collector Cutoff (Max): 4mA Input Capacitance (Cies) @ Vce: 42.4nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: POWIR? 62 Module Supplier Device Package: POWIR? 62	封裝: POWIR? 62 Module	庫存6,640
IRF7406GTRPBF	Infineon Technologies	MOSFET P-CH 30V 6.7A 8-SOIC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存141,936
IRF1324SPBF	Infineon Technologies	MOSFET N-CH 24V 195A D2-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	庫存5,040
IRF7703	Infineon Technologies	MOSFET P-CH 40V 6A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存2,464
IPN80R900P7ATMA1	Infineon Technologies	LOW POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存2,672
IPD60R1K4C6ATMA1	Infineon Technologies	MOSFET N-CH 600V 3.2A TO252-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 28.4W (Tc) Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封裝: TO-252-3, DPak (2 Leads + Tab), SC-63	庫存7,008
BC847BWH6327XTSA1	Infineon Technologies	TRANS NPN 45V 0.1A SOT323 Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Power - Max: 250mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: PG-SOT323-3	封裝: SC-70, SOT-323	庫存5,376
BAR6302LE6327XTMA1	Infineon Technologies	DIODE RF SGL 50V 100MA TSLP-2 Diode Type: PIN - Single Voltage - Peak Reverse (Max): 50V Current - Max: 100mA Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1 Ohm @ 10mA, 100MHz Power Dissipation (Max): 250mW Operating Temperature: 150°C (TJ) Package / Case: SOD-882 Supplier Device Package: PG-TSLP-2	封裝: SOD-882	庫存7,504
IRU1015CP	Infineon Technologies	IC REG LINEAR 1.5A UTHIN-2 Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 1.5A Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: 0°C ~ 150°C Mounting Type: Surface Mount Package / Case: 2-Ultra Thin-Pak Supplier Device Package: 2-Ultra Thin-Pak	封裝: 2-Ultra Thin-Pak	庫存6,752
BTS5230GS	Infineon Technologies	IC HIGH SIDE PWR SWITCH PDSO-14 Switch Type: General Purpose Number of Outputs: 2 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 4.5 V ~ 28 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.8A Rds On (Typ): 140 mOhm (Max) Input Type: Non-Inverting Features: Auto Restart, Status Flag Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Operating Temperature: -40°C ~ 150°C (TJ) Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: P-DSO-14	封裝: 14-SOIC (0.154", 3.90mm Width)	庫存73,608
IR4301MTRPBF	Infineon Technologies	IC AMP AUDIO MONO 160W PQFN22 Type: Class D Output Type: 1-Channel (Mono) Max Output Power x Channels @ Load: 160W x 1 @ 4 Ohm Voltage - Supply: 10 V ~ 15 V Features: Depop, Differential Inputs Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C (TA) Supplier Device Package: 22-PQFN (5x6) Package / Case: 22-PowerVQFN	封裝: 22-PowerVQFN	庫存116,268
PEB 3331 HT V2.2	Infineon Technologies	IC CODEC VOIP 100-TQFP Function: Voice Over IP Processor Interface: Parallel, PCM, Serial Number of Circuits: 1 Voltage - Supply: - Current - Supply: - Power (Watts): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: PG-TQFP-100	封裝: 100-LQFP	庫存3,312
SAA-XC886-8FFA 5V AC	Infineon Technologies	IC MCU 8BIT 32KB FLASH 48TQFP Core Processor: XC800 Core Size: 8-Bit Speed: 24MHz Connectivity: SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 34 Program Memory Size: 32KB (32K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 1.75K x 8 Voltage - Supply (Vcc/Vdd): 2.3 V ~ 5.5 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 140°C (TA) Mounting Type: - Package / Case: 48-TQFP Supplier Device Package: 48-TQFP (7x7)	封裝: 48-TQFP	庫存4,544
SAF-TC1115-L100EB-G BB	Infineon Technologies	IC MCU 32BIT ROMLESS 208LBGA Core Processor: TriCore? Core Size: 32-Bit Speed: 100MHz Connectivity: CAN, EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Number of I/O: 72 Program Memory Size: - Program Memory Type: ROMless EEPROM Size: - RAM Size: 144K x 8 Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V Data Converters: - Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 208-LBGA Supplier Device Package: P-LBGA-208-2	封裝: 208-LBGA	庫存7,456
PTMA180402FL V1 R250	Infineon Technologies	IC AMP RF LDMOS 40W H34265-8 Frequency: 1.8GHz ~ 2GHz P1dB: - Gain: 30dB Noise Figure: - RF Type: CDMA Voltage - Supply: - Current - Supply: - Test Frequency: - Package / Case: H-34265-8 Supplier Device Package: H-34265-8	封裝: H-34265-8	庫存8,460
S6J334EJTCSE2000A	Infineon Technologies	TRAVEO-40NM Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 240MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 150 Program Memory Size: 4.0625MB (4.0625M x 8) Program Memory Type: FLASH EEPROM Size: 112K x 8 RAM Size: 544K x 8 Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V Data Converters: A/D 48x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Supplier Device Package: 176-TEQFP (24x24)	封裝: -	庫存1,200
S6J342AFSBSV20000	Infineon Technologies	TRAVEO-40NM Core Processor: ARM® Cortex®-R5F Core Size: 32-Bit Speed: 240MHz Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Number of I/O: 116 Program Memory Size: 1.0625MB (1.0625M x 8) Program Memory Type: FLASH EEPROM Size: 112K x 8 RAM Size: 128K x 8 Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V Data Converters: A/D 35x12b Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封裝: -	Request a Quote
FF300R07KE4HOSA1	Infineon Technologies	IGBT MODULE 650V 940W IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): - Power - Max: 940 W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 150°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	封裝: -	庫存9
CY9BF122LPMC-GNE2	Infineon Technologies	IC MCU 32BIT 160KB FLASH 64LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 72MHz Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 50 Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 23x12b SAR; D/A 2x10b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封裝: -	Request a Quote
CY9AF114NAPMC-G-F4E1	Infineon Technologies	IC MCU 32BIT 256KB FLASH 100LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Single-Core Speed: 40MHz Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Number of I/O: 83 Program Memory Size: 256KB (256K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 32K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 16x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x14)	封裝: -	Request a Quote
BSC014N04LSTATMA1	Infineon Technologies	MOSFET N-CH 40V 33A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 115W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	封裝: -	庫存11,580
CYT2B97BACQ0AZSGS	Infineon Technologies	IC MCU 32BT 2.0625MB FLSH 144QFP Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Core Size: 32-Bit Dual-Core Speed: 100MHz, 160MHz Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT Number of I/O: 122 Program Memory Size: 2.0625MB (2.0625M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 256K x 8 Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Data Converters: A/D 72x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 144-LQFP Supplier Device Package: 144-LQFP (20x20)	封裝: -	Request a Quote
IRLMS6702TR	Infineon Technologies	MOSFET P-CH 20V 2.4A 6-TSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Micro6™(SOT23-6) Package / Case: SOT-23-6	封裝: -	Request a Quote
IPDQ60T017S7XTMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote
IPD06N03LAG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-11 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	Request a Quote
FP150R07N3E4PB11BPSA1	Infineon Technologies	LOW POWER ECONO AG-ECONO3-3 IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 150 A Power - Max: 430 W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V Input: Three Phase Bridge Rectifier NTC Thermistor: Yes Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: AG-ECONO3	封裝: -	Request a Quote
CY9AFA42MAPMC-GNE2	Infineon Technologies	IC MCU 32BIT 160KB FLASH 80LQFP Core Processor: ARM® Cortex®-M3 Core Size: 32-Bit Speed: 40MHz Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART Peripherals: DMA, LCD, LVD, POR, PWM, WDT Number of I/O: 66 Program Memory Size: 160KB (160K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Data Converters: A/D 17x12b SAR Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	封裝: -	Request a Quote

IKW15T120FKSA1

Infineon Technologies

IGBT 1200V 30A 110W TO247-3

IGBT Type: NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 45A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 110W
Switching Energy: 2.7mJ
Input Type: Standard
Gate Charge: 85nC
Td (on/off) @ 25°C: 50ns/520ns
Test Condition: 600V, 15A, 56 Ohm, 15V
Reverse Recovery Time (trr): 140ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: PG-TO247-3

封裝: TO-247-3

庫存2,100

IRG7T300CL12B

Infineon Technologies

MOD IGBT 1200V 300A POWIR 62

IGBT Type: -
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 570A
Power - Max: 1600W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 300A
Current - Collector Cutoff (Max): 4mA
Input Capacitance (Cies) @ Vce: 42.4nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: POWIR? 62 Module
Supplier Device Package: POWIR? 62

封裝: POWIR? 62 Module

庫存6,640

IRF7406GTRPBF

Infineon Technologies

MOSFET P-CH 30V 6.7A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存141,936

IRF1324SPBF

Infineon Technologies

MOSFET N-CH 24V 195A D2-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7590pF @ 24V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.65 mOhm @ 195A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

庫存5,040

IRF7703

Infineon Technologies

MOSFET P-CH 40V 6A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 5220pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存2,464

IPN80R900P7ATMA1

Infineon Technologies

LOW POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存2,672

IPD60R1K4C6ATMA1

Infineon Technologies

MOSFET N-CH 600V 3.2A TO252-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 28.4W (Tc)
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

庫存7,008

BC847BWH6327XTSA1

Infineon Technologies

TRANS NPN 45V 0.1A SOT323

Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Power - Max: 250mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: PG-SOT323-3

封裝: SC-70, SOT-323

庫存5,376

BAR6302LE6327XTMA1

Infineon Technologies

DIODE RF SGL 50V 100MA TSLP-2

Diode Type: PIN - Single
Voltage - Peak Reverse (Max): 50V
Current - Max: 100mA
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1 Ohm @ 10mA, 100MHz
Power Dissipation (Max): 250mW
Operating Temperature: 150°C (TJ)
Package / Case: SOD-882
Supplier Device Package: PG-TSLP-2

封裝: SOD-882

庫存7,504

IRU1015CP

Infineon Technologies

IC REG LINEAR 1.5A UTHIN-2

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 1.5A
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: 0°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 2-Ultra Thin-Pak
Supplier Device Package: 2-Ultra Thin-Pak

封裝: 2-Ultra Thin-Pak

庫存6,752

BTS5230GS

Infineon Technologies

IC HIGH SIDE PWR SWITCH PDSO-14

Switch Type: General Purpose
Number of Outputs: 2
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: N-Channel
Interface: On/Off
Voltage - Load: 4.5 V ~ 28 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Rds On (Typ): 140 mOhm (Max)
Input Type: Non-Inverting
Features: Auto Restart, Status Flag
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Operating Temperature: -40°C ~ 150°C (TJ)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: P-DSO-14

封裝: 14-SOIC (0.154", 3.90mm Width)

庫存73,608

IR4301MTRPBF

Infineon Technologies

IC AMP AUDIO MONO 160W PQFN22

Type: Class D
Output Type: 1-Channel (Mono)
Max Output Power x Channels @ Load: 160W x 1 @ 4 Ohm
Voltage - Supply: 10 V ~ 15 V
Features: Depop, Differential Inputs
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C (TA)
Supplier Device Package: 22-PQFN (5x6)
Package / Case: 22-PowerVQFN

封裝: 22-PowerVQFN

庫存116,268

PEB 3331 HT V2.2

Infineon Technologies

IC CODEC VOIP 100-TQFP

Function: Voice Over IP Processor
Interface: Parallel, PCM, Serial
Number of Circuits: 1
Voltage - Supply: -
Current - Supply: -
Power (Watts): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: PG-TQFP-100

封裝: 100-LQFP

庫存3,312

SAA-XC886-8FFA 5V AC

Infineon Technologies

IC MCU 8BIT 32KB FLASH 48TQFP

Core Processor: XC800
Core Size: 8-Bit
Speed: 24MHz
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 34
Program Memory Size: 32KB (32K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 1.75K x 8
Voltage - Supply (Vcc/Vdd): 2.3 V ~ 5.5 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 140°C (TA)
Mounting Type: -
Package / Case: 48-TQFP
Supplier Device Package: 48-TQFP (7x7)

封裝: 48-TQFP

庫存4,544

SAF-TC1115-L100EB-G BB

Infineon Technologies

IC MCU 32BIT ROMLESS 208LBGA

Core Processor: TriCore?
Core Size: 32-Bit
Speed: 100MHz
Connectivity: CAN, EBI/EMI, FIFO, I2C, IrDA, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Number of I/O: 72
Program Memory Size: -
Program Memory Type: ROMless
EEPROM Size: -
RAM Size: 144K x 8
Voltage - Supply (Vcc/Vdd): 1.43 V ~ 1.58 V
Data Converters: -
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 208-LBGA
Supplier Device Package: P-LBGA-208-2

封裝: 208-LBGA

庫存7,456

PTMA180402FL V1 R250

Infineon Technologies

IC AMP RF LDMOS 40W H34265-8

Frequency: 1.8GHz ~ 2GHz
P1dB: -
Gain: 30dB
Noise Figure: -
RF Type: CDMA
Voltage - Supply: -
Current - Supply: -
Test Frequency: -
Package / Case: H-34265-8
Supplier Device Package: H-34265-8

封裝: H-34265-8

庫存8,460

S6J334EJTCSE2000A

Infineon Technologies

TRAVEO-40NM

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 240MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 150
Program Memory Size: 4.0625MB (4.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 112K x 8
RAM Size: 544K x 8
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Data Converters: A/D 48x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Supplier Device Package: 176-TEQFP (24x24)

封裝: -

庫存1,200

S6J342AFSBSV20000

Infineon Technologies

TRAVEO-40NM

Core Processor: ARM® Cortex®-R5F
Core Size: 32-Bit
Speed: 240MHz
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Number of I/O: 116
Program Memory Size: 1.0625MB (1.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 112K x 8
RAM Size: 128K x 8
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Data Converters: A/D 35x12b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封裝: -

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FF300R07KE4HOSA1

Infineon Technologies

IGBT MODULE 650V 940W

IGBT Type: Trench Field Stop
Configuration: 2 Independent
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): -
Power - Max: 940 W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

封裝: -

庫存9

CY9BF122LPMC-GNE2

Infineon Technologies

IC MCU 32BIT 160KB FLASH 64LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 72MHz
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 50
Program Memory Size: 160KB (160K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 23x12b SAR; D/A 2x10b
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封裝: -

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CY9AF114NAPMC-G-F4E1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 100LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit Single-Core
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Number of I/O: 83
Program Memory Size: 256KB (256K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 32K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 16x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x14)

封裝: -

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BSC014N04LSTATMA1

Infineon Technologies

MOSFET N-CH 40V 33A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

封裝: -

庫存11,580

CYT2B97BACQ0AZSGS

Infineon Technologies

IC MCU 32BT 2.0625MB FLSH 144QFP

Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Core Size: 32-Bit Dual-Core
Speed: 100MHz, 160MHz
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Number of I/O: 122
Program Memory Size: 2.0625MB (2.0625M x 8)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
RAM Size: 256K x 8
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Data Converters: A/D 72x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LQFP
Supplier Device Package: 144-LQFP (20x20)

封裝: -

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IRLMS6702TR

Infineon Technologies

MOSFET P-CH 20V 2.4A 6-TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Micro6™(SOT23-6)
Package / Case: SOT-23-6

封裝: -

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IPDQ60T017S7XTMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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IPD06N03LAG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2653 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-11
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

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FP150R07N3E4PB11BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-3

IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
Power - Max: 430 W
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Input: Three Phase Bridge Rectifier
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: AG-ECONO3

封裝: -

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CY9AFA42MAPMC-GNE2

Infineon Technologies

IC MCU 32BIT 160KB FLASH 80LQFP

Core Processor: ARM® Cortex®-M3
Core Size: 32-Bit
Speed: 40MHz
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Number of I/O: 66
Program Memory Size: 160KB (160K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 16K x 8
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Data Converters: A/D 17x12b SAR
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

封裝: -

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