頁 58 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

BSC097N06NSTATMA1

Infineon Technologies

MOSFET N-CH 60V 13A/48A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-1
Package / Case: 8-PowerTDFN

封裝: -

庫存12,675

MOSFET (Metal Oxide)

60 V

13A (Ta), 48A (Tc)

6V, 10V

3.3V @ 14µA

15 nC @ 10 V

1075 pF @ 30 V

±20V

-

3W (Ta), 43W (Tc)

9.7mOhm @ 40A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-1

8-PowerTDFN

IPB339N20NM6ATMA1

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

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-

IAUT300N10S5N014ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-HSOF-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封裝: -

庫存8,859

MOSFET (Metal Oxide)

100 V

360A (Tj)

6V, 10V

3.8V @ 275µA

216 nC @ 10 V

16011 pF @ 50 V

±20V

-

375W (Tc)

1.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IPL60R140CFD7AUMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存8,940

-

18A (Tc)

-

IPA60R160C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 23.8A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 750µA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封裝: -

庫存1,500

MOSFET (Metal Oxide)

600 V

23.8A (Tc)

10V

3.5V @ 750µA

75 nC @ 10 V

1660 pF @ 100 V

±20V

-

34W (Tc)

160mOhm @ 11.3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IRFH5220TR2PBF

Infineon Technologies

MOSFET N-CH 200V 3.8A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6)
Package / Case: 8-VQFN Exposed Pad

封裝: -

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MOSFET (Metal Oxide)

200 V

3.8A (Ta), 20A (Tc)

-

5V @ 100µA

30 nC @ 10 V

1380 pF @ 50 V

-

99.9mOhm @ 5.8A, 10V

-

Surface Mount

PQFN (5x6)

8-VQFN Exposed Pad

IPLK60R360PFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 13A THIN-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-52
Package / Case: 8-PowerTDFN

封裝: -

庫存26,787

MOSFET (Metal Oxide)

600 V

13A (Tc)

10V

4.5V @ 140µA

12.7 nC @ 10 V

534 pF @ 400 V

±20V

-

74W (Tc)

360mOhm @ 2.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-52

8-PowerTDFN

IAUTN06S5N008TATMA1

Infineon Technologies

MOSFET_)40V 60V)

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存5,400

-

IMBF170R1K0M1XTMA1

Infineon Technologies

SICFET N-CH 1700V 5.2A TO263-7

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs(th) (Max) @ Id: 5.7V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V
Vgs (Max): +20V, -10V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-13
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封裝: -

庫存1,764

SiCFET (Silicon Carbide)

1700 V

5.2A (Tc)

12V, 15V

5.7V @ 1.1mA

5 nC @ 12 V

275 pF @ 1000 V

+20V, -10V

-

68W (Tc)

1000mOhm @ 1A, 15V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-13

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPP015N04NF2SAKMA1

Infineon Technologies

TRENCH PG-TO220-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存2,775

-

IPB012N04NF2SATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 189µA
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

庫存2,400

MOSFET (Metal Oxide)

40 V

41A (Ta), 197A (Tc)

6V, 10V

3.4V @ 189µA

239 nC @ 10 V

11300 pF @ 20 V

±20V

-

3.8W (Ta), 250W (Tc)

1.25mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPP50R500CEXKSA1

Infineon Technologies

MOSFET N-CH 500V 7.6A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

500 V

7.6A (Tc)

13V

3.5V @ 200µA

18.7 nC @ 10 V

433 pF @ 100 V

±20V

-

500mOhm @ 2.3A, 13V

-

Through Hole

PG-TO220-3-1

TO-220-3

IRFB5620PBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-904
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

200 V

25A (Tc)

10V

5V @ 100µA

38 nC @ 10 V

1710 pF @ 50 V

±20V

-

144W (Tc)

72.5mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-904

TO-220-3

IPP60R600E6XKSA1

Infineon Technologies

MOSFET N-CH 600V 7.3A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

600 V

7.3A (Tc)

10V

3.5V @ 200µA

20.5 nC @ 10 V

440 pF @ 100 V

±20V

-

63W (Tc)

600mOhm @ 2.4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IRFHS8342TR2PBF

Infineon Technologies

MOSFET N-CH 30V 8.8A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-6
Package / Case: 6-PowerVDFN

封裝: -

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MOSFET (Metal Oxide)

30 V

8.8A (Ta), 19A (Tc)

-

2.35V @ 25µA

8.7 nC @ 10 V

600 pF @ 25 V

-

16mOhm @ 8.5A, 10V

-

Surface Mount

PG-TSDSON-6

6-PowerVDFN

IPD60R145CFD7ATMA1

Infineon Technologies

MOSFET N CH

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA (DPAK)
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

庫存26,334

MOSFET (Metal Oxide)

600 V

16A (Tc)

10V

4.5V @ 340µA

31 nC @ 10 V

1330 pF @ 400 V

±20V

-

83W (Tc)

145mOhm @ 6.8A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252AA (DPAK)

TO-252-3, DPAK (2 Leads + Tab), SC-63

BSP129L6906

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240 V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs(th) (Max) @ Id: 1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Vgs (Max): ±20V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4-21
Package / Case: TO-261-4, TO-261AA

封裝: -

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MOSFET (Metal Oxide)

240 V

350mA (Ta)

0V, 10V

1V @ 108µA

5.7 nC @ 5 V

108 pF @ 25 V

±20V

Depletion Mode

1.8W (Ta)

6Ohm @ 350mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT223-4-21

TO-261-4, TO-261AA

IPAN60R360PFD7SXKSA1

Infineon Technologies

MOSFET N-CH 650V 10A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封裝: -

庫存1,182

MOSFET (Metal Oxide)

650 V

10A (Tc)

10V

4.5V @ 140µA

12.7 nC @ 10 V

534 pF @ 400 V

±20V

-

23W (Tc)

360mOhm @ 2.9A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IMBG120R053M2HXTMA1

Infineon Technologies

SIC DISCRETE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

庫存2,682

-

IRFC260NB

Infineon Technologies

MOSFET 200V 50A DIE

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 50A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 40mOhm @ 50A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: Die
Package / Case: Die

封裝: -

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MOSFET (Metal Oxide)

200 V

50A

10V

-

40mOhm @ 50A, 10V

-

Surface Mount

Die

IMZA120R040M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.2V @ 8.3mA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): 227W (Tc)
Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4-8
Package / Case: TO-247-4

封裝: -

庫存63

SiCFET (Silicon Carbide)

1200 V

55A (Tc)

15V, 18V

5.2V @ 8.3mA

39 nC @ 18 V

1620 nF @ 25 V

+20V, -5V

-

227W (Tc)

54.4mOhm @ 19.3A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-4-8

TO-247-4

IGOT60R070D1AUMA3

Infineon Technologies

GANFET N-CH

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-20-87
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)

封裝: -

庫存3,237

GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-20-87

20-PowerSOIC (0.433", 11.00mm Width)

IGOT60R070D1AUMA1

Infineon Technologies

GANFET N-CH 600V 31A 20DSO

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-20-87
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)

封裝: -

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GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-20-87

20-PowerSOIC (0.433", 11.00mm Width)

IPP026N04NF2SAKMA1

Infineon Technologies

TRENCH PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 81µA
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-U05
Package / Case: TO-220-3

封裝: -

庫存2,982

MOSFET (Metal Oxide)

40 V

29A (Ta), 121A (Tc)

6V, 10V

3.4V @ 81µA

102 nC @ 10 V

4800 pF @ 20 V

±20V

-

3.8W (Ta), 150W (Tc)

2.6mOhm @ 70A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-U05

TO-220-3

IPP024N08NF2SAKMA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 182A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 139µA
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

封裝: -

庫存879

MOSFET (Metal Oxide)

80 V

28A (Ta), 182A (Tc)

6V, 10V

3.8V @ 139µA

133 nC @ 10 V

6200 pF @ 40 V

±20V

-

3.8W (Ta), 214W (Tc)

2.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

IRFH7932TR2PBF

Infineon Technologies

MOSFET N-CH 30V 24A PQFN56

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 3.4W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PQFN (5x6) Single Die
Package / Case: 8-PowerVDFN

封裝: -

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MOSFET (Metal Oxide)

30 V

24A (Ta), 104A (Tc)

-

2.35V @ 100µA

51 nC @ 4.5 V

4270 pF @ 15 V

-

3.4W (Ta)

3.3mOhm @ 25A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PQFN (5x6) Single Die

8-PowerVDFN

IPF042N10NF2SATMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

封裝: -

庫存843

MOSFET (Metal Oxide)

100 V

21A (Ta), 139A (Tc)

6V, 10V

3.8V @ 93µA

85 nC @ 10 V

4000 pF @ 50 V

±20V

-

3.8W (Ta), 167W (Tc)

4.25mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7

TO-263-7, D2PAK (6 Leads + Tab)

IST019N08NM5AUMA1

Infineon Technologies

TRENCH 40<-<100V PG-HSOF-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 148µA
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 313W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-1
Package / Case: 5-PowerSFN

封裝: -

庫存3,783

MOSFET (Metal Oxide)

80 V

32A (Ta), 290A (Tc)

6V, 10V

3.8V @ 148µA

132 nC @ 10 V

6600 pF @ 40 V

±20V

-

3.8W (Ta), 313W (Tc)

1.9mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-1

5-PowerSFN

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
BSC097N06NSTATMA1	Infineon Technologies	MOSFET N-CH 60V 13A/48A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.3V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1075 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 43W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-1 Package / Case: 8-PowerTDFN	封裝: -	庫存12,675	MOSFET (Metal Oxide)	60 V	13A (Ta), 48A (Tc)	6V, 10V	3.3V @ 14µA	15 nC @ 10 V	1075 pF @ 30 V	±20V	-	3W (Ta), 43W (Tc)	9.7mOhm @ 40A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-1	8-PowerTDFN
IPB339N20NM6ATMA1	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IAUT300N10S5N014ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-HSOF-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 360A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封裝: -	庫存8,859	MOSFET (Metal Oxide)	100 V	360A (Tj)	6V, 10V	3.8V @ 275µA	216 nC @ 10 V	16011 pF @ 50 V	±20V	-	375W (Tc)	1.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPL60R140CFD7AUMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存8,940	-	-	18A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
IPA60R160C6XKSA1	Infineon Technologies	MOSFET N-CH 600V 23.8A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 23.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 750µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11.3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封裝: -	庫存1,500	MOSFET (Metal Oxide)	600 V	23.8A (Tc)	10V	3.5V @ 750µA	75 nC @ 10 V	1660 pF @ 100 V	±20V	-	34W (Tc)	160mOhm @ 11.3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IRFH5220TR2PBF	Infineon Technologies	MOSFET N-CH 200V 3.8A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 50 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 99.9mOhm @ 5.8A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Package / Case: 8-VQFN Exposed Pad	封裝: -	Request a Quote	MOSFET (Metal Oxide)	200 V	3.8A (Ta), 20A (Tc)	-	5V @ 100µA	30 nC @ 10 V	1380 pF @ 50 V	-	-	-	99.9mOhm @ 5.8A, 10V	-	Surface Mount	PQFN (5x6)	8-VQFN Exposed Pad
IPLK60R360PFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 13A THIN-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-52 Package / Case: 8-PowerTDFN	封裝: -	庫存26,787	MOSFET (Metal Oxide)	600 V	13A (Tc)	10V	4.5V @ 140µA	12.7 nC @ 10 V	534 pF @ 400 V	±20V	-	74W (Tc)	360mOhm @ 2.9A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-52	8-PowerTDFN
IAUTN06S5N008TATMA1	Infineon Technologies	MOSFET_)40V 60V) FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存5,400	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IMBF170R1K0M1XTMA1	Infineon Technologies	SICFET N-CH 1700V 5.2A TO263-7 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs(th) (Max) @ Id: 5.7V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 1000 V Vgs (Max): +20V, -10V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 1000mOhm @ 1A, 15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-13 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	封裝: -	庫存1,764	SiCFET (Silicon Carbide)	1700 V	5.2A (Tc)	12V, 15V	5.7V @ 1.1mA	5 nC @ 12 V	275 pF @ 1000 V	+20V, -10V	-	68W (Tc)	1000mOhm @ 1A, 15V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-13	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPP015N04NF2SAKMA1	Infineon Technologies	TRENCH PG-TO220-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存2,775	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPB012N04NF2SATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 197A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 189µA Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	庫存2,400	MOSFET (Metal Oxide)	40 V	41A (Ta), 197A (Tc)	6V, 10V	3.4V @ 189µA	239 nC @ 10 V	11300 pF @ 20 V	±20V	-	3.8W (Ta), 250W (Tc)	1.25mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP50R500CEXKSA1	Infineon Technologies	MOSFET N-CH 500V 7.6A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 13V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	500 V	7.6A (Tc)	13V	3.5V @ 200µA	18.7 nC @ 10 V	433 pF @ 100 V	±20V	-	-	500mOhm @ 2.3A, 13V	-	Through Hole	PG-TO220-3-1	TO-220-3
IRFB5620PBFXKMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 72.5mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-904 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	200 V	25A (Tc)	10V	5V @ 100µA	38 nC @ 10 V	1710 pF @ 50 V	±20V	-	144W (Tc)	72.5mOhm @ 15A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-904	TO-220-3
IPP60R600E6XKSA1	Infineon Technologies	MOSFET N-CH 600V 7.3A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 63W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	7.3A (Tc)	10V	3.5V @ 200µA	20.5 nC @ 10 V	440 pF @ 100 V	±20V	-	63W (Tc)	600mOhm @ 2.4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IRFHS8342TR2PBF	Infineon Technologies	MOSFET N-CH 30V 8.8A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-6 Package / Case: 6-PowerVDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	8.8A (Ta), 19A (Tc)	-	2.35V @ 25µA	8.7 nC @ 10 V	600 pF @ 25 V	-	-	-	16mOhm @ 8.5A, 10V	-	Surface Mount	PG-TSDSON-6	6-PowerVDFN
IPD60R145CFD7ATMA1	Infineon Technologies	MOSFET N CH FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 6.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA (DPAK) Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	庫存26,334	MOSFET (Metal Oxide)	600 V	16A (Tc)	10V	4.5V @ 340µA	31 nC @ 10 V	1330 pF @ 400 V	±20V	-	83W (Tc)	145mOhm @ 6.8A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	TO-252AA (DPAK)	TO-252-3, DPAK (2 Leads + Tab), SC-63
BSP129L6906	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 240 V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs(th) (Max) @ Id: 1V @ 108µA Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V Vgs (Max): ±20V FET Feature: Depletion Mode Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT223-4-21 Package / Case: TO-261-4, TO-261AA	封裝: -	Request a Quote	MOSFET (Metal Oxide)	240 V	350mA (Ta)	0V, 10V	1V @ 108µA	5.7 nC @ 5 V	108 pF @ 25 V	±20V	Depletion Mode	1.8W (Ta)	6Ohm @ 350mA, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-SOT223-4-21	TO-261-4, TO-261AA
IPAN60R360PFD7SXKSA1	Infineon Technologies	MOSFET N-CH 650V 10A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 23W (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封裝: -	庫存1,182	MOSFET (Metal Oxide)	650 V	10A (Tc)	10V	4.5V @ 140µA	12.7 nC @ 10 V	534 pF @ 400 V	±20V	-	23W (Tc)	360mOhm @ 2.9A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IMBG120R053M2HXTMA1	Infineon Technologies	SIC DISCRETE FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	庫存2,682	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRFC260NB	Infineon Technologies	MOSFET 200V 50A DIE FET Type: - Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 40mOhm @ 50A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	封裝: -	Request a Quote	MOSFET (Metal Oxide)	200 V	50A	10V	-	-	-	-	-	-	40mOhm @ 50A, 10V	-	Surface Mount	Die	Die
IMZA120R040M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.2V @ 8.3mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1620 nF @ 25 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 227W (Tc) Rds On (Max) @ Id, Vgs: 54.4mOhm @ 19.3A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-8 Package / Case: TO-247-4	封裝: -	庫存63	SiCFET (Silicon Carbide)	1200 V	55A (Tc)	15V, 18V	5.2V @ 8.3mA	39 nC @ 18 V	1620 nF @ 25 V	+20V, -5V	-	227W (Tc)	54.4mOhm @ 19.3A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-4-8	TO-247-4
IGOT60R070D1AUMA3	Infineon Technologies	GANFET N-CH FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-87 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	封裝: -	庫存3,237	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-87	20-PowerSOIC (0.433", 11.00mm Width)
IGOT60R070D1AUMA1	Infineon Technologies	GANFET N-CH 600V 31A 20DSO FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-87 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	封裝: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-87	20-PowerSOIC (0.433", 11.00mm Width)
IPP026N04NF2SAKMA1	Infineon Technologies	TRENCH PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 121A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 81µA Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 70A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-U05 Package / Case: TO-220-3	封裝: -	庫存2,982	MOSFET (Metal Oxide)	40 V	29A (Ta), 121A (Tc)	6V, 10V	3.4V @ 81µA	102 nC @ 10 V	4800 pF @ 20 V	±20V	-	3.8W (Ta), 150W (Tc)	2.6mOhm @ 70A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-U05	TO-220-3
IPP024N08NF2SAKMA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 182A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 139µA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	封裝: -	庫存879	MOSFET (Metal Oxide)	80 V	28A (Ta), 182A (Tc)	6V, 10V	3.8V @ 139µA	133 nC @ 10 V	6200 pF @ 40 V	±20V	-	3.8W (Ta), 214W (Tc)	2.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
IRFH7932TR2PBF	Infineon Technologies	MOSFET N-CH 30V 24A PQFN56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.35V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 3.4W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PQFN (5x6) Single Die Package / Case: 8-PowerVDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	24A (Ta), 104A (Tc)	-	2.35V @ 100µA	51 nC @ 4.5 V	4270 pF @ 15 V	-	-	3.4W (Ta)	3.3mOhm @ 25A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PQFN (5x6) Single Die	8-PowerVDFN
IPF042N10NF2SATMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 93µA Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	封裝: -	庫存843	MOSFET (Metal Oxide)	100 V	21A (Ta), 139A (Tc)	6V, 10V	3.8V @ 93µA	85 nC @ 10 V	4000 pF @ 50 V	±20V	-	3.8W (Ta), 167W (Tc)	4.25mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D2PAK (6 Leads + Tab)
IST019N08NM5AUMA1	Infineon Technologies	TRENCH 40<-<100V PG-HSOF-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 290A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 148µA Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 313W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	封裝: -	庫存3,783	MOSFET (Metal Oxide)	80 V	32A (Ta), 290A (Tc)	6V, 10V	3.8V @ 148µA	132 nC @ 10 V	6600 pF @ 40 V	±20V	-	3.8W (Ta), 313W (Tc)	1.9mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN