頁 56 - Infineon Technologies 產品 - 電晶體 - FET、MOSFET - 單

IPAN60R280PFD7SXKSA1

Infineon Technologies

CONSUMER PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 24W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封裝: -

庫存8,646

MOSFET (Metal Oxide)

600 V

12A (Tc)

10V

4.5V @ 180µA

15.3 nC @ 10 V

656 pF @ 400 V

±20V

-

24W (Tc)

280mOhm @ 3.6A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

IPQC65R040CFD7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22-1
Package / Case: 22-PowerBSOP Module

封裝: -

庫存600

MOSFET (Metal Oxide)

650 V

64A (Tc)

10V

4.5V @ 1.24mA

97 nC @ 10 V

4975 pF @ 400 V

±20V

-

357W (Tc)

40mOhm @ 24.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22-1

22-PowerBSOP Module

ISK036N03LM5AUSA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 39W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-6-1
Package / Case: 6-PowerVDFN

封裝: -

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MOSFET (Metal Oxide)

30 V

16.5A (Ta), 81A (Tc)

4.5V, 10V

2V @ 250µA

21.5 nC @ 10 V

1400 pF @ 15 V

±16V

-

2.1W (Ta), 39W (Tc)

3.6mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-VSON-6-1

6-PowerVDFN

IPD42DP15LMATMA1

Infineon Technologies

TRENCH >=100V PG-TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 8.2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

庫存3,327

MOSFET (Metal Oxide)

150 V

1.7A (Ta), 9A (Tc)

4.5V, 10V

2V @ 1.04mA

43 nC @ 10 V

2100 pF @ 75 V

±20V

-

3W (Ta), 83W (Tc)

420mOhm @ 8.2A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPQC60R040S7AXTMA1

Infineon Technologies

MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 272W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-22
Package / Case: 22-PowerBSOP Module

封裝: -

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MOSFET (Metal Oxide)

600 V

14A (Tc)

12V

4.5V @ 790µA

83 nC @ 12 V

-

±20V

-

272W (Tc)

40mOhm @ 13A, 12V

-40°C ~ 150°C (TJ)

Surface Mount

PG-HDSOP-22

22-PowerBSOP Module

IRFHM8326TRPBFXTMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PQFN (3.1x3.1)
Package / Case: 8-WDFN Exposed Pad

封裝: -

庫存12,000

MOSFET (Metal Oxide)

30 V

19A (Ta), 25A (Tc)

4.5V, 10V

2.2V @ 50µA

39 nC @ 10 V

2496 pF @ 10 V

±20V

-

2.8W (Ta), 37W (Tc)

4.7mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-PQFN (3.1x3.1)

8-WDFN Exposed Pad

IMW120R014M1HXKSA1

Infineon Technologies

SIC DISCRETE

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs(th) (Max) @ Id: 5.2V @ 23.4mA
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V
Vgs (Max): +20V, -5V
FET Feature: -
Power Dissipation (Max): 455W (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

封裝: -

庫存864

SiCFET (Silicon Carbide)

1200 V

127A (Tc)

15V, 18V

5.2V @ 23.4mA

110 nC @ 18 V

4580 nF @ 25 V

+20V, -5V

-

455W (Tc)

18.4mOhm @ 54.3A, 18V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IMT65R039M1HXUMA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封裝: -

庫存6,000

SiCFET (Silicon Carbide)

650 V

-

18V

-

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IAUC120N06S5L032ATMA1

Infineon Technologies

MOSFET N-CH 60V 120A TDSON-8-34

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-34
Package / Case: 8-PowerTDFN

封裝: -

庫存144,486

MOSFET (Metal Oxide)

60 V

120A (Tj)

-

2.2V @ 44µA

51.5 nC @ 10 V

3823 pF @ 30 V

±16V

-

94W (Tc)

3.2mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-34

8-PowerTDFN

IRL40T209ATMA2

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封裝: -

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MOSFET (Metal Oxide)

40 V

300A (Tc)

4.5V, 10V

2.4V @ 250µA

269 nC @ 4.5 V

16000 pF @ 20 V

±20V

-

500W (Tc)

0.72mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IRL40T209ATMA1

Infineon Technologies

MOSFET N-CH 40V 300A 8HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封裝: -

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MOSFET (Metal Oxide)

40 V

300A (Tc)

4.5V, 10V

2.4V @ 250µA

269 nC @ 4.5 V

16000 pF @ 20 V

±20V

-

500W (Tc)

0.72mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

IPA60R750E6XKSA1

Infineon Technologies

MOSFET N-CH 600V 5.7A TO220-FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 27W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

封裝: -

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MOSFET (Metal Oxide)

600 V

5.7A (Tc)

10V

3.5V @ 170µA

17.2 nC @ 10 V

373 pF @ 100 V

±20V

-

27W (Tc)

750mOhm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

AUIRF3805STRL

Infineon Technologies

MOSFET N-CH 55V 160A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

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MOSFET (Metal Oxide)

55 V

160A (Tc)

-

4V @ 250µA

290 nC @ 10 V

7960 pF @ 25 V

-

300W (Tc)

3.3mOhm @ 75A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IPP027N08N5XKSA1

Infineon Technologies

TRENCH 40<-<100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封裝: -

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MOSFET (Metal Oxide)

80 V

120A (Tc)

6V, 10V

3.8V @ 154µA

123 nC @ 10 V

8970 pF @ 40 V

±20V

-

214W (Tc)

2.7mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

BSC12DN20NS3GATMA1

Infineon Technologies

MOSFET N-CH 200V 11.3A 8TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-5
Package / Case: 8-PowerTDFN

封裝: -

庫存35,589

MOSFET (Metal Oxide)

200 V

11.3A (Tc)

10V

4V @ 25µA

8.7 nC @ 10 V

680 pF @ 100 V

±20V

-

50W (Tc)

125mOhm @ 5.7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-5

8-PowerTDFN

IPA60R125CFD7XKSA1

Infineon Technologies

MOSFET N-CH 600V 11A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

封裝: -

庫存3,000

MOSFET (Metal Oxide)

600 V

11A (Tc)

10V

4.5V @ 390µA

36 nC @ 10 V

1503 pF @ 400 V

±20V

-

32W (Tc)

125mOhm @ 7.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

IAUC60N10S5L110ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-33
Package / Case: 8-PowerTDFN

封裝: -

庫存11,232

MOSFET (Metal Oxide)

100 V

60A (Tc)

4.5V, 10V

2.2V @ 30µA

24.1 nC @ 10 V

1665 pF @ 50 V

±20V

-

88W (Tc)

11mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-33

8-PowerTDFN

IPA126N10NM3SXKSA1

Infineon Technologies

MOSFET N-CH 100V 39A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220 Full Pack
Package / Case: TO-220-3 Full Pack

封裝: -

庫存1,473

MOSFET (Metal Oxide)

100 V

35A (Tc)

6V, 10V

3.5V @ 45µA

35 nC @ 10 V

2500 pF @ 50 V

±20V

-

33W (Tc)

12.6mOhm @ 35A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220 Full Pack

TO-220-3 Full Pack

BSO083N03MSG

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-8
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封裝: -

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MOSFET (Metal Oxide)

30 V

11A (Ta)

4.5V, 10V

2V @ 250µA

27 nC @ 10 V

2100 pF @ 15 V

±20V

-

1.56W (Ta)

8.3mOhm @ 14A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-8

8-SOIC (0.154", 3.90mm Width)

BSC010N04LSTATMA1

Infineon Technologies

MOSFET N-CH 40V 39A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8 FL
Package / Case: 8-PowerTDFN

封裝: -

庫存10,878

MOSFET (Metal Oxide)

40 V

39A (Ta), 100A (Tc)

4.5V, 10V

2V @ 250µA

133 nC @ 10 V

9520 pF @ 20 V

±20V

-

3W (Ta), 167W (Tc)

1mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8 FL

8-PowerTDFN

IPB070N06N-G

Infineon Technologies

MOSFET N-CHAN D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封裝: -

Request a Quote

MOSFET (Metal Oxide)

60 V

80A (Tc)

-

4V @ 180µA

126 nC @ 10 V

4300 pF @ 30 V

-

6.7mOhm @ 80A, 10V

-

Surface Mount

PG-TO263-3

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSZ060NE2LSATMA1

Infineon Technologies

MOSFET N-CH 25V 12A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

封裝: -

庫存164,676

MOSFET (Metal Oxide)

25 V

12A (Ta), 40A (Tc)

4.5V, 10V

2V @ 250µA

9.1 nC @ 10 V

670 pF @ 12 V

±20V

-

2.1W (Ta), 26W (Tc)

6mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

IMZA75R140M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-4
Package / Case: TO-247-4

封裝: -

Request a Quote

-

Through Hole

PG-TO247-4

TO-247-4

IAUT300N08S5N012ATMA1

Infineon Technologies

MOSFET_(75V 120V(

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-8-1
Package / Case: 8-PowerSFN

封裝: -

Request a Quote

MOSFET (Metal Oxide)

80 V

300A (Tc)

6V, 10V

3.8V @ 275µA

231 nC @ 10 V

16250 pF @ 40 V

±20V

-

375W (Tc)

1.2mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-8-1

8-PowerSFN

BSC050N10NS5ATMA1

Infineon Technologies

MOSFET N-CH 100V 16A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-7
Package / Case: 8-PowerTDFN

封裝: -

庫存11,031

MOSFET (Metal Oxide)

100 V

16A (Ta), 100A (Tc)

6V, 10V

3.8V @ 72µA

61 nC @ 10 V

4300 pF @ 50 V

±20V

-

3W (Ta), 136W (Tc)

5mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8-7

8-PowerTDFN

IPW60R070CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 31A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-21
Package / Case: TO-247-3

封裝: -

庫存3,291

MOSFET (Metal Oxide)

650 V

31A (Tc)

10V

4.5V @ 760µA

67 nC @ 10 V

2721 pF @ 400 V

±20V

-

156W (Tc)

70mOhm @ 15.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-21

TO-247-3

IPL60R115CFD7AUMA1

Infineon Technologies

HIGH POWER_NEW

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封裝: -

Request a Quote

-

22A (Tc)

-

IAUC100N04S6L014ATMA1

Infineon Technologies

IAUC100N04S6L014ATMA1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封裝: -

庫存72,879

MOSFET (Metal Oxide)

40 V

100A (Tc)

4.5V, 10V

2V @ 50µA

65 nC @ 10 V

3935 pF @ 25 V

±16V

-

100W (Tc)

1.4mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

零件編號	製造商	描述	封裝	庫存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPAN60R280PFD7SXKSA1	Infineon Technologies	CONSUMER PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 24W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封裝: -	庫存8,646	MOSFET (Metal Oxide)	600 V	12A (Tc)	10V	4.5V @ 180µA	15.3 nC @ 10 V	656 pF @ 400 V	±20V	-	24W (Tc)	280mOhm @ 3.6A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPQC65R040CFD7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22-1 Package / Case: 22-PowerBSOP Module	封裝: -	庫存600	MOSFET (Metal Oxide)	650 V	64A (Tc)	10V	4.5V @ 1.24mA	97 nC @ 10 V	4975 pF @ 400 V	±20V	-	357W (Tc)	40mOhm @ 24.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22-1	22-PowerBSOP Module
ISK036N03LM5AUSA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-6-1 Package / Case: 6-PowerVDFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	16.5A (Ta), 81A (Tc)	4.5V, 10V	2V @ 250µA	21.5 nC @ 10 V	1400 pF @ 15 V	±16V	-	2.1W (Ta), 39W (Tc)	3.6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-VSON-6-1	6-PowerVDFN
IPD42DP15LMATMA1	Infineon Technologies	TRENCH >=100V PG-TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150 V Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1.04mA Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 75 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 8.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	封裝: -	庫存3,327	MOSFET (Metal Oxide)	150 V	1.7A (Ta), 9A (Tc)	4.5V, 10V	2V @ 1.04mA	43 nC @ 10 V	2100 pF @ 75 V	±20V	-	3W (Ta), 83W (Tc)	420mOhm @ 8.2A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPQC60R040S7AXTMA1	Infineon Technologies	MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4.5V @ 790µA Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-22 Package / Case: 22-PowerBSOP Module	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	14A (Tc)	12V	4.5V @ 790µA	83 nC @ 12 V	-	±20V	-	272W (Tc)	40mOhm @ 13A, 12V	-40°C ~ 150°C (TJ)	Surface Mount	PG-HDSOP-22	22-PowerBSOP Module
IRFHM8326TRPBFXTMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2496 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.8W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (3.1x3.1) Package / Case: 8-WDFN Exposed Pad	封裝: -	庫存12,000	MOSFET (Metal Oxide)	30 V	19A (Ta), 25A (Tc)	4.5V, 10V	2.2V @ 50µA	39 nC @ 10 V	2496 pF @ 10 V	±20V	-	2.8W (Ta), 37W (Tc)	4.7mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	8-PQFN (3.1x3.1)	8-WDFN Exposed Pad
IMW120R014M1HXKSA1	Infineon Technologies	SIC DISCRETE FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs(th) (Max) @ Id: 5.2V @ 23.4mA Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4580 nF @ 25 V Vgs (Max): +20V, -5V FET Feature: - Power Dissipation (Max): 455W (Tc) Rds On (Max) @ Id, Vgs: 18.4mOhm @ 54.3A, 18V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	封裝: -	庫存864	SiCFET (Silicon Carbide)	1200 V	127A (Tc)	15V, 18V	5.2V @ 23.4mA	110 nC @ 18 V	4580 nF @ 25 V	+20V, -5V	-	455W (Tc)	18.4mOhm @ 54.3A, 18V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IMT65R039M1HXUMA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封裝: -	庫存6,000	SiCFET (Silicon Carbide)	650 V	-	18V	-	-	-	-	-	-	-	-	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IAUC120N06S5L032ATMA1	Infineon Technologies	MOSFET N-CH 60V 120A TDSON-8-34 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.2V @ 44µA Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-34 Package / Case: 8-PowerTDFN	封裝: -	庫存144,486	MOSFET (Metal Oxide)	60 V	120A (Tj)	-	2.2V @ 44µA	51.5 nC @ 10 V	3823 pF @ 30 V	±16V	-	94W (Tc)	3.2mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-34	8-PowerTDFN
IRL40T209ATMA2	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	300A (Tc)	4.5V, 10V	2.4V @ 250µA	269 nC @ 4.5 V	16000 pF @ 20 V	±20V	-	500W (Tc)	0.72mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IRL40T209ATMA1	Infineon Technologies	MOSFET N-CH 40V 300A 8HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 269 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	40 V	300A (Tc)	4.5V, 10V	2.4V @ 250µA	269 nC @ 4.5 V	16000 pF @ 20 V	±20V	-	500W (Tc)	0.72mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
IPA60R750E6XKSA1	Infineon Technologies	MOSFET N-CH 600V 5.7A TO220-FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-FP Package / Case: TO-220-3 Full Pack	封裝: -	Request a Quote	MOSFET (Metal Oxide)	600 V	5.7A (Tc)	10V	3.5V @ 170µA	17.2 nC @ 10 V	373 pF @ 100 V	±20V	-	27W (Tc)	750mOhm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
AUIRF3805STRL	Infineon Technologies	MOSFET N-CH 55V 160A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7960 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	55 V	160A (Tc)	-	4V @ 250µA	290 nC @ 10 V	7960 pF @ 25 V	-	-	300W (Tc)	3.3mOhm @ 75A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IPP027N08N5XKSA1	Infineon Technologies	TRENCH 40<-<100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 154µA Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	封裝: -	Request a Quote	MOSFET (Metal Oxide)	80 V	120A (Tc)	6V, 10V	3.8V @ 154µA	123 nC @ 10 V	8970 pF @ 40 V	±20V	-	214W (Tc)	2.7mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
BSC12DN20NS3GATMA1	Infineon Technologies	MOSFET N-CH 200V 11.3A 8TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 100 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-5 Package / Case: 8-PowerTDFN	封裝: -	庫存35,589	MOSFET (Metal Oxide)	200 V	11.3A (Tc)	10V	4V @ 25µA	8.7 nC @ 10 V	680 pF @ 100 V	±20V	-	50W (Tc)	125mOhm @ 5.7A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-5	8-PowerTDFN
IPA60R125CFD7XKSA1	Infineon Technologies	MOSFET N-CH 600V 11A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 390µA Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1503 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 32W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	封裝: -	庫存3,000	MOSFET (Metal Oxide)	600 V	11A (Tc)	10V	4.5V @ 390µA	36 nC @ 10 V	1503 pF @ 400 V	±20V	-	32W (Tc)	125mOhm @ 7.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IAUC60N10S5L110ATMA1	Infineon Technologies	MOSFET_(75V 120V( PG-TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 24.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-33 Package / Case: 8-PowerTDFN	封裝: -	庫存11,232	MOSFET (Metal Oxide)	100 V	60A (Tc)	4.5V, 10V	2.2V @ 30µA	24.1 nC @ 10 V	1665 pF @ 50 V	±20V	-	88W (Tc)	11mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-33	8-PowerTDFN
IPA126N10NM3SXKSA1	Infineon Technologies	MOSFET N-CH 100V 39A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 45µA Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 33W (Tc) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	封裝: -	庫存1,473	MOSFET (Metal Oxide)	100 V	35A (Tc)	6V, 10V	3.5V @ 45µA	35 nC @ 10 V	2500 pF @ 50 V	±20V	-	33W (Tc)	12.6mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
BSO083N03MSG	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-8 Package / Case: 8-SOIC (0.154", 3.90mm Width)	封裝: -	Request a Quote	MOSFET (Metal Oxide)	30 V	11A (Ta)	4.5V, 10V	2V @ 250µA	27 nC @ 10 V	2100 pF @ 15 V	±20V	-	1.56W (Ta)	8.3mOhm @ 14A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-8	8-SOIC (0.154", 3.90mm Width)
BSC010N04LSTATMA1	Infineon Technologies	MOSFET N-CH 40V 39A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9520 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 FL Package / Case: 8-PowerTDFN	封裝: -	庫存10,878	MOSFET (Metal Oxide)	40 V	39A (Ta), 100A (Tc)	4.5V, 10V	2V @ 250µA	133 nC @ 10 V	9520 pF @ 20 V	±20V	-	3W (Ta), 167W (Tc)	1mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8 FL	8-PowerTDFN
IPB070N06N-G	Infineon Technologies	MOSFET N-CHAN D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 180µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 30 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	封裝: -	Request a Quote	MOSFET (Metal Oxide)	60 V	80A (Tc)	-	4V @ 180µA	126 nC @ 10 V	4300 pF @ 30 V	-	-	-	6.7mOhm @ 80A, 10V	-	Surface Mount	PG-TO263-3	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSZ060NE2LSATMA1	Infineon Technologies	MOSFET N-CH 25V 12A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 12 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 26W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	封裝: -	庫存164,676	MOSFET (Metal Oxide)	25 V	12A (Ta), 40A (Tc)	4.5V, 10V	2V @ 250µA	9.1 nC @ 10 V	670 pF @ 12 V	±20V	-	2.1W (Ta), 26W (Tc)	6mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IMZA75R140M1HXKSA1	Infineon Technologies	SILICON CARBIDE MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PG-TO247-4 Package / Case: TO-247-4	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	PG-TO247-4	TO-247-4
IAUT300N08S5N012ATMA1	Infineon Technologies	MOSFET_(75V 120V( FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	封裝: -	Request a Quote	MOSFET (Metal Oxide)	80 V	300A (Tc)	6V, 10V	3.8V @ 275µA	231 nC @ 10 V	16250 pF @ 40 V	±20V	-	375W (Tc)	1.2mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-8-1	8-PowerSFN
BSC050N10NS5ATMA1	Infineon Technologies	MOSFET N-CH 100V 16A/100A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 72µA Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-7 Package / Case: 8-PowerTDFN	封裝: -	庫存11,031	MOSFET (Metal Oxide)	100 V	16A (Ta), 100A (Tc)	6V, 10V	3.8V @ 72µA	61 nC @ 10 V	4300 pF @ 50 V	±20V	-	3W (Ta), 136W (Tc)	5mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IPW60R070CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 31A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 760µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 15.1A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-21 Package / Case: TO-247-3	封裝: -	庫存3,291	MOSFET (Metal Oxide)	650 V	31A (Tc)	10V	4.5V @ 760µA	67 nC @ 10 V	2721 pF @ 400 V	±20V	-	156W (Tc)	70mOhm @ 15.1A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-21	TO-247-3
IPL60R115CFD7AUMA1	Infineon Technologies	HIGH POWER_NEW FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封裝: -	Request a Quote	-	-	22A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
IAUC100N04S6L014ATMA1	Infineon Technologies	IAUC100N04S6L014ATMA1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3935 pF @ 25 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封裝: -	庫存72,879	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	2V @ 50µA	65 nC @ 10 V	3935 pF @ 25 V	±16V	-	100W (Tc)	1.4mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN