頁 23 - Infineon Technologies 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC42D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存2,416	1200V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC38D60C6	Infineon Technologies	DIODE GEN PURP 600V 150A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 150A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存4,672	600V	150A (DC)	1.9V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC32D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存5,760	1700V	50A (DC)	1.8V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D60E6	Infineon Technologies	DIODE GEN PURP 600V 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存6,624	600V	75A (DC)	1.25V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存4,448	1200V	50A (DC)	1.6V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存7,232	1200V	35A (DC)	2.1V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存4,832	1200V	35A (DC)	1.9V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC26D60C6	Infineon Technologies	DIODE GEN PURP 600V 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存6,288	600V	100A (DC)	1.9V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC24D30SIC3	Infineon Technologies	DIODE SILICON 300V 10A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 300V Capacitance @ Vr, F: 600pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	封裝: Die	庫存6,688	300V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 300V	600pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC23D60E6Y	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存7,136	600V	50A (DC)	1.25V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D60E6	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存5,456	600V	50A (DC)	1.25V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 35A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 35A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存5,088	1200V	35A (DC)	1.6V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存2,416	1200V	25A (DC)	2.1V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存4,960	1200V	25A (DC)	1.9V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC20D60C6	Infineon Technologies	DIODE GEN PURP 600V 75A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 75A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存7,056	600V	75A (DC)	1.9V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC19D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 6A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	封裝: Die	庫存5,600	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	300pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC16D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 5A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 170pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	封裝: Die	庫存7,184	600V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	170pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC161D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 300A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 300A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存6,816	1700V	300A (DC)	1.8V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60F6	Infineon Technologies	DIODE GEN PURP 600V 45A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 45A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 45A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封裝: Die	庫存2,100	600V	45A (DC)	1.6V @ 45A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC14D60E6Y	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存3,360	600V	30A (DC)	1.25V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60E6	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存5,664	600V	30A (DC)	1.25V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60C6Y	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存7,936	600V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC14D60C6	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 50A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存2,096	600V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC14D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 25A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 25A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存4,992	1200V	25A (DC)	1.6V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存4,896	1200V	15A (DC)	2.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存5,328	1200V	15A (DC)	1.9V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC11D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 4A WAFER Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 200µA @ 600V Capacitance @ Vr, F: 150pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 175°C	封裝: Die	庫存5,488	600V	4A (DC)	1.9V @ 4A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	150pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC110D170H	Infineon Technologies	DIODE GEN PURP 1.7KV 200A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V Current - Average Rectified (Io): 200A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存2,368	1700V	200A (DC)	1.8V @ 200A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C

SIDC42D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存2,416

1200V

50A (DC)

1.9V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC38D60C6

Infineon Technologies

DIODE GEN PURP 600V 150A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 150A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存4,672

600V

150A (DC)

1.9V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC32D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存5,760

1700V

50A (DC)

1.8V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC30D60E6

Infineon Technologies

DIODE GEN PURP 600V 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 75A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存6,624

600V

75A (DC)

1.25V @ 75A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC30D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存4,448

1200V

50A (DC)

1.6V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC30D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 35A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 35A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 35A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存7,232

1200V

35A (DC)

2.1V @ 35A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC30D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 35A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 35A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 35A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存4,832

1200V

35A (DC)

1.9V @ 35A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC26D60C6

Infineon Technologies

DIODE GEN PURP 600V 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存6,288

600V

100A (DC)

1.9V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC24D30SIC3

Infineon Technologies

DIODE SILICON 300V 10A WAFER

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 300V
Capacitance @ Vr, F: 600pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

封裝: Die

庫存6,688

300V

10A (DC)

1.7V @ 10A

No Recovery Time > 500mA (Io)

0ns

200µA @ 300V

600pF @ 1V, 1MHz

Surface Mount

Die

Sawn on foil

-55°C ~ 175°C

SIDC23D60E6Y

Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存7,136

600V

50A (DC)

1.25V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC23D60E6

Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存5,456

600V

50A (DC)

1.25V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC23D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 35A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 35A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 35A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存5,088

1200V

35A (DC)

1.6V @ 35A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC23D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 25A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 25A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存2,416

1200V

25A (DC)

2.1V @ 25A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC23D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 25A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 25A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存4,960

1200V

25A (DC)

1.9V @ 25A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC20D60C6

Infineon Technologies

DIODE GEN PURP 600V 75A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 75A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存7,056

600V

75A (DC)

1.9V @ 75A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC19D60SIC3

Infineon Technologies

DIODE SCHOTTKY 600V 6A WAFER

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

封裝: Die

庫存5,600

600V

6A (DC)

1.7V @ 6A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

300pF @ 1V, 1MHz

Surface Mount

Die

Sawn on foil

-55°C ~ 175°C

SIDC16D60SIC3

Infineon Technologies

DIODE SCHOTTKY 600V 5A WAFER

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 170pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

封裝: Die

庫存7,184

600V

5A (DC)

1.7V @ 5A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

170pF @ 1V, 1MHz

Surface Mount

Die

Sawn on foil

-55°C ~ 175°C

SIDC161D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 300A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 300A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存6,816

1700V

300A (DC)

1.8V @ 300A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC14D60F6

Infineon Technologies

DIODE GEN PURP 600V 45A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 45A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 45A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Die

庫存2,100

600V

45A (DC)

1.6V @ 45A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC14D60E6Y

Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存3,360

600V

30A (DC)

1.25V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC14D60E6

Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存5,664

600V

30A (DC)

1.25V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC14D60C6Y

Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存7,936

600V

50A (DC)

1.9V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC14D60C6

Infineon Technologies

DIODE GEN PURP 600V 50A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 50A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 50A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存2,096

600V

50A (DC)

1.9V @ 50A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC14D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 25A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 25A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 25A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存4,992

1200V

25A (DC)

1.6V @ 25A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC14D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 15A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存4,896

1200V

15A (DC)

2.1V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC14D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 15A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存5,328

1200V

15A (DC)

1.9V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC11D60SIC3

Infineon Technologies

DIODE SCHOTTKY 600V 4A WAFER

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 175°C

封裝: Die

庫存5,488

600V

4A (DC)

1.9V @ 4A

No Recovery Time > 500mA (Io)

0ns

200µA @ 600V

150pF @ 1V, 1MHz

Surface Mount

Die

Sawn on foil

-55°C ~ 175°C

SIDC110D170H

Infineon Technologies

DIODE GEN PURP 1.7KV 200A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存2,368

1700V

200A (DC)

1.8V @ 200A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1700V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C