頁 22 - Infineon Technologies 產品 - 二極體 - 整流器 - 單

零件編號	製造商	描述	封裝	庫存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC10D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存2,192	1200V	15A (DC)	1.6V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC09D60F6	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存7,280	600V	30A (DC)	1.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC09D60E6Y	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存4,880	600V	20A (DC)	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC09D60E6 UNSAWN	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存4,224	600V	20A (DC)	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC09D60E6	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存6,480	600V	20A (DC)	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC08D60C6Y	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存7,696	600V	30A (DC)	1.95V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC08D60C6	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存4,608	600V	30A (DC)	1.95V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC08D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 10A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存6,864	1200V	10A (DC)	1.6V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC08D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 7A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 7A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 7A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存7,920	1200V	7A (DC)	2.1V @ 7A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC07D60F6	Infineon Technologies	DIODE GEN PURP 600V 22.5A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 22.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 22.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封裝: Die	庫存3,568	600V	22.5A (DC)	1.6V @ 22.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC07D60E6	Infineon Technologies	DIODE GEN PURP 600V 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存6,208	600V	15A (DC)	1.25V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	250µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC07D60AF6	Infineon Technologies	DIODE GEN PURP 600V 22.5A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 22.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 22.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封裝: Die	庫存7,856	600V	22.5A (DC)	1.6V @ 22.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC06D60F6	Infineon Technologies	DIODE GEN PURP 600V 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封裝: Die	庫存6,336	600V	15A (DC)	1.6V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC06D60E6	Infineon Technologies	DIODE GEN PURP 600V 10A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存7,616	600V	10A (DC)	1.25V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC06D60C6	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存4,688	600V	20A (DC)	1.95V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC06D60AC6	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存4,544	600V	20A (DC)	1.95V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC06D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 7.5A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 7.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 7.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存2,384	1200V	7.5A (DC)	1.6V @ 7.5A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC06D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 5A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存3,280	1200V	5A (DC)	2.1V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC06D120E6	Infineon Technologies	DIODE GEN PURP 1.2KV 5A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存2,704	1200V	5A (DC)	1.9V @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC05D60C6	Infineon Technologies	DIODE GEN PURP 600V 15A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 15A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存7,952	600V	15A (DC)	1.95V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC04D60F6	Infineon Technologies	DIODE GEN PURP 600V 9A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 9A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封裝: Die	庫存2,560	600V	9A (DC)	1.6V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC03D60F6	Infineon Technologies	DIODE GEN PURP 600V 6A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封裝: Die	庫存7,856	600V	6A (DC)	1.6V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC03D60C6	Infineon Technologies	DIODE GEN PURP 600V 10A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 10A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存5,072	600V	10A (DC)	1.95V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC03D120H6	Infineon Technologies	DIODE GEN PURP 1.2KV 3A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存7,312	1200V	3A (DC)	1.6V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC03D120F6	Infineon Technologies	DIODE GEN PURP 1.2KV 2A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 2A (DC) Voltage - Forward (Vf) (Max) @ If: 2.1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存5,056	1200V	2A (DC)	2.1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC02D60F6	Infineon Technologies	DIODE GEN PURP 600V 3A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A (DC) Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 150°C	封裝: Die	庫存4,640	600V	3A (DC)	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC02D60C6	Infineon Technologies	DIODE GEN PURP 600V 6A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 6A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封裝: Die	庫存4,656	600V	6A (DC)	1.95V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC01D60C6	Infineon Technologies	DIODE GEN PURP WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -55°C ~ 150°C	封裝: Die	庫存3,456	-	-	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C

SIDC10D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 15A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存2,192

1200V

15A (DC)

1.6V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC09D60F6

Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存7,280

600V

30A (DC)

1.6V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC09D60E6Y

Infineon Technologies

DIODE GEN PURP 600V 20A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存4,880

600V

20A (DC)

1.7V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC09D60E6 UNSAWN

Infineon Technologies

DIODE GEN PURP 600V 20A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存4,224

600V

20A (DC)

1.7V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC09D60E6

Infineon Technologies

DIODE GEN PURP 600V 20A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存6,480

600V

20A (DC)

1.7V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC08D60C6Y

Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存7,696

600V

30A (DC)

1.95V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC08D60C6

Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存4,608

600V

30A (DC)

1.95V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC08D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 10A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存6,864

1200V

10A (DC)

1.6V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC08D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 7A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 7A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 7A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存7,920

1200V

7A (DC)

2.1V @ 7A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC07D60F6

Infineon Technologies

DIODE GEN PURP 600V 22.5A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 22.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 22.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Die

庫存3,568

600V

22.5A (DC)

1.6V @ 22.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC07D60E6

Infineon Technologies

DIODE GEN PURP 600V 15A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存6,208

600V

15A (DC)

1.25V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

250µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC07D60AF6

Infineon Technologies

DIODE GEN PURP 600V 22.5A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 22.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 22.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Die

庫存7,856

600V

22.5A (DC)

1.6V @ 22.5A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC06D60F6

Infineon Technologies

DIODE GEN PURP 600V 15A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Die

庫存6,336

600V

15A (DC)

1.6V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC06D60E6

Infineon Technologies

DIODE GEN PURP 600V 10A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存7,616

600V

10A (DC)

1.25V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC06D60C6

Infineon Technologies

DIODE GEN PURP 600V 20A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存4,688

600V

20A (DC)

1.95V @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC06D60AC6

Infineon Technologies

DIODE GEN PURP 600V 20A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存4,544

600V

20A (DC)

1.95V @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC06D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 7.5A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 7.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 7.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存2,384

1200V

7.5A (DC)

1.6V @ 7.5A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC06D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 5A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存3,280

1200V

5A (DC)

2.1V @ 5A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC06D120E6

Infineon Technologies

DIODE GEN PURP 1.2KV 5A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存2,704

1200V

5A (DC)

1.9V @ 5A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC05D60C6

Infineon Technologies

DIODE GEN PURP 600V 15A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 15A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存7,952

600V

15A (DC)

1.95V @ 15A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC04D60F6

Infineon Technologies

DIODE GEN PURP 600V 9A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 9A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Die

庫存2,560

600V

9A (DC)

1.6V @ 9A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC03D60F6

Infineon Technologies

DIODE GEN PURP 600V 6A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Die

庫存7,856

600V

6A (DC)

1.6V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC03D60C6

Infineon Technologies

DIODE GEN PURP 600V 10A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 10A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存5,072

600V

10A (DC)

1.95V @ 10A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC03D120H6

Infineon Technologies

DIODE GEN PURP 1.2KV 3A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存7,312

1200V

3A (DC)

1.6V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC03D120F6

Infineon Technologies

DIODE GEN PURP 1.2KV 2A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 2A (DC)
Voltage - Forward (Vf) (Max) @ If: 2.1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存5,056

1200V

2A (DC)

2.1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 1200V

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C

SIDC02D60F6

Infineon Technologies

DIODE GEN PURP 600V 3A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 150°C

封裝: Die

庫存4,640

600V

3A (DC)

1.6V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 150°C

SIDC02D60C6

Infineon Technologies

DIODE GEN PURP 600V 6A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封裝: Die

庫存4,656

600V

6A (DC)

1.95V @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

SIDC01D60C6

Infineon Technologies

DIODE GEN PURP WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -55°C ~ 150°C

封裝: Die

庫存3,456

-

Standard Recovery >500ns, > 200mA (Io)

-

Surface Mount

Die

Sawn on foil

-55°C ~ 150°C