頁 13 - Infineon Technologies 產品 - 二極體 - 整流器 - 單 | 黑森爾電子
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Infineon Technologies 產品 - 二極體 - 整流器 - 單

記錄 805
頁  13/29
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零件編號
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描述
封裝
庫存
數量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
BAS40E8224HTMA1
Infineon Technologies

AF SCHOTTKY DIODES

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
庫存60,000
-
-
-
-
-
-
-
-
-
-
-
D850N36TXPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 850A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 850A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 850 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
Request a Quote
3600 V
850A
1.28 V @ 850 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 3600 V
-
Clamp On
DO-200AB, B-PUK
-
-40°C ~ 160°C
IDH10G65C5ZXKSA2
Infineon Technologies

DIODE SCHOTTKY 650V 10A TO220-2

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DZ950N36KHPSA1
Infineon Technologies

DIODE GEN PURP 3.6KV 950A MODULE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 3600 V
  • Current - Average Rectified (Io): 950A
  • Voltage - Forward (Vf) (Max) @ If: 1.78 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -40°C ~ 150°C
封裝: -
Request a Quote
3600 V
950A
1.78 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 3600 V
-
Chassis Mount
Module
Module
-40°C ~ 150°C
BAT60BE6359HTMA1
Infineon Technologies

DIODE SCHOTTKY 10V 3A SOD323-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 10 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 8 V
  • Capacitance @ Vr, F: 25pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: PG-SOD323-2
  • Operating Temperature - Junction: 150°C
封裝: -
庫存29,958
10 V
3A
600 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
25 µA @ 8 V
25pF @ 5V, 1MHz
Surface Mount
SC-76, SOD-323
PG-SOD323-2
150°C
PX3847DDQG004XUMA1
Infineon Technologies

LED PX3847DDQG004XUMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
D1381S45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 1630A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1630A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AD
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 140°C
封裝: -
Request a Quote
4500 V
1630A
2.6 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4500 V
-
Chassis Mount
DO-200AD
-
-40°C ~ 140°C
D1251S45TXPSA1
Infineon Technologies

DIODE GEN PURP 4.5KV 1530A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1530A
  • Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 140°C
封裝: -
Request a Quote
4500 V
1530A
2.5 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
80 mA @ 4500 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 140°C
D2200N24TVFXPSA1
Infineon Technologies

DIODE GEN PURP 2.4KV 2200A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400 V
  • Current - Average Rectified (Io): 2200A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
Request a Quote
2400 V
2200A
1.2 V @ 2000 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 2400 V
-
Clamp On
DO-200AC, K-PUK
-
-40°C ~ 160°C
IDT08S60C
Infineon Technologies

DIODE SIL CARB 600V 8A TO220-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 600 V
  • Capacitance @ Vr, F: 310pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: PG-TO220-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
600 V
8A
1.7 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
100 µA @ 600 V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2
-55°C ~ 175°C
SIDC14D120H6X1SA1
Infineon Technologies

DIODE GP 1.2KV 25A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 25 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
1200 V
25A
1.6 V @ 25 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
BAS5202VH6327XTSA1
Infineon Technologies

DIODE SCHOTTKY 45V 750MA SC79-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 750mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 45 V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: PG-SC79-2
  • Operating Temperature - Junction: 150°C (Max)
封裝: -
庫存2,249,826
45 V
750mA
600 mV @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 45 V
10pF @ 10V, 1MHz
Surface Mount
SC-79, SOD-523
PG-SC79-2
150°C (Max)
SIDC30D60E6X1SA1
Infineon Technologies

DIODE GP 600V 75A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
封裝: -
Request a Quote
600 V
75A
1.25 V @ 75 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 600 V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
PX8143HDMG008XTMA1
Infineon Technologies

LED PX8143HDMG008XTMA1

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
DZ950N44KS02HPSA1
Infineon Technologies

DIODE GEN PURP 4.4KV 950A PB70-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4400 V
  • Current - Average Rectified (Io): 950A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 4400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB70-1
  • Operating Temperature - Junction: 160°C (Max)
封裝: -
Request a Quote
4400 V
950A
-
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 4400 V
-
Chassis Mount
Module
BG-PB70-1
160°C (Max)
D1230N12TXPSA1
Infineon Technologies

DIODE GEN PURP 1.2KV 1230A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 1230A
  • Voltage - Forward (Vf) (Max) @ If: 1.063 V @ 800 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1200 V
1230A
1.063 V @ 800 A
Standard Recovery >500ns, > 200mA (Io)
-
50 mA @ 1200 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
D6001N50TXPSA1
Infineon Technologies

DIODE GEN PURP 5KV 8010A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 5000 V
  • Current - Average Rectified (Io): 8010A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400 mA @ 5000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
Request a Quote
5000 V
8010A
1.3 V @ 6000 A
Standard Recovery >500ns, > 200mA (Io)
-
400 mA @ 5000 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 160°C
DZ1100N22KTIMHPSA1
Infineon Technologies

DIODE GP 2.2KV 1100A PB70AT-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io): 1100A
  • Voltage - Forward (Vf) (Max) @ If: 1.11 V @ 3000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 mA @ 2200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB70AT-1
  • Operating Temperature - Junction: 150°C (Max)
封裝: -
Request a Quote
2200 V
1100A
1.11 V @ 3000 A
Standard Recovery >500ns, > 200mA (Io)
-
80 mA @ 2200 V
-
Chassis Mount
Module
BG-PB70AT-1
150°C (Max)
D251N20BXPSA1
Infineon Technologies

DIODE GEN PURP 2KV 255A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000 V
  • Current - Average Rectified (Io): 255A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
2000 V
255A
-
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 2000 V
-
Stud Mount
DO-205AA, DO-8, Stud
-
-40°C ~ 180°C
D2601N85TXPSA1
Infineon Technologies

DIODE GEN PURP 8.5KV 3040A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 8500 V
  • Current - Average Rectified (Io): 3040A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 8500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 160°C
封裝: -
Request a Quote
8500 V
3040A
-
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 8500 V
-
Chassis Mount
DO-200AE
-
-40°C ~ 160°C
IDWD150E65E7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 200A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 150 A
  • Speed: Fast Recovery =< 500ns, > 5A (Io)
  • Reverse Recovery Time (trr): 97 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存387
650 V
200A
2.1 V @ 150 A
Fast Recovery =< 500ns, > 5A (Io)
97 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C
IDK20G120C5XTMA1
Infineon Technologies

DIODE SIL CARB 1.2KV 56A TO263-1

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 56A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
  • Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-2-1
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
Request a Quote
1200 V
56A
1.8 V @ 20 A
No Recovery Time > 500mA (Io)
-
123 µA @ 1200 V
1050pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
PG-TO263-2-1
-55°C ~ 175°C
D770N18TXPSA1
Infineon Technologies

DIODE GEN PURP 1.8KV 770A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io): 770A
  • Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 400 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 180°C
封裝: -
Request a Quote
1800 V
770A
1.08 V @ 400 A
Standard Recovery >500ns, > 200mA (Io)
-
30 mA @ 1800 V
-
Clamp On
DO-200AA, A-PUK
-
-40°C ~ 180°C
IDWD15G120C5XKSA1
Infineon Technologies

DIODE SIL CARB 1.2KV 49A TO247-2

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 49A
  • Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
  • Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2
  • Operating Temperature - Junction: -55°C ~ 175°C
封裝: -
庫存684
1200 V
49A
1.65 V @ 15 A
No Recovery Time > 500mA (Io)
0 ns
124 µA @ 1200 V
1050pF @ 1V, 1MHz
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
65DN06B02ELEMXPSA1
Infineon Technologies

DIODE GP 600V 15130A D-ELEM-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15130A
  • Voltage - Forward (Vf) (Max) @ If: 890 mV @ 8000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 mA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Clamp On
  • Package / Case: DO-200AC, K-PUK
  • Supplier Device Package: BG-D-ELEM-1
  • Operating Temperature - Junction: 180°C (Max)
封裝: -
庫存15
600 V
15130A
890 mV @ 8000 A
Standard Recovery >500ns, > 200mA (Io)
-
100 mA @ 600 V
-
Clamp On
DO-200AC, K-PUK
BG-D-ELEM-1
180°C (Max)
BAS70-02WE6327
Infineon Technologies

DIODE SCHOTTKY 70V 70MA SCD80-2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 70 V
  • Current - Average Rectified (Io): 70mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 100 ps
  • Current - Reverse Leakage @ Vr: 100 nA @ 50 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-80
  • Supplier Device Package: PG-SCD80-2
  • Operating Temperature - Junction: 150°C
封裝: -
Request a Quote
70 V
70mA
1 V @ 15 mA
Small Signal =< 200mA (Io), Any Speed
100 ps
100 nA @ 50 V
1.5pF @ 0V, 1MHz
Surface Mount
SC-80
PG-SCD80-2
150°C
D1600U45X122XPSA1
Infineon Technologies

DIODE GP 4.5KV 1560A D12026K-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4500 V
  • Current - Average Rectified (Io): 1560A
  • Voltage - Forward (Vf) (Max) @ If: 4.3 V @ 2500 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150 mA @ 4500 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AE
  • Supplier Device Package: BG-D12026K-1
  • Operating Temperature - Junction: 140°C (Max)
封裝: -
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4500 V
1560A
4.3 V @ 2500 A
Standard Recovery >500ns, > 200mA (Io)
-
150 mA @ 4500 V
-
Chassis Mount
DO-200AE
BG-D12026K-1
140°C (Max)
IDWD60E65E7XKSA1
Infineon Technologies

INDUSTRY 14

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 99 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: PG-TO247-2-2
  • Operating Temperature - Junction: -40°C ~ 175°C
封裝: -
庫存720
650 V
100A
2.1 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
99 ns
20 µA @ 650 V
-
Through Hole
TO-247-2
PG-TO247-2-2
-40°C ~ 175°C