圖片 |
零件編號 |
製造商 |
描述 |
封裝 |
庫存 |
數量 |
Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
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Infineon Technologies |
DIODE GEN PURP 6.5KV 1070A
|
封裝: - |
Request a Quote |
|
6500 V | 1070A | 1.9 V @ 1200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 6500 V | - | Clamp On | DO-200AB, B-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GP 1.2KV 75A WAFER
|
封裝: - |
Request a Quote |
|
1200 V | 75A | 2.05 V @ 75 A | Standard Recovery >500ns, > 200mA (Io) | - | 14 µA @ 1200 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 2KV 230A
|
封裝: - |
Request a Quote |
|
2000 V | 230A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 2000 V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |
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Infineon Technologies |
DIODE GP 1.4KV 260A PB50ND-1
|
封裝: - |
Request a Quote |
|
1400 V | 260A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1400 V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
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Infineon Technologies |
DIODE SIL CARB 600V 12A TO220-1
|
封裝: - |
庫存1,503 |
|
600 V | 12A | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
ACCY GATE LEAD FOR MODULE
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GEN PURP 600V 150A DIE
|
封裝: - |
Request a Quote |
|
600 V | 150A | 1.9 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
||
Infineon Technologies |
LED PX8895EDQGG005XUMA1
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GP 1.2KV 350A PB50ND-1
|
封裝: - |
Request a Quote |
|
1200 V | 350A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1200 V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
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Infineon Technologies |
DIODE GEN PURP 600V 15A DIE
|
封裝: - |
Request a Quote |
|
600 V | 15A | 1.95 V @ 15 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 600V 6A DIE
|
封裝: - |
Request a Quote |
|
600 V | 6A | 1.6 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Die | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTT 40V 200MA TSLP-2-17
|
封裝: - |
Request a Quote |
|
40 V | 200mA | 550 mV @ 200 mA | Small Signal =< 200mA (Io), Any Speed | - | 10 µA @ 40 V | 7pF @ 5V, 1MHz | Surface Mount | SOD-882 | PG-TSLP-2-17 | 150°C |
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Infineon Technologies |
DIODE GP 1.7KV 300A WAFER
|
封裝: - |
Request a Quote |
|
1700 V | 300A | 1.8 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1700 V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SIL CARB 600V 5A TO220-2
|
封裝: - |
Request a Quote |
|
600 V | 5A | 1.7 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 170pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 9KV 3040A
|
封裝: - |
Request a Quote |
|
9000 V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 9000 V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
||
Infineon Technologies |
DIODE GEN PURP 6KV 1070A
|
封裝: - |
Request a Quote |
|
6000 V | 1070A | 1.9 V @ 1200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 6000 V | - | Clamp On | DO-200AB, B-PUK | - | -40°C ~ 160°C |
||
Infineon Technologies |
DIODE SIL CARB 600V 6A TO220-2-1
|
封裝: - |
庫存219 |
|
600 V | 6A | 2.3 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 600 V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE GP 1.2KV 100A WAFER
|
封裝: - |
Request a Quote |
|
1200 V | 100A | 2.05 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 18 µA @ 1200 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 2.5KV 210A
|
封裝: - |
Request a Quote |
|
2500 V | 210A | 2.15 V @ 650 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 mA @ 2500 V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 140°C |
||
Infineon Technologies |
DIODE GP 1.2KV 15A WAFER
|
封裝: - |
Request a Quote |
|
1200 V | 15A | 1.97 V @ 7.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 4.5KV 445A
|
封裝: - |
Request a Quote |
|
4500 V | 445A | 4.15 V @ 1200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 4500 V | - | Clamp On | DO-200AB, B-PUK | - | -40°C ~ 125°C |
||
Infineon Technologies |
LED PX3746HDNSM1401XTMA1
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GP 1.2KV 100A WAFER
|
封裝: - |
Request a Quote |
|
1200 V | 100A | 1.97 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 27 µA @ 1200 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
||
Infineon Technologies |
SIC CHIP
|
封裝: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
DIODE GP 1.2KV 400A DSW41-1
|
封裝: - |
Request a Quote |
|
1200 V | 400A | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | BG-DSW41-1 | BG-DSW41-1 | 180°C (Max) |
||
Infineon Technologies |
DIODE SIL CARB 600V 8A TO252-3
|
封裝: - |
庫存7,050 |
|
600 V | 8A | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPAK (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
||
Infineon Technologies |
DIODE GEN PURP 1.4KV 450A FL54
|
封裝: - |
Request a Quote |
|
1400 V | 450A | - | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 1400 V | - | Screw Mount | Nonstandard | FL54 | -40°C ~ 180°C |
||
Infineon Technologies |
DIODE GP 600V 9A WAFER
|
封裝: - |
Request a Quote |
|
600 V | 9A | 1.6 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27 µA @ 600 V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |