頁 3 - Fujitsu Electronics America, Inc. 產品 - 記憶體 | 黑森爾電子
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Fujitsu Electronics America, Inc. 產品 - 記憶體

記錄 69
頁  3/3
圖片
零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MB85R256GPF-G-BNDE1
Fujitsu Electronics America, Inc.

IC FRAM 256KBIT PAR 28SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,344
FRAM
FRAM (Ferroelectric RAM)
256Kb (32K x 8)
Parallel
-
150ns
150ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MB85R256GPF-G-BND-ERE1
Fujitsu Electronics America, Inc.

IC FRAM 256KBIT PAR 28SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存6,864
FRAM
FRAM (Ferroelectric RAM)
256Kb (32K x 8)
Parallel
-
150ns
150ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
MB85R256FPF-G-BND-ERE1
Fujitsu Electronics America, Inc.

IC FRAM 256KBIT PAR 28SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,536
FRAM
FRAM (Ferroelectric RAM)
256Kb (32K x 8)
Parallel
-
150ns
150ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
hot MB85RC16VPNF-G-JNERE1
Fujitsu Electronics America, Inc.

IC FRAM 16KBIT 400KHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 550ns
  • Voltage - Supply: 3 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存32,760
FRAM
FRAM (Ferroelectric RAM)
16Kb (2K x 8)
I2C
1MHz
-
550ns
3 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
MB85R256FPF-G-BNDE1
Fujitsu Electronics America, Inc.

IC FRAM 256KBIT 150NS 28SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.342", 8.69mm Width)
  • Supplier Device Package: 28-SOP
封裝: 28-SOIC (0.342", 8.69mm Width)
庫存2,432
FRAM
FRAM (Ferroelectric RAM)
256Kb (32K x 8)
Parallel
-
150ns
150ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
28-SOIC (0.342", 8.69mm Width)
28-SOP
MB85R4002ANC-GE1
Fujitsu Electronics America, Inc.

IC FRAM 4MBIT 150NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 48-TSOP
封裝: 48-TFSOP (0.488", 12.40mm Width)
庫存6,608
FRAM
FRAM (Ferroelectric RAM)
4Mb (256K x 16)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.488", 12.40mm Width)
48-TSOP
MB85R4001ANC-GE1
Fujitsu Electronics America, Inc.

IC FRAM 4MBIT 150NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 48-TSOP
封裝: 48-TFSOP (0.488", 12.40mm Width)
庫存2,448
FRAM
FRAM (Ferroelectric RAM)
4Mb (512K x 8)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.488", 12.40mm Width)
48-TSOP
hot MB85R1002ANC-GE1
Fujitsu Electronics America, Inc.

IC FRAM 1MBIT 150NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 48-TSOP
封裝: 48-TFSOP (0.488", 12.40mm Width)
庫存5,680
FRAM
FRAM (Ferroelectric RAM)
1Mb (64K x 16)
Parallel
-
150ns
150ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.488", 12.40mm Width)
48-TSOP
MB85RS2MTPH-G-JNE1
Fujitsu Electronics America, Inc.

IC FRAM 2MBIT 40MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 25MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
封裝: 8-DIP (0.300", 7.62mm)
庫存2,768
FRAM
FRAM (Ferroelectric RAM)
2Mb (256K x 8)
SPI
25MHz
-
-
1.8 V ~ 3.6 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
MB85RS2MTPF-G-JNERE2
Fujitsu Electronics America, Inc.

IC FRAM 2MBIT 40MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 25MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.209", 5.30mm Width)
庫存3,472
FRAM
FRAM (Ferroelectric RAM)
2Mb (256K x 8)
SPI
25MHz
-
-
1.8 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP
hot MB85R256FPFCN-G-BNDE1
Fujitsu Electronics America, Inc.

IC FRAM 256KBIT 150NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP I
封裝: 28-TSSOP (0.465", 11.80mm Width)
庫存14,724
FRAM
FRAM (Ferroelectric RAM)
256Kb (32K x 8)
Parallel
-
150ns
150ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP I
hot MB85R256FPNF-G-JNERE2
Fujitsu Electronics America, Inc.

IC FRAM 256KBIT 150NS 28SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 150ns
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.342", 8.69mm Width)
  • Supplier Device Package: 28-SOP
封裝: 28-SOIC (0.342", 8.69mm Width)
庫存600,000
FRAM
FRAM (Ferroelectric RAM)
256Kb (32K x 8)
Parallel
-
150ns
150ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
28-SOIC (0.342", 8.69mm Width)
28-SOP
MB85RS256APNF-G-JNE1
Fujitsu Electronics America, Inc.

IC FRAM 256KBIT 25MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 25MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存3,888
FRAM
FRAM (Ferroelectric RAM)
256Kb (32K x 8)
SPI
25MHz
-
-
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP