Bourns Inc. 產品 - 二極體 - 整流器 - 陣列 | 黑森爾電子
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Bourns Inc. 產品 - 二極體 - 整流器 - 陣列

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封裝
庫存
數量
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
CDSOT23-S2004
Bourns Inc.

DIODE ARRAY GP 240V 225MA SOT23

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 240V
  • Current - Average Rectified (Io) (per Diode): 225mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 240V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封裝: TO-236-3, SC-59, SOT-23-3
庫存3,424
Standard
240V
225mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
100nA @ 240V
-55°C ~ 150°C
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BSDW20S65C6
Bourns Inc.

DIODE ARR SIC SCHOT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
庫存7,179
SiC (Silicon Carbide) Schottky
650 V
20A
1.45 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 650 V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247
BSDW20G120C2
Bourns Inc.

DIODE ARR SIC SCHOT 1200V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1.2 kV
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
庫存8,964
SiC (Silicon Carbide) Schottky
1200 V
20A
1.6 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 1.2 kV
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247
BSDW20G65C2
Bourns Inc.

DIODE ARR SIC SCHOT 650V TO247

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
封裝: -
庫存7,200
SiC (Silicon Carbide) Schottky
650 V
20A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
-55°C ~ 175°C
Through Hole
TO-247-3
TO-247