Bourns Inc. 產品 - 二極體 - 整流器 - 陣列

零件編號	製造商	描述	封裝	庫存	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Mounting Type	Package / Case	Supplier Device Package
CDSOT23-S2004	Bourns Inc.	DIODE ARRAY GP 240V 225MA SOT23 Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 240V Current - Average Rectified (Io) (per Diode): 225mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 240V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存3,424	Standard	240V	225mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 240V	-55°C ~ 150°C	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
BSDW20S65C6	Bourns Inc.	DIODE ARR SIC SCHOT 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 650 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: -	庫存7,179	SiC (Silicon Carbide) Schottky	650 V	20A	1.45 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 650 V	-55°C ~ 175°C	Through Hole	TO-247-3	TO-247
BSDW20G120C2	Bourns Inc.	DIODE ARR SIC SCHOT 1200V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 1.2 kV Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: -	庫存8,964	SiC (Silicon Carbide) Schottky	1200 V	20A	1.6 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 1.2 kV	-55°C ~ 175°C	Through Hole	TO-247-3	TO-247
BSDW20G65C2	Bourns Inc.	DIODE ARR SIC SCHOT 650V TO247 Diode Configuration: 1 Pair Common Cathode Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Operating Temperature - Junction: -55°C ~ 175°C Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247	封裝: -	庫存7,200	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	-55°C ~ 175°C	Through Hole	TO-247-3	TO-247