頁 98 - Toshiba Semiconductor and Storage 產品

零件編號	製造商	描述	封裝	庫存
GT10G131(TE12L,Q)	Toshiba Semiconductor and Storage	IGBT 400V 1W 8-SOIC IGBT Type: - Voltage - Collector Emitter Breakdown (Max): 400V Current - Collector (Ic) (Max): - Current - Collector Pulsed (Icm): 200A Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A Power - Max: 1W Switching Energy: - Input Type: Standard Gate Charge: - Td (on/off) @ 25°C: 3.1µs/2µs Test Condition: - Reverse Recovery Time (trr): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP (5.5x6.0)	封裝: 8-SOIC (0.173", 4.40mm Width)	庫存2,432
TPCP8103-H(TE85LFM	Toshiba Semiconductor and Storage	MOSFET P-CH 40V 4.8A PS-8 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 840mW (Ta) Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.4A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PS-8 (2.9x2.4) Package / Case: 8-SMD, Flat Lead	封裝: 8-SMD, Flat Lead	庫存2,064
TK17A80W,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 800V 17A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 300V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V Operating Temperature: 150°C Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存7,704
TPH4R003NL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 63A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 200µA Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封裝: 8-PowerVDFN	庫存36,648
2SC2655-O(TE6,F,M)	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V TO226-3 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	封裝: TO-226-3, TO-92-3 Long Body	庫存6,928
RN2112,LF(CB	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1W SSM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	封裝: SC-75, SOT-416	庫存71,310
RN1905,LF	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.2W US6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存24,888
CRY68(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE ZENER 6.8V 700MW SFLAT Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±10% Power - Max: 700mW Impedance (Max) (Zzt): 60 Ohms Current - Reverse Leakage @ Vr: 10µA @ 3V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5)	封裝: SOD-123F	庫存25,032
TB6551FG(O,EL,DRY)	Toshiba Semiconductor and Storage	IC MOTOR CONTROLLER PAR 24SSOP Motor Type - Stepper: - Motor Type - AC, DC: Brushless DC (BLDC) Function: Controller - Commutation, Direction Management Output Configuration: Pre-Driver - Half Bridge (3) Interface: Parallel Technology: Bi-CMOS Step Resolution: - Applications: Fan Controller Current - Output: - Voltage - Supply: 6 V ~ 10 V Voltage - Load: - Operating Temperature: -30°C ~ 115°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOP (0.236", 6.00mm Width) Supplier Device Package: 24-SSOP	封裝: 24-SOP (0.236", 6.00mm Width)	庫存6,496
TB62212FTAG,C8,EL	Toshiba Semiconductor and Storage	IC MOTOR DRIVER PAR 48QFN Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (8) Interface: Parallel Technology: Power MOSFET Step Resolution: - Applications: General Purpose Current - Output: 2A Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 10 V ~ 38 V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	封裝: 48-VFQFN Exposed Pad	庫存16,632
TC7SPN3125TU,LF	Toshiba Semiconductor and Storage	BUS BUFFER UNI UF6 Translator Type: Voltage Level Channel Type: Unidirectional Number of Circuits: 1 Channels per Circuit: 1 Voltage - VCCA: 1.1V ~ 2.7V Voltage - VCCB: 1.65V ~ 3.6V Input Signal: - Output Signal: - Output Type: Tri-State, Non-Inverted Data Rate: - Operating Temperature: -40°C ~ 85°C (TA) Features: - Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	封裝: 6-SMD, Flat Leads	庫存792,000
TC7WP3125FK(T5L,F)	Toshiba Semiconductor and Storage	IC BUS SWITCH SPST DUAL US8 Type: Bus Switch Circuit: 2 x 1:1 Independent Circuits: 1 Current - Output High, Low: 12mA, 12mA Voltage Supply Source: Dual Supply Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	封裝: 8-VFSOP (0.091", 2.30mm Width)	庫存24,534
TC74VHCT74AFTEL	Toshiba Semiconductor and Storage	IC D-TYPE POS TRG DUAL 14TSSOP Function: Set(Preset) and Reset Type: D-Type Output Type: Differential Number of Elements: 2 Number of Bits per Element: 1 Clock Frequency: 140MHz Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Iq): 2µA Input Capacitance: 4pF Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封裝: 14-TSSOP (0.173", 4.40mm Width)	庫存4,176
TLP290(TP,SE	Toshiba Semiconductor and Storage	OPTOISOLATOR 3.75KV TRANS 4-SO Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55°C ~ 110°C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm) Supplier Device Package: 4-SO	封裝: 4-SOIC (0.179", 4.55mm)	庫存4,248
TLP2770(D4,E	Toshiba Semiconductor and Storage	OPTOISO 5KV TRI-STATE S06L Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/µs Input Type: DC Output Type: Tri-State Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Rise / Fall Time (Typ): 1.3ns, 1ns Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO	封裝: 6-SOIC (0.295", 7.50mm Width)	庫存7,974
TLP116A(E)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV PUSH PULL SO6-5 Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 10kV/µs Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 20MBd Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Rise / Fall Time (Typ): 15ns, 15ns Voltage - Forward (Vf) (Typ): 1.58V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead	封裝: 6-SOIC (0.179", 4.55mm Width) 5 Leads	庫存3,400
TC4538BP(N,F)	Toshiba Semiconductor and Storage	IC MULTIVIBRATR 100NS 16DIP Logic Type: Monostable Independent Circuits: 2 Schmitt Trigger Input: No Propagation Delay: 100ns Current - Output High, Low: 9mA, 15mA Voltage - Supply: 3V ~ 18V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	封裝: 16-DIP (0.300", 7.62mm)	庫存3,504
74HC273D	Toshiba Semiconductor and Storage	IC FF D-TYPE SNGL 8BIT 20SOIC Function: Master Reset Type: D-Type Output Type: Non-Inverted Number of Elements: 1 Number of Bits per Element: 8 Clock Frequency: 66MHz Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF Trigger Type: Positive Edge Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2 V ~ 6 V Current - Quiescent (Iq): 4µA Input Capacitance: 3pF Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width)	封裝: 20-SOIC (0.295", 7.50mm Width)	庫存6,304
74VHC126FT	Toshiba Semiconductor and Storage	IC BUF NON-INVERT 5.5V 14TSSOP Logic Type: Buffer, Non-Inverting Number of Elements: 4 Number of Bits per Element: 1 Input Type: - Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	封裝: 14-TSSOP (0.173", 4.40mm Width)	庫存4,368
TMP86PH06UG(C,JZ)	Toshiba Semiconductor and Storage	IC MCU 8BIT 16KB OTP 44LQFP Core Processor: - Core Size: 8-Bit Speed: 16MHz Connectivity: EBI/EMI Peripherals: - Number of I/O: 8 Program Memory Size: 16KB (16K x 8) Program Memory Type: OTP EEPROM Size: - RAM Size: 512 x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: - Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 44-LQFP Supplier Device Package: 44-LQFP (10x10)	封裝: 44-LQFP	庫存8,028
TB9051FTG,EL	Toshiba Semiconductor and Storage	MOTOR CONTROLLER SINGLE CHANNEL Motor Type - Stepper: - Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Pre-Driver - Half Bridge (2) Interface: PWM Technology: Bi-CMOS Step Resolution: - Applications: Automotive Current - Output: 6A Voltage - Supply: 4.5V ~ 5.5V Voltage - Load: - Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 28-PowerQFN Supplier Device Package: 28-QFN (6x6)	封裝: 28-PowerQFN	庫存7,104
TCR5BM12,L3F	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) LINEAR VOLTAGE Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): - Voltage Dropout (Max): 0.15V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): 36µA Current - Supply (Max): - PSRR: 98dB (1kHz) Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XDFN Exposed Pad Supplier Device Package: 5-DFNB (1.2x1.2)	封裝: 4-XDFN Exposed Pad	庫存2,880
CRG05-TE85L-Q-M	Toshiba Semiconductor and Storage	DIODE GEN PURP 800V 1A S-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 800 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: -40°C ~ 150°C	封裝: -	庫存2,904
RN2902-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q 2-IN-1 (POINT-SYM) PN Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存9,000
2SA1971-TE12L-F	Toshiba Semiconductor and Storage	PB-FREE POWER TRANSISTOR PW-MINI Transistor Type: PNP Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 500 mW Frequency - Transition: 35MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	封裝: -	庫存1,830
2SC6026MFV-Y-L3F	Toshiba Semiconductor and Storage	TRANS NPN 50V 0.15A VESM Transistor Type: NPN Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 150 mW Frequency - Transition: 60MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封裝: -	庫存48,078
TCR2LE095-LM-CT	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) IOUT: 200MA PD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 0.95V Voltage - Output (Max): - Voltage Dropout (Max): 1.48V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封裝: -	Request a Quote
RN1106MFV-L3XHF-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V 0.1A VESM Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 4.7 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封裝: -	庫存24,000

GT10G131(TE12L,Q)

Toshiba Semiconductor and Storage

IGBT 400V 1W 8-SOIC

IGBT Type: -
Voltage - Collector Emitter Breakdown (Max): 400V
Current - Collector (Ic) (Max): -
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 4V, 200A
Power - Max: 1W
Switching Energy: -
Input Type: Standard
Gate Charge: -
Td (on/off) @ 25°C: 3.1µs/2µs
Test Condition: -
Reverse Recovery Time (trr): -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP (5.5x6.0)

封裝: 8-SOIC (0.173", 4.40mm Width)

庫存2,432

TPCP8103-H(TE85LFM

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 4.8A PS-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 840mW (Ta)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PS-8 (2.9x2.4)
Package / Case: 8-SMD, Flat Lead

封裝: 8-SMD, Flat Lead

庫存2,064

TK17A80W,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 800V 17A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 300V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 290 mOhm @ 8.5A, 10V
Operating Temperature: 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存7,704

TPH4R003NL,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 63A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 20A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

庫存36,648

2SC2655-O(TE6,F,M)

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 900mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD

封裝: TO-226-3, TO-92-3 Long Body

庫存6,928

RN2112,LF(CB

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1W SSM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM

封裝: SC-75, SOT-416

庫存71,310

RN1905,LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存24,888

CRY68(TE85L,Q,M)

Toshiba Semiconductor and Storage

DIODE ZENER 6.8V 700MW SFLAT

Voltage - Zener (Nom) (Vz): 6.8V
Tolerance: ±10%
Power - Max: 700mW
Impedance (Max) (Zzt): 60 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
Operating Temperature: -40°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)

封裝: SOD-123F

庫存25,032

TB6551FG(O,EL,DRY)

Toshiba Semiconductor and Storage

IC MOTOR CONTROLLER PAR 24SSOP

Motor Type - Stepper: -
Motor Type - AC, DC: Brushless DC (BLDC)
Function: Controller - Commutation, Direction Management
Output Configuration: Pre-Driver - Half Bridge (3)
Interface: Parallel
Technology: Bi-CMOS
Step Resolution: -
Applications: Fan Controller
Current - Output: -
Voltage - Supply: 6 V ~ 10 V
Voltage - Load: -
Operating Temperature: -30°C ~ 115°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOP (0.236", 6.00mm Width)
Supplier Device Package: 24-SSOP

封裝: 24-SOP (0.236", 6.00mm Width)

庫存6,496

TB62212FTAG,C8,EL

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 48QFN

Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Half Bridge (8)
Interface: Parallel
Technology: Power MOSFET
Step Resolution: -
Applications: General Purpose
Current - Output: 2A
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 10 V ~ 38 V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Supplier Device Package: 48-QFN (7x7)

封裝: 48-VFQFN Exposed Pad

庫存16,632

TC7SPN3125TU,LF

Toshiba Semiconductor and Storage

BUS BUFFER UNI UF6

Translator Type: Voltage Level
Channel Type: Unidirectional
Number of Circuits: 1
Channels per Circuit: 1
Voltage - VCCA: 1.1V ~ 2.7V
Voltage - VCCB: 1.65V ~ 3.6V
Input Signal: -
Output Signal: -
Output Type: Tri-State, Non-Inverted
Data Rate: -
Operating Temperature: -40°C ~ 85°C (TA)
Features: -
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6

封裝: 6-SMD, Flat Leads

庫存792,000

TC7WP3125FK(T5L,F)

Toshiba Semiconductor and Storage

IC BUS SWITCH SPST DUAL US8

Type: Bus Switch
Circuit: 2 x 1:1
Independent Circuits: 1
Current - Output High, Low: 12mA, 12mA
Voltage Supply Source: Dual Supply
Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package: US8

封裝: 8-VFSOP (0.091", 2.30mm Width)

庫存24,534

TC74VHCT74AFTEL

Toshiba Semiconductor and Storage

IC D-TYPE POS TRG DUAL 14TSSOP

Function: Set(Preset) and Reset
Type: D-Type
Output Type: Differential
Number of Elements: 2
Number of Bits per Element: 1
Clock Frequency: 140MHz
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5 V ~ 5.5 V
Current - Quiescent (Iq): 2µA
Input Capacitance: 4pF
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封裝: 14-TSSOP (0.173", 4.40mm Width)

庫存4,176

TLP290(TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

Number of Channels: 1
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Current Transfer Ratio (Max): 600% @ 5mA
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Input Type: AC, DC
Output Type: Transistor
Voltage - Output (Max): 80V
Current - Output / Channel: 50mA
Voltage - Forward (Vf) (Typ): 1.25V
Current - DC Forward (If) (Max): 50mA
Vce Saturation (Max): 300mV
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 4-SOIC (0.179", 4.55mm)
Supplier Device Package: 4-SO

封裝: 4-SOIC (0.179", 4.55mm)

庫存4,248

TLP2770(D4,E

Toshiba Semiconductor and Storage

OPTOISO 5KV TRI-STATE S06L

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 5000Vrms
Common Mode Transient Immunity (Min): 20kV/µs
Input Type: DC
Output Type: Tri-State
Current - Output / Channel: 10mA
Data Rate: 20MBd
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Rise / Fall Time (Typ): 1.3ns, 1ns
Voltage - Forward (Vf) (Typ): 1.5V
Current - DC Forward (If) (Max): 8mA
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 6-SO

封裝: 6-SOIC (0.295", 7.50mm Width)

庫存7,974

TLP116A(E)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV PUSH PULL SO6-5

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 10kV/µs
Input Type: DC
Output Type: Push-Pull, Totem Pole
Current - Output / Channel: 10mA
Data Rate: 20MBd
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Rise / Fall Time (Typ): 15ns, 15ns
Voltage - Forward (Vf) (Typ): 1.58V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead

封裝: 6-SOIC (0.179", 4.55mm Width) 5 Leads

庫存3,400

TC4538BP(N,F)

Toshiba Semiconductor and Storage

IC MULTIVIBRATR 100NS 16DIP

Logic Type: Monostable
Independent Circuits: 2
Schmitt Trigger Input: No
Propagation Delay: 100ns
Current - Output High, Low: 9mA, 15mA
Voltage - Supply: 3V ~ 18V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-DIP

封裝: 16-DIP (0.300", 7.62mm)

庫存3,504

74HC273D

Toshiba Semiconductor and Storage

IC FF D-TYPE SNGL 8BIT 20SOIC

Function: Master Reset
Type: D-Type
Output Type: Non-Inverted
Number of Elements: 1
Number of Bits per Element: 8
Clock Frequency: 66MHz
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Trigger Type: Positive Edge
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2 V ~ 6 V
Current - Quiescent (Iq): 4µA
Input Capacitance: 3pF
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)

封裝: 20-SOIC (0.295", 7.50mm Width)

庫存6,304

74VHC126FT

Toshiba Semiconductor and Storage

IC BUF NON-INVERT 5.5V 14TSSOP

Logic Type: Buffer, Non-Inverting
Number of Elements: 4
Number of Bits per Element: 1
Input Type: -
Output Type: 3-State
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

封裝: 14-TSSOP (0.173", 4.40mm Width)

庫存4,368

TMP86PH06UG(C,JZ)

Toshiba Semiconductor and Storage

IC MCU 8BIT 16KB OTP 44LQFP

Core Processor: -
Core Size: 8-Bit
Speed: 16MHz
Connectivity: EBI/EMI
Peripherals: -
Number of I/O: 8
Program Memory Size: 16KB (16K x 8)
Program Memory Type: OTP
EEPROM Size: -
RAM Size: 512 x 8
Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
Data Converters: -
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 44-LQFP
Supplier Device Package: 44-LQFP (10x10)

封裝: 44-LQFP

庫存8,028

TB9051FTG,EL

Toshiba Semiconductor and Storage

MOTOR CONTROLLER SINGLE CHANNEL

Motor Type - Stepper: -
Motor Type - AC, DC: Brushed DC
Function: Driver - Fully Integrated, Control and Power Stage
Output Configuration: Pre-Driver - Half Bridge (2)
Interface: PWM
Technology: Bi-CMOS
Step Resolution: -
Applications: Automotive
Current - Output: 6A
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Load: -
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-PowerQFN
Supplier Device Package: 28-QFN (6x6)

封裝: 28-PowerQFN

庫存7,104

TCR5BM12,L3F

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) LINEAR VOLTAGE

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.15V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): 36µA
Current - Supply (Max): -
PSRR: 98dB (1kHz)
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XDFN Exposed Pad
Supplier Device Package: 5-DFNB (1.2x1.2)

封裝: 4-XDFN Exposed Pad

庫存2,880

CRG05-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 800V 1A S-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

庫存2,904

RN2902-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存9,000

2SA1971-TE12L-F

Toshiba Semiconductor and Storage

PB-FREE POWER TRANSISTOR PW-MINI

Transistor Type: PNP
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V
Power - Max: 500 mW
Frequency - Transition: 35MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI

封裝: -

庫存1,830

2SC6026MFV-Y-L3F

Toshiba Semiconductor and Storage

TRANS NPN 50V 0.15A VESM

Transistor Type: NPN
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Power - Max: 150 mW
Frequency - Transition: 60MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封裝: -

庫存48,078

TCR2LE095-LM-CT

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 0.95V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.48V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 2 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封裝: -

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RN1106MFV-L3XHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 4.7 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封裝: -

庫存24,000