頁 163 - Toshiba Semiconductor and Storage 產品 | 黑森爾電子
聯繫我們
SalesDept@heisener.com +86-755-83210559 ext. 805
登入/註冊
Language Translation

* Please refer to the English Version as our Official Version.

BOM
購物車 0

Toshiba Semiconductor and Storage 產品

記錄 4,549
頁  163/163
圖片
零件編號
製造商
描述
封裝
庫存
數量
GT10J312(Q)
Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 60W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 400ns/400ns
  • Test Condition: 300V, 10A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-220SM
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存2,992
TK40P03M1(T6RSS-Q)
Toshiba Semiconductor and Storage

MOSFET N-CH 30V 40A 3DP 2-7K1A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 10.8 mOhm @ 20A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: DP
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封裝: TO-252-3, DPak (2 Leads + Tab), SC-63
庫存7,600
2SK2847(F)
Toshiba Semiconductor and Storage

MOSFET N-CH 900V 8A TO-3PN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 85W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(N)IS
  • Package / Case: TO-3P-3, SC-65-3
封裝: TO-3P-3, SC-65-3
庫存5,424
TK39N60W5,S1VF
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 38.8A T0247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 74 mOhm @ 19.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封裝: TO-247-3
庫存21,132
hot 3SK291(TE85L,F)
Toshiba Semiconductor and Storage

MOSFET N-CH SMQ

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 800MHz
  • Gain: 22.5dB
  • Voltage - Test: 6V
  • Current Rating: 30mA
  • Noise Figure: 2.5dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 12.5V
  • Package / Case: SC-61AA
  • Supplier Device Package: SMQ
封裝: SC-61AA
庫存54,072
RN1302,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W USM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
封裝: SC-70, SOT-323
庫存58,632
RN2905T5LFT
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 2.2k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: 6-TSSOP, SC-88, SOT-363
庫存4,304
RN2903,LF(CT
Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

  • Transistor Type: 2 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 22k
  • Resistor - Emitter Base (R2) (Ohms): 22k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 200mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: 6-TSSOP, SC-88, SOT-363
庫存27,378
hot 1SS190TE85LF
Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC59-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59-3
  • Operating Temperature - Junction: 125°C (Max)
封裝: TO-236-3, SC-59, SOT-23-3
庫存30,000
TA78L005AP,T6F(J
Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 150mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -30°C ~ 85°C
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: LSTM
封裝: TO-226-3, TO-92-3 Long Body
庫存6,688
TA4800AF(T6L1,Q)
Toshiba Semiconductor and Storage

IC REG LINEAR POS ADJ 1A 5HSIP

  • Output Configuration: Positive
  • Output Type: Adjustable
  • Number of Regulators: 1
  • Voltage - Input (Max): 16V
  • Voltage - Output (Min/Fixed): 1.5V
  • Voltage - Output (Max): 9V
  • Voltage Dropout (Max): 0.5V @ 500mA
  • Current - Output: 1A
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 1.7mA ~ 20mA
  • PSRR: 63dB (120Hz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-6, DPak (5 Leads + Tab)
  • Supplier Device Package: 5-HSIP
封裝: TO-252-6, DPak (5 Leads + Tab)
庫存4,944
hot TB7101F(T5L3.3,F)
Toshiba Semiconductor and Storage

IC REG BUCK 3.3V 1A SYNC 8SON

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Fixed
  • Number of Outputs: 1
  • Voltage - Input (Min): 4.3V
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.3V
  • Voltage - Output (Max): -
  • Current - Output: 1A
  • Frequency - Switching: 1MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: PS-8 (2.9x2.4)
封裝: 8-SMD, Flat Lead
庫存68,400
TBD62503APG
Toshiba Semiconductor and Storage

IC LOAD SWITCH 7CH 0.3A 16DIP

  • Switch Type: General Purpose
  • Number of Outputs: 7
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 50V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.75A
  • Rds On (Typ): -
  • Input Type: Inverting
  • Features: -
  • Fault Protection: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-DIP
封裝: 16-DIP (0.300", 7.62mm)
庫存7,668
TCK1024G,LF
Toshiba Semiconductor and Storage

IC PWR SWITCH P-CHAN 1:1 WCSP6E

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: On/Off
  • Voltage - Load: 1.4 V ~ 5.5 V
  • Voltage - Supply (Vcc/Vdd): -
  • Current - Output (Max): 1.54A
  • Rds On (Typ): 31 mOhm
  • Input Type: Non-Inverting
  • Features: Load Discharge
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 6-UFBGA, WLCSP
  • Supplier Device Package: 6-WCSPE (0.80x1.2)
封裝: 6-UFBGA, WLCSP
庫存48,708
TC74LVX02FTELM
Toshiba Semiconductor and Storage

IC GATE NOR 4CH 2-INP 14-TSSOP

  • Logic Type: NOR Gate
  • Number of Circuits: 4
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 3.6 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 4mA, 4mA
  • Logic Level - Low: 0.5 V ~ 0.8 V
  • Logic Level - High: 1.5 V ~ 2.4 V
  • Max Propagation Delay @ V, Max CL: 10.1ns @ 3.3V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 14-TSSOP
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
封裝: 14-TSSOP (0.173", 4.40mm Width)
庫存3,456
TC7PA34FU(T5L,F,T)
Toshiba Semiconductor and Storage

IC BUFFER NON-INV DUAL 6SSOP

  • Logic Type: Buffer, Non-Inverting
  • Number of Elements: 2
  • Number of Bits per Element: 1
  • Input Type: -
  • Output Type: Push-Pull
  • Current - Output High, Low: 24mA, 24mA
  • Voltage - Supply: 1.8 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: 6-TSSOP, SC-88, SOT-363
庫存3,824
DF2B7M2SL,L3F
Toshiba Semiconductor and Storage

TVS DIODE 5VWM 20VC

  • Type: Steering (Rail to Rail)
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 5V (Max)
  • Voltage - Breakdown (Min): 6V
  • Voltage - Clamping (Max) @ Ipp: 20V
  • Current - Peak Pulse (10/1000µs): 2A (8/20µs)
  • Power - Peak Pulse: 40W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 0.2pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: SL2
封裝: 0201 (0603 Metric)
庫存4,842
DF2S30FS,L3M
Toshiba Semiconductor and Storage

TVS DIODE 23VWM

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 23V (Max)
  • Voltage - Breakdown (Min): 28V
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: -
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 7pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-923
  • Supplier Device Package: SOD-923
封裝: SOD-923
庫存945,546
4N36(SHORT,F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRANS W/BASE 6DIP

  • Number of Channels: 1
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 40% @ 10mA
  • Current Transfer Ratio (Max): -
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): -
  • Input Type: DC
  • Output Type: Transistor with Base
  • Voltage - Output (Max): 30V
  • Current - Output / Channel: 100mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 60mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Through Hole
  • Package / Case: 6-DIP (0.300", 7.62mm)
  • Supplier Device Package: 6-DIP
封裝: 6-DIP (0.300", 7.62mm)
庫存3,834
TCR2EE14,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT1.4V DROPOUT180MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,096
TCR2EE125,LM(CT
Toshiba Semiconductor and Storage

200MA LDO VOUT1.25V DROPOUT180MV

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: -
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: -
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存4,896
TCR3UM28A,LF
Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) LINEAR VOLTAGE

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 2.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.327V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Current Limit, Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-UDFN Exposed Pad
  • Supplier Device Package: 4-DFN (1x1)
封裝: 4-UDFN Exposed Pad
庫存3,280
RN1106-LXHF-CT
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 4.7 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 100 mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封裝: -
庫存17,640
TCR3UF18A-LM-CT
Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 300MA SMV

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1.8V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.464V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): 680 nA
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: -
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
封裝: -
庫存21,660
2SC5354-TOJSQ-O
Toshiba Semiconductor and Storage

TRANSISTOR NPN TO-3PN

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
TK5A80E-S4X
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存150
TPH1R104PB-L1XHQ
Toshiba Semiconductor and Storage

MOSFET N-CH 40V 120A 8SOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 960mW (Ta), 132W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.14mOhm @ 60A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP Advance (5x5)
  • Package / Case: 8-PowerVDFN
封裝: -
庫存23,532
TK170V65Z-LQ
Toshiba Semiconductor and Storage

MOSFET N-CH 650V 18A 5DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 730µA
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad
封裝: -
庫存14,850