Toshiba Semiconductor and Storage 產品

TPC6011(TE85L,F,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A VS6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: VS-6 (2.9x2.8)
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封裝: SOT-23-6 Thin, TSOT-23-6

2SK3565(Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

TK25E60X,S1X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 25A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 7.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封裝: TO-220-3

TK12A50E,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 500V TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 6A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

封裝: TO-220-3 Full Pack, Isolated Tab

TPN1R603PL,L1Q

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 10V @ 10µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 80A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSON Advance (3.3x3.3)
• Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

TPH4R606NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 32A 8-SOP ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3965pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 63W (Tc)
• Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 16A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

封裝: 8-PowerVDFN

TPCP8203(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 40V 4.7A PS-8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 4.7A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 360mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SMD, Flat Lead
• Supplier Device Package: PS-8 (2.9x2.4)

封裝: 8-SMD, Flat Lead

2SA2154CT-Y(TPL3)

Toshiba Semiconductor and Storage

TRANS PNP 50V 0.1A

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 100mW
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

封裝: SC-101, SOT-883

DSF01S30SL,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SL2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Capacitance @ Vr, F: 9.02pF @ 2V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: SL2
• Operating Temperature - Junction: 125°C (Max)

封裝: 0201 (0603 Metric)

TA78L005AP,WNLF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

封裝: TO-226-3, TO-92-3 Long Body

TA58L08S(FJTN,QM)

Toshiba Semiconductor and Storage

IC REG LINEAR 250MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

封裝: TO-220-3 Full Pack

TB6549HQ(O)

Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 25HZIP

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (2)
• Interface: PWM, Serial
• Technology: Bi-CMOS
• Step Resolution: -
• Applications: General Purpose
• Current - Output: 4.5A
• Voltage - Supply: 10 V ~ 27 V
• Voltage - Load: 10 V ~ 27 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 25-SIP, Formed Leads
• Supplier Device Package: 25-HZIP

封裝: 25-SIP, Formed Leads

TC78S600FNG,C,ELHZ

Toshiba Semiconductor and Storage

IC STEP MOTOR DRVR PAR 20SSOP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1/2, 1/4, 1/8, 1/16
• Applications: General Purpose
• Current - Output: 800mA
• Voltage - Supply: 2.7 V ~ 5.5 V
• Voltage - Load: 2.5 V ~ 15 V
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-SSOP

封裝: 20-LSSOP (0.173", 4.40mm Width)

TC75W59FU,LF

Toshiba Semiconductor and Storage

IC COMP GP CMOS DUAL SM8

• Type: General Purpose
• Number of Elements: 2
• Output Type: Open Drain
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Voltage - Input Offset (Max): 1mV @ 5V
• Current - Input Bias (Max): 1pA @ 5V
• Current - Output (Typ): 25mA
• Current - Quiescent (Max): 220µA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 200ns
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Mounting Type: Surface Mount
• Supplier Device Package: SM8

封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TC75W55FU,LF

Toshiba Semiconductor and Storage

IC OPAMP GP 160KHZ SM8-8

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 0.08 V/µs
• Gain Bandwidth Product: 160kHz
• -3db Bandwidth: -
• Current - Input Bias: 1pA
• Voltage - Input Offset: 2mV
• Current - Supply: 20µA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: SM8

封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

TLBF1100C(T11(O

Toshiba Semiconductor and Storage

LED BLUE 2SMD

• Color: Blue
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 300mcd
• Lens Style/Size: Oval with Flat Top
• Voltage - Forward (Vf) (Typ): 3.2V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 470nm
• Wavelength - Peak: 468nm
• Features: -
• Package / Case: 2-SMD, J-Lead
• Supplier Device Package: SMD
• Size / Dimension: 3.20mm L x 2.90mm W
• Height (Max): 2.10mm

封裝: 2-SMD, J-Lead

TLP171A(F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 400MA 60V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 2 Ohm
• Load Current: 400mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

封裝: 4-SOP (0.173", 4.40mm)

TLP293(BLL-TPL,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 200% @ 500µA
• Current Transfer Ratio (Max): 400% @ 500µA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

封裝: 4-SOIC (0.179", 4.55mm)

74HC08D

Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14SOIC

• Logic Type: AND Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2 V ~ 6 V
• Current - Quiescent (Max): 1µA
• Current - Output High, Low: 5.2mA, 5.2mA
• Logic Level - Low: 0.5 V ~ 1.8 V
• Logic Level - High: 1.5 V ~ 4.2 V
• Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-SOIC
• Package / Case: 14-SOIC (0.154", 3.90mm Width)

封裝: 14-SOIC (0.154", 3.90mm Width)

TMP89FS60FG(Z

Toshiba Semiconductor and Storage

8 BIT MCU, PB-F TLCS870/C1 FAMIL

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

TCR2LN20,LF

Toshiba Semiconductor and Storage

200MA LDO VOUT=2.0V DROPOUT=200M

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.54V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 2µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

封裝: 4-XFDFN Exposed Pad

CMG05-TE12L-Q-M

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 1A M-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: -40°C ~ 150°C

封裝: -

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2SA1943-O-S1-F

Toshiba Semiconductor and Storage

PB-F POWER TRANSISTOR TO-3PL PC=

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 15 A
• Voltage - Collector Emitter Breakdown (Max): 230 V
• Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
• Current - Collector Cutoff (Max): 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
• Power - Max: 150 W
• Frequency - Transition: 30MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(L)

封裝: -

TK5P65W-RQ

Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR DPA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 170µA
• Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 60W (Tc)
• Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封裝: -

CMS15I40A-TE12L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 40V 1.5A M-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 40 V
• Capacitance @ Vr, F: 62pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: 150°C (Max)

封裝: -

RN2101-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SSM

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

封裝: -

7UL2G02FK-LF-B

Toshiba Semiconductor and Storage

L-MOS LVP IC VCC: 2.3V-3.6V, SOT

• Logic Type: NOR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 0.9V ~ 3.6V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.7V ~ 0.8V
• Logic Level - High: 1.7V ~ 2V
• Max Propagation Delay @ V, Max CL: 5.3ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: US8
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)

封裝: -

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TPCP8107-LF

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 8A PS-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: PS-8
• Package / Case: 8-SMD, Flat Lead

封裝: -