頁 26 - Toshiba Semiconductor and Storage 產品

零件編號	製造商	描述	封裝	庫存
TPC8038-H(TE12L,Q)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 12A SOP8 2-6J1B FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	封裝: 8-SOIC (0.173", 4.40mm Width)	庫存6,944
TK8R2A06PL,S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 28.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 4.5V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存15,744
SSM3J351R,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 60V 3.5A SOT-23F FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V Vgs (Max): +10V, -20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 134 mOhm @ 1A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: SOT-23F Package / Case: SOT-23-3 Flat Leads	封裝: SOT-23-3 Flat Leads	庫存23,826
TPCL4203(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 4CHIPLGA FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XLGA Supplier Device Package: 4-Chip LGA	封裝: 4-XLGA	庫存96,000
2SC3668-Y,F2PANF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	封裝: SC-71	庫存5,728
RN2904(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存4,864
CLH07(TE16L,NMB,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: L-FLAT? Supplier Device Package: L-FLAT? (4x5.5) Operating Temperature - Junction: -40°C ~ 150°C	封裝: L-FLAT?	庫存4,432
TA76431AS,T6MURF(J	Toshiba Semiconductor and Storage	IC REG LINEAR 100MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 100mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	封裝: TO-226-3, TO-92-3 Long Body	庫存6,704
TCR3DG10,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 300MA 4WCSPE Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSPE (0.65x0.65)	封裝: 4-XFBGA, CSPBGA	庫存37,920
TC62D723FNG,C,EL	Toshiba Semiconductor and Storage	IC LED DRIVER LIN 90MA 24HTSSOP Type: Linear Topology: Shift Register Internal Switch(s): Yes Number of Outputs: 16 Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Voltage - Output: 17V Current - Output / Channel: 90mA Frequency: - Dimming: - Applications: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 24-HTSSOP	封裝: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad	庫存5,856
TC4S11FT5LFT	Toshiba Semiconductor and Storage	IC GATE NAND 1CH 2-INP SMV Logic Type: NAND Gate Number of Circuits: 1 Number of Inputs: 2 Features: - Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 1µA Current - Output High, Low: 3.4mA, 3.4mA Logic Level - Low: 1.5 V ~ 4 V Logic Level - High: 3.5 V ~ 11 V Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	封裝: SC-74A, SOT-753	庫存2,272
74LCX08FT(AE)	Toshiba Semiconductor and Storage	IC GATE AND 4CH 2-INP 14TSSOP Logic Type: AND Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 1.65 V ~ 3.6 V Current - Quiescent (Max): 10µA Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.7 V ~ 0.8 V Logic Level - High: 1.7 V ~ 2 V Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-TSSOP Package / Case: 14-TSSOP (0.173", 4.40mm Width)	封裝: 14-TSSOP (0.173", 4.40mm Width)	庫存5,104
TC7WT241FUTE12LF	Toshiba Semiconductor and Storage	IC BUS BUFFER TRI-ST N-INV SM8 Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 1 Input Type: - Output Type: Push-Pull Current - Output High, Low: 6mA, 6mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	庫存25,866
TD62064AFG,S	Toshiba Semiconductor and Storage	IC DVR DARL SINK TTL 4CH 16HSOP Type: Driver Protocol: RS232 Number of Drivers/Receivers: 4/0 Duplex: - Receiver Hysteresis: - Data Rate: - Voltage - Supply: 5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs Supplier Device Package: 16-HSOP	封裝: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs	庫存7,328
TL1L2-WH1,L	Toshiba Semiconductor and Storage	LED LETERAS NEU WHITE 4000K 2SMD Color: White, Neutral CCT (K): 4000K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 120 lm (105 lm ~ 135 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 120 lm/W CRI (Color Rendering Index): 80 Current - Max: 1A Viewing Angle: 120° Mounting Type: Surface Mount Package / Case: 1414 (3535 Metric) Supplier Device Package: 3535 Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm) Height - Seated (Max): 0.080" (2.03mm)	封裝: 1414 (3535 Metric)	庫存4,626
DF2S12FS,L3M	Toshiba Semiconductor and Storage	TVS DIODE 9VWM 18.5VC Type: Zener Unidirectional Channels: 1 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 9V (Max) Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 18.5V Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: - Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: SOD-923	封裝: SOD-923	庫存104,292
TLP3475(TP,F	Toshiba Semiconductor and Storage	PHOTORELAY SPST-NO 300MA 50V Circuit: SPST-NO (1 Form A) Output Type: AC, DC On-State Resistance (Max): 1.5 Ohm Load Current: 300mA Voltage - Input: 1.27VDC Voltage - Load: 0 ~ 50 V Mounting Type: Surface Mount Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.096", 2.45mm) Supplier Device Package: 4-VSON Relay Type: Relay	封裝: 4-SMD (0.096", 2.45mm)	庫存2,556
TLP719(F)	Toshiba Semiconductor and Storage	OPTOISOLATOR 5KV TRANS 6-SDIP GW Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 20% @ 16mA Current Transfer Ratio (Max): - Turn On / Turn Off Time (Typ): 800ns, 800ns (Max) Rise / Fall Time (Typ): - Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 8mA Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 25mA Vce Saturation (Max): - Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.268", 6.80mm Width) Supplier Device Package: 6-SDIP Gull Wing	封裝: 6-SOIC (0.268", 6.80mm Width)	庫存4,338
74LCX573FT	Toshiba Semiconductor and Storage	IC LATCH OCTAL D-TYPE 20-TSSOP Logic Type: D-Type Transparent Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 1.65 V ~ 3.6 V Independent Circuits: 1 Delay Time - Propagation: 1.5ns Current - Output High, Low: 24mA, 24mA Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封裝: 20-TSSOP (0.173", 4.40mm Width)	庫存34,224
74HC540D	Toshiba Semiconductor and Storage	IC BUFFER INVERT 6V 20SOIC Logic Type: Buffer, Inverting Number of Elements: 1 Number of Bits per Element: 8 Input Type: - Output Type: 3-State Current - Output High, Low: 7.8mA, 7.8mA Voltage - Supply: 2 V ~ 6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-SOIC (0.295", 7.50mm Width) Supplier Device Package: 20-SOIC	封裝: 20-SOIC (0.295", 7.50mm Width)	庫存4,832
TC74VHC32F(EL,K,F)	Toshiba Semiconductor and Storage	X34 OR GATE VCC: 2-5.5V Logic Type: OR Gate Number of Circuits: 4 Number of Inputs: 2 Features: - Voltage - Supply: 2V ~ 5.5V Current - Quiescent (Max): 2µA Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.1V ~ 36V Logic Level - High: 2V ~ 4.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 14-SOP Package / Case: 14-SOIC (0.209", 5.30mm Width)	封裝: 14-SOIC (0.209", 5.30mm Width)	庫存18,306
RN2105MFV-L3F-CT	Toshiba Semiconductor and Storage	TRANS PREBIAS PNP 50V 0.1A VESM Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 2.2 kOhms Resistor - Emitter Base (R2) (Ohms): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	封裝: -	庫存2,529
RN2905FE-LF-CT	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封裝: -	Request a Quote
TC7SBL384CFU-LF	Toshiba Semiconductor and Storage	IC SWITCH SPST 18 OHM USV Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 18Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 1.65V ~ 3.6V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 6ns, 6ns -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 1µA Crosstalk: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: 5-SSOP	封裝: -	Request a Quote
TCR2EN34-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=3.4V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.4V Voltage - Output (Max): - Voltage Dropout (Max): 0.18V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封裝: -	庫存29,700
TPH2R003PL-LQ	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 100A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 830mW (Ta), 116W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Operating Temperature: 175°C Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	封裝: -	庫存33,024
TCR3DM33-RF-SE	Toshiba Semiconductor and Storage	LDO REG IOUT: 300MA VIN: 6V VOUT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.23V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	封裝: -	庫存22,410
TRS12E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 12A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 120 µA @ 650 V Capacitance @ Vr, F: 778pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	封裝: -	庫存1,134

TPC8038-H(TE12L,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 12A SOP8 2-6J1B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 10V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 6A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

封裝: 8-SOIC (0.173", 4.40mm Width)

庫存6,944

TK8R2A06PL,S4X

Toshiba Semiconductor and Storage

X35 PB-F POWER MOSFET TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs: 28.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 11.4 mOhm @ 8A, 4.5V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存15,744

SSM3J351R,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 3.5A SOT-23F

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
Vgs (Max): +10V, -20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 134 mOhm @ 1A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: SOT-23F
Package / Case: SOT-23-3 Flat Leads

封裝: SOT-23-3 Flat Leads

庫存23,826

TPCL4203(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 685pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XLGA
Supplier Device Package: 4-Chip LGA

封裝: 4-XLGA

庫存96,000

2SC3668-Y,F2PANF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

封裝: SC-71

庫存5,728

RN2904(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存4,864

CLH07(TE16L,NMB,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 400V 5A L-FLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: L-FLAT?
Supplier Device Package: L-FLAT? (4x5.5)
Operating Temperature - Junction: -40°C ~ 150°C

封裝: L-FLAT?

庫存4,432

TA76431AS,T6MURF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 100MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 100mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

封裝: TO-226-3, TO-92-3 Long Body

庫存6,704

TCR3DG10,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 300MA 4WCSPE

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-WCSPE (0.65x0.65)

封裝: 4-XFBGA, CSPBGA

庫存37,920

TC62D723FNG,C,EL

Toshiba Semiconductor and Storage

IC LED DRIVER LIN 90MA 24HTSSOP

Type: Linear
Topology: Shift Register
Internal Switch(s): Yes
Number of Outputs: 16
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Voltage - Output: 17V
Current - Output / Channel: 90mA
Frequency: -
Dimming: -
Applications: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad
Supplier Device Package: 24-HTSSOP

封裝: 24-TSSOP (0.173", 4.40mm Width) Exposed Pad

庫存5,856

TC4S11FT5LFT

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

Logic Type: NAND Gate
Number of Circuits: 1
Number of Inputs: 2
Features: -
Voltage - Supply: 3 V ~ 18 V
Current - Quiescent (Max): 1µA
Current - Output High, Low: 3.4mA, 3.4mA
Logic Level - Low: 1.5 V ~ 4 V
Logic Level - High: 3.5 V ~ 11 V
Max Propagation Delay @ V, Max CL: 80ns @ 15V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: SMV
Package / Case: SC-74A, SOT-753

封裝: SC-74A, SOT-753

庫存2,272

74LCX08FT(AE)

Toshiba Semiconductor and Storage

IC GATE AND 4CH 2-INP 14TSSOP

Logic Type: AND Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 1.65 V ~ 3.6 V
Current - Quiescent (Max): 10µA
Current - Output High, Low: 24mA, 24mA
Logic Level - Low: 0.7 V ~ 0.8 V
Logic Level - High: 1.7 V ~ 2 V
Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-TSSOP
Package / Case: 14-TSSOP (0.173", 4.40mm Width)

封裝: 14-TSSOP (0.173", 4.40mm Width)

庫存5,104

TC7WT241FUTE12LF

Toshiba Semiconductor and Storage

IC BUS BUFFER TRI-ST N-INV SM8

Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Number of Bits per Element: 1
Input Type: -
Output Type: Push-Pull
Current - Output High, Low: 6mA, 6mA
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: SM8

封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

庫存25,866

TD62064AFG,S

Toshiba Semiconductor and Storage

IC DVR DARL SINK TTL 4CH 16HSOP

Type: Driver
Protocol: RS232
Number of Drivers/Receivers: 4/0
Duplex: -
Receiver Hysteresis: -
Data Rate: -
Voltage - Supply: 5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Supplier Device Package: 16-HSOP

封裝: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs

庫存7,328

TL1L2-WH1,L

Toshiba Semiconductor and Storage

LED LETERAS NEU WHITE 4000K 2SMD

Color: White, Neutral
CCT (K): 4000K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 120 lm (105 lm ~ 135 lm)
Current - Test: 350mA
Voltage - Forward (Vf) (Typ): 2.85V
Lumens/Watt @ Current - Test: 120 lm/W
CRI (Color Rendering Index): 80
Current - Max: 1A
Viewing Angle: 120°
Mounting Type: Surface Mount
Package / Case: 1414 (3535 Metric)
Supplier Device Package: 3535
Size / Dimension: 0.138" L x 0.138" W (3.50mm x 3.50mm)
Height - Seated (Max): 0.080" (2.03mm)

封裝: 1414 (3535 Metric)

庫存4,626

DF2S12FS,L3M

Toshiba Semiconductor and Storage

TVS DIODE 9VWM 18.5VC

Type: Zener
Unidirectional Channels: 1
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 9V (Max)
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: SOD-923

封裝: SOD-923

庫存104,292

TLP3475(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 300MA 50V

Circuit: SPST-NO (1 Form A)
Output Type: AC, DC
On-State Resistance (Max): 1.5 Ohm
Load Current: 300mA
Voltage - Input: 1.27VDC
Voltage - Load: 0 ~ 50 V
Mounting Type: Surface Mount
Termination Style: SMD (SMT) Tab
Package / Case: 4-SMD (0.096", 2.45mm)
Supplier Device Package: 4-VSON
Relay Type: Relay

封裝: 4-SMD (0.096", 2.45mm)

庫存2,556

TLP719(F)

Toshiba Semiconductor and Storage

OPTOISOLATOR 5KV TRANS 6-SDIP GW

Number of Channels: 1
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 20% @ 16mA
Current Transfer Ratio (Max): -
Turn On / Turn Off Time (Typ): 800ns, 800ns (Max)
Rise / Fall Time (Typ): -
Input Type: DC
Output Type: Transistor
Voltage - Output (Max): 20V
Current - Output / Channel: 8mA
Voltage - Forward (Vf) (Typ): 1.65V
Current - DC Forward (If) (Max): 25mA
Vce Saturation (Max): -
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Supplier Device Package: 6-SDIP Gull Wing

封裝: 6-SOIC (0.268", 6.80mm Width)

庫存4,338

74LCX573FT

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

Logic Type: D-Type Transparent Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 1.65 V ~ 3.6 V
Independent Circuits: 1
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封裝: 20-TSSOP (0.173", 4.40mm Width)

庫存34,224

74HC540D

Toshiba Semiconductor and Storage

IC BUFFER INVERT 6V 20SOIC

Logic Type: Buffer, Inverting
Number of Elements: 1
Number of Bits per Element: 8
Input Type: -
Output Type: 3-State
Current - Output High, Low: 7.8mA, 7.8mA
Voltage - Supply: 2 V ~ 6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 20-SOIC

封裝: 20-SOIC (0.295", 7.50mm Width)

庫存4,832

TC74VHC32F(EL,K,F)

Toshiba Semiconductor and Storage

X34 OR GATE VCC: 2-5.5V

Logic Type: OR Gate
Number of Circuits: 4
Number of Inputs: 2
Features: -
Voltage - Supply: 2V ~ 5.5V
Current - Quiescent (Max): 2µA
Current - Output High, Low: 8mA, 8mA
Logic Level - Low: 0.1V ~ 36V
Logic Level - High: 2V ~ 4.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Supplier Device Package: 14-SOP
Package / Case: 14-SOIC (0.209", 5.30mm Width)

封裝: 14-SOIC (0.209", 5.30mm Width)

庫存18,306

RN2105MFV-L3F-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 2.2 kOhms
Resistor - Emitter Base (R2) (Ohms): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VESM

封裝: -

庫存2,529

RN2905FE-LF-CT

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封裝: -

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TC7SBL384CFU-LF

Toshiba Semiconductor and Storage

IC SWITCH SPST 18 OHM USV

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 18Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 6ns, 6ns
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 1µA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: 5-SSOP

封裝: -

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TCR2EN34-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=3.4V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.4V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.18V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封裝: -

庫存29,700

TPH2R003PL-LQ

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 100A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6410 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 830mW (Ta), 116W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Operating Temperature: 175°C
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP Advance (5x5)
Package / Case: 8-PowerVDFN

封裝: -

庫存33,024

TCR3DM33-RF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.23V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

封裝: -

庫存22,410

TRS12E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 12A TO-220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 12 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Capacitance @ Vr, F: 778pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C

封裝: -

庫存1,134