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Toshiba Semiconductor and Storage 產品

記錄 4,549
頁  147/163
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TK15A50D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 500V 15A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封裝: TO-220-3 Full Pack
庫存5,584
TK100L60W,VQ
Toshiba Semiconductor and Storage

MOSFET N CH 600V 100A TO3P(L)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 30V
  • Vgs (Max): ±30V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 797W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 50A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P(L)
  • Package / Case: TO-3PL
封裝: TO-3PL
庫存7,476
hot SSM6N58NU,LF
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 4A UDFN6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 84 mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 129pF @ 15V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
封裝: 6-WDFN Exposed Pad
庫存180,000
hot 2SA1586SU-Y,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A USM

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 100mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
封裝: SC-70, SOT-323
庫存3,600,000
2SA1162S-Y,LF
Toshiba Semiconductor and Storage

TRANS PNP 50V 0.15A S-MINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 150mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 80MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封裝: TO-236-3, SC-59, SOT-23-3
庫存7,536
RN1117(T5L,F,T)
Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W SSM

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 4.7k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SSM
封裝: SC-75, SOT-416
庫存6,976
RN2306,LF
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 0.1W USM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 200MHz
  • Power - Max: 100mW
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: USM
封裝: SC-70, SOT-323
庫存25,578
TCR5AM10,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 1V 500MA 5DFNB

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 1V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 55µA ~ 68µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
封裝: 4-XDFN Exposed Pad
庫存41,310
TAR5S33TE85LF
Toshiba Semiconductor and Storage

IC REG LINEAR 500MA 5SSOP

  • Output Configuration: -
  • Output Type: -
  • Number of Regulators: 1
  • Voltage - Input (Max): -
  • Voltage - Output (Min/Fixed): -
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): -
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: -
  • Control Features: -
  • Protection Features: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: 5-SSOP
封裝: SC-74A, SOT-753
庫存25,728
TCR5AM06,LF
Toshiba Semiconductor and Storage

IC REG LINEAR 0.6V 500MA 5DFNB

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 0.6V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.13V @ 300mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 55µA ~ 68µA
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 4-XDFN Exposed Pad
  • Supplier Device Package: 5-DFNB (1.2x1.2)
封裝: 4-XDFN Exposed Pad
庫存44,838
TB6559FG,8,EL
Toshiba Semiconductor and Storage

IC MOTOR DRIVER PAR 16HSOP

  • Motor Type - Stepper: -
  • Motor Type - AC, DC: Brushed DC
  • Function: Driver - Fully Integrated, Control and Power Stage
  • Output Configuration: Half Bridge (2)
  • Interface: Parallel
  • Technology: NMOS, PMOS
  • Step Resolution: -
  • Applications: General Purpose
  • Current - Output: 1A
  • Voltage - Supply: 10 V ~ 30 V
  • Voltage - Load: 10 V ~ 30 V
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
  • Supplier Device Package: 16-HSOP
封裝: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
庫存2,720
TC58NYG1S3HBAI6
Toshiba Semiconductor and Storage

IC EEPROM 2GBIT 25NS 67FBGA

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 67-VFBGA
  • Supplier Device Package: 67-VFBGA (6.5x8)
封裝: 67-VFBGA
庫存9,420
TC74VHCT138AFTEL
Toshiba Semiconductor and Storage

IC DECODER 3-TO-8 LINE 16-TSSOP

  • Type: Decoder/Demultiplexer
  • Circuit: 1 x 3:8
  • Independent Circuits: 1
  • Current - Output High, Low: 8mA, 8mA
  • Voltage Supply Source: Single Supply
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 16-TSSOP
封裝: 16-TSSOP (0.173", 4.40mm Width)
庫存2,288
74LCX373FT(AE)
Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20TSSOP

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 1.5ns
  • Current - Output High, Low: 24mA, 24mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
封裝: 20-TSSOP (0.173", 4.40mm Width)
庫存6,592
TC7SZ08F,LJ(CT
Toshiba Semiconductor and Storage

IC GATE AND 1CH 2-INP SMV

  • Logic Type: AND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Current - Quiescent (Max): 2µA
  • Current - Output High, Low: 32mA, 32mA
  • Logic Level - Low: -
  • Logic Level - High: -
  • Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: SMV
  • Package / Case: SC-74A, SOT-753
封裝: SC-74A, SOT-753
庫存21,702
TC75W58FU,LF
Toshiba Semiconductor and Storage

IC COMP GP CMOS DUAL SM8

  • Type: General Purpose
  • Number of Elements: 2
  • Output Type: Open Drain
  • Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
  • Voltage - Input Offset (Max): 7mV @ 5V
  • Current - Input Bias (Max): 1pA @ 5V
  • Current - Output (Typ): 25mA
  • Current - Quiescent (Max): 22µA
  • CMRR, PSRR (Typ): -
  • Propagation Delay (Max): 800ns
  • Hysteresis: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SM8
封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
庫存7,888
hot TC7SB66CFU,LF
Toshiba Semiconductor and Storage

IC BUS SWITCH LOCAP USV

  • Switch Circuit: SPST - NC
  • Multiplexer/Demultiplexer Circuit: 1:1
  • Number of Circuits: 1
  • On-State Resistance (Max): 7 Ohm
  • Channel-to-Channel Matching (ΔRon): -
  • Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V
  • Voltage - Supply, Dual (V±): -
  • Switch Time (Ton, Toff) (Max): 4ns, 4.5ns
  • -3db Bandwidth: -
  • Charge Injection: -
  • Channel Capacitance (CS(off), CD(off)): 5pF
  • Current - Leakage (IS(off)) (Max): 1µA
  • Crosstalk: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package: USV
封裝: 5-TSSOP, SC-70-5, SOT-353
庫存396,000
TLP4222G-2(F)
Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 3MA 8-DIP

  • Circuit: DPST (2 Form B)
  • Output Type: AC, DC
  • On-State Resistance (Max): 50 Ohm
  • Load Current: 100mA
  • Voltage - Input: 1.15VDC
  • Voltage - Load: 0 ~ 350 V
  • Mounting Type: Through Hole
  • Termination Style: PC Pin
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
  • Relay Type: Relay
封裝: 8-DIP (0.300", 7.62mm)
庫存3,294
TLP3406S(TP,E
Toshiba Semiconductor and Storage

PHOTORELAY 1.5A 30V S-VSON4

  • Circuit: SPST-NO (1 Form A)
  • Output Type: AC, DC
  • On-State Resistance (Max): 200 mOhm
  • Load Current: 1.5A
  • Voltage - Input: 1.21VDC
  • Voltage - Load: 0 ~ 30 V
  • Mounting Type: Surface Mount
  • Termination Style: SMD (SMT) Tab
  • Package / Case: 4-SMD (0.079", 2.00mm)
  • Supplier Device Package: S-VSON4
  • Relay Type: Relay
封裝: 4-SMD (0.079", 2.00mm)
庫存7,218
TLP281-4(TP,J,F)
Toshiba Semiconductor and Storage

OPTOISO 2.5KV 4CH TRANS 16-SOP

  • Number of Channels: 4
  • Voltage - Isolation: 2500Vrms
  • Current Transfer Ratio (Min): 50% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.15V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 400mV
  • Operating Temperature: -55°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.173", 4.40mm Width)
  • Supplier Device Package: 16-SOP
封裝: 16-SOIC (0.173", 4.40mm Width)
庫存3,978
TLP292-4(V4-GB,E
Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

  • Number of Channels: 4
  • Voltage - Isolation: 3750Vrms
  • Current Transfer Ratio (Min): 100% @ 5mA
  • Current Transfer Ratio (Max): 600% @ 5mA
  • Turn On / Turn Off Time (Typ): 3µs, 3µs
  • Rise / Fall Time (Typ): 2µs, 3µs
  • Input Type: AC, DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.25V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 300mV
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.179", 4.55mm Width)
  • Supplier Device Package: 16-SO
封裝: 16-SOIC (0.179", 4.55mm Width)
庫存5,220
TK4A80E-S4X
Toshiba Semiconductor and Storage

PB-FPOWERMOSFETTRANSISTORTO-220S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封裝: -
庫存120
TC74LCX373FT-EL
Toshiba Semiconductor and Storage

IC D-TYPE TRANSP SGL 8:8 20TSSOP

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 2V ~ 3.6V
  • Independent Circuits: 1
  • Delay Time - Propagation: 1.5ns
  • Current - Output High, Low: 24mA, 24mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 20-TSSOP
封裝: -
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RN2115MFV-L3F
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

  • Transistor Type: PNP - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1) (Ohms): 2.2 kOhms
  • Resistor - Emitter Base (R2) (Ohms): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: -
  • Power - Max: 150 mW
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: VESM
封裝: -
庫存47,964
TCB010FNG
Toshiba Semiconductor and Storage

IC REG AUTO APPL 5OUT 15HZIP

  • Applications: Converter, Car Audio System
  • Voltage - Input: 18V
  • Number of Outputs: 7
  • Voltage - Output: 3.3V, 3.3V, 5V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
  • Supplier Device Package: 36-HSSOP
封裝: -
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TCR3DF36-LM-CT
Toshiba Semiconductor and Storage

PB-F SMV POINT DDRULATOR (SINGLE

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 5.5V
  • Voltage - Output (Min/Fixed): 3.6V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.22V @ 300mA
  • Current - Output: 300mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): -
  • PSRR: 70dB (1kHz)
  • Control Features: Enable
  • Protection Features: Over Current, Over Temperature
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-74A, SOT-753
  • Supplier Device Package: SMV
封裝: -
庫存9,000
TK62N60W5-S1VF
Toshiba Semiconductor and Storage

PB-F POWER MOSFET TRANSISTOR TO-

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
封裝: -
庫存111
HN2D01FU-TE85L-F
Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 80MA US6

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io) (per Diode): 80mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 80 V
  • Operating Temperature - Junction: 125°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: US6
封裝: -
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