頁 137 - Toshiba Semiconductor and Storage 產品

零件編號	製造商	描述	封裝	庫存
TPC8A06-H(TE12LQM)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 12A 8SOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V Vgs (Max): ±20V FET Feature: Schottky Diode (Body) Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 6A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	封裝: 8-SOIC (0.173", 4.40mm Width)	庫存3,200
TK40E10K3,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 40A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	封裝: TO-220-3	庫存5,248
TK34A10N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 34A TO-220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack, Isolated Tab	封裝: TO-220-3 Full Pack, Isolated Tab	庫存5,472
T2N7002AK,LM	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 0.2A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 320mW (Ta) Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	封裝: TO-236-3, SC-59, SOT-23-3	庫存54,984
TK6A65D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 5A TO-220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 1.11 Ohm @ 3A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存20,640
TK13A60D(STA4,Q,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 13A TO220SIS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	封裝: TO-220-3 Full Pack	庫存24,654
SSM6N36FE,LM	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 0.5A ES6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)	封裝: SOT-563, SOT-666	庫存4,064
2SC3668-Y,T2WNLF(J	Toshiba Semiconductor and Storage	TRANS NPN 2A 50V SC71 Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 1W Frequency - Transition: 100MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-71 Supplier Device Package: MSTM	封裝: SC-71	庫存3,232
RN2903,LF	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: 6-TSSOP, SC-88, SOT-363	庫存52,122
CTS521,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 200MA CST2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 30µA @ 30V Capacitance @ Vr, F: 25pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2 Operating Temperature - Junction: 125°C (Max)	封裝: SOD-882	庫存105,672
TA78L005AP,T6WNF(J	Toshiba Semiconductor and Storage	IC REG LINEAR 150MA LSTM Output Configuration: - Output Type: - Number of Regulators: 1 Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: -30°C ~ 85°C Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	封裝: TO-226-3, TO-92-3 Long Body	庫存7,712
TCR2EF28,LM(CT	Toshiba Semiconductor and Storage	IC REG LINEAR 2.8V 200MA SMV Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 60µA PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	封裝: SC-74A, SOT-753	庫存7,504
TCR2LN28,LF	Toshiba Semiconductor and Storage	IC REG LINEAR 2.8V 200MA 4-SDFN Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: 200mA Current - Quiescent (Iq): - Current - Supply (Max): 2µA PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封裝: 4-XFDFN Exposed Pad	庫存96,486
TC74LVX573FTEL	Toshiba Semiconductor and Storage	IC LATCH OCTAL D-TYPE 20-TSSOP Logic Type: D-Type Transparent Latch Circuit: 8:8 Output Type: Tri-State Voltage - Supply: 2 V ~ 3.6 V Independent Circuits: 1 Delay Time - Propagation: 5.9ns Current - Output High, Low: 4mA, 4mA Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封裝: 20-TSSOP (0.173", 4.40mm Width)	庫存7,456
TC75S59FE(TE85L,F)	Toshiba Semiconductor and Storage	IC COMP GP CMOS ESV Type: General Purpose Number of Elements: 1 Output Type: Open Drain Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 1pA Current - Output (Typ): 25mA Current - Quiescent (Max): 220µA CMRR, PSRR (Typ): - Propagation Delay (Max): 200ns Hysteresis: - Operating Temperature: -40°C ~ 85°C Package / Case: SOT-553 Mounting Type: Surface Mount Supplier Device Package: ESV	封裝: SOT-553	庫存6,928
TA75W558FU,LF	Toshiba Semiconductor and Storage	IC OPAMP GP 3MHZ 8SSOP Amplifier Type: General Purpose Number of Circuits: 2 Output Type: - Slew Rate: 1 V/µs Gain Bandwidth Product: 3MHz -3db Bandwidth: - Current - Input Bias: 60nA Voltage - Input Offset: 500µV Current - Supply: 4mA Current - Output / Channel: 40mA Voltage - Supply, Single/Dual (±): ±4 V ~ 18 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8	封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)	庫存48,258
TL1WK-DW1,LCS	Toshiba Semiconductor and Storage	LED LETERAS COOL WHT 6500K 2SMD Color: White, Cool CCT (K): 6500K Flux @ 85°C, Current - Test: - Flux @ 25°C, Current - Test: 22 lm (Typ) Current - Test: 60mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 130 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Viewing Angle: 165° Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm)	封裝: 2-SMD, No Lead	庫存6,246
DF10G7M1N,LF	Toshiba Semiconductor and Storage	TVS DIODE 5VWM 12VC 10DFN Type: Steering (Rail to Rail) Unidirectional Channels: 4 Bidirectional Channels: - Voltage - Reverse Standoff (Typ): 5V (Max) Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V (Typ) Current - Peak Pulse (10/1000µs): 1A (8/20µs) Power - Peak Pulse: - Power Line Protection: Yes Applications: HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Operating Temperature: - Mounting Type: Surface Mount Package / Case: 10-UFDFN Supplier Device Package: 10-DFN (2.5x1)	封裝: 10-UFDFN	庫存21,888
TLP558(F)	Toshiba Semiconductor and Storage	OPTOISO 2.5KV TRI-STATE 8DIP Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 1kV/µs Input Type: DC Output Type: Tri-State Current - Output / Channel: 40mA Data Rate: 5Mbps Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Rise / Fall Time (Typ): 35ns, 20ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 4.5 V ~ 20 V Operating Temperature: -40°C ~ 85°C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封裝: 8-DIP (0.300", 7.62mm)	庫存6,732
TLP155E(E)	Toshiba Semiconductor and Storage	OPTOISO 3.75KV GATE DRIVER 6SO-5 Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 170ns, 170ns Pulse Width Distortion (Max): - Rise / Fall Time (Typ): 35ns, 15ns Current - Output High, Low: 400mA, 400mA Current - Peak Output: 600mA Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads Supplier Device Package: 6-SO, 5 Lead Approvals: CSA, cUL, UL	封裝: 6-SOIC (0.179", 4.55mm Width) 5 Leads	庫存8,910
74VHC153FT	Toshiba Semiconductor and Storage	X31 PB-F VHS TSSOP 16 CMOS LOGIC Type: Multiplexer Circuit: 2 x 4:1 Independent Circuits: 2 Current - Output High, Low: 8mA, 8mA Voltage Supply Source: Single Supply Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 16-TSSOPB	封裝: 16-TSSOP (0.173", 4.40mm Width)	庫存4,944
TCR2LF08,LM(CT	Toshiba Semiconductor and Storage	200MA LDO VOUT0.8V DROPOUT220MV Output Configuration: - Output Type: - Number of Regulators: - Voltage - Input (Max): - Voltage - Output (Min/Fixed): - Voltage - Output (Max): - Voltage Dropout (Max): - Current - Output: - Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: - Control Features: - Protection Features: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,792
TCR4DG33,LF	Toshiba Semiconductor and Storage	X34 LDO REGULATORS VOUT: 3.3V IO Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3.3V Voltage - Output (Max): - Voltage Dropout (Max): 0.263V @ 420mA Current - Output: 420mA Current - Quiescent (Iq): - Current - Supply (Max): - PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Supplier Device Package: 4-WCSPE (0.65x0.65)	封裝: 4-XFBGA, CSPBGA	庫存45,516
TCR3UM18A-LF-SE	Toshiba Semiconductor and Storage	LDO REG IOUT: 300MA VIN: 6V VOUT Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 0.457V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 680 nA Current - Supply (Max): - PSRR: - Control Features: Current Limit, Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: 4-DFN (1x1)	封裝: -	庫存16,707
TCR2EN29-LF-SE	Toshiba Semiconductor and Storage	LDO REG VOUT=2.9V IOUT=200MA Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.9V Voltage - Output (Max): - Voltage Dropout (Max): 0.21V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	封裝: -	庫存29,970
TCR2DG26-LF	Toshiba Semiconductor and Storage	LOW DROPOUT (LDO) IOUT: 200MA PD Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.6V Voltage - Output (Max): - Voltage Dropout (Max): 0.13V @ 100mA Current - Output: 200mA Current - Quiescent (Iq): 70 µA Current - Supply (Max): - PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WCSP (0.79x0.79)	封裝: -	Request a Quote
RN4908-LF-CT	Toshiba Semiconductor and Storage	PNP + NPN BRT Q1BSR10KOHM Q1BER4 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封裝: -	庫存9,000
TPCC8105-L1Q-CM	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 23A 8TSON FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Vgs (Max): +20V, -25V FET Feature: - Power Dissipation (Max): 700mW (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V Operating Temperature: 150°C Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-VDFN Exposed Pad	封裝: -	Request a Quote

TPC8A06-H(TE12LQM)

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 12A 8SOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 10V
Vgs (Max): ±20V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 6A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP (5.5x6.0)
Package / Case: 8-SOIC (0.173", 4.40mm Width)

封裝: 8-SOIC (0.173", 4.40mm Width)

庫存3,200

TK40E10K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

封裝: TO-220-3

庫存5,248

TK34A10N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 34A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

封裝: TO-220-3 Full Pack, Isolated Tab

庫存5,472

T2N7002AK,LM

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.2A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 320mW (Ta)
Rds On (Max) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

封裝: TO-236-3, SC-59, SOT-23-3

庫存54,984

TK6A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 5A TO-220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 1.11 Ohm @ 3A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存20,640

TK13A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 13A TO220SIS

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 430 mOhm @ 6.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack

封裝: TO-220-3 Full Pack

庫存24,654

SSM6N36FE,LM

Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Rds On (Max) @ Id, Vgs: 630 mOhm @ 200mA, 5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6 (1.6x1.6)

封裝: SOT-563, SOT-666

庫存4,064

2SC3668-Y,T2WNLF(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V SC71

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Power - Max: 1W
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-71
Supplier Device Package: MSTM

封裝: SC-71

庫存3,232

RN2903,LF

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: 6-TSSOP, SC-88, SOT-363

庫存52,122

CTS521,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 200MA CST2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 500mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 30µA @ 30V
Capacitance @ Vr, F: 25pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-882
Supplier Device Package: CST2
Operating Temperature - Junction: 125°C (Max)

封裝: SOD-882

庫存105,672

TA78L005AP,T6WNF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

Output Configuration: -
Output Type: -
Number of Regulators: 1
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -30°C ~ 85°C
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: LSTM

封裝: TO-226-3, TO-92-3 Long Body

庫存7,712

TCR2EF28,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 200MA SMV

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 60µA
PSRR: 73dB (1kHz)
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMV

封裝: SC-74A, SOT-753

庫存7,504

TCR2LN28,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 2.8V 200MA 4-SDFN

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.8V
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: 200mA
Current - Quiescent (Iq): -
Current - Supply (Max): 2µA
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封裝: 4-XFDFN Exposed Pad

庫存96,486

TC74LVX573FTEL

Toshiba Semiconductor and Storage

IC LATCH OCTAL D-TYPE 20-TSSOP

Logic Type: D-Type Transparent Latch
Circuit: 8:8
Output Type: Tri-State
Voltage - Supply: 2 V ~ 3.6 V
Independent Circuits: 1
Delay Time - Propagation: 5.9ns
Current - Output High, Low: 4mA, 4mA
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封裝: 20-TSSOP (0.173", 4.40mm Width)

庫存7,456

TC75S59FE(TE85L,F)

Toshiba Semiconductor and Storage

IC COMP GP CMOS ESV

Type: General Purpose
Number of Elements: 1
Output Type: Open Drain
Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 1pA
Current - Output (Typ): 25mA
Current - Quiescent (Max): 220µA
CMRR, PSRR (Typ): -
Propagation Delay (Max): 200ns
Hysteresis: -
Operating Temperature: -40°C ~ 85°C
Package / Case: SOT-553
Mounting Type: Surface Mount
Supplier Device Package: ESV

封裝: SOT-553

庫存6,928

TA75W558FU,LF

Toshiba Semiconductor and Storage

IC OPAMP GP 3MHZ 8SSOP

Amplifier Type: General Purpose
Number of Circuits: 2
Output Type: -
Slew Rate: 1 V/µs
Gain Bandwidth Product: 3MHz
-3db Bandwidth: -
Current - Input Bias: 60nA
Voltage - Input Offset: 500µV
Current - Supply: 4mA
Current - Output / Channel: 40mA
Voltage - Supply, Single/Dual (±): ±4 V ~ 18 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Supplier Device Package: SM8

封裝: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)

庫存48,258

TL1WK-DW1,LCS

Toshiba Semiconductor and Storage

LED LETERAS COOL WHT 6500K 2SMD

Color: White, Cool
CCT (K): 6500K
Flux @ 85°C, Current - Test: -
Flux @ 25°C, Current - Test: 22 lm (Typ)
Current - Test: 60mA
Voltage - Forward (Vf) (Typ): 2.8V
Lumens/Watt @ Current - Test: 130 lm/W
CRI (Color Rendering Index): 80
Current - Max: 180mA
Viewing Angle: 165°
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: SMD
Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm)
Height - Seated (Max): 0.015" (0.39mm)

封裝: 2-SMD, No Lead

庫存6,246

DF10G7M1N,LF

Toshiba Semiconductor and Storage

TVS DIODE 5VWM 12VC 10DFN

Type: Steering (Rail to Rail)
Unidirectional Channels: 4
Bidirectional Channels: -
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Power - Peak Pulse: -
Power Line Protection: Yes
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Supplier Device Package: 10-DFN (2.5x1)

封裝: 10-UFDFN

庫存21,888

TLP558(F)

Toshiba Semiconductor and Storage

OPTOISO 2.5KV TRI-STATE 8DIP

Number of Channels: 1
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 2500Vrms
Common Mode Transient Immunity (Min): 1kV/µs
Input Type: DC
Output Type: Tri-State
Current - Output / Channel: 40mA
Data Rate: 5Mbps
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Rise / Fall Time (Typ): 35ns, 20ns
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 10mA
Voltage - Supply: 4.5 V ~ 20 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封裝: 8-DIP (0.300", 7.62mm)

庫存6,732

TLP155E(E)

Toshiba Semiconductor and Storage

OPTOISO 3.75KV GATE DRIVER 6SO-5

Technology: Optical Coupling
Number of Channels: 1
Voltage - Isolation: 3750Vrms
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 170ns, 170ns
Pulse Width Distortion (Max): -
Rise / Fall Time (Typ): 35ns, 15ns
Current - Output High, Low: 400mA, 400mA
Current - Peak Output: 600mA
Voltage - Forward (Vf) (Typ): 1.55V
Current - DC Forward (If) (Max): 20mA
Voltage - Supply: 10 V ~ 30 V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
Supplier Device Package: 6-SO, 5 Lead
Approvals: CSA, cUL, UL

封裝: 6-SOIC (0.179", 4.55mm Width) 5 Leads

庫存8,910

74VHC153FT

Toshiba Semiconductor and Storage

X31 PB-F VHS TSSOP 16 CMOS LOGIC

Type: Multiplexer
Circuit: 2 x 4:1
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Voltage - Supply: 2 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 16-TSSOPB

封裝: 16-TSSOP (0.173", 4.40mm Width)

庫存4,944

TCR2LF08,LM(CT

Toshiba Semiconductor and Storage

200MA LDO VOUT0.8V DROPOUT220MV

Output Configuration: -
Output Type: -
Number of Regulators: -
Voltage - Input (Max): -
Voltage - Output (Min/Fixed): -
Voltage - Output (Max): -
Voltage Dropout (Max): -
Current - Output: -
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: -
Control Features: -
Protection Features: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,792

TCR4DG33,LF

Toshiba Semiconductor and Storage

X34 LDO REGULATORS VOUT: 3.3V IO

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3.3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.263V @ 420mA
Current - Output: 420mA
Current - Quiescent (Iq): -
Current - Supply (Max): -
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Supplier Device Package: 4-WCSPE (0.65x0.65)

封裝: 4-XFBGA, CSPBGA

庫存45,516

TCR3UM18A-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.457V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): 680 nA
Current - Supply (Max): -
PSRR: -
Control Features: Current Limit, Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: 4-DFN (1x1)

封裝: -

庫存16,707

TCR2EN29-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=2.9V IOUT=200MA

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.9V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.21V @ 150mA
Current - Output: 200mA
Current - Quiescent (Iq): 60 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-XFDFN Exposed Pad
Supplier Device Package: 4-SDFN (0.8x0.8)

封裝: -

庫存29,970

TCR2DG26-LF

Toshiba Semiconductor and Storage

LOW DROPOUT (LDO) IOUT: 200MA PD

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 2.6V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.13V @ 100mA
Current - Output: 200mA
Current - Quiescent (Iq): 70 µA
Current - Supply (Max): -
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, WLCSP
Supplier Device Package: 4-WCSP (0.79x0.79)

封裝: -

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RN4908-LF-CT

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR10KOHM Q1BER4

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封裝: -

庫存9,000

TPCC8105-L1Q-CM

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 23A 8TSON

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Vgs (Max): +20V, -25V
FET Feature: -
Power Dissipation (Max): 700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 11.5A, 10V
Operating Temperature: 150°C
Mounting Type: Surface Mount
Supplier Device Package: 8-TSON Advance (3.3x3.3)
Package / Case: 8-VDFN Exposed Pad

封裝: -

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