頁 384 - Micron Technology Inc. 產品 - 記憶體

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT52L256M32D1PF-093 WT ES:B TR	Micron Technology Inc.	IC SDRAM 8GBIT 1.067GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,920	DRAM	SDRAM - Mobile LPDDR3	8Gb (256M x 32)	-	1067MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M32D2GZ-062 WT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,040	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M32D1GZ-062 WT:B TR	Micron Technology Inc.	IC SDRAM 8GBIT 1.6GHZ 200FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,376	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M32D1GZ-062 AIT:B TR	Micron Technology Inc.	IC SDRAM 8GBIT 1.6GHZ 200FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,176	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT52L512M64D4GN-107 WT ES:B TR	Micron Technology Inc.	IC SDRAM 32GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,384	DRAM	SDRAM - Mobile LPDDR3	32Gb (512M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4NJ-062 WT ES:B TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,312	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B384M64D4NK-053 WT ES:A TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.8GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,080	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B384M64D4NH-062 WT ES:A TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,176	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B384M64D4EZ-062 WT ES:A TR	Micron Technology Inc.	IC SDRAM 24GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,640	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B2DANH-DC	Micron Technology Inc.	LPDDR4 16G 256MX64 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,432	-	-	-	-	-	-	-	-	-	-	-	-
MT52L256M64D2PD-107 WT ES:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,896	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT52L256M64D2GN-107 WT ES:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,080	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT25QL01GBBA8E12E01-2SIT TR	Micron Technology Inc.	IC FLASH 1GBIT 133MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封裝: 24-TBGA	庫存5,472	FLASH	FLASH - NOR	1Gb (128M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
PF58F0095HVT0B0A	Micron Technology Inc.	NOR FLASH 512MX16 PLASTIC PBF LF Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,440	-	-	-	-	-	-	-	-	-	-	-	-
MT53B512M64D4EZ-062 WT:C TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,312	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4EZ-062 WT:B TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,592	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M64D4EZ-062 WT ES:B TR	Micron Technology Inc.	IC SDRAM 32GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,448	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B512M32D2GZ-062 AIT:B TR	Micron Technology Inc.	IC SDRAM 16GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,072	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1600MHz	-	-	1.1V	-40°C ~ 95°C (TC)	-	-	-
MT53B4DBEZ-DC TR	Micron Technology Inc.	LPDDR4 32G 512MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,336	-	-	-	-	-	-	-	-	-	-	-	-
MT53B4DAEZ-DC TR	Micron Technology Inc.	LPDDR4 24G 384MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,832	-	-	-	-	-	-	-	-	-	-	-	-
MT53B192M32D1SG-062 WT ES:A TR	Micron Technology Inc.	IC SDRAM 6GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 6Gb (192M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,192	DRAM	SDRAM - Mobile LPDDR4	6Gb (192M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT42L64M64D2LL-18 WT:C TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (64M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,016	DRAM	SDRAM - Mobile LPDDR2	4Gb (64M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	-	-	-
MT42L64M64D2LL-18 IT:C TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (64M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,688	DRAM	SDRAM - Mobile LPDDR2	4Gb (64M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	-	-	-
MT42L64M32D1TK-18 IT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,320	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	-	-	-
MT42L64M32D1TK-18 AAT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,056	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-40°C ~ 105°C (TC)	-	-	-
MT42L64M32D1LF-18 IT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-TFBGA Supplier Device Package: 168-FBGA (12x12)	封裝: 168-TFBGA	庫存4,240	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	168-TFBGA	168-FBGA (12x12)
MT42L32M16D1FE-25 IT:A TR	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 121-WFBGA Supplier Device Package: 121-FBGA (6.5x8)	封裝: 121-WFBGA	庫存2,304	DRAM	SDRAM - Mobile LPDDR2	512Mb (32M x 16)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	121-WFBGA	121-FBGA (6.5x8)
MT42L32M16D1AB-25 IT:A TR	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 121-WFBGA Supplier Device Package: 121-FBGA (6.5x8)	封裝: 121-WFBGA	庫存5,936	DRAM	SDRAM - Mobile LPDDR2	512Mb (32M x 16)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	121-WFBGA	121-FBGA (6.5x8)

MT52L256M32D1PF-093 WT ES:B TR

Micron Technology Inc.

IC SDRAM 8GBIT 1.067GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,920

DRAM

SDRAM - Mobile LPDDR3

8Gb (256M x 32)

-

1067MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT53B512M32D2GZ-062 WT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,040

DRAM

SDRAM - Mobile LPDDR4

16Gb (512M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M32D1GZ-062 WT:B TR

Micron Technology Inc.

IC SDRAM 8GBIT 1.6GHZ 200FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,376

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M32D1GZ-062 AIT:B TR

Micron Technology Inc.

IC SDRAM 8GBIT 1.6GHZ 200FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,176

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-40°C ~ 95°C (TC)

-

MT52L512M64D4GN-107 WT ES:B TR

Micron Technology Inc.

IC SDRAM 32GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,384

DRAM

SDRAM - Mobile LPDDR3

32Gb (512M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT53B512M64D4NJ-062 WT ES:B TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,312

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B384M64D4NK-053 WT ES:A TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.8GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,080

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B384M64D4NH-062 WT ES:A TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,176

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B384M64D4EZ-062 WT ES:A TR

Micron Technology Inc.

IC SDRAM 24GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,640

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B2DANH-DC

Micron Technology Inc.

LPDDR4 16G 256MX64 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,432

-

MT52L256M64D2PD-107 WT ES:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,896

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT52L256M64D2GN-107 WT ES:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,080

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT25QL01GBBA8E12E01-2SIT TR

Micron Technology Inc.

IC FLASH 1GBIT 133MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封裝: 24-TBGA

庫存5,472

FLASH

FLASH - NOR

1Gb (128M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

PF58F0095HVT0B0A

Micron Technology Inc.

NOR FLASH 512MX16 PLASTIC PBF LF

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,440

-

MT53B512M64D4EZ-062 WT:C TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,312

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B512M64D4EZ-062 WT:B TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,592

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B512M64D4EZ-062 WT ES:B TR

Micron Technology Inc.

IC SDRAM 32GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,448

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B512M32D2GZ-062 AIT:B TR

Micron Technology Inc.

IC SDRAM 16GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (512M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,072

DRAM

SDRAM - Mobile LPDDR4

16Gb (512M x 32)

-

1600MHz

-

1.1V

-40°C ~ 95°C (TC)

-

MT53B4DBEZ-DC TR

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,336

-

MT53B4DAEZ-DC TR

Micron Technology Inc.

LPDDR4 24G 384MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,832

-

MT53B192M32D1SG-062 WT ES:A TR

Micron Technology Inc.

IC SDRAM 6GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 6Gb (192M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,192

DRAM

SDRAM - Mobile LPDDR4

6Gb (192M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT42L64M64D2LL-18 WT:C TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (64M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,016

DRAM

SDRAM - Mobile LPDDR2

4Gb (64M x 64)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

-

MT42L64M64D2LL-18 IT:C TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (64M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,688

DRAM

SDRAM - Mobile LPDDR2

4Gb (64M x 64)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

-

MT42L64M32D1TK-18 IT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,320

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

-

MT42L64M32D1TK-18 AAT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,056

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-40°C ~ 105°C (TC)

-

MT42L64M32D1LF-18 IT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-TFBGA
Supplier Device Package: 168-FBGA (12x12)

封裝: 168-TFBGA

庫存4,240

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

168-TFBGA

168-FBGA (12x12)

MT42L32M16D1FE-25 IT:A TR

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 121-WFBGA
Supplier Device Package: 121-FBGA (6.5x8)

封裝: 121-WFBGA

庫存2,304

DRAM

SDRAM - Mobile LPDDR2

512Mb (32M x 16)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

121-WFBGA

121-FBGA (6.5x8)

MT42L32M16D1AB-25 IT:A TR

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 121-WFBGA
Supplier Device Package: 121-FBGA (6.5x8)

封裝: 121-WFBGA

庫存5,936

DRAM

SDRAM - Mobile LPDDR2

512Mb (32M x 16)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

121-WFBGA

121-FBGA (6.5x8)