頁 383 - Micron Technology Inc. 產品 - 記憶體

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT42L256M16D1GU-18 WT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-WFBGA Supplier Device Package: 134-FBGA (10x11.5)	封裝: 134-WFBGA	庫存4,768	DRAM	SDRAM - Mobile LPDDR2	4Gb (256M x 16)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	134-WFBGA	134-FBGA (10x11.5)
MT42L128M64D2MC-18 IT:A TR	Micron Technology Inc.	IC SDRAM 8GBIT 533MHZ 240FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 240-WFBGA Supplier Device Package: 240-FBGA (14x14)	封裝: 240-WFBGA	庫存2,544	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	240-WFBGA	240-FBGA (14x14)
MT42L128M32D1TK-25 IT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 400MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 138-UFBGA, WLBGA Supplier Device Package: 134-FBGA (10x11.5)	封裝: 138-UFBGA, WLBGA	庫存6,608	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	138-UFBGA, WLBGA	134-FBGA (10x11.5)
MT42L128M32D1TK-25 AIT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 400MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 138-UFBGA, WLBGA Supplier Device Package: 134-FBGA (10x11.5)	封裝: 138-UFBGA, WLBGA	庫存3,952	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-25°C ~ 85°C (TC)	Surface Mount	138-UFBGA, WLBGA	134-FBGA (10x11.5)
MT42L128M32D1TK-25 AAT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 400MHZ 134FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 138-UFBGA, WLBGA Supplier Device Package: 134-FBGA (10x11.5)	封裝: 138-UFBGA, WLBGA	庫存6,416	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-40°C ~ 105°C (TC)	Surface Mount	138-UFBGA, WLBGA	134-FBGA (10x11.5)
MT42L128M32D1LF-18 WT:A TR	Micron Technology Inc.	IC SDRAM 4GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-FBGA (12x12)	封裝: 168-WFBGA	庫存4,304	DRAM	SDRAM - Mobile LPDDR2	4Gb (128M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-FBGA (12x12)
MT41K2G4SN-107:A TR	Micron Technology Inc.	IC SDRAM 8GBIT 933MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (2G x 4) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9x13.2)	封裝: 78-TFBGA	庫存6,272	DRAM	SDRAM - DDR3L	8Gb (2G x 4)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	78-TFBGA	78-FBGA (9x13.2)
MT38W201DAA033JZZI.X68 TR	Micron Technology Inc.	MCP 5MX16 PLASTIC 2.0V IND TEMP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,416	-	-	-	-	-	-	-	-	-	-	-	-
MT29F64G08CBEDBJ4-12IT:D TR	Micron Technology Inc.	IC FLASH 64GBIT 83MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存6,608	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F64G08CBEDBJ4-12:D TR	Micron Technology Inc.	IC FLASH 64GBIT 83MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,472	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08ABCBBH6-6:B TR	Micron Technology Inc.	IC FLASH 64GBIT 167MHZ 152VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,016	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08EMCBBJ5-10:B TR	Micron Technology Inc.	IC FLASH 512GBIT 100MHZ 132TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,040	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08CUEDBJ6-12IT:D TR	Micron Technology Inc.	IC FLASH 512GBIT 83MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,392	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F512G08CUEDBJ6-12:D TR	Micron Technology Inc.	IC FLASH 512GBIT 83MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,320	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08CUCDBJ6-6ITR:D TR	Micron Technology Inc.	IC FLASH 512GBIT 167MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,800	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	166MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F512G08CMEABH7-12IT:A TR	Micron Technology Inc.	IC FLASH 512GBIT 83MHZ 152TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,816	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F512G08CKEABH7-12IT:A TR	Micron Technology Inc.	IC FLASH 512GBIT 83MHZ 152TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,056	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F512G08CKCBBH7-6R:B TR	Micron Technology Inc.	IC FLASH 512GBIT 167MHZ 152TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,568	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	166MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08AUEBBK8-12:B TR	Micron Technology Inc.	IC FLASH 512GBIT 83MHZ TLGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,200	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08AUCBBK8-6:B TR	Micron Technology Inc.	IC FLASH 512GBIT 167MHZ TLGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,088	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	166MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08AUCBBH8-6:B TR	Micron Technology Inc.	IC FLASH 512GBIT 167MHZ 132LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,752	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	166MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F32G08CBADBWP-12:D TR	Micron Technology Inc.	IC FLASH 32GBIT 83MHZ 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gb (4G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,736	FLASH	FLASH - NAND	32Gb (4G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CWCCBJ7-12:C TR	Micron Technology Inc.	IC FLASH 2TBIT 83MHZ 152LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存3,696	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CWCBBJ7-6R:B TR	Micron Technology Inc.	IC FLASH 2TBIT 167MHZ 152LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,416	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CVCBBG6-6R:B TR	Micron Technology Inc.	IC FLASH 2TBIT 167MHZ 272LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,480	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08CTCBBJ7-6R:B TR	Micron Technology Inc.	IC FLASH 2TBIT 167MHZ 152LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,152	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F256G08EFEBBWP:B TR	Micron Technology Inc.	IC FLASH 256GBIT 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,616	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F256G08EECBBJ4-6:B TR	Micron Technology Inc.	IC FLASH 256GBIT 167MHZ 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存2,560	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-

MT42L256M16D1GU-18 WT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-WFBGA
Supplier Device Package: 134-FBGA (10x11.5)

封裝: 134-WFBGA

庫存4,768

DRAM

SDRAM - Mobile LPDDR2

4Gb (256M x 16)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

134-WFBGA

134-FBGA (10x11.5)

MT42L128M64D2MC-18 IT:A TR

Micron Technology Inc.

IC SDRAM 8GBIT 533MHZ 240FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 240-WFBGA
Supplier Device Package: 240-FBGA (14x14)

封裝: 240-WFBGA

庫存2,544

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

240-WFBGA

240-FBGA (14x14)

MT42L128M32D1TK-25 IT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 138-UFBGA, WLBGA
Supplier Device Package: 134-FBGA (10x11.5)

封裝: 138-UFBGA, WLBGA

庫存6,608

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

138-UFBGA, WLBGA

134-FBGA (10x11.5)

MT42L128M32D1TK-25 AIT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 138-UFBGA, WLBGA
Supplier Device Package: 134-FBGA (10x11.5)

封裝: 138-UFBGA, WLBGA

庫存3,952

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-25°C ~ 85°C (TC)

Surface Mount

138-UFBGA, WLBGA

134-FBGA (10x11.5)

MT42L128M32D1TK-25 AAT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 134FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 138-UFBGA, WLBGA
Supplier Device Package: 134-FBGA (10x11.5)

封裝: 138-UFBGA, WLBGA

庫存6,416

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-40°C ~ 105°C (TC)

Surface Mount

138-UFBGA, WLBGA

134-FBGA (10x11.5)

MT42L128M32D1LF-18 WT:A TR

Micron Technology Inc.

IC SDRAM 4GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-FBGA (12x12)

封裝: 168-WFBGA

庫存4,304

DRAM

SDRAM - Mobile LPDDR2

4Gb (128M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-FBGA (12x12)

MT41K2G4SN-107:A TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (2G x 4)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9x13.2)

封裝: 78-TFBGA

庫存6,272

DRAM

SDRAM - DDR3L

8Gb (2G x 4)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

78-TFBGA

78-FBGA (9x13.2)

MT38W201DAA033JZZI.X68 TR

Micron Technology Inc.

MCP 5MX16 PLASTIC 2.0V IND TEMP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,416

-

MT29F64G08CBEDBJ4-12IT:D TR

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存6,608

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F64G08CBEDBJ4-12:D TR

Micron Technology Inc.

IC FLASH 64GBIT 83MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,472

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F64G08ABCBBH6-6:B TR

Micron Technology Inc.

IC FLASH 64GBIT 167MHZ 152VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,016

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08EMCBBJ5-10:B TR

Micron Technology Inc.

IC FLASH 512GBIT 100MHZ 132TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,040

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08CUEDBJ6-12IT:D TR

Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,392

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F512G08CUEDBJ6-12:D TR

Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,320

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08CUCDBJ6-6ITR:D TR

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,800

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

166MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F512G08CMEABH7-12IT:A TR

Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 152TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,816

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F512G08CKEABH7-12IT:A TR

Micron Technology Inc.

IC FLASH 512GBIT 83MHZ 152TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,056

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F512G08CKCBBH7-6R:B TR

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 152TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,568

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

166MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08AUEBBK8-12:B TR

Micron Technology Inc.

IC FLASH 512GBIT 83MHZ TLGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,200

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08AUCBBK8-6:B TR

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ TLGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,088

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

166MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F512G08AUCBBH8-6:B TR

Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,752

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

166MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F32G08CBADBWP-12:D TR

Micron Technology Inc.

IC FLASH 32GBIT 83MHZ 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gb (4G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,736

FLASH

FLASH - NAND

32Gb (4G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F2T08CWCCBJ7-12:C TR

Micron Technology Inc.

IC FLASH 2TBIT 83MHZ 152LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存3,696

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F2T08CWCBBJ7-6R:B TR

Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 152LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,416

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F2T08CVCBBG6-6R:B TR

Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 272LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,480

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F2T08CTCBBJ7-6R:B TR

Micron Technology Inc.

IC FLASH 2TBIT 167MHZ 152LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tb (256G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,152

FLASH

FLASH - NAND

2Tb (256G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F256G08EFEBBWP:B TR

Micron Technology Inc.

IC FLASH 256GBIT 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,616

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT29F256G08EECBBJ4-6:B TR

Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 132VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存2,560

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-