頁 1539 - 記憶體 | 積體電路 (IC) | 黑森爾電子
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記憶體

記錄 62,144
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零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
W25Q32FVSSIG TR
Winbond Electronics

IC FLASH 32MBIT 104MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.209", 5.30mm Width)
庫存3,760
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
CY7C2565KV18-500BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 500MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 500MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
封裝: 165-LBGA
庫存3,264
SRAM
SRAM - Synchronous, QDR II+
72Mb (2M x 36)
Parallel
500MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
DS2045W-100#
Maxim Integrated

IC NVSRAM 1MBIT 100NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
封裝: 256-BGA
庫存7,632
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
100ns
100ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
DS2030AB-70#
Maxim Integrated

IC NVSRAM 256KBIT 70NS 256BGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (27x27)
封裝: 256-BGA
庫存7,488
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
256-BGA
256-BGA (27x27)
AT25020AN-10SU-2.7-T
Microchip Technology

IC EEPROM 2KBIT 20MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封裝: 8-SOIC (0.154", 3.90mm Width)
庫存6,368
EEPROM
EEPROM
2Kb (256 x 8)
SPI
20MHz
5ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT29C040A-15JI
Microchip Technology

IC FLASH 4MBIT 150NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封裝: 32-LCC (J-Lead)
庫存5,776
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
10ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
DS1250ABP-70
Maxim Integrated

IC NVSRAM 4MBIT 70NS 34PCM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 34-PowerCap? Module
  • Supplier Device Package: 34-PowerCap Module
封裝: 34-PowerCap? Module
庫存4,848
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
70ns
70ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Surface Mount
34-PowerCap? Module
34-PowerCap Module
hot AT29C040A-10TC
Microchip Technology

IC FLASH 4MBIT 100NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
封裝: 32-TFSOP (0.724", 18.40mm Width)
庫存78,660
FLASH
FLASH
4Mb (512K x 8)
Parallel
-
10ms
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
70T651S10BFGI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 10NS 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
封裝: 208-LFBGA
庫存3,280
SRAM
SRAM - Dual Port, Asynchronous
9Mb (256K x 36)
Parallel
-
10ns
10ns
2.4 V ~ 2.6 V
-40°C ~ 85°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
7007S25J
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
封裝: 68-LCC (J-Lead)
庫存3,888
SRAM
SRAM - Dual Port, Asynchronous
256Kb (32K x 8)
Parallel
-
25ns
25ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
S29GL01GT13DHNV23
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 130ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存7,072
FLASH
FLASH - NOR
1Gb (128M x 8)
Parallel
-
60ns
130ns
1.65 V ~ 3.6 V
-40°C ~ 125°C (TA)
-
-
-
IS65WV25616BLL-70TLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 70NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
封裝: 44-TSOP (0.400", 10.16mm Width)
庫存2,704
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
70ns
70ns
2.5 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot MT29F64G08CBAAAWP-Z:A
Micron Technology Inc.

IC FLASH 64GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存6,624
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
71V3558SA133BQGI8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
封裝: 165-TBGA
庫存3,200
SRAM
SRAM - Synchronous ZBT
4.5Mb (256K x 18)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
R1LV0108ESF-7SI#S0
Renesas Electronics America

IC SRAM 1MBIT 70NS 32TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP (8x20)
封裝: 32-TFSOP (0.724", 18.40mm Width)
庫存5,328
SRAM
SRAM
1Mb (128K x 8)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP (8x20)
71V2546S133PFG8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存5,008
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
S25FL256SDSMFB000
Cypress Semiconductor Corp

IC FLASH 256MBIT 80MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.295", 7.50mm Width)
庫存5,184
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O
80MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot 24LC014-I/P
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
封裝: 8-DIP (0.300", 7.62mm)
庫存8,772
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
93LC66AT-I/MNY
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
封裝: 8-WFDFN Exposed Pad
庫存4,112
EEPROM
EEPROM
4Kb (512 x 8)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot S25FL128P0XMFI011
Cypress Semiconductor Corp

IC FLASH 128MBIT 104MHZ 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
封裝: 16-SOIC (0.295", 7.50mm Width)
庫存15,048
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
hot MX29LV640EBTI-70G
Macronix

IC FLASH 64MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存39,336
FLASH
FLASH - NOR
64Mb (8M x 8)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
BR24G64FV-3GTE2
Rohm Semiconductor

IC EEPROM 64KBIT 400KHZ 8SSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-LSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-SSOPB
封裝: 8-LSSOP (0.173", 4.40mm Width)
庫存5,552
EEPROM
EEPROM
64Kb (8K x 8)
I2C
400kHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-LSSOP (0.173", 4.40mm Width)
8-SSOPB
CY7C1474BV33-200BGXC
Cypress Semiconductor Corp

IC SRAM 72MBIT 200MHZ 209FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (1M x 72)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 209-BGA
  • Supplier Device Package: 209-FBGA (14x22)
封裝: 209-BGA
庫存5,376
SRAM
SRAM - Synchronous
72Mb (1M x 72)
Parallel
200MHz
-
3ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
209-BGA
209-FBGA (14x22)
S34MS04G204TFI013
Cypress Semiconductor Corp

IC FLASH 4G PARALLEL 48TSOP I

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存6,528
FLASH
FLASH - NAND
4Gb (256M x 16)
Parallel
-
45ns
45ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
S29JL032J60TFI323
Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 60ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP (18.4x12)
封裝: 48-TFSOP (0.724", 18.40mm Width)
庫存2,256
FLASH
FLASH - NOR
32Mb (4M x 8, 2M x 16)
Parallel
-
60ns
60ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP (18.4x12)
W25Q64JWTBIQ
Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (8x6)
封裝: -
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FLASH
FLASH - NOR
64Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
3ms
6 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (8x6)
NDL86PFG-8KET
Insignis Technology Corporation

DDR3L 8GB X16 FBGA 9X13(X1.2) 16

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x13)
封裝: -
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DRAM
SDRAM - DDR3L
8Gbit
Parallel
800 MHz
-
-
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x13)
W957D8MFYA5I-TR
Winbond Electronics

IC DRAM 128MBIT HYPERBUS 24TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: HyperRAM
  • Memory Size: 128Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 36 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA, DDP (6x8)
封裝: -
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DRAM
HyperRAM
128Mbit
HyperBus
200 MHz
35ns
36 ns
3V ~ 3.6V
-40°C ~ 85°C (TC)
Surface Mount
24-TBGA
24-TFBGA, DDP (6x8)