頁 1538 - 記憶體 | 積體電路 (IC)

零件編號	製造商	描述	封裝	庫存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
W25Q80BLSSIG TR	Winbond Electronics	IC FLASH 8MBIT 80MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 80MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.209", 5.30mm Width)	庫存3,024	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	80MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
W25Q64JVDAIQ TR	Winbond Electronics	IC FLASH 64MBIT 104MHZ 8DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封裝: 8-DIP (0.300", 7.62mm)	庫存7,808	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	133MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-DIP (0.300", 7.62mm)	8-PDIP
IS25LD020-JNLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 2MBIT 100MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 100MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,832	FLASH	FLASH	2Mb (256K x 8)	SPI	100MHz	5ms	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IDT71V3557SA80BQG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8NS 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封裝: 165-TBGA	庫存6,384	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	-	-	8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS42S32400E-7BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 143MHZ 90FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封裝: 90-TFBGA	庫存5,904	DRAM	SDRAM	128Mb (4M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
MT48LC8M16LFTG-75:G	Micron Technology Inc.	IC SDRAM 128MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封裝: 54-TSOP (0.400", 10.16mm Width)	庫存2,096	DRAM	SDRAM - Mobile LPSDR	128Mb (8M x 16)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT28F004B5VP-8 T	Micron Technology Inc.	IC FLASH 4MBIT 80NS 40TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 80ns Access Time: 80ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 40-TSOP I	封裝: 40-TFSOP (0.724", 18.40mm Width)	庫存3,744	FLASH	FLASH - NOR	4Mb (512K x 8)	Parallel	-	80ns	80ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	40-TFSOP (0.724", 18.40mm Width)	40-TSOP I
AT24C04A-10TI-1.8	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封裝: 8-TSSOP (0.173", 4.40mm Width)	庫存7,712	EEPROM	EEPROM	4Kb (512 x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT29F1T08CUECBH8-12:C TR	Micron Technology Inc.	IC FLASH 1TBIT 83MHZ 152LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存7,632	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
CY7C1462KVE33-167AXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 167MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封裝: 100-LQFP	庫存6,704	SRAM	SRAM - Synchronous	36Mb (2M x 18)	Parallel	167MHz	-	3.4ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
71T75902S75BG	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 7.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封裝: 119-BGA	庫存7,040	SRAM	SRAM - Synchronous ZBT	18Mb (1M x 18)	Parallel	-	-	7.5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
71V67703S85PFG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 8.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 87MHz Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封裝: 100-LQFP	庫存6,352	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	87MHz	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
THGBMHG6C1LBAWL	Toshiba Semiconductor and Storage	IC FLASH 64GBIT 52MHZ 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: 52MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	封裝: 153-WFBGA	庫存5,088	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	52MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
CY14MB064Q2B-SXIT	Cypress Semiconductor Corp	IC NVSRAM 64KBIT 40MHZ 8SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存4,752	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	SPI	40MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
71V016SA12BFI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 12NS 48CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-CABGA (7x7)	封裝: 48-LFBGA	庫存2,944	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-LFBGA	48-CABGA (7x7)
IS61LV12816L-10TL-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封裝: 44-TSOP (0.400", 10.16mm Width)	庫存4,496	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	10ns	10ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AS7C3256A-20TIN	Alliance Memory, Inc.	IC SRAM 256KBIT 20NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP I	封裝: 28-TSSOP (0.465", 11.80mm Width)	庫存4,304	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
M95128-DFMN6TP	STMicroelectronics	IC EEPROM 128KBIT 2MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封裝: 8-SOIC (0.154", 3.90mm Width)	庫存3,024	EEPROM	EEPROM	128Kb (16K x 8)	SPI	20MHz	5ms	-	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
S29GL256S10DHIV13	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	封裝: 64-LBGA	庫存7,344	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	-	60ns	100ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (9x9)
IS62WV51216GBLL-45TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 8M PARALLEL 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封裝: 48-TFSOP (0.724", 18.40mm Width)	庫存3,200	SRAM	SRAM - Asynchronous	8Mb (512K x 16)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
S29GL128P11DGI017	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存5,712	FLASH	FLASH - NOR	128Mb (16M x 8)	Parallel	-	110ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
S25FL127SABBHID03	Cypress Semiconductor Corp	IC FLASH 128M SPI 108MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	封裝: 24-TBGA	庫存2,208	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
BR24A64F-WME2	Rohm Semiconductor	EEPROM SERIAL-I2C 64K-BIT 8K X 8 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封裝: 8-SOIC (0.173", 4.40mm Width)	庫存6,464	EEPROM	EEPROM	64Kb (8K x 8)	I²C	400kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
MT29F4G08ABAFAWP-ITES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	庫存4,912	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F2G16ABBGAH4-AIT-G-TR	Micron Technology Inc.	IC FLASH 2GBIT PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封裝: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	Parallel	-	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
SFEM256GB1ED1TO-A-8H-111-STD	Swissbit	IC FLASH 2TBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tbit Memory Interface: eMMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	封裝: -	庫存3	FLASH	FLASH - NAND	2Tbit	eMMC	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	153-TFBGA	153-BGA (11.5x13)
MT62F1G64D4CZ-023-WT-C	Micron Technology Inc.	LPDDR5 64GBIT 64 561/570 TFBGA 4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封裝: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY7C1324H-133AXCKJ	Cypress Semiconductor Corp	IC SRAM 2MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 6.5 ns Voltage - Supply: 3.15V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封裝: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	2Mbit	Parallel	133 MHz	-	6.5 ns	3.15V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)

W25Q80BLSSIG TR

Winbond Electronics

IC FLASH 8MBIT 80MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.209", 5.30mm Width)

庫存3,024

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

80MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

W25Q64JVDAIQ TR

Winbond Electronics

IC FLASH 64MBIT 104MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封裝: 8-DIP (0.300", 7.62mm)

庫存7,808

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

133MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-DIP (0.300", 7.62mm)

8-PDIP

IS25LD020-JNLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 2MBIT 100MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,832

FLASH

2Mb (256K x 8)

SPI

100MHz

5ms

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IDT71V3557SA80BQG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8NS 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封裝: 165-TBGA

庫存6,384

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

-

8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS42S32400E-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 90FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封裝: 90-TFBGA

庫存5,904

DRAM

SDRAM

128Mb (4M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

MT48LC8M16LFTG-75:G

Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封裝: 54-TSOP (0.400", 10.16mm Width)

庫存2,096

DRAM

SDRAM - Mobile LPSDR

128Mb (8M x 16)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT28F004B5VP-8 T

Micron Technology Inc.

IC FLASH 4MBIT 80NS 40TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 80ns
Access Time: 80ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP I

封裝: 40-TFSOP (0.724", 18.40mm Width)

庫存3,744

FLASH

FLASH - NOR

4Mb (512K x 8)

Parallel

-

80ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

40-TFSOP (0.724", 18.40mm Width)

40-TSOP I

AT24C04A-10TI-1.8

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封裝: 8-TSSOP (0.173", 4.40mm Width)

庫存7,712

EEPROM

4Kb (512 x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT29F1T08CUECBH8-12:C TR

Micron Technology Inc.

IC FLASH 1TBIT 83MHZ 152LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存7,632

FLASH

FLASH - NAND

1Tb (128G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

CY7C1462KVE33-167AXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 167MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封裝: 100-LQFP

庫存6,704

SRAM

SRAM - Synchronous

36Mb (2M x 18)

Parallel

167MHz

-

3.4ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

71T75902S75BG

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 7.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封裝: 119-BGA

庫存7,040

SRAM

SRAM - Synchronous ZBT

18Mb (1M x 18)

Parallel

-

7.5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

71V67703S85PFG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 87MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封裝: 100-LQFP

庫存6,352

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

87MHz

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

THGBMHG6C1LBAWL

Toshiba Semiconductor and Storage

IC FLASH 64GBIT 52MHZ 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

封裝: 153-WFBGA

庫存5,088

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

52MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

153-WFBGA

153-WFBGA (11.5x13)

CY14MB064Q2B-SXIT

Cypress Semiconductor Corp

IC NVSRAM 64KBIT 40MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存4,752

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

SPI

40MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

71V016SA12BFI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 48CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-CABGA (7x7)

封裝: 48-LFBGA

庫存2,944

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-LFBGA

48-CABGA (7x7)

IS61LV12816L-10TL-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封裝: 44-TSOP (0.400", 10.16mm Width)

庫存4,496

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

10ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AS7C3256A-20TIN

Alliance Memory, Inc.

IC SRAM 256KBIT 20NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP I

封裝: 28-TSSOP (0.465", 11.80mm Width)

庫存4,304

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

20ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP I

M95128-DFMN6TP

STMicroelectronics

IC EEPROM 128KBIT 2MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封裝: 8-SOIC (0.154", 3.90mm Width)

庫存3,024

EEPROM

128Kb (16K x 8)

SPI

20MHz

5ms

-

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

S29GL256S10DHIV13

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

封裝: 64-LBGA

庫存7,344

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

-

60ns

100ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (9x9)

IS62WV51216GBLL-45TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 8M PARALLEL 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封裝: 48-TFSOP (0.724", 18.40mm Width)

庫存3,200

SRAM

SRAM - Asynchronous

8Mb (512K x 16)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

S29GL128P11DGI017

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存5,712

FLASH

FLASH - NOR

128Mb (16M x 8)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

S25FL127SABBHID03

Cypress Semiconductor Corp

IC FLASH 128M SPI 108MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

封裝: 24-TBGA

庫存2,208

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

BR24A64F-WME2

Rohm Semiconductor

EEPROM SERIAL-I2C 64K-BIT 8K X 8

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封裝: 8-SOIC (0.173", 4.40mm Width)

庫存6,464

EEPROM

64Kb (8K x 8)

I²C

400kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

MT29F4G08ABAFAWP-ITES:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

庫存4,912

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F2G16ABBGAH4-AIT-G-TR

Micron Technology Inc.

IC FLASH 2GBIT PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封裝: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

Parallel

-

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

SFEM256GB1ED1TO-A-8H-111-STD

Swissbit

IC FLASH 2TBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Tbit
Memory Interface: eMMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

封裝: -

庫存3

FLASH

FLASH - NAND

2Tbit

eMMC

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

153-TFBGA

153-BGA (11.5x13)

MT62F1G64D4CZ-023-WT-C

Micron Technology Inc.

LPDDR5 64GBIT 64 561/570 TFBGA 4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封裝: -

Request a Quote

-

CY7C1324H-133AXCKJ

Cypress Semiconductor Corp

IC SRAM 2MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 6.5 ns
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封裝: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

2Mbit

Parallel

133 MHz

-

6.5 ns

3.15V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)