頁 1357 - 記憶體 | 積體電路 (IC) | 黑森爾電子
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記憶體

記錄 62,144
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零件編號
製造商
描述
封裝
庫存
數量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS42VM32200K-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封裝: 90-TFBGA
庫存5,216
DRAM
SDRAM - Mobile
64Mb (2M x 32)
Parallel
133MHz
-
6ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IDT71V3556S150BG8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
封裝: 119-BGA
庫存2,352
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
70V5388S200BCG
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 200MHZ 256BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Quad Port, Synchronous
  • Memory Size: 1.125Mb (64K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
封裝: 256-LBGA
庫存2,688
SRAM
SRAM - Quad Port, Synchronous
1.125Mb (64K x 18)
Parallel
200MHz
-
3ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
AT49BV002ANT-70PI
Microchip Technology

IC FLASH 2MBIT 70NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-DIP
封裝: 32-DIP (0.600", 15.24mm)
庫存6,480
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
50µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Through Hole
32-DIP (0.600", 15.24mm)
32-DIP
hot AT49F001N-70JC
Microchip Technology

IC FLASH 1MBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封裝: 32-LCC (J-Lead)
庫存10,740
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
709279S9PF8
IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 9NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封裝: 100-LQFP
庫存5,040
SRAM
SRAM - Dual Port, Synchronous
512Kb (32K x 16)
Parallel
-
-
9ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
7005L15PFG
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 15NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
封裝: 64-LQFP
庫存6,896
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
70V24S20J8
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (4K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
封裝: 84-LCC (J-Lead)
庫存4,096
SRAM
SRAM - Dual Port, Asynchronous
64Kb (4K x 16)
Parallel
-
20ns
20ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
IS43LR32160C-6BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封裝: 90-TFBGA
庫存3,568
DRAM
SDRAM - Mobile DDR
512Mb (16M x 32)
Parallel
166MHz
12ns
5.5ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
S34MS02G200TFV000
Cypress Semiconductor Corp

NAND

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,328
FLASH
FLASH - NAND
2Gb (256M x 8)
Parallel
-
45ns
45ns
1.7 V ~ 1.95 V
-40°C ~ 105°C (TA)
-
-
-
AT28HC64BF-12SU
Microchip Technology

IC EEPROM 64KBIT 120NS 28SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
封裝: 28-SOIC (0.295", 7.50mm Width)
庫存7,008
EEPROM
EEPROM
64Kb (8K x 8)
Parallel
-
10ms
120ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IS43LR32100D-6BL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 32MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 32Mb (1M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封裝: 90-TFBGA
庫存7,968
DRAM
SDRAM - Mobile DDR
32Mb (1M x 32)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
IS43DR16320D-3DBL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 333MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TWBGA (8x12.5)
封裝: 84-TFBGA
庫存4,176
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
84-TFBGA
84-TWBGA (8x12.5)
W987D2HBJX6I
Winbond Electronics

IC SDRAM 128MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封裝: 90-TFBGA
庫存3,520
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
166MHz
15ns
5.4ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-VFBGA (8x13)
M29W800DB45ZE6E
Micron Technology Inc.

IC FLASH 8MBIT 45NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8, 512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
封裝: 48-TFBGA
庫存5,856
FLASH
FLASH - NOR
8Mb (1M x 8, 512K x 16)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
hot BR24L04FVJ-WE2
Rohm Semiconductor

IC EEPROM 4KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-TSSOP-BJ
封裝: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
庫存26,520
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-TSSOP-BJ
AT25DN512C-MAHF-T
Adesto Technologies

IC FLASH 512KBIT 85MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 8µs, 1.75ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
封裝: 8-UFDFN Exposed Pad
庫存3,360
FLASH
FLASH
512Kb (64K x 8)
SPI
104MHz
8µs, 1.75ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
AT28C64B-15SU-T
Microchip Technology

150NS, SOIC, IND TEMP, GREEN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 28-SOIC
封裝: 28-SOIC (0.295", 7.50mm Width)
庫存20,928
EEPROM
EEPROM
64Kb (8K x 8)
Parallel
-
10ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
28-SOIC (0.295", 7.50mm Width)
28-SOIC
S29GL256P90TFCR23
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
封裝: 56-TFSOP (0.724", 18.40mm Width)
庫存21,852
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
90ns
90ns
3 V ~ 3.6 V
0°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
MT53D768M32D4BD-053 WT ES:C
Micron Technology Inc.

IC DRAM 24G 1866MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 24Gb (768M x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存2,608
DRAM
SDRAM - Mobile LPDDR4
24Gb (768M x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT29VZZZ7D8DQFSL-046 W.9J8 TR
Micron Technology Inc.

IC FLASH MEM 536G MCP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
庫存3,440
-
-
-
-
-
-
-
-
-
-
-
-
SFEM080GB2ED1TB-I-VG-11P-STD
Swissbit

IC FLASH 640GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 640Gbit
  • Memory Interface: eMMC
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
封裝: -
庫存30
FLASH
FLASH - NAND (TLC)
640Gbit
eMMC
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
71P72604S167BQG
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT PAR 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 167 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.4 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
封裝: -
Request a Quote
SRAM
SRAM - Synchronous, QDR II
18Mbit
Parallel
167 MHz
-
8.4 ns
1.7V ~ 1.9V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
IS61WV6416EEBLL-10KLI-TR
ISSI, Integrated Silicon Solution Inc

1Mb,High-Speed/Low Power,Async w

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 44-SOJ
封裝: -
Request a Quote
SRAM
SRAM - Asynchronous
1Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ
S-93A56BD0A-K8T2U3
ABLIC Inc.

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 2 MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-TMSOP
封裝: -
Request a Quote
EEPROM
EEPROM
2Kbit
Microwire
2 MHz
4ms
-
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
8-TMSOP
S99FL256SAGMFI003
Cypress Semiconductor Corp

INTEGRATED CIRCUIT

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封裝: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
BR25G320FVM-3GTR
Rohm Semiconductor

IC EEPROM 32KBIT SPI 20MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-MSOP
封裝: -
庫存8,400
EEPROM
EEPROM
32Kbit
SPI
20 MHz
5ms
-
1.6V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
8-MSOP
GD25LT256EYIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 256MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 70µs, 1.2ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
封裝: -
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FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI, DTR
200 MHz
70µs, 1.2ms
6 ns
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)