電晶體 - IGBT - 單

SKB10N60AATMA1

Infineon Technologies

IGBT 600V 20A 92W TO263-3

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 10A
• Power - Max: 92W
• Switching Energy: 320µJ
• Input Type: Standard
• Gate Charge: 52nC
• Td (on/off) @ 25°C: 28ns/178ns
• Test Condition: 400V, 10A, 25 Ohm, 15V
• Reverse Recovery Time (trr): 220ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG4BC20SD-S

Infineon Technologies

IGBT 600V 19A 60W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 19A
• Current - Collector Pulsed (Icm): 38A
• Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A
• Power - Max: 60W
• Switching Energy: 320µJ (on), 2.58mJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 62ns/690ns
• Test Condition: 480V, 10A, 50 Ohm, 15V
• Reverse Recovery Time (trr): 37ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRGBC20UD2

Infineon Technologies

IGBT W/DIODE 600V 13A TO-220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封裝: TO-220-3

RJH60A01RDPD-A0#J2

Renesas Electronics America

IGBT 600V 5A

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 10A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 5A
• Power - Max: 29.4W
• Switching Energy: 130µJ (on), 70µJ (off)
• Input Type: Standard
• Gate Charge: 11nC
• Td (on/off) @ 25°C: 30ns/40ns
• Test Condition: 300V, 5A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IXSH24N60BD1

IXYS

IGBT 600V 48A 150W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
• Power - Max: 150W
• Switching Energy: 1.3mJ (off)
• Input Type: Standard
• Gate Charge: 41nC
• Td (on/off) @ 25°C: 50ns/150ns
• Test Condition: 480V, 24A, 33 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXSH)

封裝: TO-247-3

IXST30N60CD1

IXYS

IGBT 600V 55A 200W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 110A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 200W
• Switching Energy: 700µJ (off)
• Input Type: Standard
• Gate Charge: 100nC
• Td (on/off) @ 25°C: 30ns/90ns
• Test Condition: 480V, 30A, 4.7 Ohm, 15V
• Reverse Recovery Time (trr): 50ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

封裝: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

SGM2N60UFTF

Fairchild/ON Semiconductor

IGBT 600V 2.4A 2.1W SOT-223

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 2.4A
• Current - Collector Pulsed (Icm): 10A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1.2A
• Power - Max: 2.1W
• Switching Energy: 30µJ (on), 13µJ (off)
• Input Type: Standard
• Gate Charge: 9nC
• Td (on/off) @ 25°C: 15ns/80ns
• Test Condition: 300V, 1.2A, 200 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223-4

封裝: TO-261-4, TO-261AA

IGB30N60TATMA1

Infineon Technologies

IGBT 600V 60A 187W TO263-3-2

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
• Power - Max: 187W
• Switching Energy: 1.46mJ
• Input Type: Standard
• Gate Charge: 167nC
• Td (on/off) @ 25°C: 23ns/254ns
• Test Condition: 400V, 30A, 10.6 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-3-2

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IKD06N60RFAATMA1

Infineon Technologies

IGBT 600V 12A 100W PG-TO252-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 12A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
• Power - Max: 100W
• Switching Energy: 90µJ (on), 90µJ (off)
• Input Type: Standard
• Gate Charge: 48nC
• Td (on/off) @ 25°C: 8ns/105ns
• Test Condition: 400V, 6A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 48ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-3

封裝: TO-252-3, DPak (2 Leads + Tab), SC-63

IXGL75N250

IXYS

IGBT 2500V 110A 430W I5-PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 2500V
• Current - Collector (Ic) (Max): 110A
• Current - Collector Pulsed (Icm): 580A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 75A
• Power - Max: 430W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 410nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUSi5-Pak?
• Supplier Device Package: ISOPLUSi5-Pak?

封裝: ISOPLUSi5-Pak?

RJH65D27BDPQ-A0#T2

Renesas Electronics America

IGBT TRENCH 650V 100A TO247A

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 100A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
• Power - Max: 375W
• Switching Energy: 1mJ (on), 1.5mJ (off)
• Input Type: Standard
• Gate Charge: 175nC
• Td (on/off) @ 25°C: 20ns/165ns
• Test Condition: 400V, 50A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 80ns
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247A

封裝: TO-247-3

SGH20N60RUFDTU

Fairchild/ON Semiconductor

IGBT 600V 32A 195W TO3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 32A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
• Power - Max: 195W
• Switching Energy: 524µJ (on), 473µJ (off)
• Input Type: Standard
• Gate Charge: 55nC
• Td (on/off) @ 25°C: 30ns/48ns
• Test Condition: 300V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 95ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

封裝: TO-3P-3, SC-65-3

ISL9V2540S3ST

Fairchild/ON Semiconductor

IGBT 430V 15.5A 166.7W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 15.5A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 4V, 6A
• Power - Max: 166.7W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 15.1nC
• Td (on/off) @ 25°C: -/3.64µs
• Test Condition: 300V, 1 kOhm, 5V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

封裝: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRG7PH46UDPBF

Infineon Technologies

IGBT 1200V 40A 390W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
• Power - Max: 390W
• Switching Energy: 2.61mJ (on), 1.85mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 45ns/410ns
• Test Condition: 600V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

封裝: TO-247-3

IXBF12N300

IXYS

IGBT 3000V 26A 125W ISOPLUSI4

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 3000V
• Current - Collector (Ic) (Max): 26A
• Current - Collector Pulsed (Icm): 98A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
• Power - Max: 125W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 62nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): 1.4µs
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5 (3 leads)
• Supplier Device Package: ISOPLUS i4-PAC?

封裝: i4-Pac?-5 (3 leads)

FGH75T65UPD_F085

Fairchild/ON Semiconductor

IGBT 650V 150A 375W TO-247AB

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
• Power - Max: 375W
• Switching Energy: 2.85mJ (on), 1.2mJ (off)
• Input Type: Standard
• Gate Charge: 578nC
• Td (on/off) @ 25°C: 32ns/166ns
• Test Condition: 400V, 75A, 3 Ohm, 15V
• Reverse Recovery Time (trr): 85ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

封裝: TO-247-3

STGW45NC60WD

STMicroelectronics

IGBT 600V 90A 285W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 90A
• Current - Collector Pulsed (Icm): 230A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
• Power - Max: 285W
• Switching Energy: 302µJ (on), 349µJ (off)
• Input Type: Standard
• Gate Charge: 126nC
• Td (on/off) @ 25°C: 33ns/168ns
• Test Condition: 390V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 45ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 Long Leads

封裝: TO-247-3

FGA30T65SHD

Fairchild/ON Semiconductor

IGBT 650V 60A 238W TO-3PN

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 90A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
• Power - Max: 238W
• Switching Energy: 598µJ (on), 167µJ (off)
• Input Type: Standard
• Gate Charge: 54.7nC
• Td (on/off) @ 25°C: 14.4ns/52.8ns
• Test Condition: 400V, 30A, 6 Ohm, 15V
• Reverse Recovery Time (trr): 31.8ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3PN

封裝: TO-3P-3, SC-65-3

STGW30M65DF2

STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 258W
• Switching Energy: 300µJ (on), 960µJ (off)
• Input Type: Standard
• Gate Charge: 80nC
• Td (on/off) @ 25°C: 31.6ns/115ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 140ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

封裝: TO-247-3

STGF30H60DF

STMicroelectronics

IGBT 600V 60A 37W TO220FP

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
• Power - Max: 37W
• Switching Energy: 350µJ (on), 400µJ (off)
• Input Type: Standard
• Gate Charge: 105nC
• Td (on/off) @ 25°C: 50ns/160ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 110ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FP

封裝: TO-220-3 Full Pack

RGS80TSX2HRC11

Rohm Semiconductor

IGBT TRENCH FLD 1200V 80A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 555 W
• Switching Energy: 3mJ (on), 3.1mJ (off)
• Input Type: Standard
• Gate Charge: 104 nC
• Td (on/off) @ 25°C: 49ns/199ns
• Test Condition: 600V, 40A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -

IXYK110N120C4

IXYS

IGBT 1200V 110A GEN4 XPT TO264

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 310 A
• Current - Collector Pulsed (Icm): 740 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
• Power - Max: 1360 W
• Switching Energy: 3.6mJ (on), 1.9mJ (off)
• Input Type: Standard
• Gate Charge: 330 nC
• Td (on/off) @ 25°C: 40ns/320ns
• Test Condition: 600V, 50A, 2Ohm, 15V
• Reverse Recovery Time (trr): 48 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-264AA
• Supplier Device Package: PLUS264™

封裝: -

LGB15N41ATI

Littelfuse Inc.

IGBT 440V 15A 107W D2PAK3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

Request a Quote

RGW60TS65EHRC11

Rohm Semiconductor

IGBT TRNCH FIELD 650V 64A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 64 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
• Power - Max: 178 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 84 nC
• Td (on/off) @ 25°C: 37ns/101ns
• Test Condition: 400V, 15A, 10Ohm, 15V
• Reverse Recovery Time (trr): 146 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

封裝: -

IXXH30N60C3

IXYS

DISC IGBT XPT-GENX3 TO-247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 110 A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 24A
• Power - Max: 270 W
• Switching Energy: 500µJ (on), 270µJ (off)
• Input Type: Standard
• Gate Charge: 37 nC
• Td (on/off) @ 25°C: 23ns/77ns
• Test Condition: 400V, 24A, 10Ohm, 15V
• Reverse Recovery Time (trr): 33 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

封裝: -

Request a Quote

STGB30H65FB

STMicroelectronics

IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 60 A
• Current - Collector Pulsed (Icm): 120 A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Power - Max: 260 W
• Switching Energy: 151µJ (on), 293µJ (off)
• Input Type: Standard
• Gate Charge: 149 nC
• Td (on/off) @ 25°C: 37ns/146ns
• Test Condition: 400V, 30A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263 (D2PAK)

封裝: -

Request a Quote

RJP30H1DPP-M9-T2

Renesas Electronics Corporation

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封裝: -

Request a Quote

IXYH100N65A3

IXYS

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 240 A
• Current - Collector Pulsed (Icm): 480 A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
• Power - Max: 470 W
• Switching Energy: 3.15mJ (on), 2.2mJ (off)
• Input Type: Standard
• Gate Charge: 178 nC
• Td (on/off) @ 25°C: 24ns/174ns
• Test Condition: 400V, 50A, 2Ohm, 15V
• Reverse Recovery Time (trr): 64 ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 (IXTH)

封裝: -

Request a Quote